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Charged Higgs in 3-3-1 Model Through $e^-e^+$ Collisions
Authors:
J. E. Cieza Montalvo,
K. I. Cuba Quispe,
R. J. Gil Ramírez,
C. A. Morgan Cruz,
J. F. Rabanal Muñoz,
G. H. Ramírez Ulloa,
A. I. Rivasplata Mendoza,
M. D. Tonasse
Abstract:
In this work we present an analysis of production and signature of charged Higgs bosons $H_2^{\pm}$ in the version of the 3-3-1 model containing heavy leptons at the CLIC (Cern Linear Collider). The production rate is found to be significant for the direct production of $e^{-} e^{+} \rightarrow H_{2}^{+} H_{2}^{-}$. We also studied the possibility to identify it using their respective branching ra…
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In this work we present an analysis of production and signature of charged Higgs bosons $H_2^{\pm}$ in the version of the 3-3-1 model containing heavy leptons at the CLIC (Cern Linear Collider). The production rate is found to be significant for the direct production of $e^{-} e^{+} \rightarrow H_{2}^{+} H_{2}^{-}$. We also studied the possibility to identify it using their respective branching ratios.
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Submitted 21 July, 2022;
originally announced July 2022.
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Stress-tailoring magnetic anisotropy of V$_2$O$_3$/Ni bilayers
Authors:
Christian T. Wolowiec,
Juan Gabriel Ramírez,
Min-Han Lee,
Nicolas M. Vargas,
Ali C. Basaran,
Pavel Salev,
Ivan K. Schuller
Abstract:
We report on a temperature-driven reversible change of the in-plane magnetic anisotropy of V$_2$O$_3$/Ni bilayers. This is caused by the rhombohedral to monoclinic structural phase transition of V$_2$O$_3$ at $T_C$ = 160 K. The in-plane magnetic anisotropy is uniaxial above $T_C$, but as the bilayer is cooled through the structural phase transition, a secondary magnetic easy axis emerges. Ferromag…
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We report on a temperature-driven reversible change of the in-plane magnetic anisotropy of V$_2$O$_3$/Ni bilayers. This is caused by the rhombohedral to monoclinic structural phase transition of V$_2$O$_3$ at $T_C$ = 160 K. The in-plane magnetic anisotropy is uniaxial above $T_C$, but as the bilayer is cooled through the structural phase transition, a secondary magnetic easy axis emerges. Ferromagnetic resonance measurements show that this change in magnetic anisotropy is reversible with temperature. We identify two structural properties of the V$_2$O$_3$/Ni bilayers affecting the in-plane magnetic anisotropy: (1) a growth-induced uniaxial magnetic anisotropy associated with step-like terraces in the bilayer microstructure and (2) a low-temperature strain-induced biaxial anisotropy associated with the V$_2$O$_3$ structural phase transition. Magnetoresistance measurements corroborate the change in magnetic anisotropy across the structural transition and suggest that the negative magnetostriction of Ni leads to the emergence of a strain-induced easy-axis. This shows that a temperature-dependent structural transition in V$_2$O$_3$ may be used to tune the magnetic anisotropy in an adjacent ferromagnetic thin film.
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Submitted 23 December, 2021;
originally announced December 2021.
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Challenges in materials and devices for Resistive-Switching-based Neuromorphic Computing
Authors:
Javier del Valle,
Juan Gabriel Ramírez,
Marcelo J. Rozenberg,
Ivan K. Schuller
Abstract:
This tutorial describes challenges and possible avenues for the implementation of the components of a solid-state system, which emulates a biological brain. The tutorial is devoted mostly to a charge-based (i.e. electric controlled) implementation using transition metal oxides materials, which exhibit unique properties that emulate key functionalities needed for this application. In the Introducti…
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This tutorial describes challenges and possible avenues for the implementation of the components of a solid-state system, which emulates a biological brain. The tutorial is devoted mostly to a charge-based (i.e. electric controlled) implementation using transition metal oxides materials, which exhibit unique properties that emulate key functionalities needed for this application. In the Introduction, we compare the main differences between a conventional computational machine, based on the Turing-von Neumann paradigm, to a Neuromorphic machine, which tries to emulate important functionalities of a biological brain. We also describe the main electrical properties of biological systems, which would be useful to implement in a charge-based system. In Chapter II, we describe the main components of a possible solid-state implementation. In Chapter III, we describe a variety of Resistive Switching phenomena, which may serve as the functional basis for the implementation of key devices for Neuromorphic computing. In Chapter IV we describe why transition metal oxides, are promising materials for future Neuromorphic machines. Theoretical models describing different resistive switching mechanisms are discussed in Chapter V while existing implementations are described in Chapter VI. Chapter VII presents applications to practical problems. We list in Chapter VIII important basic research challenges and open issues. We discuss issues related to specific implementations, novel materials, devices and phenomena. The development of reliable, fault tolerant, energy efficient devices, their scaling and integration into a Neuromorphic computer may bring us closer to the development of a machine that rivals the brain.
