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Showing 1–2 of 2 results for author: Ramirez, E B

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  1. arXiv:1812.09643  [pdf, other

    cond-mat.mes-hall

    Few-electrode design for silicon MOS quantum dots

    Authors: Eduardo B. Ramirez, Francois Sfigakis, Sukanya Kudva, Jonathan Baugh

    Abstract: Silicon metal-oxide-semiconductor (MOS) spin qubits have become a promising platform for quantum information processing, with recent demonstrations of high-fidelity single and two-qubit gates. To move beyond a few qubits, however, more scalable designs that reduce the fabrication complexity and electrode density are needed. Here, we introduce a two-metal-layer MOS quantum dot device in which tunne… ▽ More

    Submitted 19 July, 2019; v1 submitted 22 December, 2018; originally announced December 2018.

    Comments: main text + references is 6 pages and contains 5 figures; supplementary material is appended

    Journal ref: Semiconductor Science and Technology 35, 015002 (2019)

  2. arXiv:1807.09941  [pdf, other

    quant-ph physics.app-ph

    Network architecture for a topological quantum computer in silicon

    Authors: Brandon Buonacorsi, Zhenyu Cai, Eduardo B. Ramirez, Kyle S. Willick, Sean M. Walker, Jiahao Li, Benjamin D. Shaw, Xiaosi Xu, Simon C. Benjamin, Jonathan Baugh

    Abstract: A design for a large-scale surface code quantum processor based on a node/network approach is introduced for semiconductor quantum dot spin qubits. The minimal node contains only 7 quantum dots, and nodes are separated on the micron scale, creating useful space for wiring interconnects and integration of conventional transistor circuits. Entanglement is distributed between neighbouring nodes by lo… ▽ More

    Submitted 26 November, 2018; v1 submitted 25 July, 2018; originally announced July 2018.

    Comments: 35 pages, 16 figures

    Journal ref: Quantum Science and Technology, Volume 4, Number 2, 025003 (2019)