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Unveiling the atomic structure of single-wall boron nanotubes
Authors:
Jens Kunstmann,
Viktor Bezugly,
Hauke Rabbel,
Mark H. Rümmeli,
Gianaurelio Cuniberti
Abstract:
Despite recent successes in the synthesis of boron nanotubes (BNTs), the atomic arrangement of their walls has not yet been determined and many questions about their basic properties do remain. Here, we unveil the dynamical stability of BNTs by means of first-principles molecular dynamics simulations. We find that free-standing, single-wall BNTs with diameters larger than 0.6 nm are thermally stab…
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Despite recent successes in the synthesis of boron nanotubes (BNTs), the atomic arrangement of their walls has not yet been determined and many questions about their basic properties do remain. Here, we unveil the dynamical stability of BNTs by means of first-principles molecular dynamics simulations. We find that free-standing, single-wall BNTs with diameters larger than 0.6 nm are thermally stable at the experimentally reported synthesis temperature of 870$^\circ$C and higher. The walls of thermally stable BNTs are found to have a variety of different mixed triangular-hexagonal morphologies. Our results substantiate the importance of mixed triangular-hexagonal morphologies as a structural paradigm for atomically thin boron.
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Submitted 17 April, 2014;
originally announced April 2014.
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Stabilization of carbon nanotubes by filling with inner tubes: An optical spectroscopy study on double-walled carbon nanotubes under hydrostatic pressure
Authors:
B. Anis,
K. Haubner,
F. Börrnert,
L. Dunsch,
M. H. Rümmeli,
C. A. Kuntscher
Abstract:
The stabilization of carbon nanotubes via the filling with inner tubes is demonstrated by probing the optical transitions in double-walled carbon nanotube bundles under hydrostatic pressure with optical spectroscopy. Double-walled carbon nanotube films were prepared from fullerene peapods and characterized by HRTEM and optical spectroscopy. In comparison to single-walled carbon nanotubes, the pres…
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The stabilization of carbon nanotubes via the filling with inner tubes is demonstrated by probing the optical transitions in double-walled carbon nanotube bundles under hydrostatic pressure with optical spectroscopy. Double-walled carbon nanotube films were prepared from fullerene peapods and characterized by HRTEM and optical spectroscopy. In comparison to single-walled carbon nanotubes, the pressure-induced redshifts of the optical transitions in the outer tubes are significantly smaller below $\sim$10 GPa, demonstrating the enhanced mechanical stability due to the inner tube already at low pressures. Anomalies at the critical pressure P$_d$$\approx$12 GPa signal the onset of the pressure-induced deformation of the tubular cross-sections. The value of P$_d$ is in very good agreement with theoretical predictions of the pressure-induced structural transitions in double-walled carbon nanotube bundles with similar average diameters.
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Submitted 18 October, 2012;
originally announced October 2012.
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Lattice Expansion in Seamless Bi layer Graphene Constrictions at High Bias
Authors:
Felix Boerrnert,
Amelia Barreiro,
Daniel Wolf,
Mikhail I. Katsnelson,
Bernd Buechner,
Lieven M. K. Vandersypen,
Mark H. Ruemmeli
Abstract:
Our understanding of sp2 carbon nanostructures is still emerging and is important for the development of high performance all carbon devices. For example, in terms of the structural behavior of graphene or bi-layer graphene at high bias, little to nothing is known. To this end we investigated bi-layer graphene constrictions with closed edges (seamless) at high bias using in situ atomic resolution…
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Our understanding of sp2 carbon nanostructures is still emerging and is important for the development of high performance all carbon devices. For example, in terms of the structural behavior of graphene or bi-layer graphene at high bias, little to nothing is known. To this end we investigated bi-layer graphene constrictions with closed edges (seamless) at high bias using in situ atomic resolution transmission electron microscopy. We directly observe a highly localized anomalously large lattice expansion inside the constriction. Both the current density and lattice expansion increase as the bi-layer graphene constriction narrows. As the constriction width decreases below 10 nm, shortly before failure, the current density rises to 4 \cdot 109 A cm-2 and the constriction exhibits a lattice expansion with a uniaxial component showing an expansion approaching 5 % and an isotropic component showing an expansion exceeding 1 %. The origin of the lattice expansion is hard to fully ascribe to thermal expansion. Impact ionization is a process in which charge carriers transfer from bonding states to antibonding states thus weakening bonds. The altered character of C-C bonds by impact ionization could explain the anomalously large lattice expansion we observe in seamless bi-layer graphene constrictions. Moreover, impact ionization might also contribute to the observed anisotropy in the lattice expansion, although strain is probably the predominant factor.
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Submitted 10 August, 2012;
originally announced August 2012.
