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Dilatonic Geometrodynamics of a Two-Dimensional Curved Surface due to a Quantum Mechanically Confined Particle
Authors:
Leo Rodriguez,
Shanshan Rodriguez,
Zhenzhong Xing,
L. R. Ram-Mohan
Abstract:
We provide a unique and novel extension of da Costa's calculation of a quantum mechanically constrained particle by analyzing the perturbative back reaction of the quantum confined particle's eigenstates and spectra upon the geometry of the curved surface itself. We do this by first formulating a two dimensional action principle of the quantum constrained particle, which upon wave function variati…
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We provide a unique and novel extension of da Costa's calculation of a quantum mechanically constrained particle by analyzing the perturbative back reaction of the quantum confined particle's eigenstates and spectra upon the geometry of the curved surface itself. We do this by first formulating a two dimensional action principle of the quantum constrained particle, which upon wave function variation reproduces Schrödinger's equation including da Costa's surface curvature induced potentials. Given this action principle, we vary its functional with respect to the embedded two dimensional inverse-metric to obtain the respective geometrodynamical Einstein equation. We solve this resulting Einstein equation perturbatively by first solving the da Costa's Schrödinger equation to obtain an initial eigensystem, which is used as initial-input data for a perturbed metric inserted into the derived Einstein equation. As a proof of concept, we perform this calculation on a two-sphere and show its first iterative perturbed shape. We also include the back reaction of a constant external magnetic field in a separate calculation. The geometrodynamical analysis is performed within a two dimensional dilation gravity analog, due to several computational advantages.
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Submitted 4 February, 2024;
originally announced February 2024.
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Nöther Currents, Black Hole Entropy Universality and CFT Duality in Conformal Weyl Gravity
Authors:
Daksh Aggarwal,
Dominic Chang,
Quentin Dancewicz Helmers,
Nesibe Sivrioglu,
L. R. Ram-Mohan,
Leo Rodriguez,
Shanshan Rodriguez,
Raid Suleiman
Abstract:
In this paper we study black hole entropy universality within the Conformal Weyl gravity paradigm. We do this by first computing the entropy of specific vacuum and non-vacuum solutions, previously unexplored in Conformal Weyl gravity via both the Nöther current method and Wald's entropy formula. For the vacuum case, we explore the near horizon near extremal Kerr metric, which is also a vacuum solu…
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In this paper we study black hole entropy universality within the Conformal Weyl gravity paradigm. We do this by first computing the entropy of specific vacuum and non-vacuum solutions, previously unexplored in Conformal Weyl gravity via both the Nöther current method and Wald's entropy formula. For the vacuum case, we explore the near horizon near extremal Kerr metric, which is also a vacuum solution to Conformal Weyl gravity and not previously studied in this setting. For the non-vacuum case we couple the conformal Weyl gravity field equations to a near horizon (linear) $U(1)$ gauge potential and analyze the respective found solutions. We highlight the non-universality of black hole entropy between our studied black hole solutions of varying symmetries. However despite non-universality, the respective black hole entropies are in congruence with Wald's entropy formula for the specific gravity theory. Finally and despite non-universality, we comment on the construction of a near horizon CFT dual to one of our unique non-vacuum solutions. Due to the non-universality, we must introduce a parameter (similarly to entropy calculations in LQG) which we also call $γ$ and relating to the Weyl anomaly coefficient. The construction follows an $AdS_2/CFT_1$ correspondence in the near horizon, which enables the computation of the full asymptotic symmetry group of the chosen non-vacuum conformal Weyl black hole and its near horizon quantum CFT dual. We conclude with a discussion and outlook for future work.
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Submitted 23 June, 2022; v1 submitted 4 April, 2022;
originally announced April 2022.
