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Lasing in a ZnO waveguide: clear evidence of polaritonic gain obtained by monitoring the continuous exciton screening
Authors:
Geoffrey Kreyder,
Léa Hermet,
Pierre Disseix,
François Médard,
Martine Mihailovic,
François Réveret,
Sophie Bouchoule,
Christiane Deparis,
Jesús Zuñiga-Pérez,
Joël Leymarie
Abstract:
The stimulated emission of exciton-polaritons was proposed as a means of lowering the lasing threshold because it does not require the dissociation of excitons to obtain an electron-hole plasma, as in a classical semiconductor laser based on population inversion. In this work we propose a method to prove unambiguously the polaritonic nature of lasing by combining experimental measurements with a m…
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The stimulated emission of exciton-polaritons was proposed as a means of lowering the lasing threshold because it does not require the dissociation of excitons to obtain an electron-hole plasma, as in a classical semiconductor laser based on population inversion. In this work we propose a method to prove unambiguously the polaritonic nature of lasing by combining experimental measurements with a model accounting for the permittivity change as a function of the carrier density. To do so we use angle resolved photoluminescence to observe the lasing at cryogenic temperature from a polariton mode in a zinc oxide waveguide structure, and to monitor the continuous shift of the polaritonic dispersion towards a photonic dispersion as the optical intensity of the pump is increased (up to 20 times the one at threshold). This shift is reproduced thanks to a model taking into account the reduction of the oscillator strength and the renormalization of the bandgap due to the screening of the electrostatic interaction between electrons and holes. Furthermore, the measurement of the carriers lifetime at optical intensities in the order of those at which the polariton lasing occurs enables us to estimate the carrier density, confirming it is lower than the corresponding Mott density for zinc oxide reported in the literature.
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Submitted 20 March, 2023; v1 submitted 15 December, 2022;
originally announced December 2022.
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Analysis and fabrication of a photonic crystal based anti-reflective coating for photovoltaics generated by evolutionary optimization
Authors:
Pauline Bennet,
Perrine Juillet,
Sara Ibrahim,
Vincent Berhier,
Mamadou Aliou Barry,
François Réveret,
Angélique Bousquet,
Olivier Teytaud,
Emmanuel Centeno,
Antoine Moreau
Abstract:
We optimize multilayered anti-reflective coatings for photovoltaic devices, using modern evolutionary algorithms. We apply a rigorous methodology to show that a given structure, which is particularly regular, emerge spontaneously in a very systematical way for a very broad range of conditions. The very regularity of the structure allows for a thorough physical analysis of how the designs operate.…
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We optimize multilayered anti-reflective coatings for photovoltaic devices, using modern evolutionary algorithms. We apply a rigorous methodology to show that a given structure, which is particularly regular, emerge spontaneously in a very systematical way for a very broad range of conditions. The very regularity of the structure allows for a thorough physical analysis of how the designs operate. This allows to understand that the central part is a photonic crystal utilized as a buffer for light, and that the external layers have the purpose of reducing the impedance mismatch between the outer media and the Bloch mode supported by the photonic crystal. This shows how optimization can suggest new design rules and be considered as a source of inspiration. Finally, we fabricate these structures with easily deployable techniques.
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Submitted 17 March, 2021; v1 submitted 26 November, 2020;
originally announced November 2020.
