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The Validity Window of Space-Charge-Limited Current Measurements of Metal Halide Perovskite Devices
Authors:
William R. Fisher,
Philip Calado,
Jason A. Röhr,
Joel A. Smith,
Xingyuan Shi,
Onkar Game,
Jenny Nelson,
Piers R. F. Barnes
Abstract:
Space-charge-limited current (SCLC) measurements are used to estimate charge carrier mobilities and electronic trap densities of semiconductors by analysing the current density-voltage (JV) relationship for unipolar devices predicted by the Mott-Gurney (MG) law. However, the interpretation of SCLC measurements for metal-halide perovskites is problematic due to mobile ionic defects which redistribu…
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Space-charge-limited current (SCLC) measurements are used to estimate charge carrier mobilities and electronic trap densities of semiconductors by analysing the current density-voltage (JV) relationship for unipolar devices predicted by the Mott-Gurney (MG) law. However, the interpretation of SCLC measurements for metal-halide perovskites is problematic due to mobile ionic defects which redistribute to screen electrostatic fields in devices during measurements. To overcome this, an SCLC measurement protocol was recently suggested that minimises ionic charge redistribution by probing the current during millisecond voltage pulses superimposed on a background bias. Here, we use drift-diffusion simulations with mobile ions to assess the validity of the MG law for analysing both the standard and new protocol JV measurements. We simulated idealised perovskite devices with differing mobile ion densities and compared them with simulations and measurements of devices with typical contact materials. We found the validity region for the MG law is limited to perovskites with mobile ion densities lower than the device's equilibrium charge carrier density (<10^17 cm-3 for 400 nm thick methylammonium lead iodide films) and contacts with injection/extraction barriers <=0.1 eV. The latter limitation can be partially overcome by increasing the device thickness, whereas the former limitation cannot. This restricts the range of perovskite layer compositions and viable contact materials that can be reliably analysed with the MG law. Approaches such as estimating trap densities from the apparent voltage onset to trap-free SCLC regime should also be critically reviewed since they rely on the same potentially invalid assumptions as the MG law. Our results demonstrate that extracting meaningful and accurate values for metal halide perovskite material properties from SCLC maybe challenging, or often not possible.
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Submitted 1 April, 2022;
originally announced April 2022.
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On Injection in Intrinsic Single-Carrier Devices
Authors:
Jason A. Röhr
Abstract:
By considering the changes in the interface charge-carrier densities of a single-carrier device as a function of injection-barrier heights and comparing these to the equilibrium, background charge-carrier density of a device with Ohmic contacts, we calculate simple conditions for when these barriers are expected to limit injection and therefore significantly affect space-charge-limited currents in…
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By considering the changes in the interface charge-carrier densities of a single-carrier device as a function of injection-barrier heights and comparing these to the equilibrium, background charge-carrier density of a device with Ohmic contacts, we calculate simple conditions for when these barriers are expected to limit injection and therefore significantly affect space-charge-limited currents in the device. We show that these conditions depend on the device temperature, semiconductor relative permittivity, and effective density of states, but most importantly the thickness of the semiconducting film being probed. This is in accordance with previous observations and similar derived expressions for when defects influence single-carrier devices. The conditions described herein can be used to aid the design of single-carrier devices for space-charge-limited current measurements that are not limited by injection.
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Submitted 24 October, 2022; v1 submitted 10 January, 2022;
originally announced January 2022.
