Flat silicon gradient index lens with deep reactive-ion-etched 3-layer anti-reflection structure for millimeter and submillimeter wavelengths
Authors:
Fabien Defrance,
Cecile Jung-Kubiak,
John Gill,
Sofia Rahiminejad,
Theodore Macioce,
Jack Sayers,
Goutam Chattopadhyay,
Sunil R. Golwala
Abstract:
We present the design, fabrication, and characterization of a 100 mm diameter, flat, gradient-index (GRIN) lens fabricated with high-resistivity silicon, combined with a three-layer anti-reflection (AR) structure optimized for 160-355 GHz. Multi-depth, deep reactive-ion etching (DRIE) enables patterning of silicon wafers with sub-wavelength structures (posts or holes) to locally change the effecti…
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We present the design, fabrication, and characterization of a 100 mm diameter, flat, gradient-index (GRIN) lens fabricated with high-resistivity silicon, combined with a three-layer anti-reflection (AR) structure optimized for 160-355 GHz. Multi-depth, deep reactive-ion etching (DRIE) enables patterning of silicon wafers with sub-wavelength structures (posts or holes) to locally change the effective refractive index and thus create anti-reflection layers and a radial index gradient. The structures are non-resonant and, for sufficiently long wavelengths, achromatic. Hexagonal holes varying in size with distance from the optical axis create a parabolic index profile decreasing from 3.15 at the center of the lens to 1.87 at the edge. The AR structure consists of square holes and cross-shaped posts. We have fabricated a lens consisting of a stack of five 525 $μ$m thick GRIN wafers and one AR wafer on each face. We have characterized the lens over the frequency range 220-330 GHz, obtaining behavior consistent with Gaussian optics down to -14 dB and transmittance between 75% and 100%.
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Submitted 10 May, 2024; v1 submitted 31 January, 2024;
originally announced January 2024.
Flat low-loss silicon gradient index lens for millimeter and submillimeter wavelengths
Authors:
Fabien Defrance,
Cecile Jung-Kubiak,
Sofia Rahiminejad,
Theodore Macioce,
Jack Sayers,
Jake Connors,
Simon Radford,
Goutam Chattopadhyay,
Sunil Golwala
Abstract:
We present the design, simulation, and planned fabrication process of a flat high resistivity silicon gradient index (GRIN) lens for millimeter and submillimeter wavelengths with very low absorption losses. The gradient index is created by subwavelength holes whose size increases with the radius of the lens. The effective refractive index created by the subwavelength holes is constant over a very…
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We present the design, simulation, and planned fabrication process of a flat high resistivity silicon gradient index (GRIN) lens for millimeter and submillimeter wavelengths with very low absorption losses. The gradient index is created by subwavelength holes whose size increases with the radius of the lens. The effective refractive index created by the subwavelength holes is constant over a very wide bandwidth, allowing the fabrication of achromatic lenses up to submillimeter wavelengths. The designed GRIN lens was successfully simulated and shows an expected efficiency better than that of a classic silicon plano-concave spherical lens with approximately the same thickness and focal length. Deep reactive ion etching (DRIE) and wafer-bonding of several patterned wafers will be used to realize our first GRIN lens prototype.
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Submitted 21 November, 2019;
originally announced November 2019.