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Submitted 31 October, 2018;
originally announced December 2018.
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Growth-Induced In-Plane Uniaxial Anisotropy in V$_{2}$O$_{3}$/Ni Films
Authors:
Dustin A. Gilbert,
Juan Gabriel Ramírez,
Thomas Saerbeck,
Juan Trastoy,
Ivan K. Schuller,
Kai Liu,
Jose de la Venta
Abstract:
We report on a strain-induced and temperature dependent uniaxial anisotropy in V$_{2}$O$_{3}$/Ni hybrid thin films, manifested through the interfacial strain and sample microstructure, and its consequences on the angular dependent magnetization reversal. X-ray diffraction and reciprocal space maps identify the in-plane crystalline axes of the V$_{2}$O$_{3}$; atomic force and scanning electron micr…
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We report on a strain-induced and temperature dependent uniaxial anisotropy in V$_{2}$O$_{3}$/Ni hybrid thin films, manifested through the interfacial strain and sample microstructure, and its consequences on the angular dependent magnetization reversal. X-ray diffraction and reciprocal space maps identify the in-plane crystalline axes of the V$_{2}$O$_{3}$; atomic force and scanning electron microscopy reveal oriented rips in the film microstructure. Quasi-static magnetometry and dynamic ferromagnetic resonance measurements identify a uniaxial magnetic easy axis along the rips. Comparison with films grown on sapphire without rips shows a combined contribution from strain and microstructure in the V$_{2}$O$_{3}$/Ni films. Magnetization reversal characteristics captured by angular-dependent first order reversal curve measurements indicate a strong domain wall pinning along the direction orthogonal to the rips, inducing an angular-dependent change in the reversal mechanism. The resultant anisotropy is tunable with temperature and is most pronounced at room temperature, which is beneficial for potential device applications.
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Submitted 18 September, 2017;
originally announced September 2017.
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Non-equilibrium phase precursors to the insulator-metal transition in V2O3
Authors:
Andrej Singer,
Juan Gabriel Ramirez,
Ilya Valmianski,
Devin Cela,
Nelson Hua,
Roopali Kukreja,
James Wingert,
Olesya Kovalchuk,
James M. Glownia,
Marcin Sikiroski,
Matthieu Chollet,
Martin Holt,
Ivan K. Schuller,
Oleg G. Shpyrko
Abstract:
The discovery of novel phases of matter is at the core of modern physics. In quantum materials, subtle variations in atomic-scale interactions can induce dramatic changes in macroscopic properties and drive phase transitions. Despite their importance, the mesoscale processes underpinning phase transitions often remain elusive because of the vast differences in timescales between atomic and electro…
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The discovery of novel phases of matter is at the core of modern physics. In quantum materials, subtle variations in atomic-scale interactions can induce dramatic changes in macroscopic properties and drive phase transitions. Despite their importance, the mesoscale processes underpinning phase transitions often remain elusive because of the vast differences in timescales between atomic and electronic changes and thermodynamic transformations. Here, we photoinduce and directly observe with x-ray scattering an ultrafast enhancement of the structural long-range order in the archetypal Mott system V2O3. Despite the ultrafast change in crystal symmetry, the change of unit cell volume occurs an order of magnitude slower and coincides with the insulator-to-metal transition. The decoupling between the two structural responses in the time domain highlights the existence of a transient photoinduced precursor phase, which is distinct from the two structural phases present in equilibrium. X-ray nanoscopy reveals that acoustic phonons trapped in nanoscale blocks govern the dynamics of the ultrafast transition into the precursor phase, while nucleation and growth of metallic domains dictate the duration of the slower transition into the metallic phase. The enhancement of the long-range order before completion of the electronic transition demonstrates the critical role the non-equilibrium structural phases play during electronic phase transitions in correlated electrons systems.
