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Showing 1–3 of 3 results for author: Rahbarihagh, Y

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  1. Modeling of bend discontinuity in plasmonic and spoof plasmonic waveguides

    Authors: Yaghoob Rahbarihagh, Jalil Rashed-Mohassel, Mahmoud Shahabadi

    Abstract: The paper proposes a method to characterize the bend discontinuity for plasmonic and spoof plasmonic waveguides in terms of scattering parameters. By means of this method, the waveguide is modelled by a two-port network and its scattering parameters are extracted. The parameters for the L-shaped sharp curved bends at different frequencies and under different bending angles are determined.

    Submitted 23 March, 2015; originally announced March 2015.

  2. arXiv:1410.2814  [pdf

    physics.comp-ph physics.optics

    Modal Analysis for a Waveguide of Nanorods Using the Field Computation for a Chain of Finite Length

    Authors: Yaghoob Rahbarihagh, Farid Kalhor, Jalil Rashed-Mohassel, Mahmoud Shahabadi

    Abstract: The propagation of light along an infinite 2D chain of silver nanorods is analyzed and the dispersion for this waveguide is computed using field computation for a finite chain of nanorods. In this work, Generalized Multipole Technique is used for the analysis. This method calculates the imaginary and real parts of the propagation constant by exciting the chain in one end and observing propagation… ▽ More

    Submitted 10 October, 2014; originally announced October 2014.

    Journal ref: Applied Computational Electromagnetic Society Journal, vol. 29, no. 2, pp. 140 148, Feb. 2014

  3. arXiv:1410.0994  [pdf

    cond-mat.mtrl-sci cond-mat.mes-hall

    Temporal and Thermal Stability of Al2O3-passivated Phosphorene MOSFETs

    Authors: Xi Luo, Yaghoob Rahbarihagh, James C. M. Hwang, Han Liu, Yuchen Du, Peide D. Ye

    Abstract: This letter evaluates temporal and thermal stability of a state-of-the-art few-layer phosphorene MOSFET with Al2O3 surface passivation and Ti/Au top gate. As fabricated, the phosphorene MOSFET was stable in atmosphere for at least 100 h. With annealing at 200°C in dry nitrogen for 1 h, its drain current increased by an order of magnitude to approximately 100 mA/mm, which could be attributed to the… ▽ More

    Submitted 3 October, 2014; originally announced October 2014.

    Comments: To be published in IEEE Electron Device Letters