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Quantification of the strong, phonon-induced Urbach tails in \b{eta}-Ga2O3 and their implications on electrical breakdown
Authors:
Ariful Islam,
Nathan David Rock,
Michael A. Scarpulla
Abstract:
In ultrawide bandgap (UWBG) nitride and oxide semiconductors, increased bandgap (Eg) correlates with greater ionicity and strong electron-phonon coupling. This limits mobility through polar optical phonon scattering, localizes carriers via polarons and self-trap**, broadens optical transitions via dynamic disorder, and modifies the breakdown field. Herein, we use polarized optical transmission s…
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In ultrawide bandgap (UWBG) nitride and oxide semiconductors, increased bandgap (Eg) correlates with greater ionicity and strong electron-phonon coupling. This limits mobility through polar optical phonon scattering, localizes carriers via polarons and self-trap**, broadens optical transitions via dynamic disorder, and modifies the breakdown field. Herein, we use polarized optical transmission spectroscopy from 77-633 K to investigate the Urbach energy (Eu) for many orientations of Fe- and Sn-doped \b{eta}-Ga2O3 bulk crystals. We find Eu values ranging from 60-140 meV at 293 K and static (structural defects plus zero-point phonons) disorder contributes more to Eu than dynamic (finite temperature phonon-induced) disorder. This is evidenced by lack of systematic Eu anisotropy, and Eu correlating more with X-ray diffraction rocking-curve broadening than with Sn-do**. The lowest measured Eu are ~10x larger than for traditional semiconductors, pointing out that band tail effects need to be carefully considered in these materials for high field electronics. We demonstrate that, because optical transmission through thick samples is sensitive to sub-gap absorption, the commonly-used Tauc extraction of bandgap from transmission through Ga2O3 greater than 1-3 micro meter thick is subject to errors. Combining our Eu(T) from Fe-doped samples with Eg(T) from ellipsometry, we extract a measure of an effective electron-phonon coupling indicating increases in weighted 2nd order deformation potential with temperature and a larger value for E parallel b than E parallel c. The large electron-phonon coupling in beta-Ga2O3 suggests that theories of electrical breakdown for traditional semiconductors need expansion to account not just for lower scattering time but also for impact ionization thresholds fluctuating in both time and space.
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Submitted 25 June, 2024; v1 submitted 6 April, 2024;
originally announced April 2024.
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Utilizing (Al, Ga)2O3/Ga2O3 superlattices to measure cation vacancy diffusion and vacancy-concentration-dependent diffusion of Al, Sn, and Fe in \b{eta} -Ga2O3
Authors:
Nathan D. Rock,
Haobo Yang,
Brian Eisner,
Aviva Levin,
Arkka Bhattacharyya,
Sriram Krishnamoorthy,
Praneeth Ranga,
Michael A Walker,
Larry Wang,
Ming Kit Cheng,
Wei Zhao,
Michael A. Scarpulla
Abstract:
Diffusion of native defects such as vacancies and their interactions with impurities are fundamental in semiconductor crystal growth, device processing, and long-term aging of equilibration and transient diffusion of vacancies are rarely investigated. We used aluminum-gallium oxide/gallium oxide superlattices (SLs) to detect and analyze transient diffusion of cation vacancies during annealing in O…
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Diffusion of native defects such as vacancies and their interactions with impurities are fundamental in semiconductor crystal growth, device processing, and long-term aging of equilibration and transient diffusion of vacancies are rarely investigated. We used aluminum-gallium oxide/gallium oxide superlattices (SLs) to detect and analyze transient diffusion of cation vacancies during annealing in O2 at 1000-1100 C. Using a novel finite difference scheme for the diffusion equation with time- and space-varying diffusion constant, we extract diffusion constants for Al, Fe, and cation vacancies under the given conditions, including the vacancy concentration dependence for Al. indicate that vacancies present in the substrate transiently diffuse through the SLs, interacting with Sn as it also diffuses. In the case of SLs grown on Sn-doped beta-gallium oxide substrates, gradients observed in the extent of Al diffusion indicate that vacancies present in the substrate transiently diffuse through the SLs, interacting with Sn as it also diffuses. In the case of SLs grown on (010) Fe-doped substrates, the Al diffusion is uniform through the SLs, indicating a depth-uniform concentration of vacancies. We find no evidence in either case for the introduction of gallium vacancies from the free surface at rates sufficient to affect Al diffusion down to ppm concentrations, which has important bearing on the validity of typically-made assumptions of vacancy equilibration. Additionally, we show that unintentional impurities in Sn-doped gallium oxide such as Fe, Ni, Mn, Cu, and Li also diffuse towards the surface and accumulate. Many of these likely have fast interstitial diffusion modes capable of destabilizing devices over time, thus highlighting the importance of controlling unintentional impurities in beta-gallium oxide wafers.
