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Showing 1–3 of 3 results for author: Rae, K J

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  1. arXiv:2011.14837  [pdf

    physics.app-ph cond-mat.mtrl-sci physics.optics

    Void Engineering in Epitaxially Regrown GaAs-Based Photonic Crystal Surface Emitting Lasers by Grating Profile Design

    Authors: Adam F. McKenzie, Ben C. King, Katherine J. Rae, Stephen Thoms, Neil D. Gerrard, Jonathan Orchard, Kenishi Nishi, Keizo Takemasa, Mitsuru Sugawara, Richard J. E. Taylor, David T. D. Childs, Donald A. McLaren, Richard A. Hogg

    Abstract: We report the engineering of air-voids embedded in GaAs-based photonic crystal surface emitting lasers realised by metalorganic vapour-phase epitaxy regrowth. Two distinct void geometries are obtained by modifying the photonic crystal grating profile within the reactor prior to regrowth. The mechanism of void formation is inferred from scanning transmission electron microscopy analysis, with the e… ▽ More

    Submitted 9 November, 2020; originally announced November 2020.

    Comments: 7 pages, 4 figures

  2. arXiv:2011.04534  [pdf

    physics.optics physics.app-ph

    Coherent Power Scaling in Photonic Crystal Surface Emitting Laser Arrays

    Authors: Ben C. King, Katherine J. Rae, Adam F. McKenzie, Aleksander Boldin, Daehyun Kim, Neil D. Gerrard, Guangrui Li, Kenishi Nishi, Mitsuru Sugawara, Richard J. E. Taylor, David T. D. Childs, Richard A. Hogg

    Abstract: A key benefit of photonic crystal surface emitting lasers (PCSELs) is the abillity to increase output power through scaling the emission area while mainting high quality single mode emission, allowing them to close the brightness gap which exists between semiconductor lasers and gas and fibre lasers. However, there are practical limits to the size, and hence power, of an individual PCSEL device an… ▽ More

    Submitted 9 November, 2020; originally announced November 2020.

    Comments: Paper submitted. 9 pages, 4 figures

  3. arXiv:2010.09306  [pdf

    physics.optics physics.app-ph

    1.5 μm Epitaxially Regrown Photonic Crystal Surface Emitting Laser Diode

    Authors: Zijun Bian, Katherine J. Rae, Adam F. McKenzie, Ben C. King, Nasser Babazadeh, Guangrui Li, Jonathan R. Orchard, Neil D. Gerrard, Stephen Thoms, Donald A. McLaren, Richard J. E. Taylor, David Childs, Richard A. Hogg

    Abstract: We present an InP-based epitaxially regrown photonic crystal surface emitting laser diode, lasing in quasi- CW conditions at 1523nm.

    Submitted 19 October, 2020; originally announced October 2020.

    Comments: 4 pages, 5 figures, journal submission for review