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Lateral transition metal dichalcogenide heterostructures for high efficiency thermoelectric devices
Authors:
Sathwik Bharadwaj,
Ashwin Ramasubramaniam,
L. R. Ram-Mohan
Abstract:
Increasing demands for renewable sources of energy has been a major driving force for develo** efficient thermoelectric materials. Two-dimensional (2D) transition-metal dichalcogenides (TMDC) have emerged as promising candidates for thermoelectric applications due to their large effective mass and low thermal conductivity. In this article, we study the thermoelectric performance of lateral TMDC…
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Increasing demands for renewable sources of energy has been a major driving force for develo** efficient thermoelectric materials. Two-dimensional (2D) transition-metal dichalcogenides (TMDC) have emerged as promising candidates for thermoelectric applications due to their large effective mass and low thermal conductivity. In this article, we study the thermoelectric performance of lateral TMDC heterostructures within a multiscale quantum transport framework. Both $n$-type and $p$-type lateral heterostructures are considered for all possible combinations of semiconducting TMDCs: MoS$_2$, MoSe$_2$, WS$_2$, and WSe$_2$. The band alignment between these materials is found to play a crucial in enhancing the thermoelectric figure-of-merit ($ZT$) and power factor far beyond those of pristine TMDCs. In particular, we show that the room-temperature $ZT$ value of $n$-type WS$_2$ with WSe$_2$ triangular inclusions, is five times larger than the pristine WS$_2$ monolayer. $p$-type MoSe$_2$ with WSe$_2$ inclusions is also shown to have a room-temperature $ZT$ value about two times larger than the pristine MoSe$_2$ monolayer. The peak power factor values calculated here, are the highest reported amongst gapped 2D monolayers at room temperature. Hence, 2D lateral TMDC heterostructures open new avenues to develop ultra-efficient, planar thermoelectric devices.
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Submitted 3 December, 2020;
originally announced December 2020.
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Scalable first-principles-informed quantum transport theory in two-dimensional materials
Authors:
Sathwik Bharadwaj,
Ashwin Ramasubramaniam,
L. R. Ram-Mohan
Abstract:
Accurate determination of carrier transport properties in two-dimensional (2D) materials is critical for designing high-performance nano-electronic devices and quantum information platforms. While first-principles calculations effectively determine the atomistic potentials associated with defects and impurities, they are ineffective for direct modeling of carrier transport properties at length sca…
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Accurate determination of carrier transport properties in two-dimensional (2D) materials is critical for designing high-performance nano-electronic devices and quantum information platforms. While first-principles calculations effectively determine the atomistic potentials associated with defects and impurities, they are ineffective for direct modeling of carrier transport properties at length scales relevant for device applications. Here, we develop a scalable first-principles-informed quantum transport theory to investigate the carrier transport properties of 2D materials. We derive a non-asymptotic quantum scattering framework to obtain transport properties in proximity to scattering centers. We then bridge our scattering framework with $\textit{k}\cdot\textit{p}$ perturbation theory, with inputs from first-principles electronic structure calculations, to construct a versatile multiscale formalism that enables modeling of realistic devices at the mesoscale. Our formalism also accounts for the crucial contributions of decaying evanescent modes across heterointerfaces. We apply this formalism to study electron transport in lateral transition-metal dichalcogenide (TMDC) heterostructures and show that material inclusions can lead to an enhancement in electron mobility by an order of magnitude larger than pristine TMDCs.
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Submitted 3 December, 2020;
originally announced December 2020.
