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Emergent inhomogeneity and non-locality in a graphene field-effect transistor on a near-parallel moire superlattice of transition metal dichalcogenides
Authors:
Shaili Sett,
Rahul Debnath,
Arup Singha,
Shinjan Mandal,
Jyothsna K,
Monika Bhakar,
Kenji Watanabe,
Takashi Taniguchi,
Varun Raghunathan,
Goutam Sheet,
Manish Jain,
Arindam Ghosh
Abstract:
At near-parallel orientation, twisted bilayer of transition metal dichalcogenides exhibit inter-layer charge transfer-driven out-of-plane ferroelectricity that may lead to unique electronic device architectures. Here we report detailed electrical transport in a dual-gated graphene field-effect transistor placed on 3R stacked twisted bilayer of WSe2 at a twist angle of 2.1 degree. We observe hyster…
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At near-parallel orientation, twisted bilayer of transition metal dichalcogenides exhibit inter-layer charge transfer-driven out-of-plane ferroelectricity that may lead to unique electronic device architectures. Here we report detailed electrical transport in a dual-gated graphene field-effect transistor placed on 3R stacked twisted bilayer of WSe2 at a twist angle of 2.1 degree. We observe hysteretic transfer characteristics and an emergent charge inhomogeneity with multiple local Dirac points as the electric displacement field (D) is increased. Concomitantly, we also observe a strong non-local voltage signal at D = 0 V/nm that decreases rapidly with increasing D. A linear scaling of the non-local signal with longitudinal resistance suggests edge mode transport, which we attribute to the breaking of valley symmetry of the graphene channel due to the spatially fluctuating electric field from the moire domains of the underlying twisted WSe2. A quantitative analysis connecting the non-locality and channel inhomogeneity suggests emergence of finite-size domains in the graphene channel that modulate the charge and the valley currents simultaneously. This work underlines efficient control and impact of interfacial ferroelectricity that can trigger a new genre of devices for twistronic applications.
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Submitted 28 May, 2024;
originally announced May 2024.
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Harmonic to anharmonic tuning of moiré potential leading to unconventional Stark effect and giant dipolar repulsion in WS$_2$/WSe$_2$ heterobilayer
Authors:
Suman Chatterjee,
Medha Dandu,
Pushkar Dasika,
Rabindra Biswas,
Sarthak Das,
Kenji Watanabe,
Takashi Taniguchi,
Varun Raghunathan,
Kausik Majumdar
Abstract:
Excitonic states trapped in harmonic moiré wells of twisted heterobilayers is an intriguing testbed. However, the moiré potential is primarily governed by the twist angle, and its dynamic tuning remains a challenge. Here we demonstrate anharmonic tuning of moiré potential in a WS$_2$/WSe$_2$ heterobilayer through gate voltage and optical power. A gate voltage can result in a local in-plane perturb…
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Excitonic states trapped in harmonic moiré wells of twisted heterobilayers is an intriguing testbed. However, the moiré potential is primarily governed by the twist angle, and its dynamic tuning remains a challenge. Here we demonstrate anharmonic tuning of moiré potential in a WS$_2$/WSe$_2$ heterobilayer through gate voltage and optical power. A gate voltage can result in a local in-plane perturbing field with odd parity around the high-symmetry points. This allows us to simultaneously observe the first (linear) and second (parabolic) order Stark shift for the ground state and first excited state, respectively, of the moiré trapped exciton - an effect opposite to conventional quantum-confined Stark shift. Depending on the degree of confinement, these excitons exhibit up to twenty-fold gate-tunability in the lifetime ($100$ to $5$ ns). Also, exciton localization dependent dipolar repulsion leads to an optical power-induced blueshift of $\sim$1 meV/$μ$W - a five-fold enhancement over previous reports.
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Submitted 24 July, 2023;
originally announced July 2023.