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Strong coupling of exciton-polaritons in a bulk GaN planar waveguide: quantifiying the coupling strength
Authors:
C. Brimont,
L. Doyennette,
G. Kreyder,
F. Réveret,
P. Disseix,
F. Médard,
J. Leymarie,
E. Cambril,
S. Bouchoule,
M. Gromovyi,
B. Alloing,
S. Rennesson,
F. Semond,
J. Zúñiga-Pérez,
T. Guillet
Abstract:
We investigate the demonstration and quantification of the strong coupling between excitons and guided photons in a GaN slab waveguide. The dispersions of waveguide polaritons are measured from T=6~K to 300~K through gratings. They are carefully analyzed within four models based on different assumptions, in order to assess the strong coupling regime. We prove that the guided photons and excitons a…
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We investigate the demonstration and quantification of the strong coupling between excitons and guided photons in a GaN slab waveguide. The dispersions of waveguide polaritons are measured from T=6~K to 300~K through gratings. They are carefully analyzed within four models based on different assumptions, in order to assess the strong coupling regime. We prove that the guided photons and excitons are strongly coupled at all investigated temperatures, with a small $(11 \%)$ dependence on the temperature. However the values of the Rabi splitting strongly vary among the four models: the "coupled oscillator" model over-estimates the coupling; the analytical "Elliott-Tanguy" model precisely describes the dielectric susceptibility of GaN near the excitonic transition, leading to a Rabi splitting equal to $82 \pm 10 \ meV$ for TE0 modes; the experimental ellipsometry-based model leads to smaller values of $55 \pm 6 \ meV.$ We evidence that for waveguides including active layers with large oscillator strengths, as required for room-temperature polaritonic devices, a strong bending of the modes dispersion is not necessarily the signature of the strong-coupling, which requires for its reliable assessment a precise analysis of the material dielectric susceptibility.
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Submitted 4 November, 2020; v1 submitted 12 February, 2020;
originally announced February 2020.
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Ultra thin anti-reflective coatings designed using Differential Evolution
Authors:
Emmanuel Centeno,
Amira Farahoui,
Rafik Smaali,
Ang\'élique Bousquet,
François Réveret,
Olivier Teytaud,
Antoine Moreau
Abstract:
We use a state-of-the-art optimization algorithm combined with a careful methodology to find optimal anti-reflective coatings. Our results show that ultra thin structures (less than $300 \,nm$ thick) outperform much thicker gradual patterns as well as traditional interferential anti-reflective coatings. These optimal designs actually combine a gradual increase of the refractive index with patterns…
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We use a state-of-the-art optimization algorithm combined with a careful methodology to find optimal anti-reflective coatings. Our results show that ultra thin structures (less than $300 \,nm$ thick) outperform much thicker gradual patterns as well as traditional interferential anti-reflective coatings. These optimal designs actually combine a gradual increase of the refractive index with patterns meant to leverage interferential effects. Contrarily to gradual patterns, they do not require extremely low refractive index materials, so that they can actually be fabricated. Using a cheap and easily deployable vapor deposition technique, we fabricated a 4-layer anti-reflective coating, which proved very efficient over the whole visible spectrum despite a total thickness of only 200 nm.
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Submitted 5 April, 2019;
originally announced April 2019.
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Competition between horizontal and vertical polariton lasing in planar microcavities
Authors:
O. Jamadi,
F. Reveret,
D. Solnyshkov,
P. Disseix,
J. Leymarie,
L. Mallet-Dida,
C. Brimont,
T. Guillet,
X. Lafosse,
S. Bouchoule,
F. Semond,
M. Leroux,
J. Zuniga-Perez,
G. Malpuech
Abstract:
Planar microcavities filled with active materials containing excitonic resonances host radiative exciton-polariton (polariton) modes with in-plane wave vectors within the light cone. They also host at least one mode guided in the cavity plane by total internal reflection and which is not radiatively coupled to the vacuum modes except through defects or sample edges. We show that polariton lasing m…
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Planar microcavities filled with active materials containing excitonic resonances host radiative exciton-polariton (polariton) modes with in-plane wave vectors within the light cone. They also host at least one mode guided in the cavity plane by total internal reflection and which is not radiatively coupled to the vacuum modes except through defects or sample edges. We show that polariton lasing mediated by polariton stimulated scattering can occur concomitantly in both types of modes in a microcavity. By adjusting the detuning between the exciton and the radiative photon mode one can favor polariton lasing either in the radiative or in the guided modes. Our results suggest that the competition between these two types of polariton lasing modes may have played a role in many previous observations of polariton lasing and polariton Bose Einstein condensation.
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Submitted 16 January, 2019; v1 submitted 12 October, 2018;
originally announced October 2018.