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Exploration of The Duality Between Generalized Geometry and Extraordinary Magnetoresistance
Authors:
Sathwik Bharadwaj,
L. R. Ram-Mohan,
Leo Rodriguez,
Shanshan Rodriguez
Abstract:
We outline the duality between the extraordinary magnetoresistance (EMR), observed in semiconductor-metal hybrids, and non-symmetric gravity coupled to a diffusive $U(1)$ gauge field. The corresponding gravity theory may be interpreted as the generalized complex geometry of the semi-direct product of the symmetric metric and the antisymmetric Kalb-Ramond field: ($g_{μν}+β_{μν}$). We construct the…
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We outline the duality between the extraordinary magnetoresistance (EMR), observed in semiconductor-metal hybrids, and non-symmetric gravity coupled to a diffusive $U(1)$ gauge field. The corresponding gravity theory may be interpreted as the generalized complex geometry of the semi-direct product of the symmetric metric and the antisymmetric Kalb-Ramond field: ($g_{μν}+β_{μν}$). We construct the four dimensional covariant field theory and compute the resulting equations of motion. The equations encode the most general form of EMR within a well defined variational principle, for specific lower dimensional embedded geometric scenarios. Our formalism also reveals the emergence of additional diffusive pseudo currents for a completely dynamic field theory of EMR. The proposed equations of motion now include terms that induce geometrical deformations in the device geometry in order to optimize the EMR. This bottom-up dual description between EMR and generalized geometry/gravity lends itself to a deeper insight into the EMR effect with the promise of potentially new physical phenomena and properties.
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Submitted 27 April, 2020; v1 submitted 12 December, 2019;
originally announced December 2019.
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Tuning spatial entanglement in interacting few-electron quantum dots
Authors:
Dung. N. Pham,
Sathwik Bharadwaj,
L. R. Ram-Mohan
Abstract:
Confined geometries such as semiconductor quantum dots are promising candidates for fabricating quantum computing devices. When several quantum dots are in proximity, spatial correlation between electrons in the system becomes significant. In this article, we develop a fully variational action integral formulation for calculating accurate few-electron wavefunctions in configuration space, irrespec…
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Confined geometries such as semiconductor quantum dots are promising candidates for fabricating quantum computing devices. When several quantum dots are in proximity, spatial correlation between electrons in the system becomes significant. In this article, we develop a fully variational action integral formulation for calculating accurate few-electron wavefunctions in configuration space, irrespective of potential geometry. To evaluate the Coulomb integrals with high accuracy, a novel numerical integration method using multiple Gauss quadratures is proposed. Using this approach, we investigate the confinement of two electrons in double quantum dots, and evaluate the spatial entanglement. We investigate the dependence of spatial entanglement on various geometrical parameters. We derive the two-particle wavefunctions in the asymptotic limit of the separation distance between quantum dots, and obtain universal saturation values for the spatial entanglement. Resonances in the entanglement values due to avoided level-crossings of states are observed. We also demonstrate the formation of electron clusters, and show that the entanglement value is a good indicator for the formation of such clusters. Further, we show that a precise tuning of the entanglement values is feasible with applied external electric fields.
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Submitted 9 December, 2019;
originally announced December 2019.
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Electromagnetic calculations for multiscale and multiphysics simulations: a new perspective
Authors:
Dung N. Pham,
Sathwik Bharadwaj,
L. R. Ram-Mohan
Abstract:
Present day electromagnetic field calculations have limitations that are due to techniques employing edge-based discretization methods. While these vector finite element methods solve the issues of tangential continuity of fields and the removal of spurious solutions, resulting fields do not have a unique directionality at nodes in the discretization mesh. This review presents electromagnetic fiel…
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Present day electromagnetic field calculations have limitations that are due to techniques employing edge-based discretization methods. While these vector finite element methods solve the issues of tangential continuity of fields and the removal of spurious solutions, resulting fields do not have a unique directionality at nodes in the discretization mesh. This review presents electromagnetic field calculations in waveguides, cavity fields, and photonic crystals. We develop Hermite interpolation polynomials and node-based finite element methods based on variational principles. We show that the Hermite-finite element method (HFEM) delivers high accuracy and suitable for multiscale calculations with mixed physics. We use group representation theory to derive the HFEM polynomial basis set in two-dimensions. The energy level degeneracy in a cubic cavity can be denumerably large even though the symmetry of the cube. We show that the additional operators available for the problem lead to accidental degeneracy. We discuss this remarkable degeneracy and its reduction in detail. We consider photonic crystals corresponding to a 2D checkerboard superlattice structure, and the Escher drawing of the Horsemen which satisfies the nonsymmorphic group pg. We show that HFEM is able to deliver high accuracy in such spatially complex examples with far less computational effort than Fourier expansion methods. The algorithms developed here hold the promise of successful modeling of multi-physics systems. This general method is applicable to a broad class of physical systems, to semiconducting lasers which require simultaneous modeling of transitions in quantum wells or dots together with EM cavity calculations, to modeling plasmonic structures in the presence of EM field emissions, and to on-chip propagation within monolithic integrated circuits.