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Identifying optimal photovoltaic technologies for underwater applications
Authors:
Jason A. Röhr,
Ed Sartor,
Joel N. Duenow,
Zilun Qin,
Juan Meng,
Jason Lipton,
Stephen A. Maclean,
Udo Römer,
Michael P. Nielsen,
Suling Zhao,
Jaemin Kong,
Matthew O. Reese,
Myles A. Steiner,
N. J. Ekins-Daukes,
André D. Taylor
Abstract:
Improving solar energy collection in aquatic environments would allow for superior environmental monitoring and remote sensing, but the identification of optimal photovoltaic technologies for such applications is challenging as evaluation requires either field deployment or access to large water tanks. Here, we present a simple bench-top characterization technique that does not require direct acce…
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Improving solar energy collection in aquatic environments would allow for superior environmental monitoring and remote sensing, but the identification of optimal photovoltaic technologies for such applications is challenging as evaluation requires either field deployment or access to large water tanks. Here, we present a simple bench-top characterization technique that does not require direct access to water and therefore circumvents the need for field testing during initial trials of development. Employing LEDs to simulate underwater solar spectra at various depths, we compare Si and CdTe solar cells, two commercially available technologies, with GaInP cells, a technology with a wide band gap close to ideal for underwater solar harvesting. We use this method to show that while Si cells outperform both CdTe and GaInP under terrestrial AM1.5G solar irradiance, both CdTe and GaInP outperform Si at depths > 2 m, with GaInP cells operating with underwater efficiencies exceeding 51%.
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Submitted 1 June, 2022; v1 submitted 24 October, 2021;
originally announced October 2021.
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Analytical Description of Mixed Ohmic and Space-Charge-Limited Conduction in Single-Carrier Devices
Authors:
Jason A. Röhr,
Roderick C. I. MacKenzie
Abstract:
While space-charge-limited current measurements are often used to characterize charge-transport in relatively intrinsic, low-mobility semiconductors, it is currently difficult to characterize lightly or heavily doped semiconductors with this method. By combining the theories describing ohmic and space-charge-limited conduction, we derive a general analytical approach to extract the charge-carrier…
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While space-charge-limited current measurements are often used to characterize charge-transport in relatively intrinsic, low-mobility semiconductors, it is currently difficult to characterize lightly or heavily doped semiconductors with this method. By combining the theories describing ohmic and space-charge-limited conduction, we derive a general analytical approach to extract the charge-carrier density, the conduction-band edge and the drift components of the current density-voltage curves of a single-carrier device when the semiconductor is either undoped, lightly doped or heavily doped. The presented model covers the entire voltage range, i.e., both the low-voltage regime and the Mott-Gurney regime. We demonstrate that there is an upper limit to how doped a device must be before the current density-voltage curves are significantly affected, and we show that the background charge-carrier density must be considered to accurately model the drift component in the low-voltage regime, regardless of whether the device is doped or not. We expect that the final analytical expressions presented herein to be directly useful to experimentalists studying charge transport in novel materials and devices.
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Submitted 9 October, 2020; v1 submitted 28 April, 2020;
originally announced April 2020.
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Do** incorporation paths in catalyst-free Be-doped GaAs nanowires
Authors:
Alberto Casadei,
Peter Krogstrup,
Martin Heiss,
Jason A. Röhr,
Carlo Colombo,
Thibaud Ruelle,
Shivendra Upadhyay,
Claus B. Sørensen,
Jesper Nygård,
Anna Fontcuberta i Morral
Abstract:
The incorporation paths of Be in GaAs nanowires grown by the Ga-assisted method in molecular beam epitaxy has been investigated by electrical measurements of nanowires with different do** profiles. We find that Be atoms incorporate preferentially via the nanowire side facets, while the incorporation path through the Ga droplet is negligible. We also demonstrate that Be can diffuse into the volum…
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The incorporation paths of Be in GaAs nanowires grown by the Ga-assisted method in molecular beam epitaxy has been investigated by electrical measurements of nanowires with different do** profiles. We find that Be atoms incorporate preferentially via the nanowire side facets, while the incorporation path through the Ga droplet is negligible. We also demonstrate that Be can diffuse into the volume of the nanowire giving an alternative incorporation path. This work is an important step towards controlled do** of nanowires and will serve as a help for designing future devices based on nanowires.
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Submitted 5 October, 2012;
originally announced October 2012.