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Indirect Exchange Interaction in Fully Metal-Semiconductor Separated SWCNTs Revealed by ESR
Authors:
M. Havlicek,
W. Jantsch,
Z. Wilamowski,
K. Yanagi,
H. Kataura,
M. H. Rummeli,
H. Malissa,
A. Tyryshkin,
S. Lyon,
A. Chernov,
H. Kuzmany
Abstract:
The ESR response from highly metal-semiconductor(M-SC) separated SWCNTs for temperatures T between 0.39 and 200 K is characteristically different for the two systems. The signal originates from defect spins but interaction with free electrons leads to a larger line width for M tubes. The latter decreases with increasing T whereas it increases with T for SC tubes. The spins undergo a ferromagnetic…
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The ESR response from highly metal-semiconductor(M-SC) separated SWCNTs for temperatures T between 0.39 and 200 K is characteristically different for the two systems. The signal originates from defect spins but interaction with free electrons leads to a larger line width for M tubes. The latter decreases with increasing T whereas it increases with T for SC tubes. The spins undergo a ferromagnetic phase transition below around 10 K. Indirect exchange is suggested to be responsible for the spin-spin interaction, supported by RKKY interaction in the case of M tubes. For SC tubes spin-lattice relaxation via an Orbach process is suggested to determine the line width.
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Submitted 20 June, 2012;
originally announced June 2012.
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Graphene at high bias: cracking, layer by layer sublimation and fusing
Authors:
Amelia Barreiro,
Felix Boerrnert,
Mark H. Ruemmeli,
Bernd Buechner,
Lieven M. K. Vandersypen
Abstract:
Graphene and few-layer graphene at high bias expose a wealth of phenomena due to the high temperatures reached. With in-situ transmission electron microscopy (TEM) we observe directly how the current modifies the structure, and vice versa. In some samples, cracks propagate from the edges of the flakes, leading to the formation of narrow constrictions or to nanometer spaced gaps after breakdown. In…
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Graphene and few-layer graphene at high bias expose a wealth of phenomena due to the high temperatures reached. With in-situ transmission electron microscopy (TEM) we observe directly how the current modifies the structure, and vice versa. In some samples, cracks propagate from the edges of the flakes, leading to the formation of narrow constrictions or to nanometer spaced gaps after breakdown. In other samples we find layer-by-layer evaporation of few-layer graphene, which could be exploited for the controlled production of single layer graphene from multi-layered samples. Surprisingly, we even find that two pieces of graphene that overlap can heal out at high bias and form one continuous sheet. These findings open up new avenues to structure graphene for specific device applications.
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Submitted 14 March, 2012;
originally announced March 2012.
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Understanding the catalyst-free transformation of amorphous carbon into graphene by current-induced annealing
Authors:
Amelia Barreiro,
Felix Boerrnert,
Stanislav M. Avdoshenko,
Bernd Rellinghaus,
Gianaurelio Cuniberti,
Mark H. Ruemmeli,
Lieven M. K. Vandersypen
Abstract:
We shed light on the catalyst-free growth of graphene from amorphous carbon (a-C) by current-induced annealing by witnessing the mechanism both with in-situ transmission electron microscopy and with molecular dynamics simulations. Both in experiment and in simulation, we observe that small a-C clusters on top of a graphene substrate rearrange and crystallize into graphene patches. The process is a…
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We shed light on the catalyst-free growth of graphene from amorphous carbon (a-C) by current-induced annealing by witnessing the mechanism both with in-situ transmission electron microscopy and with molecular dynamics simulations. Both in experiment and in simulation, we observe that small a-C clusters on top of a graphene substrate rearrange and crystallize into graphene patches. The process is aided by the high temperatures involved and by the van der Waals interactions with the substrate. Furthermore, in the presence of a-C, graphene can grow from the borders of holes and form a seamless graphene sheet, a novel finding that has not been reported before and that is reproduced by the simulations as well. These findings open up new avenues for bottom-up engineering of graphene-based devices.
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Submitted 21 November, 2012; v1 submitted 15 January, 2012;
originally announced January 2012.