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Submitted 9 December, 2019;
originally announced December 2019.
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Finite element modeling of extraordinary optoconductance in GaAs-In metal-semiconductor hybrid structures
Authors:
K. A. Wieland,
Yun Wang,
S. A. Solin,
A. M. Girgis,
L. R. Ram-Mohan
Abstract:
We present a detailed discussion of extraordinary optoconductance (EOC). Experimental data was acquired via macroscopic metal-semiconductor hybrid structures composed of GaAs and In and subjected to illumination from an Ar ion laser. A drift diffusion model using the finite element method (FEM) provided a reasonable fit to the data. EOC is explored as a function of laser position, bias current,…
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We present a detailed discussion of extraordinary optoconductance (EOC). Experimental data was acquired via macroscopic metal-semiconductor hybrid structures composed of GaAs and In and subjected to illumination from an Ar ion laser. A drift diffusion model using the finite element method (FEM) provided a reasonable fit to the data. EOC is explored as a function of laser position, bias current, laser power density, and temperature. The positional dependence of the voltage is accounted for by the Dember effect, with the model incorporating the excess hole distribution based on the carrier mobility, and thus the mean free path. The bias current is found to produce a linear voltage offset and does not influence the EOC. A linear relationship is found between the laser power density and the voltage in the bare and hybrid devices. This dependence is reproduced in the model by a generation rate parameter which is related to the power density. Incorporating the mobility and diffusion temperature dependence, the model directly parallels the temperature dependence of the EOC without the use of fitting parameters.
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Submitted 9 March, 2006; v1 submitted 6 February, 2006;
originally announced February 2006.
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Carrier Mobilities in Delta-doped Heterostructures
Authors:
Y. Shao,
S. A. Solin,
L. R. Ram-Mohan
Abstract:
For applications to sensor design, the product nxmu of the electron density n and the mobility mu is a key parameter to be optimized for enhanced device sensitivity. We model the carrier mobility in a two dimensional electron gas (2DEG) layer developed in a delta-doped heterostructure. The subband energy levels, electron wave functions, and the band-edge profile are obtained by numerically solvi…
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For applications to sensor design, the product nxmu of the electron density n and the mobility mu is a key parameter to be optimized for enhanced device sensitivity. We model the carrier mobility in a two dimensional electron gas (2DEG) layer developed in a delta-doped heterostructure. The subband energy levels, electron wave functions, and the band-edge profile are obtained by numerically solving the Schrodinger and Poisson equations self-consistently. The electron mobility is calculated by including contributions of scattering from ionized impurities, the background neutral impurities, the deformation potential acoustic phonons, and the polar optical phonons. We calculate the dependencies of nxmu on temperature, spacer layer thickness, do** density, and the quantum well thickness. The model is applied to delta-doped quantum well heterostructures of AlInSb-InSb. At low temperature, mobilities as high as 1.3x10^3 m^2/Vs are calculated for large spacer layers (400 A) and well widths (400 A). The corresponding room temperature mobility is 10 m^2/Vs. The dependence of nxmu shows a maximum for a spacer thickness of 300 A for higher background impurity densities while it continues to increase monotonically for lower background impurity densities; this has implications for sensor design.
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Submitted 6 February, 2006;
originally announced February 2006.