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Submitted 13 September, 2017;
originally announced September 2017.
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Ultrafast Electron-Lattice Coupling Dynamics in VO2 and V2O3 Thin Films
Authors:
Elsa Abreu,
Stephanie N. Gilbert Corder,
Sun ** Yun,
Siming Wang,
Juan Gabriel Ramirez,
Kevin West,
**gdi Zhang,
Salinporn Kittiwatanakul,
Ivan K. Schuller,
Jiwei Lu,
Stuart A. Wolf,
Hyun-Tak Kim,
Mengkun Liu,
Richard D. Averitt
Abstract:
Ultrafast optical pump - optical probe and optical pump - terahertz probe spectroscopy were performed on vanadium dioxide (VO2) and vanadium sesquioxide (V2O3) thin films over a wide temperature range. A comparison of the experimental data from these two different techniques and two different vanadium oxides, in particular a comparison of the electronic oscillations generated by the photoinduced l…
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Ultrafast optical pump - optical probe and optical pump - terahertz probe spectroscopy were performed on vanadium dioxide (VO2) and vanadium sesquioxide (V2O3) thin films over a wide temperature range. A comparison of the experimental data from these two different techniques and two different vanadium oxides, in particular a comparison of the electronic oscillations generated by the photoinduced longitudinal acoustic modulation, reveals the strong electron-phonon coupling that exists in the metallic state of both materials. The low energy Drude response of V2O3 appears more susceptible than VO2 to ultrafast strain control. Additionally, our results provide a measurement of the temperature dependence of the sound velocity in both systems, revealing a four- to fivefold increase in VO2 and a three- to fivefold increase in V2O3 across the phase transition. Our data also confirm observations of strong dam** and phonon anharmonicity in the metallic phase of VO2, and suggest that a similar phenomenon might be at play in the metallic phase of V2O3. More generally, our simple table-top approach provides relevant and detailed information about dynamical lattice properties of vanadium oxides, opening the way to similar studies in other complex materials.
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Submitted 19 January, 2017;
originally announced January 2017.
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Low vibration high numerical aperture automated variable temperature Raman microscope
Authors:
Yao Tian,
Anjan A. Reijnders,
Gavin B. Osterhoudt,
Ilya Valmianski,
J. G. Ramirez,
Christian Urban,
Ruidan Zhong,
John Schneeloch,
Genda Gu,
Isaac Henslee,
Kenneth S. Burch
Abstract:
Raman micro-spectroscopy is well suited for studying a variety of properties and has been applied to wide- ranging areas. Combined with tuneable temperature, Raman spectra can offer even more insights into the properties of materials. However, previous designs of variable temperature Raman microscopes have made it extremely challenging to measure samples with low signal levels due to thermal and p…
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Raman micro-spectroscopy is well suited for studying a variety of properties and has been applied to wide- ranging areas. Combined with tuneable temperature, Raman spectra can offer even more insights into the properties of materials. However, previous designs of variable temperature Raman microscopes have made it extremely challenging to measure samples with low signal levels due to thermal and positional instability as well as low collection efficiencies. Thus, contemporary Raman microscope has found limited applicability to probing the subtle physics involved in phase transitions and hysteresis. This paper describes a new design of a closed-cycle, Raman microscope with full polarization rotation. High collection efficiency, thermal and mechanical stability are ensured by both deliberate optical, cryogenic, and mechanical design. Measurements on two samples, Bi2Se3 and V2O3, which are known as challenging due to low thermal conductivities, low signal levels and/or hysteretic effects, are measured with previously undemonstrated temperature resolution.
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Submitted 8 April, 2016;
originally announced April 2016.
