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Spin-canting effects in GMR sensors with wide dynamic field range
Authors:
Clemens Muehlenhoff,
Christoph Vogler,
Wolfgang Raberg,
Dieter Suess,
Manfred Albrecht
Abstract:
Magnetoresistive (xMR) sensors find extensive application in science and industry, replacing Hall sensors in various low field environments. While there have been some efforts in increasing the dynamic field range of xMR sensors, Hall sensors remain to dominate high field applications due to their wide linear range. Using a perpendicular magnetized reference system and an in-plane free layer allow…
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Magnetoresistive (xMR) sensors find extensive application in science and industry, replacing Hall sensors in various low field environments. While there have been some efforts in increasing the dynamic field range of xMR sensors, Hall sensors remain to dominate high field applications due to their wide linear range. Using a perpendicular magnetized reference system and an in-plane free layer allows us to overcome this disadvantage of xMR sensors, and, furthermore, investigate spin-canting effects in interlayer exchange coupled perpendicular synthetic antiferromagnets (p-SAF). We created p-SAFs with exchange coupling fields of up to 10 kOe, based on magnetic Co/Pt multilayer systems. The p-SAFs are either designed as "single" p-SAFs, where two Co/Pt multilayers are interlayer exchange coupled via a 4 Å thick Ru spacer, or as "double" p-SAFs, where an additional Co layer is interlayer exchange coupled to the top multilayer. These p-SAFs are used for giant magnetoresistance (GMR) sensors with wide dynamic field range. By using a p-SAF as the reference system and employing an in-plane magnetic layer as the GMR's free layer, the linear range can be effectively increased limited only by the p-SAF's switching fields. Additionally, the magnetic anisotropy of the in-plane free layer is fully controlled, which allows saturation fields by design. Different configurations were investigated, ranging from free layer magnetic saturation at lower to far higher fields than the p-SAF's switching fields. We can show through micromagnetic simulations that certain GMR transfer curves are dominated by spin-canting effects in the interlayer exchange coupled reference system. Finally, our simulation results lay out the correlation of the p-SAF's design parameters and its magnetization reversal behavior.
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Submitted 6 July, 2020;
originally announced July 2020.
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Opportunities and challenges for spintronics in the microelectronic industry
Authors:
Bernard Dieny,
Ioan Lucian Prejbeanu,
Kevin Garello,
Pietro Gambardella,
Paulo Freitas,
Ronald Lehndorff,
Wolfgang Raberg,
Ursula Ebels,
Sergej O Demokritov,
Johan Akerman,
Alina Deac,
Philipp Pirro,
Christoph Adelmann,
Abdelmadjid Anane,
Andrii V Chumak,
Atsufumi Hiroata,
Stephane Mangin,
Mehmet Cengiz Onbasli,
Massimo d Aquino,
Guillaume Prenat,
Giovanni Finocchio,
Luis Lopez Diaz,
Roy Chantrell,
Oksana Chubykalo Fesenko,
Paolo Bortolotti
Abstract:
Spin-based electronics has evolved into a major field of research that broadly encompasses different classes of materials, magnetic systems, and devices. This review describes recent advances in spintronics that have the potential to impact key areas of information technology and microelectronics. We identify four main axes of research: nonvolatile memories, magnetic sensors, microwave devices, an…
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Spin-based electronics has evolved into a major field of research that broadly encompasses different classes of materials, magnetic systems, and devices. This review describes recent advances in spintronics that have the potential to impact key areas of information technology and microelectronics. We identify four main axes of research: nonvolatile memories, magnetic sensors, microwave devices, and beyond-CMOS logic. We discuss state-of-the-art developments in these areas as well as opportunities and challenges that will have to be met, both at the device and system level, in order to integrate novel spintronic functionalities and materials in mainstream microelectronic platforms.
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Submitted 28 August, 2019;
originally announced August 2019.
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Comparison of Sensitivity and Low Frequency Noise Contributions in GMR and TMR Spin Valve Sensors with a Vortex State Free Layer
Authors:
Herbert Weitensfelder,
Hubert Brueckl,
Armin Satz,
Klemens Pruegl,
Juergen Zimmer,
Sebastian Luber,
Wolfgang Raberg,
Claas Abert,
Florian Bruckner,
Anton Bachleitner-Hofmann,
Roman Windl,
Dieter Suess
Abstract:
Magnetoresistive spin valve sensors based on the giant- (GMR) and tunnelling- (TMR) magnetoresisitve effect with a flux-closed vortex state free layer design are compared by means of sensitivity and low frequency noise. The vortex state free layer enables high saturation fields with negligible hysteresis, making it attractive for applications with a high dynamic range. The measured GMR devices com…
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Magnetoresistive spin valve sensors based on the giant- (GMR) and tunnelling- (TMR) magnetoresisitve effect with a flux-closed vortex state free layer design are compared by means of sensitivity and low frequency noise. The vortex state free layer enables high saturation fields with negligible hysteresis, making it attractive for applications with a high dynamic range. The measured GMR devices comprise lower pink noise and better linearity in resistance but are less sensitive to external magnetic fields than TMR sensors. The results show a comparable detectivity at low frequencies and a better performance of the TMR minimum detectable field at frequencies in the white noise limit.