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Tuning exciton complexes in twisted bilayer WSe2 at intermediate misorientation
Authors:
Rahul Debnath,
Shaili Sett,
Sudipta Kundu,
Rabindra Biswas,
Varun Raghunathan,
Manish Jain,
Arindam Ghosh,
Akshay Singh
Abstract:
Twist angle modifies the band alignment, screening, and interlayer (IL) coupling in twisted bilayers (tBLs) of transition metal dichalcogenides. Intermediate misorientation (twist angles > 15 degrees) bilayers (BLs) offer a unique opportunity to tune excitonic behavior within these concurrent physical mechanisms but are seldom studied. In this paper, we measure many-body excitonic complexes in mon…
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Twist angle modifies the band alignment, screening, and interlayer (IL) coupling in twisted bilayers (tBLs) of transition metal dichalcogenides. Intermediate misorientation (twist angles > 15 degrees) bilayers (BLs) offer a unique opportunity to tune excitonic behavior within these concurrent physical mechanisms but are seldom studied. In this paper, we measure many-body excitonic complexes in monolayer (ML), natural BL, and tBL WSe2. Neutral biexciton (XX) is observed in tBL, while being undetected in nonencapsulated ML and BL, demonstrating unique effects of disorder screening in tBLs. The XX as well as charged biexciton are robust to thermal dissociation and are controllable by electrostatic do**. Vanishing of momentum-indirect IL excitons with increasing electron do** is demonstrated in tBL, resulting from the near alignment of Q-K and K-K valleys. Intermediate misorientation samples offer a high degree of control of excitonic complexes while offering possibilities for studying exciton-phonon coupling, band alignment, and screening.
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Submitted 7 September, 2022;
originally announced September 2022.
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HW/SW Framework for Improving the Safety of Implantable and Wearable Medical Devices
Authors:
Malin Prematilake,
Younghyun Kim,
Vijay Raghunathan,
Anand Raghunathan,
N. K. Jha
Abstract:
Implantable and wearable medical devices (IWMDs) are widely used for the monitoring and therapy of an increasing range of medical conditions. Improvements in medical devices, enabled by advances in low-power processors, more complex firmware, and wireless connectivity, have greatly improved therapeutic outcomes and patients' quality-of-life. However, security attacks, malfunctions and sometimes us…
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Implantable and wearable medical devices (IWMDs) are widely used for the monitoring and therapy of an increasing range of medical conditions. Improvements in medical devices, enabled by advances in low-power processors, more complex firmware, and wireless connectivity, have greatly improved therapeutic outcomes and patients' quality-of-life. However, security attacks, malfunctions and sometimes user errors have raised great concerns regarding the safety of IWMDs. In this work, we present a HW/SW (Hardware/Software) framework for improving the safety of IWMDs, wherein a set of safety rules and a rule check mechanism are used to monitor both the extrinsic state (the patient's physiological parameters sensed by the IWMD) and the internal state of the IWMD (I/O activities of the microcontroller) to infer unsafe operations that may be triggered by user errors, software bugs, or security attacks. We discuss how this approach can be realized in the context of a artificial pancreas with wireless connectivity and implement a prototype to demonstrate its effectiveness in improving safety at modest overheads.
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Submitted 28 February, 2021;
originally announced March 2021.