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Graphene: Piecing it together
Authors:
Mark H. Rümmeli,
Claudia G. Rocha,
Frank Ortmann,
Imad Ibrahim,
Haldun Sevincli,
Felix Börrnert,
Jens Kunstmann,
Alicja Bachmatiuk,
Markus Pötsche,
Masashi Shiraishi,
Meyya Meyyappan,
Bernd Büchner,
Stephan Roche,
Gianaurelio Cuniberti
Abstract:
Graphene has a multitude of striking properties that make it an exceedingly attractive material for various applications, many of which will emerge over the next decade. However, one of the most promising applications lie in exploiting its peculiar electronic properties which are governed by its electrons obeying a linear dispersion relation. This leads to the observation of half integer quantum h…
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Graphene has a multitude of striking properties that make it an exceedingly attractive material for various applications, many of which will emerge over the next decade. However, one of the most promising applications lie in exploiting its peculiar electronic properties which are governed by its electrons obeying a linear dispersion relation. This leads to the observation of half integer quantum hall effect and the absence of localization. The latter is attractive for graphene-based field effect transistors. However, if graphene is to be the material for future electronics, then significant hurdles need to be surmounted, namely, it needs to be mass produced in an economically viable manner and be of high crystalline quality with no or virtually no defects or grains boundaries. Moreover, it will need to be processable with atomic precision. Hence, the future of graphene as a material for electronic based devices will depend heavily on our ability to piece graphene together as a single crystal and define its edges with atomic precision. In this progress report, the properties of graphene that make it so attractive as a material for electronics is introduced to the reader. The focus then centers on current synthesis strategies for graphene and their weaknesses in terms of electronics applications are highlighted.
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Submitted 3 August, 2011;
originally announced August 2011.
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Direct Low Temperature Nano-Graphene Synthesis over a Dielectric Insulator
Authors:
Mark H. Rümmeli,
Alicja Bachmatiuk,
Andrew Scott,
Felix Börrnert,
Jamie H. Warner,
Volker Hoffmann,
Jarrn-Horng Lin,
Gianaurelio Cuniberti,
Bernd Büchner
Abstract:
Graphene ranks highly as a possible material for future high-speed and flexible electronics. Current fabrication routes, which rely on metal substrates, require post synthesis transfer of the graphene onto a Si wafer or in the case of epitaxial growth on SiC, temperatures above 1000 °C are required. Both the handling difficulty and high temperatures are not best suited to present day silicon techn…
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Graphene ranks highly as a possible material for future high-speed and flexible electronics. Current fabrication routes, which rely on metal substrates, require post synthesis transfer of the graphene onto a Si wafer or in the case of epitaxial growth on SiC, temperatures above 1000 °C are required. Both the handling difficulty and high temperatures are not best suited to present day silicon technology. We report a facile chemical vapor deposition approach in which nano-graphene and few layer graphene is directly formed over magnesium oxide and can be achieved at temperatures as low as 325 °C.
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Submitted 2 March, 2011;
originally announced March 2011.
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The catalytic potential of high-k dielectrics for graphene formation
Authors:
Andrew Scott,
Arezoo Dianat,
Felix Börrnert,
Alicja Bachmatiuk,
Shasha Zhang,
Jamie H. Warner,
Ewa Borowiak-Palen,
Martin Knupfer,
Bernd Büchner,
Gianaurelio Cuniberti,
Mark H. Rümmeli
Abstract:
The growth of single and multilayer graphene nano-flakes on MgO and ZrO2 at low temperatures is shown through transmission electron microscopy. The graphene nano-flakes are ubiquitously anchored at step edges on MgO (100) surfaces. Density functional theory investigations on MgO (100) indicate C2H2 decomposition and carbon adsorption at step-edges. Hence, both the experimental and theoretical data…
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The growth of single and multilayer graphene nano-flakes on MgO and ZrO2 at low temperatures is shown through transmission electron microscopy. The graphene nano-flakes are ubiquitously anchored at step edges on MgO (100) surfaces. Density functional theory investigations on MgO (100) indicate C2H2 decomposition and carbon adsorption at step-edges. Hence, both the experimental and theoretical data highlight the importance of step sites for graphene growth on MgO.
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Submitted 25 February, 2011;
originally announced February 2011.
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Incidence of the Tomonaga-Luttinger liquid state on the NMR spin lattice relaxation in Carbon Nanotubes
Authors:
Y. Ihara,
P. Wzietek,
H. Alloul,
M. H. Rümmeli,
Th. Pichler,
F. Simon
Abstract:
We report 13C nuclear magnetic resonance measurements on single wall carbon nanotube (SWCNT) bundles. The temperature dependence of the nuclear spin-lattice relaxation rate, 1/T1, exhibits a power-law variation, as expected for a Tomonage-Luttinger liquid (TLL). The observed exponent is smaller than that expected for the two band TLL model. A departure from the power law is observed only at low…
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We report 13C nuclear magnetic resonance measurements on single wall carbon nanotube (SWCNT) bundles. The temperature dependence of the nuclear spin-lattice relaxation rate, 1/T1, exhibits a power-law variation, as expected for a Tomonage-Luttinger liquid (TLL). The observed exponent is smaller than that expected for the two band TLL model. A departure from the power law is observed only at low T, where thermal and electronic Zeeman energy merge. Extrapolation to zero magnetic field indicates gapless spin excitations. The wide T range on which power-law behavior is observed suggests that SWCNT is so far the best realization of a one-dimensional quantum metal.
