Influence of Gamma-X mixing on optical orientation and alignment of excitons in (In,Al)As/AlAs quantum dots
Authors:
S. V. Nekrasov,
N. O. Mikhailenko,
M. D. Ragoza,
T. S. Shamirzaev,
Yu. G. Kusrayev
Abstract:
The effect of Gamma-X mixing on the energy levels fine structure of indirect in k-space excitons in an ensemble of (In,Al)As/AlAs quantum dots with type I band alignment was experimentally studied. Using the methods of optical spin orientation and optical alignment in a magnetic field, an increase in the anisotropic exchange splitting of excitonic levels (from approximately 0.6 to 5 ueV) due to th…
▽ More
The effect of Gamma-X mixing on the energy levels fine structure of indirect in k-space excitons in an ensemble of (In,Al)As/AlAs quantum dots with type I band alignment was experimentally studied. Using the methods of optical spin orientation and optical alignment in a magnetic field, an increase in the anisotropic exchange splitting of excitonic levels (from approximately 0.6 to 5 ueV) due to the Gamma-X mixing was revealed. The extent of direct electronic states admixing to indirect ones depends on the size of the quantum dot. On the other hand, the optical and spin properties of excitons change radically with increasing of the Gamma states admixture to the X states: in the absence of a magnetic field, the optical orientation of excitons decreases from 18 to 3%, while the alignment of excitons is restored from 6 to 53%.
△ Less
Submitted 7 December, 2023;
originally announced December 2023.
Electrical resistance associated with the scattering of optically oriented electrons in n-GaAs
Authors:
M. D. Ragoza,
N. V. Kozyrev,
S. V. Nekrasov,
B. R. Namozov,
Yu. G. Kusrayev,
N. Bart,
A. Ludwig,
A. D. Wieck
Abstract:
In a bulk GaAs crystal, an unusual magnetoresistance effect, which takes place when a spin-polarized current flows through the sample, was detected. Under conditions of optical pum** of electron spins, an external magnetic field directed along the electric current and perpendicular to the oriented spins decreases the resistance of the material. The phenomenon is due to the spin-dependent scatter…
▽ More
In a bulk GaAs crystal, an unusual magnetoresistance effect, which takes place when a spin-polarized current flows through the sample, was detected. Under conditions of optical pum** of electron spins, an external magnetic field directed along the electric current and perpendicular to the oriented spins decreases the resistance of the material. The phenomenon is due to the spin-dependent scattering of electrons by neutral donors. It was found that the sign of the magnetoresistance does not depend on the sign of the exciting light circular polarization, the effect is even with respect to the sign of the spin polarization of the carriers, which indicates a correlation between the spins of optically oriented free electrons and electrons localized on donors.
△ Less
Submitted 30 November, 2023;
originally announced November 2023.