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Origin of selective enhancement of sharp defect emission lines in monolayer WSe$_2$ on rough metal substrate
Authors:
Raghav Chaudhary,
Varun Raghunathan,
Kausik Majumdar
Abstract:
The defect states in atomically thin layers of transition metal dichalcogenides are promising candidates for single photon emission. However, the brightness of such quantum emission is often weak, and is accompanied with undesirable effects like spectral diffusion and strong background emission. By placing a monolayer WSe$_2$ directly on a rough gold substrate, here we show a selective enhancement…
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The defect states in atomically thin layers of transition metal dichalcogenides are promising candidates for single photon emission. However, the brightness of such quantum emission is often weak, and is accompanied with undesirable effects like spectral diffusion and strong background emission. By placing a monolayer WSe$_2$ directly on a rough gold substrate, here we show a selective enhancement of sharp defect-bound exciton peaks, coupled with a suppressed spectral diffusion and strong quenching of background luminescence. By combining the experimental data with detailed electromagnetic simulations, we reveal that such selective luminescence enhancement originates from a combination of the Purcell effect and a wavelength dependent increment of the excitation electric field at the tips of tall rough features, coupled with a localized strain induced exciton funneling effect. Notably, insertion of a thin hexagonal Boron Nitride (hBN) sandwich layer between WSe$_2$ and the Au film results in a strong enhancement of the background luminescence, obscuring the sharp defect peaks. The findings demonstrate a simple strategy of using monolayer WSe$_2$ supported by thin metal film that offers a possibility of achieving quantum light sources with high purity, high brightness, and suppressed spectral diffusion.
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Submitted 21 March, 2020;
originally announced March 2020.
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Valley-Coupled-Spintronic Non-Volatile Memories with Compute-In-Memory Support
Authors:
Sandeep Thirumala,
Yi-Tse Hung,
Shubham Jain,
Arnab Raha,
Niharika Thakuria,
Vijay Raghunathan,
Anand Raghunathan,
Zhihong Chen,
Sumeet Gupta
Abstract:
In this work, we propose valley-coupled spin-hall memories (VSH-MRAMs) based on monolayer WSe2. The key features of the proposed memories are (a) the ability to switch magnets with perpendicular magnetic anisotropy (PMA) via VSH effect and (b) an integrated gate that can modulate the charge/spin current (IC/IS) flow. The former attribute results in high energy efficiency (compared to the Giant-Spi…
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In this work, we propose valley-coupled spin-hall memories (VSH-MRAMs) based on monolayer WSe2. The key features of the proposed memories are (a) the ability to switch magnets with perpendicular magnetic anisotropy (PMA) via VSH effect and (b) an integrated gate that can modulate the charge/spin current (IC/IS) flow. The former attribute results in high energy efficiency (compared to the Giant-Spin Hall (GSH) effect-based devices with in-plane magnetic anisotropy (IMA) magnets). The latter feature leads to a compact access transistor-less memory array design. We experimentally measure the gate controllability of the current as well as the nonlocal resistance associated with VSH effect. Based on the measured data, we develop a simulation framework (using physical equations) to propose and analyze single-ended and differential VSH effect based magnetic memories (VSH-MRAM and DVSH-MRAM, respectively). At the array level, the proposed VSH/DVSH-MRAMs achieve 50%/ 11% lower write time, 59%/ 67% lower write energy and 35%/ 41% lower read energy at iso-sense margin, compared to single ended/differential (GSH/DGSH)-MRAMs. System level evaluation in the context of general purpose processor and intermittently-powered system shows up to 3.14X and 1.98X better energy efficiency for the proposed (D)VSH-MRAMs over (D)GSH-MRAMs respectively. Further, the differential sensing of the proposed DVSH-MRAM leads to natural and simultaneous in-memory computation of bit-wise AND and NOR logic functions. Using this feature, we design a computation-in-memory (CiM) architecture that performs Boolean logic and addition (ADD) with a single array access. System analysis performed by integrating our DVSH-MRAM: CiM in the Nios II processor across various application benchmarks shows up to 2.66X total energy savings, compared to DGSH-MRAM: CiM.
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Submitted 17 December, 2019;
originally announced December 2019.