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Submitted 10 May, 2010; v1 submitted 6 October, 2009;
originally announced October 2009.
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Linear plasmon dispersion in single-wall carbon nanotubes and the collective excitation spectrum of graphene
Authors:
C. Kramberger,
R. Hambach,
C. Giorgetti,
M. H. Rummeli,
M. Knupfer,
J. Fink,
B. Buchner,
L. Reining,
E. Einarsson,
S. Maruyama,
F. Sottile,
K. Hannewald,
V. Olevano,
A. G. Marinopoulos,
T. Pichler
Abstract:
We have measured a strictly linear pi-plasmon dispersion along the axis of individualized single wall carbon nanotubes, which is completely different from plasmon dispersions of graphite or bundled single wall carbon nanotubes. Comparative ab initio studies on graphene based systems allow us to reproduce the different dispersions. This suggests that individualized nanotubes provide viable experi…
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We have measured a strictly linear pi-plasmon dispersion along the axis of individualized single wall carbon nanotubes, which is completely different from plasmon dispersions of graphite or bundled single wall carbon nanotubes. Comparative ab initio studies on graphene based systems allow us to reproduce the different dispersions. This suggests that individualized nanotubes provide viable experimental access to collective electronic excitations of graphene, and it validates the use of graphene to understand electronic excitations of carbon nanotubes. In particular, the calculations reveal that local field effects (LFE) cause a mixing of electronic transitions, including the 'Dirac cone', resulting in the observed linear dispersion.
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Submitted 4 February, 2008;
originally announced February 2008.
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Minimal bundling of single-walled carbon nanotubes comprising vertically aligned films
Authors:
Erik Einarsson,
Hidetsugu Shiozawa,
Christian Kramberger,
Mark H. Rummeli,
Alexander Gruneis,
Thomas Pichler,
Shigeo Maruyama
Abstract:
A freestanding film of vertically aligned single-walled carbon nanotubes (VA-SWNTs) synthesized by the alcohol catalytic chemical vapor deposition (ACCVD) method was observed directly by transmission electron microscopy (TEM). These observations revealed that the film is comprised primarily of small SWNT bundles, typically containing 3-8 SWNTs. The lack of significant bundling is supported by el…
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A freestanding film of vertically aligned single-walled carbon nanotubes (VA-SWNTs) synthesized by the alcohol catalytic chemical vapor deposition (ACCVD) method was observed directly by transmission electron microscopy (TEM). These observations revealed that the film is comprised primarily of small SWNT bundles, typically containing 3-8 SWNTs. The lack of significant bundling is supported by electron diffraction spectra, in which no bundle peak is observed, and by electron energy-loss spectroscopy (EELS), which shows minimal dielectric screening. This indicates the electrical properties of the VA-SWNT film are dominated by the one-dimensional nature of SWNTs, rather than behaving as a bulk material.
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Submitted 27 February, 2007;
originally announced February 2007.
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On the formation process of silicon carbide nanophases via hydrogenated thermally induced templated synthesis
Authors:
Mark. H. Ruemmeli,
Ewa Borowiak-Palen,
Thomas Gemming,
Martin Knupfer,
Kati Biedermann,
Ryszard J. Kalenczuk,
Thomas Pichler
Abstract:
A thermally induced templated synthesis for SiC nanotubes and nanofibers using ammonia or nitrogen as a carrier gas, single wall carbon nanotubes (SWCNT) as templates as well as gaseous Si is presented. The bundles of SWCNT act as both the carbon source and as a nanoframe from which SiC structuctures form. Depending on the duration of the thermally induced templated reaction, for a fixed tempera…
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A thermally induced templated synthesis for SiC nanotubes and nanofibers using ammonia or nitrogen as a carrier gas, single wall carbon nanotubes (SWCNT) as templates as well as gaseous Si is presented. The bundles of SWCNT act as both the carbon source and as a nanoframe from which SiC structuctures form. Depending on the duration of the thermally induced templated reaction, for a fixed temperature, carrier gas, and gas pressure, various SiC nanostructures are obtained. These structures include SiC nanorods coated in C, SiC nanorods, SiC nanotubes, and SiC nanocrytals. From our analysis using transmission electron microscopy (TEM) and scanning electron microscopy (SEM), electron energy-loss spectroscopy (EELS), electron diffraction (EDX), optical absorption spectroscopy and Raman spectroscopy as probes we prove that H has a key role on the morphology and stochiometry of the different SiC nanostructures.
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Submitted 23 April, 2004;
originally announced April 2004.