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Estimation of the Total Mass of 10 Exoplanets and their Host Stars Based on the Primary Transit Method
Authors:
A. Poro,
M. Hedayatjoo,
Y. Dashti,
F. MohammadiZadeh,
M. Hashemi,
E. Rajaei,
A. Kazemi,
A. Sarostad,
M. Nastaran,
Z. Zarei,
A. Dehghani Ghanatghestani
Abstract:
In this study, ten exoplanets were studied. Their photometric observations were obtained from the ETD. After performing the data reduction steps, their parameters were obtained through Exofast online software. Then the total mass of the exoplanets and the host stars were obtained through a software that was mentioned in this study. The location of the host stars in this study was also plotted in t…
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In this study, ten exoplanets were studied. Their photometric observations were obtained from the ETD. After performing the data reduction steps, their parameters were obtained through Exofast online software. Then the total mass of the exoplanets and the host stars were obtained through a software that was mentioned in this study. The location of the host stars in this study was also plotted in the H-R diagram.
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Submitted 2 June, 2020;
originally announced June 2020.
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The influence of gain compression factor on dynamical properties of single level InAs/GaAs quantum dot lasers
Authors:
Mostafa Qorbani,
Esfandiar Rajaei,
Omid Hajizadeh,
Mahdi Ahmadi Borji
Abstract:
In this paper, by representing a single level rate equation model for InAs/GaAs quantum dot lasers and computations by fourth order Runge-Kutta method some characteristics of the output laser are considered. The change of photon number in time and current and also the output power versus current with different gain compression factors are investigated for lasing from ground state (GS). Afterwards,…
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In this paper, by representing a single level rate equation model for InAs/GaAs quantum dot lasers and computations by fourth order Runge-Kutta method some characteristics of the output laser are considered. The change of photon number in time and current and also the output power versus current with different gain compression factors are investigated for lasing from ground state (GS). Afterwards, the response function of small signal modulation for ground state in constant current but different gain compressions is surveyed. At last, we find an optimum value for gain compression factor in lasing from GS.
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Submitted 10 February, 2016;
originally announced February 2016.
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Energy levels of In_x Ga_(1-x) As/GaAs quantum dot laser with different sizes
Authors:
Esfandiar Rajaei,
Mahdi Ahmadi Borji
Abstract:
In this paper, we have studied the strain, bandedge, and energy levels of cubic InGaAs quantum dots (QDs) surrounded by GaAs. It is shown that overall strain value is larger in InGaAs-GaAs interfaces, and also in smaller QDs. Also, it is proved that conduction and valence band-edges and electron-hole levels are size dependent; larger QD sizes appeared to result in the lower recombination energies.…
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In this paper, we have studied the strain, bandedge, and energy levels of cubic InGaAs quantum dots (QDs) surrounded by GaAs. It is shown that overall strain value is larger in InGaAs-GaAs interfaces, and also in smaller QDs. Also, it is proved that conduction and valence band-edges and electron-hole levels are size dependent; larger QD sizes appeared to result in the lower recombination energies. Moreover, more number of energy levels separates from the continuum states of bulk GaAs and comes down into the QD separate levels. In addition, degeneracy of eigenvalues was found to be subjected to change by size variation. Our results coincide with former similar researches.
Keywords: strain, bandedge, engineering energy levels, quantum dot size, QD laser
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Submitted 1 November, 2015;
originally announced November 2015.
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Impact of dot size on dynamical characteristics of InAs/GaAs quantum dot lasers
Authors:
Esfandiar Rajaei,
Mahdi Ahmadi Borji
Abstract:
The purpose of this research is to study laser dynamics of InAs/GaAs Quantum Dot Lasers (QDLs) by changing QD energy levels. To date, most of the investigations have focused on only one of these circumstances, and hardly the result of change in the energy levels can be seen in lasing. In this work, in the first step, energy levels of lens-shape QDs are investigated by the eight-band k.p method, th…
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The purpose of this research is to study laser dynamics of InAs/GaAs Quantum Dot Lasers (QDLs) by changing QD energy levels. To date, most of the investigations have focused on only one of these circumstances, and hardly the result of change in the energy levels can be seen in lasing. In this work, in the first step, energy levels of lens-shape QDs are investigated by the eight-band k.p method, their variation for different QD sizes are surveyed, and recombination energies of the discrete levels are determined. Then, by representing a three-level InAs/GaAs QD laser, dynamics of such a laser device is numerically studied by rate equations in which homogeneous and inhomogeneous broadenings are taken into account. The lasing process for both Ground State (GS) and Excited States (ES) was found to be much sensitive to the QD size. It was observed that in larger QDs, photon number and bandwidth of the small signal modulation decrease but turn-on delay, maximum output power, and threshold current of gain increase. It was also found that for a good modulation, smaller QDs, and form the point of view of high-power applications, larger QDs seem better.
Keywords: quantum dot lasers, QD size, energy level control, small signal modulation
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Submitted 1 November, 2015;
originally announced November 2015.