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Strong Single- and Two-Photon Luminescence Enhancement by Nonradiative Energy Transfer across Layered Heterostructure
Authors:
Medha Dandu,
Rabindra Biswas,
Sarthak Das,
Sangeeth Kallatt,
Suman Chatterjee,
Mehak Mahajan,
Varun Raghunathan,
Kausik Majumdar
Abstract:
The strong light-matter interaction in monolayer transition metal dichalcogenides (TMDs) is promising for nanoscale optoelectronics with their direct band gap nature and the ultra-fast radiative decay of the strongly bound excitons these materials host. However, the impeded amount of light absorption imposed by the ultra-thin nature of the monolayers impairs their viability in photonic application…
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The strong light-matter interaction in monolayer transition metal dichalcogenides (TMDs) is promising for nanoscale optoelectronics with their direct band gap nature and the ultra-fast radiative decay of the strongly bound excitons these materials host. However, the impeded amount of light absorption imposed by the ultra-thin nature of the monolayers impairs their viability in photonic applications. Using a layered heterostructure of a monolayer TMD stacked on top of strongly absorbing, non-luminescent, multi-layer SnSe2, we show that both single-photon and two-photon luminescence from the TMD monolayer can be enhanced by a factor of 14 and 7.5, respectively. This is enabled through inter-layer dipole-dipole coupling induced non-radiative Forster resonance energy transfer (FRET) from SnSe2 underneath which acts as a scavenger of the light unabsorbed by the monolayer TMD. The design strategy exploits the near-resonance between the direct energy gap of SnSe2 and the excitonic gap of monolayer TMD, the smallest possible separation between donor and acceptor facilitated by van der Waals heterojunction, and the in-plane orientation of dipoles in these layered materials. The FRET driven uniform single- and twophoton luminescence enhancement over the entire junction area is advantageous over the local enhancement in quantum dot or plasmonic structure integrated 2D layers, and is promising for improving quantum efficiency in imaging, optoelectronic, and photonic applications.
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Submitted 23 May, 2019;
originally announced May 2019.
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Memory-based Combination PUFs for Device Authentication in Embedded Systems
Authors:
Soubhagya Sutar,
Arnab Raha,
Vijay Raghunathan
Abstract:
Embedded systems play a crucial role in fueling the growth of the Internet-of-Things (IoT) in application domains such as healthcare, home automation, transportation, etc. However, their increasingly network-connected nature, coupled with their ability to access potentially sensitive/confidential information, has given rise to many security and privacy concerns. An additional challenge is the grow…
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Embedded systems play a crucial role in fueling the growth of the Internet-of-Things (IoT) in application domains such as healthcare, home automation, transportation, etc. However, their increasingly network-connected nature, coupled with their ability to access potentially sensitive/confidential information, has given rise to many security and privacy concerns. An additional challenge is the growing number of counterfeit components in these devices, resulting in serious reliability and financial implications. Physically Unclonable Functions (PUFs) are a promising security primitive to help address these concerns. Memory-based PUFs are particularly attractive as they require minimal or no additional hardware for their operation. However, current memory-based PUFs utilize only a single memory technology for constructing the PUF, which has several disadvantages including making them vulnerable to security attacks. In this paper, we propose the design of a new memory-based combination PUF that intelligently combines two memory technologies, SRAM and DRAM, to overcome these shortcomings. The proposed combination PUF exhibits high entropy, supports a large number of challenge-response pairs, and is intrinsically reconfigurable. We have implemented the proposed combination PUF using a Terasic TR4-230 FPGA board and several off-the-shelf SRAMs and DRAMs. Experimental results demonstrate substantial improvements over current memory-based PUFs including the ability to resist various attacks. Extensive authentication tests across a wide temperature range (20 - 60 deg. Celsius) and accelerated aging (12 months) demonstrate the robustness of the proposed design, which achieves a 100% true-positive rate and 0% false-positive rate for authentication across these parameter ranges.
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Submitted 5 December, 2017;
originally announced December 2017.