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Submitted 25 March, 2024;
originally announced March 2024.
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Faraday rotation of a tightly focussed beam from a single trapped atom
Authors:
G. Hétet,
L. Slodička,
N. Röck,
R. Blatt
Abstract:
Faraday rotation of a laser field induced by a single atom is demonstrated by tightly focussing a linearly polarized laser beam onto a laser-cooled ion held in a harmonic Paul trap. The polarization rotation signal is further used to measure the phase-shift associated with electromagnetically-induced-transparency and to demonstrate read-out of the internal state on the qubit transition with a dete…
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Faraday rotation of a laser field induced by a single atom is demonstrated by tightly focussing a linearly polarized laser beam onto a laser-cooled ion held in a harmonic Paul trap. The polarization rotation signal is further used to measure the phase-shift associated with electromagnetically-induced-transparency and to demonstrate read-out of the internal state on the qubit transition with a detection fidelity of 98 $\pm$ 1%. These results have direct implications for single atom magnetometery and dispersive read-out of atomic superpositions.
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Submitted 19 December, 2012; v1 submitted 4 December, 2012;
originally announced December 2012.
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Atom-atom entanglement by single-photon detection
Authors:
L. Slodička,
G. Hétet,
N. Röck,
P. Schindler,
M. Hennrich,
R. Blatt
Abstract:
A scheme for entangling distant atoms is realized, as proposed in the seminal paper by Cabrillo et al. [Phys. Rev. A 59, 1025 (1999)]. The protocol is based on quantum interference and detection of a single photon scattered from two effectively one meter distant laser-cooled and trapped atomic ions. The detection of a single photon heralds entanglement of two internal states of the trapped ions wi…
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A scheme for entangling distant atoms is realized, as proposed in the seminal paper by Cabrillo et al. [Phys. Rev. A 59, 1025 (1999)]. The protocol is based on quantum interference and detection of a single photon scattered from two effectively one meter distant laser-cooled and trapped atomic ions. The detection of a single photon heralds entanglement of two internal states of the trapped ions with high rate and with a fidelity limited mostly by atomic motion. Control of the entangled state phase is demonstrated by changing the path length of the single-photon interferometer.
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Submitted 27 February, 2013; v1 submitted 23 July, 2012;
originally announced July 2012.
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Interferometric thermometry of a single sub-Doppler cooled atom
Authors:
L. Slodička,
G. Hétet,
N. Röck,
S. Gerber,
P. Schindler,
M. Kumph,
M. Hennrich,
R. Blatt
Abstract:
Efficient self-interference of single-photons emitted by a sideband-cooled Barium ion is demonstrated. First, the technical tools for performing efficient coupling to the quadrupolar transition of a single $^{138}$Ba$^{+}$ ion are presented. We show efficient Rabi oscillations of the internal state of the ion using a highly stabilized 1.76 $μm$ fiber laser resonant with the S$_{1/2}$-D$_{5/2}$ tra…
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Efficient self-interference of single-photons emitted by a sideband-cooled Barium ion is demonstrated. First, the technical tools for performing efficient coupling to the quadrupolar transition of a single $^{138}$Ba$^{+}$ ion are presented. We show efficient Rabi oscillations of the internal state of the ion using a highly stabilized 1.76 $μm$ fiber laser resonant with the S$_{1/2}$-D$_{5/2}$ transition. We then show sideband cooling of the ion's motional modes and use it as a means to enhance the interference contrast of the ion with its mirror-image to up to 90%. Last, we measure the dependence of the self-interference contrast on the mean phonon number, thereby demonstrating the potential of the set-up for single-atom thermometry close to the motional ground state.
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Submitted 4 April, 2012; v1 submitted 21 February, 2012;
originally announced February 2012.