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Edge-emitting polariton laser and amplifier based on a ZnO waveguide
Authors:
O. Jamadi,
F. Reveret,
P. Disseix,
F. Medard,
J. Leymarie,
A. Moreau,
D. Solnyshkov,
C. Deparis,
M. Leroux,
E. Cambril,
S. Bouchoule,
J. Zuniga-Perez,
G. Malpuech
Abstract:
We demonstrate edge-emitting exciton-polariton (polariton) lasing from 5 to 300 K and amplification of non-radiative guided polariton modes within ZnO waveguides. The mode dispersion below and above the lasing threshold is directly measured using gratings present on top of the sample, fully demonstrating the polaritonic nature of the lasing modes. The threshold is found to be similar to that of ra…
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We demonstrate edge-emitting exciton-polariton (polariton) lasing from 5 to 300 K and amplification of non-radiative guided polariton modes within ZnO waveguides. The mode dispersion below and above the lasing threshold is directly measured using gratings present on top of the sample, fully demonstrating the polaritonic nature of the lasing modes. The threshold is found to be similar to that of radiative polarions in planar ZnO microcavities. These results open broad perspectives for guided polaritonics by allowing an easier and more straightforward implementation of polariton integrated circuits exploiting fast propagating polaritons.
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Submitted 26 January, 2018; v1 submitted 1 August, 2017;
originally announced August 2017.
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Polariton condensation phase diagram in wide bandgap planar microcavities: GaN versus ZnO
Authors:
O. Jamadi,
F. Réveret,
E. Mallet,
P. Disseix,
F. Médard,
M. Mihailovic,
D. Solnyshkov,
G. Malpuech,
J. Leymarie,
S. Bouchoule,
X. Lafosse,
F. Li,
M. Leroux,
F. Semond,
J. Zuniga-Perez
Abstract:
GaN and ZnO microcavities have been grown on patterned silicon substrate. Thanks to a common platform these microcavities share similar photonic properties with large quality factors and low photonic disorder which gives the possibility to determine the optimal spot diameter and to realize a complete comparative phase diagram study. Both systems have been investigated under the same experimental c…
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GaN and ZnO microcavities have been grown on patterned silicon substrate. Thanks to a common platform these microcavities share similar photonic properties with large quality factors and low photonic disorder which gives the possibility to determine the optimal spot diameter and to realize a complete comparative phase diagram study. Both systems have been investigated under the same experimental condition. Experimental results are well reproduced by simulation using Boltzmann equations. Lower polariton lasing threshold has been measured at low temperature in the ZnO microcavity as expected due to a larger Rabi splitting. However the threshold is strongly impacted by LO phonons through phonon-assisted polariton relaxation. We observe and discuss this effect as a function of temperature and detuning. Finally the polariton lasing threshold at room temperature is quite similar in both microcavities. This study highlights polariton relaxation mechanism and their importance for threshold optimization.
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Submitted 18 December, 2015;
originally announced December 2015.
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Patterned silicon substrates: a common platform for room temperature GaN and ZnO polariton lasers
Authors:
J. Zuniga-Perez,
E. Mallet,
R. Hahe,
M. J. Rashid,
S. Bouchoule,
C. Brimont,
P. Disseix,
J. Y. Duboz,
G. Gommé,
T. Guillet,
O. Jamadi,
X. Lafosse,
M. Leroux,
J. Leymarie,
Feng Li,
F. Réveret,
F. Semond
Abstract:
A new platform for fabricating polariton lasers operating at room temperature is introduced: nitride-based distributed Bragg reflectors epitaxially grown on patterned silicon substrates. The patterning allows for an enhanced strain relaxation thereby enabling to stack a large number of crack-free AlN/AlGaN pairs and achieve cavity quality factors of several thousands with a large spatial homogenei…
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A new platform for fabricating polariton lasers operating at room temperature is introduced: nitride-based distributed Bragg reflectors epitaxially grown on patterned silicon substrates. The patterning allows for an enhanced strain relaxation thereby enabling to stack a large number of crack-free AlN/AlGaN pairs and achieve cavity quality factors of several thousands with a large spatial homogeneity. GaN and ZnO active regions are epitaxially grown thereon and the cavities are completed with top dielectric Bragg reflectors. The two structures display strong-coupling and polariton lasing at room temperature and constitute an intermediate step in the way towards integrated polariton devices.
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Submitted 30 April, 2014;
originally announced April 2014.