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Phase behavior of two-component lipid membranes: theory and experiments
Authors:
Md. Arif Kamal,
Antara Pal,
V. A. Raghunathan,
Madan Rao
Abstract:
The structure of the ripple phase of phospholipid membranes remains poorly understood in spite of a large number of theoretical studies, with many experimentally established structural features of this phase unaccounted for. In this article we present a phenomenological theory of phase transitions in single- and two-component achiral lipid membranes in terms of two coupled order parameters -- a sc…
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The structure of the ripple phase of phospholipid membranes remains poorly understood in spite of a large number of theoretical studies, with many experimentally established structural features of this phase unaccounted for. In this article we present a phenomenological theory of phase transitions in single- and two-component achiral lipid membranes in terms of two coupled order parameters -- a scalar order parameter describing {\it lipid chain melting}, and a vector order parameter describing the {\it tilt of the hydrocarbon chains} below the chain-melting transition. This model reproduces all the salient structural features of the ripple phase, providing a unified description of the phase diagram and microstructure. In addition, it predicts a variant of this phase which does not seem to have been experimentally observed. Using this model we have calculated generic phase diagrams of two-component membranes. We have also determined the phase diagram of a two-component lipid membrane from x-ray diffraction studies on aligned multilayers. This phase diagram is found to be in good agreement with that calculated from the model.
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Submitted 27 March, 2012;
originally announced March 2012.
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A defect mediated lamellar to isotropic transition of amphiphile bilayers
Authors:
Antara Pal,
Georg Pabst,
V. A. Raghunathan
Abstract:
We report the observation of a novel isotropic phase of amphiphile bilayers in a mixed system consisting of the ionic surfactant, sodium docecylsulphate (SDS), and the organic salt p-toludine hydrochloride (PTHC). This system forms a collapsed lamellar ($L_α$) phase over a wide range of water content, which transforms into an isotropic phase on heating. This transition is not observed in samples w…
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We report the observation of a novel isotropic phase of amphiphile bilayers in a mixed system consisting of the ionic surfactant, sodium docecylsulphate (SDS), and the organic salt p-toludine hydrochloride (PTHC). This system forms a collapsed lamellar ($L_α$) phase over a wide range of water content, which transforms into an isotropic phase on heating. This transition is not observed in samples without excess water, where the $L_α$ phase is stable at higher temperatures. Our observations indicate that the $L_α$ - isotropic transition is driven by the unbinding of edge dislocation loops and that the isotropic phase in the present attraction-dominated system is the analogue of the sponge phase usually seen in amphiphile systems dominated by interbilayer steric repulsion.
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Submitted 25 November, 2011;
originally announced November 2011.
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Theory of the asymmetric ripple phase in achiral lipid membranes
Authors:
Md. Arif Kamal,
Antara Pal,
V. A. Raghunathan,
Madan Rao
Abstract:
We present a phenomenological theory of phase transitions in achiral lipid membranes in terms of two coupled order parameters -- a scalar order parameter describing lipid chain melting, and a vector order parameter describing the tilt of the hydrocarbon chains below the chain-melting transition. Existing theoretical models fail to account for all the observed features of the phase diagram, in part…
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We present a phenomenological theory of phase transitions in achiral lipid membranes in terms of two coupled order parameters -- a scalar order parameter describing lipid chain melting, and a vector order parameter describing the tilt of the hydrocarbon chains below the chain-melting transition. Existing theoretical models fail to account for all the observed features of the phase diagram, in particular the detailed microstructure of the asymmetric ripple phase lying between the fluid and the tilted gel phase. In contrast, our two-component theory reproduces all the salient structural features of the ripple phase, providing a unified description of the phase diagram and microstructure.
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Submitted 15 November, 2010;
originally announced November 2010.
