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Efficient, indistinguishable telecom C-band photons using a tapered nanobeam
Authors:
Mohammad Habibur Rahaman,
Samuel Harper,
Chang-Min Lee,
Kyu-Young Kim,
Mustafa Atabey Buyukkaya,
Victor J. Patel,
Samuel D. Hawkins,
Je-Hyung Kim,
Sadhvikas Addamane,
Edo Waks
Abstract:
Telecom C-band single photons exhibit the lowest attenuation in optical fibers, enabling long-haul quantum-secured communication. However, efficient coupling with optical fibers is crucial for these single photons to be effective carriers in long-distance transmission. In this work, we demonstrate an efficient fiber-coupled single photon source at the telecom C-band using InAs/InP quantum dots cou…
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Telecom C-band single photons exhibit the lowest attenuation in optical fibers, enabling long-haul quantum-secured communication. However, efficient coupling with optical fibers is crucial for these single photons to be effective carriers in long-distance transmission. In this work, we demonstrate an efficient fiber-coupled single photon source at the telecom C-band using InAs/InP quantum dots coupled to a tapered nanobeam. The tapered nanobeam structure facilitates directional emission that is mode-matched to a lensed fiber, resulting in a collection efficiency of up to 65% from the nanobeam to a single-mode fiber. Using this approach, we demonstrate single photon count rates of 575 $\pm$ 5 Kcps and a single photon purity of $g^2$ (0) = 0.015 $\pm$ 0.003. Additionally, we demonstrate Hong-Ou Mandel interference from the emitted photons with a visibility of 0.84 $\pm$ 0.06. From these measurements, we determine a photon coherence time of 450 $\pm$ 20 ps, a factor of just 8.3 away from the lifetime limit. This work represents an important step towards the development of telecom C-band single-photon sources emitting bright, pure, and indistinguishable photons, which are necessary to realize fiber-based long-distance quantum networks
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Submitted 5 April, 2024; v1 submitted 1 April, 2024;
originally announced April 2024.
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Optimizing the quality factor of InP nanobeam cavities using atomic layer deposition
Authors:
Mohammad Habibur Rahaman,
Chang-Min Lee,
Mustafa Atabey Buyukkaya,
Samuel Harper,
Fariba Islam,
Edo Waks
Abstract:
Photonic crystal nanobeam cavities are valued for their small mode volume, CMOS compatibility, and high coupling efficiency crucial features for various low-power photonic applications and quantum information processing. However, despite their potential, nanobeam cavities often suffer from low quality factors due to fabrication imperfections that create surface states and optical absorption. In th…
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Photonic crystal nanobeam cavities are valued for their small mode volume, CMOS compatibility, and high coupling efficiency crucial features for various low-power photonic applications and quantum information processing. However, despite their potential, nanobeam cavities often suffer from low quality factors due to fabrication imperfections that create surface states and optical absorption. In this work, we demonstrate InP nanobeam cavities with up to 140% higher quality factors by applying a coating of Al$_2$O$_3$ via atomic layer deposition to terminate dangling bonds and reduce surface absorption. Additionally, changing the deposition thickness allows precise tuning of the cavity mode wavelength without compromising the quality factor. This Al$_2$O$_3$ atomic layer deposition approach holds great promise for optimizing nanobeam cavities that are well-suited for integration with a wide range of photonic applications.
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Submitted 10 December, 2023;
originally announced December 2023.
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Cavity enhanced emission from a silicon T center
Authors:
Fariba Islam,
Chang-Min Lee,
Samuel Harper,
Mohammad Habibur Rahaman,
Yuqi Zhao,
Neelesh Kumar Vij,
Edo Waks
Abstract:
Silicon T centers present the promising possibility to generate optically active spin qubits in an all-silicon device. However, these color centers exhibit long excited state lifetimes and a low Debye-Waller factor, making them dim emitters with low efficiency into the zero-phonon line. Nanophotonic cavities can solve this problem by enhancing radiative emission into the zero-phonon line through t…
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Silicon T centers present the promising possibility to generate optically active spin qubits in an all-silicon device. However, these color centers exhibit long excited state lifetimes and a low Debye-Waller factor, making them dim emitters with low efficiency into the zero-phonon line. Nanophotonic cavities can solve this problem by enhancing radiative emission into the zero-phonon line through the Purcell effect. In this work we demonstrate cavity-enhanced emission from a single T center in a nanophotonic cavity. We achieve a two-orders of magnitude increase in brightness of the zero-phonon line relative to waveguide-coupled emitters, a 23% collection efficiency from emitter to fiber, and an overall emission efficiency into the zero-phonon line of 63.4%. We also observe a lifetime enhancement of 5, corresponding to a Purcell factor exceeding 18 when correcting for the emission to the phonon sideband. These results pave the way towards efficient spin-photon interfaces in silicon photonics.
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Submitted 25 October, 2023; v1 submitted 20 October, 2023;
originally announced October 2023.
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Hybrid Si-GaAs photonic crystal cavity for lasing and bistability
Authors:
Mohammad Habibur Rahaman,
Chang-Min Lee,
Mustafa Atabey Buyukkaya,
Yuqi Zhao,
Edo Waks
Abstract:
The heterogeneous integration of silicon with III-V materials provides a way to overcome silicon's limited optical properties toward a broad range of photonic applications. Hybrid modes are a promising way to make heterogeneous Si/III-V devices, but it is still unclear how to engineer these modes to make photonic crystal cavities. Herein, using 3D finite-difference time-domain simulation, a hybrid…
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The heterogeneous integration of silicon with III-V materials provides a way to overcome silicon's limited optical properties toward a broad range of photonic applications. Hybrid modes are a promising way to make heterogeneous Si/III-V devices, but it is still unclear how to engineer these modes to make photonic crystal cavities. Herein, using 3D finite-difference time-domain simulation, a hybrid Si-GaAs photonic crystal cavity design enables cavity mode confinement in GaAs without directly patterning that operates at telecom wavelengths. The hybrid cavity consists of a patterned silicon waveguide nanobeam that is evanescently coupled to a GaAs slab with quantum dots. We show that by engineering the hybrid modes, we can control the degree of coupling to the active material, which leads to a tradeoff between cavity quality factor and optical gain and nonlinearity. With this design, we demonstrate a cavity mode in the Si-GaAs heterogeneous region, which enables strong interaction with the quantum dots in the GaAs slab for applications such as low-power-threshold lasing and optical bistability (156 nW and 18.1 $μ$W, respectively). This heterogeneous integration of an active III-V material with silicon via a hybrid cavity design suggests a promising approach for achieving on-chip light generation and low-power nonlinear platforms.
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Submitted 6 February, 2023;
originally announced February 2023.