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Search for New Superconductors: An Electro-Magnetic Phase Transition in an Iron Meteorite Inclusion at 117 K
Authors:
Stefan Guénon,
Juan Gabriel Ramírez,
Ali C. Basaran,
Jamie Wampler,
Mark Thiemens,
Ivan K. Schuller
Abstract:
The discovery of superconductivity in pnictides and iron chalcogenides inspires the search for new iron based superconducting phases. Iron-rich meteorites present a unique opportunity for this search, because they contain a broad range of compounds produced under extreme growth conditions. We investigated a natural iron sulfide based materials (Troilite) inclusion with its associated minerals in t…
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The discovery of superconductivity in pnictides and iron chalcogenides inspires the search for new iron based superconducting phases. Iron-rich meteorites present a unique opportunity for this search, because they contain a broad range of compounds produced under extreme growth conditions. We investigated a natural iron sulfide based materials (Troilite) inclusion with its associated minerals in the iron meteorite Tlacotepec. Tlacotepec formed in an asteroidal core under high pressure and at high temperature over millions of years, while insoluble sulfur rich materials segregated into inclusions during cooling along with included minerals. The search for superconductivity in these heterogeneous materials requires a technique capable of detecting minute amounts of a superconducting phase embedded in a non-superconducting matrix. We used Magnetic Field Modulated Microwave Spectroscopy (MFMMS), a very sensitive, selective, and non-destructive technique, to search for superconductivity in heterogeneous systems. Here, we report the observation of an electro-magnetic phase transition at 117 K that causes a MFMMS-response typical of a superconductor. A pronounced and reproducible peak together with isothermal magnetic field sweeps prove the appearance of a new electromagnetic phase below 117 K. This is very similar to the characteristic response due to flux trap** in a granular superconductor with a short coherence length. Although the compound responsible for the peak in the MFMMS-spectra was not identified, it is possibly an iron sulfide based phase, or another material heterogeneously distributed over the inclusion.
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Submitted 16 September, 2015; v1 submitted 15 September, 2015;
originally announced September 2015.
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Neutral 3-3-1 Higgs Boson Through $e^{+} e^{-} Collisions
Authors:
J. E. Cieza Montalvo,
C. A. Morgan Cruz,
R. J. Gil Ramirez,
G. H. Ramirez Ulloa,
A. I. Rivasplata Mendoza,
M. D. Tonasse
Abstract:
In this work we present an analysis of production and signature of neutral Higgs bosons $H_2^0$ in the version of the 3-3-1 model containing heavy leptons at the ILC (International Linear Collider) and CLIC (Cern Linear Collider). The production rate is found to be significant for the direct production of $e^{+} e^{-} \rightarrow H_{2}^{0} Z$. We also studied the possibility to identify it using t…
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In this work we present an analysis of production and signature of neutral Higgs bosons $H_2^0$ in the version of the 3-3-1 model containing heavy leptons at the ILC (International Linear Collider) and CLIC (Cern Linear Collider). The production rate is found to be significant for the direct production of $e^{+} e^{-} \rightarrow H_{2}^{0} Z$. We also studied the possibility to identify it using their respective branching ratios.
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Submitted 27 August, 2014; v1 submitted 25 August, 2014;
originally announced August 2014.
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Search for the Higgs Boson $H_2^0$ at LHC in 3-3-1 Model
Authors:
J. E. Cieza Montalvo,
R. J. Gil Ramírez,
G. H. Ramírez Ulloa,
A. I. Rivasplata Mendoza
Abstract:
We present an analysis of production and signature of neutral Higgs boson ($H_{2}^{0}$) on the version of the 3-3-1 model containing heavy leptons at the Large Hadron Collider. We studied the possibility to identify it using the respective branching ratios. Cross section are given for the collider energy, $\sqrt{s} =$ 14 TeV. Event rates and significances are discussed for two possible values of i…
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We present an analysis of production and signature of neutral Higgs boson ($H_{2}^{0}$) on the version of the 3-3-1 model containing heavy leptons at the Large Hadron Collider. We studied the possibility to identify it using the respective branching ratios. Cross section are given for the collider energy, $\sqrt{s} =$ 14 TeV. Event rates and significances are discussed for two possible values of integrated luminosity, 300 fb$^{-1}$ and 3000 fb$^{-1}$.