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Demonstration of a mid infrared silicon Raman amplifier
Authors:
Varun Raghunathan,
David Borlaug,
Robert Rice,
Bahram Jalali
Abstract:
We demonstrate for the first time a mid infrared silicon Raman amplifier. Amplification of 12 dB is reported for a signal at 3.39 micron wavelength. The active medium was a 2.5 cm long silicon sample that was pumped with 5ns pulses at 2.88 micron. The absence of the nonlinear losses which severely limit the performance of silicon Raman devices in the near infrared combined with unsurpassed cryst…
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We demonstrate for the first time a mid infrared silicon Raman amplifier. Amplification of 12 dB is reported for a signal at 3.39 micron wavelength. The active medium was a 2.5 cm long silicon sample that was pumped with 5ns pulses at 2.88 micron. The absence of the nonlinear losses which severely limit the performance of silicon Raman devices in the near infrared combined with unsurpassed crystal quality, high thermal conductivity render silicon a very attractive Raman medium. Such a technology can potentially extend silicon photonics application beyond data communication in the near infrared and into the mid infrared world of remote sensing, biochemical detection and laser medicine.
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Submitted 11 August, 2007;
originally announced August 2007.
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Self-imaging silicon Raman amplifier
Authors:
Varun Raghunathan,
Hagen Renner,
Robert R. Rice,
Bahram Jalali
Abstract:
We propose a new type of waveguide optical amplifier. The device consists of collinearly propagating pump and amplified Stokes beams with periodic imaging of the Stokes beam due to the Talbot effect. The application of this device as an Image preamplifier for Mid Wave Infrared (MWIR) remote sensing is discussed and its performance is described. Silicon is the preferred material for this applicat…
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We propose a new type of waveguide optical amplifier. The device consists of collinearly propagating pump and amplified Stokes beams with periodic imaging of the Stokes beam due to the Talbot effect. The application of this device as an Image preamplifier for Mid Wave Infrared (MWIR) remote sensing is discussed and its performance is described. Silicon is the preferred material for this application in MWIR due to its excellent transmission properties, high thermal conductivity, high damage threshold and the mature fabrication technology. In these devices, the Raman amplification process also includes four-wave-mixing between various spatial modes of pump and Stokes signals. This phenomenon is unique to nonlinear interactions in multimode waveguides and places a limit on the maximum achievable gain, beyond which the image begins to distort. Another source of image distortion is the preferential amplification of Stokes modes that have the highest overlap with the pump. These effects introduce a tradeoff between the gain and image quality. We show that a possible solution to this trade-off is to restrict the pump into a single higher order waveguide mode.
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Submitted 29 November, 2006;
originally announced November 2006.
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Novel structural features of the ripple phase of phospholipids
Authors:
Kheya Sengupta,
V. A. Raghunathan,
John Katsaras
Abstract:
We have calculated the electron density maps of the ripple phase of dimyristoylphosphatidylcholine (DMPC) and palmitoyl-oleoyl phosphatidylcholine (POPC) multibilayers at different temperatures and fixed relative humidity. Our analysis establishes, for the first time, the existence of an average tilt of the hydrocarbon chains of the lipid molecules along the direction of the ripple wave vector,…
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We have calculated the electron density maps of the ripple phase of dimyristoylphosphatidylcholine (DMPC) and palmitoyl-oleoyl phosphatidylcholine (POPC) multibilayers at different temperatures and fixed relative humidity. Our analysis establishes, for the first time, the existence of an average tilt of the hydrocarbon chains of the lipid molecules along the direction of the ripple wave vector, which we believe is responsible for the occurrence of asymmetric ripples in these systems.
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Submitted 1 July, 1999;
originally announced July 1999.
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The structure of the ripple phase in chiral and racemic DMPC multibilayers
Authors:
Kheya Sengupta,
V. A. Raghunathan,
John Katsaras
Abstract:
We present electron density maps of the ripple phase of chiral and racemic dimyristoylphosphatidylcholine. The structures of the two systems are found to be identical within experimental errors, thus unambiguously showing that the chirality of the lipid molecules does not influence the structure of this phase.
We present electron density maps of the ripple phase of chiral and racemic dimyristoylphosphatidylcholine. The structures of the two systems are found to be identical within experimental errors, thus unambiguously showing that the chirality of the lipid molecules does not influence the structure of this phase.
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Submitted 26 November, 1998;
originally announced November 1998.
