Development FD-SOI MOSFET amplifiers for integrated read-out circuit of superconducting-tunnel-junction single-photon-detectors
Authors:
Kenji Kiuchi,
Shinhong Kim,
Yuji Takeuchi,
Kenichi Takemasa,
Kazuki Nagata,
Kota Kasahara,
Koya Moriuchi,
Ren Senzaki,
Shunsuke Yagi,
Hirokazu Ikeda,
Shuji Matsuura,
Takehiko Wada,
Hirokazu Ishino,
Atsuko Kibayashi,
Hiromi Sato,
Satoru Mima,
Takuo Yoshida,
Ryuta Hirose,
Yukihiro Kato,
Masasi Hazumi,
Yasuo Arai,
Ikuo Kurachi,
Erik Ramgerg,
Mark Kozlovsky,
Paul Rubinov
, et al. (6 additional authors not shown)
Abstract:
We proposed a new high resolution single photon infrared spectrometer for search for radiative decay of cosmic neutrino background(C$ν$B). The superconducting-tunnel-junctions(STJs) are used as a single photoncounting device. Each STJ consists of Nb/Al/Al${}_{\mathrm{x}}$O${}_{\mathrm{y}}$/Al/Nb layers and their thicknesses are optimized for the operation temperature at 370 mK cooled by a…
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We proposed a new high resolution single photon infrared spectrometer for search for radiative decay of cosmic neutrino background(C$ν$B). The superconducting-tunnel-junctions(STJs) are used as a single photoncounting device. Each STJ consists of Nb/Al/Al${}_{\mathrm{x}}$O${}_{\mathrm{y}}$/Al/Nb layers and their thicknesses are optimized for the operation temperature at 370 mK cooled by a ${}^{3}$He sorption refrigerator. Our STJs achieved the leak current 250 pA and the measured data implies that a smaller area STJ fulfills our requirement. FD-SOI MOSFETs are employed to amplify the STJ signal current in order to increase signal-to-noise ratio(S/N). FD-SOI MOSFETs can be operated at cryogenic temperature of 370 mK, which reduces the noise of the signal amplification system. FD-SOI MOSFET characteristics are measured at cryogenic temperature. The Id-Vgs curve shows a sharper turn on with a higher threshold voltage and the Id-Vds curve shows a non linear shape in linear region at cryogenic temperature. Taking into account these effects, FD-SOI MOSFETs are available for read-out circuit of STJ detectors. The bias voltage for STJ detectors are 0.4 mV and it must be well stabilized to deliver high performance. We proposed an FD-SOI MOSFET based charge integrated amplifier design as a read-out circuit of STJ detectors. The requirements for an operational amplifier used in the amplifier is estimated using SPICE simulation. The op-amp required to have a fast response(GBW$\geq$100 MHz) and it must have low power dissipation as compared to the cooling power of refrigerator.
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Submitted 27 July, 2015;
originally announced July 2015.