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Submitted 18 April, 2018;
originally announced April 2018.
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Topologically Protected Vortex Structures to Realize Low-Noise Magnetic Sensors
Authors:
Dieter Suess,
Anton Bachleitner-Hofmann,
Armin Satz,
Herbert Weitensfelder,
Christoph Vogler,
Florian Bruckner,
Claas Abert,
Klemens Prügl,
Jürgen Zimmer,
Christian Huber,
Sebastian Luber,
Wolfgang Raberg,
Thomas Schrefl,
Hubert Brückl
Abstract:
Micromagnetic sensors play a major role towards the miniaturization in the industrial society. The adoption of new and emerging sensor technologies like anisotropic magnetoresistance (AMR), giant magnetoresistance (GMR) and tunnel magnetoresistance (TMR) sensors are mainly driven by their integrability and enhanced sensitivity. At the core of such sensors, a microstructured ferromagnetic thin film…
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Micromagnetic sensors play a major role towards the miniaturization in the industrial society. The adoption of new and emerging sensor technologies like anisotropic magnetoresistance (AMR), giant magnetoresistance (GMR) and tunnel magnetoresistance (TMR) sensors are mainly driven by their integrability and enhanced sensitivity. At the core of such sensors, a microstructured ferromagnetic thin film element transduces the magnetic signal. Such elements usually switch via multi-domain, C- or S-shaped magnetization states and, therefore, often exhibit an open non-linear hysteresis curve. Linearity and hysteretic effects, as well as magnetic noise are key features in the improvement of such sensors. Here, we report on the physical origin of these disturbing factors and the inherent connection of noise and hysteresis. Critical noise sources are identified by means of analytic and micromagnetic models. The dominant noise source is due to irreproducible magnetic switching of the transducer element at external fields close to the Stoner Wohlfarth switching field. Furthermore, a solution is presented to overcome these limiting factors: a disruptive sensor design is proposed and analyzed which realizes a topologically protected magnetic vortex state in the transducer element. Compared to state of the art sensors the proposed sensor layout has negligible hysteresis, a linear regime about an order of magnitude higher and lower magnetic noise making the sensor ideal candidate for applications ranging from automotive industry to biological application.
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Submitted 19 December, 2017;
originally announced December 2017.
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Considering non-uniform current distributions in magnetoresistive sensor designs and their implications for the resistance transfer function
Authors:
Anton Bachleitner-Hofmann,
Claas Abert,
Hubert Brückl,
Armin Satz,
Tobias Wurft,
Wolfgang Raberg,
Clemens Prügl,
Dieter Suess
Abstract:
Non-uniform current distributions of spin valves with disk shaped free layers are investigated. In the context of spin valves, the vortex state, which is the ground-state in many disk shaped magnetic bodies, allows for distinct parallel channels of high and low resistivity. The readout current is thus able to evade high resistivity regions in favor of low resistivity regions, giving rise to 'condu…
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Non-uniform current distributions of spin valves with disk shaped free layers are investigated. In the context of spin valves, the vortex state, which is the ground-state in many disk shaped magnetic bodies, allows for distinct parallel channels of high and low resistivity. The readout current is thus able to evade high resistivity regions in favor of low resistivity regions, giving rise to 'conductive inhomogeneities'. Therefore, the total resistance of the spin valve does not always correspond exactly to the total average magnetization of the free layer. In addition, the resistance transfer function can be significantly influenced by the spatial placement of the electrodes, giving rise to 'geometric inhomogeneities'. The resulting deviations from resistance to magnetization transfer function are investigated for different spin valve geometries and compared to measurements of comparable devices.
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Submitted 19 September, 2017;
originally announced September 2017.
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Diffusion based degradation mechanisms in giant magnetoresistive spin valves
Authors:
M. Hawraneck,
J. Zimmer,
W. Raberg,
K. Pruegl,
S. Schmitt,
T. Bever,
S. Flege,
L. Alff
Abstract:
Spin valve systems based on the giant magnetoresistive (GMR) effect as used for example in hard disks and automotive applications consist of several functional metallic thin film layers. We have identified by secondary ion mass spectrometry (SIMS) two main degradation mechanisms: One is related to oxygen diffusion through a protective cap layer, and the other one is interdiffusion directly at th…
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Spin valve systems based on the giant magnetoresistive (GMR) effect as used for example in hard disks and automotive applications consist of several functional metallic thin film layers. We have identified by secondary ion mass spectrometry (SIMS) two main degradation mechanisms: One is related to oxygen diffusion through a protective cap layer, and the other one is interdiffusion directly at the functional layers of the GMR stack. By choosing a suitable material as cap layer (TaN), the oxidation effect can be suppressed.
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Submitted 18 June, 2008;
originally announced June 2008.
