Magneto-ionic modulation of the interlayer exchange interaction in synthetic antiferromagnets
Authors:
Maria-Andromachi Syskaki,
Takaaki Dohi,
Sergei Olegovich Filnov,
Sergey Alexeyevich Kasatikov,
Beatrice Bednarz,
Alevtina Smekhova,
Florian Kronast,
Mona Bhukta,
Rohit Pachat,
Johannes Wilhelmus van der Jagt,
Shimpei Ono,
Dafiné Ravelosona Ramasitera,
Jürgen Langer,
Mathias Kläui,
Liza Herrera Diez,
Gerhard Jakob
Abstract:
The electric-field control of magnetism is a highly promising and potentially effective approach for achieving energy-efficient applications. In recent times, there has been significant interest in the magneto-ionic effect in synthetic antiferromagnets, primarily due to its strong potential in the realization of high-density storage devices with ultra-low power consumption. However, the underlying…
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The electric-field control of magnetism is a highly promising and potentially effective approach for achieving energy-efficient applications. In recent times, there has been significant interest in the magneto-ionic effect in synthetic antiferromagnets, primarily due to its strong potential in the realization of high-density storage devices with ultra-low power consumption. However, the underlying mechanism responsible for the magneto-ionic effect on the interlayer exchange coupling (IEC) remains elusive. In this study, we have successfully identified that the magneto-ionic control of the properties of the top ferromagnetic layer of the synthetic antiferromagnet (SyAFM), which is in contact with the high ion mobility oxide, plays a pivotal role in driving the observed gate-induced changes to the IEC. Our findings provide crucial insights into the intricate interplay between stack structure and magnetoionic-field effect on magnetic properties in synthetic antiferromagnetic thin film systems.
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Submitted 16 June, 2023;
originally announced June 2023.