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Submitted 26 November, 2013; v1 submitted 4 November, 2013;
originally announced November 2013.
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Electrical Breakdown in a V2O3 device at the Insulator to Metal Transition
Authors:
S. Guénon,
S. Scharinger,
Siming Wang,
J. G Ramírez,
D. Koelle,
R. Kleiner,
Ivan K. Schuller
Abstract:
We have measured the electrical properties of a V2O3 thin film micro bridge at the insulator metal transition (IMT). Discontinuous jumps to lower voltages in the current voltage characteristic (IV) followed by an approximately constant voltage progression for high currents indicate an electrical breakdown of the device. In addition, the IV curve shows hysteresis and a training effect, i.e. the sub…
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We have measured the electrical properties of a V2O3 thin film micro bridge at the insulator metal transition (IMT). Discontinuous jumps to lower voltages in the current voltage characteristic (IV) followed by an approximately constant voltage progression for high currents indicate an electrical breakdown of the device. In addition, the IV curve shows hysteresis and a training effect, i.e. the subsequent IV loops are different from the first IV loop after thermal cycling. Low temperature scanning electron microscopy (LTSEM) reveals that the electrical breakdown over the whole device is caused by the formation of electro-thermal domains (ETDs), i.e. the current and temperature redistribution in the device. On the contrary, at the nanoscale, the electrical breakdown causes the IMT of individual domains. In a numerical model we considered these domains as a network of resistors and we were able to reproduce the electro-thermal breakdown as well as the hysteresis and the training effect in the IVs.
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Submitted 2 November, 2012; v1 submitted 25 October, 2012;
originally announced October 2012.
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Neutral 3-3-1 Higgs Bosons at LHC
Authors:
J. E. Cieza Montalvo,
R. J. Gil Ramírez,
G. H. Ramírez Ulloa,
A. I. Rivasplata Mendoza
Abstract:
We present an analysis of production and signature of neutral Higgs bosons on the version of the 3-3-1 model containing heavy leptons at the Large Hadron Collider (LHC). The production rate is found to be significant with a clear signature ($\sqrt{s}=14$) TeV, showing that these scalars can be detected in this accelerator. We also studied the possibility to identify them using their respective bra…
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We present an analysis of production and signature of neutral Higgs bosons on the version of the 3-3-1 model containing heavy leptons at the Large Hadron Collider (LHC). The production rate is found to be significant with a clear signature ($\sqrt{s}=14$) TeV, showing that these scalars can be detected in this accelerator. We also studied the possibility to identify them using their respective branching ratios. Cross section are given for two collider energies, $\sqrt{s} =$ 8 TeV and 14 TeV. Event rates and significances are discussed for two possible values of integrated luminosity, 10 fb$^{-1}$ and 300 fb$^{-1}$.
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Submitted 15 May, 2013; v1 submitted 17 May, 2012;
originally announced May 2012.
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Multiple Avalanches Across the Metal-Insulator Transition of Vanadium Oxide Nano-scaled Junctions
Authors:
Amos Sharoni,
Juan Gabriel Ramírez,
Ivan K. Schuller
Abstract:
The metal insulator transition of nano-scaled $VO_2$ devices is drastically different from the smooth transport curves generally reported. The temperature driven transition occurs through a series of resistance jumps ranging over 2 decades in amplitude, indicating that the transition is caused by avalanches. We find a power law distribution of the jump amplitudes, demonstrating an inherent prope…
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The metal insulator transition of nano-scaled $VO_2$ devices is drastically different from the smooth transport curves generally reported. The temperature driven transition occurs through a series of resistance jumps ranging over 2 decades in amplitude, indicating that the transition is caused by avalanches. We find a power law distribution of the jump amplitudes, demonstrating an inherent property of the $VO_2$ films. We report a surprising relation between jump amplitude and device size. A percolation model captures the general transport behavior, but cannot account for the statistical behavior.
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Submitted 19 March, 2008; v1 submitted 9 March, 2008;
originally announced March 2008.
