Growth, catalysis and faceting of $α$-Ga$_2$O$_3$ and $α$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ on $m$-plane $α$-Al$_2$O$_3$ by molecular beam epitaxy
Authors:
Martin S. Williams,
Manuel Alonso-Orts,
Marco Schowalter,
Alexander Karg,
Sushma Raghuvansy,
Jon P. McCandless,
Debdeep Jena,
Andreas Rosenauer,
Martin Eickhoff,
Patrick Vogt
Abstract:
The growth of $α$-Ga$_2$O$_3$ and $α$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ on $m$-plane $α$-Al$_2$O$_3$(10$\bar{1}$0) by molecular beam epitaxy (MBE) and metal-oxide-catalyzed epitaxy (MOCATAXY) is investigated. By systematically exploring the parameter space accessed by MBE and MOCATAXY, phase-pure $α$-Ga$_2$O$_3$(10$\bar{1}$0) and $α$-(In$_x$Ga$_{1-x}$)$_2$O$_3$(10$\bar{1}$0) thin films are realized. The…
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The growth of $α$-Ga$_2$O$_3$ and $α$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ on $m$-plane $α$-Al$_2$O$_3$(10$\bar{1}$0) by molecular beam epitaxy (MBE) and metal-oxide-catalyzed epitaxy (MOCATAXY) is investigated. By systematically exploring the parameter space accessed by MBE and MOCATAXY, phase-pure $α$-Ga$_2$O$_3$(10$\bar{1}$0) and $α$-(In$_x$Ga$_{1-x}$)$_2$O$_3$(10$\bar{1}$0) thin films are realized. The presence of In on the $α$-Ga$_2$O$_3$ growth surface remarkably expands its growth window far into the metal-rich flux regime and to higher growth temperatures. With increasing O-to-Ga flux ratio ($R_{\text{O}}$), In incorporates into $α$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ up to $x \leq 0.08$. Upon a critical thickness, $β$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ nucleates and subsequently heteroepitaxially grows on top of $α$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ facets. Metal-rich MOCATAXY growth conditions, where $α$-Ga$_2$O$_3$ would not conventionally stabilize, lead to single-crystalline $α$-Ga$_2$O$_3$ with negligible In incorporation and improved surface morphology. Higher $T_{\text{G}}$ further results in single-crystalline $α$-Ga$_2$O$_3$ with well-defined terraces and step edges at their surfaces. For $R_{\text{O}} \leq 0.53$, In acts as a surfactant on the $α$-Ga$_2$O$_3$ growth surface by favoring step edges, while for $R_{\text{O}} \geq 0.8$, In incorporates and leads to a-plane $α$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ faceting and the subsequent ($\bar{2}$01) $β$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ growth on top. Thin film analysis by STEM reveals highly crystalline $α$-Ga$_2$O$_3$ layers and interfaces. We provide a phase diagram to guide the MBE and MOCATAXY growth of single-crystalline $α$-Ga$_2$O$_3$ on $α$-Al$_2$O$_3$(10$\bar{1}$0).
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Submitted 21 November, 2023;
originally announced November 2023.