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Influence of Indium-Percentage Variation on Dynamical Characteristics of InxGa1-xAs/GaAs(001) Quantum Dot Lasers
Authors:
Mahdi Ahmadi Borji,
Esfandiar Rajaei
Abstract:
The influence of indium percentage on dynamical characteristics of InxGa1-xAs/GaAs(001) quantum dot lasers (QDLs) is investigated. Energy levels of self-organized truncated-cone-shape QDs are calculated by means of the eight-band k.p model, and their dependence to indium percentage is surveyed. Then, by presenting a three-level model and numerical solution of the resulting rate equations, laser pr…
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The influence of indium percentage on dynamical characteristics of InxGa1-xAs/GaAs(001) quantum dot lasers (QDLs) is investigated. Energy levels of self-organized truncated-cone-shape QDs are calculated by means of the eight-band k.p model, and their dependence to indium percentage is surveyed. Then, by presenting a three-level model and numerical solution of the resulting rate equations, laser properties are determined. Our results show that inclusion of more indium gives rise in the reduced energy gap and electron-hole recombination energy. Moreover, lasing process for both Ground State (GS) and Excited States (ES) sound to be sensitive to indium percentage. It is shown that rise of indium percentage at fixed injected current results in the increased ES turn-on delay and GS photon number and 3dB modulation bandwidth, and decreased ES photon number, GS turn on delay, amplitude of relaxation oscillations, output power, and ES 3dB modulation bandwidth; but has no effect on threshold current and laser gain. At last, we find an optimized cavity length which was likely to be independent of indium percentage. Keywords: QD lasers; Engineering energy levels; Small signal modulation; Nanocrystalline materials; Indium component
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Submitted 1 November, 2015;
originally announced November 2015.
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Energy Level Engineering in In_x Ga_(1-x) As/GaAs Quantum Dots Applicable to QD-Lasers by Changing the Stoichiometric Percentage
Authors:
Mahdi Ahmadi Borji,
Esfandiar Rajaei
Abstract:
Band edge and energy levels of truncated pyramidal In_x Ga_(1-x) As/GaAs (001) quantum dots are studied by single-band effective mass approach, and the dependence to stoichiometric percentages is investigated. It is shown that enhancement of indium percentage decreases the band gap and the recombination energy of electrons and holes. Our principal result is that decrease of recombination energy an…
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Band edge and energy levels of truncated pyramidal In_x Ga_(1-x) As/GaAs (001) quantum dots are studied by single-band effective mass approach, and the dependence to stoichiometric percentages is investigated. It is shown that enhancement of indium percentage decreases the band gap and the recombination energy of electrons and holes. Our principal result is that decrease of recombination energy and band gap is nonlinear and the slopes are different band gap and e-h recombination energy. In addition, it is proved that strain tensor is diagonal along z-axis and the absolute value of the components gets larger by more indium inclusion. Our results appear to be in very good consonance with similar studies.
Keywords: quantum dot, band structure, strain tensor, indium percentage.
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Submitted 1 November, 2015;
originally announced November 2015.
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Substrate Index Dependence of Energy Levels in In_(0.4) Ga_(0.6) As/GaAs Quantum Dots Applicable to QD-Lasers (a six-band k.p approximation)
Authors:
Esfandiar Rajaei,
Mahdi Ahmadi Borji
Abstract:
Quantum dot lasers have been the focus of researchers due to their interesting optical properties owing to quantum confinement of carriers. In epitaxial quantum dots formed on a substrate, band-edge diagrams sound to more complex than simple bulk materials because of the important role of strain. Strain tensor is strongly dependent to lattice mismatch. Various substrate indexes have been used in t…
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Quantum dot lasers have been the focus of researchers due to their interesting optical properties owing to quantum confinement of carriers. In epitaxial quantum dots formed on a substrate, band-edge diagrams sound to more complex than simple bulk materials because of the important role of strain. Strain tensor is strongly dependent to lattice mismatch. Various substrate indexes have been used in the laser devices, and a number of research groups elaborate to find the best substrate index. In this research band edge, energy levels and strain effects of cubic In_0.4 Ga_0.6 As-GaAs quantum dots are studied by 6-band k.p model and their dependence to substrate index is investigated. It is shown that change of substrate index affects the band gap and transition energy of electrons and holes. Moreover, we show that components of strain tensor are strongly sensitive to surface index, and symmetry breaks along space. Our results appear to be in very good consonance with represented formula and similar researches.
Keywords: substrate index, quantum dot laser, band edge, strain tensor.
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Submitted 1 November, 2015;
originally announced November 2015.
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Effect of temperature on In_x Ga_(1-x) As/GaAs quantum dot lasing
Authors:
Mahdi Ahmadi Borji,
Esfandiar Rajaei
Abstract:
In this paper, the strain, band-edge, and energy levels of pyramidal In_x Ga_(1-x) As/GaAs quantum dot lasers (QDLs) are investigated by 1-band effective mass approach. It is shown that while temperature has no remarkable effect on the strain tensor, the band gap lowers and the radiation wavelength elongates by rising temperature. Also, band-gap and laser energy do not linearly decrease by tempera…
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In this paper, the strain, band-edge, and energy levels of pyramidal In_x Ga_(1-x) As/GaAs quantum dot lasers (QDLs) are investigated by 1-band effective mass approach. It is shown that while temperature has no remarkable effect on the strain tensor, the band gap lowers and the radiation wavelength elongates by rising temperature. Also, band-gap and laser energy do not linearly decrease by temperature rise. Our results appear to coincide with former researches.
Keywords: quantum dot laser, strain tensor, band edge, nano-electronics, temperature effect
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Submitted 1 November, 2015;
originally announced November 2015.