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ZnO-Based Polariton Laser Operating at Room Temperature: From Excitonic to Photonic Condensate
Authors:
Feng Li,
Laurent Orosz,
Olfa Kamoun,
Sophie Bouchoule,
Christelle Brimont,
Pierre Disseix,
Thierry Guillet,
Xavier Lafosse,
Mathieu Leroux,
Joel Leymarie,
Meletis Mexis,
Martine Mihailovic,
François Réveret,
Dmitry Solnyshkov,
Jesus Zuniga-Perez,
Guillaume Malpuech
Abstract:
A laser threshold is determined by the gain condition, which has been progressively reduced by the use of heterostructures and of quantum confinement. The polariton laser is the ultimate step of this evolution: coherent emission is obtained from the spontaneous decay of an exciton-polariton condensate, without the achievement of any gain condition. ZnO, with its unique excitonic properties, is the…
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A laser threshold is determined by the gain condition, which has been progressively reduced by the use of heterostructures and of quantum confinement. The polariton laser is the ultimate step of this evolution: coherent emission is obtained from the spontaneous decay of an exciton-polariton condensate, without the achievement of any gain condition. ZnO, with its unique excitonic properties, is the best choice for a blue/UV-emitting polariton laser device. We report on the fabrication of a new family of fully hybrid microcavities that combine the best-quality ZnO material available (bulk substrate) and two dielectric distributed Bragg reflectors, demonstrating large quality factors (>2500) and Rabi splittings (~200 meV). Low threshold polariton lasing is achieved between 4 and 300 K and for excitonic fractions ranging between 12% and 96 %. A phase diagram highlighting the role of LO phonon-assisted relaxation in this polar semiconductor is established, and a remarkable switching between polariton modes is demonstrated.
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Submitted 31 July, 2012;
originally announced July 2012.
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LO-phonon assisted polariton lasing in a ZnO based microcavity
Authors:
L. Orosz,
F. Réveret,
F. Médard,
P. Disseix,
J. Leymarie,
M. Mihailovic,
D. Solnyshkov,
G. Malpuech,
J. Zuniga-Pérez,
F. Semond,
M. Leroux,
S. Bouchoule,
X. Lafosse,
M. Mexis,
C. Brimont,
T. Guillet
Abstract:
Polariton relaxation mechanisms are analysed experimentally and theoretically in a ZnO-based polariton laser. A minimum lasing threshold is obtained when the energy difference between the exciton reservoir and the bottom of the lower polariton branch is resonant with the LO phonon energy. Tuning off this resonance increases the threshold, and exciton-exciton scattering processes become involved in…
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Polariton relaxation mechanisms are analysed experimentally and theoretically in a ZnO-based polariton laser. A minimum lasing threshold is obtained when the energy difference between the exciton reservoir and the bottom of the lower polariton branch is resonant with the LO phonon energy. Tuning off this resonance increases the threshold, and exciton-exciton scattering processes become involved in the polariton relaxation. These observations are qualitatively reproduced by simulations based on the numerical solution of the semi-classical Boltzmann equations.
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Submitted 30 November, 2011;
originally announced December 2011.
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Fabrication and Optical Properties of a Fully Hybrid Epitaxial ZnO-Based Microcavity in the Strong Coupling Regime
Authors:
L. Orosz,
F. Réveret,
S. Bouchoule,
J. Zúñiga-Pérez,
F. Médard,
J. Leymarie,
P. Disseix,
M. Mihailovic,
E. Frayssinet,
F. Semond,
M. Leroux,
M. Mexis,
C. Brimont,
T. Guillet
Abstract:
In order to achieve polariton lasing at room temperature, a new fabrication methodology for planar microcavities is proposed: a ZnO-based microcavity in which the active region is epitaxially grown on an AlGaN/AlN/Si substrate and in which two dielectric mirrors are used. This approach allows as to simultaneously obtain a high-quality active layer together with a high photonic confinement as demon…
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In order to achieve polariton lasing at room temperature, a new fabrication methodology for planar microcavities is proposed: a ZnO-based microcavity in which the active region is epitaxially grown on an AlGaN/AlN/Si substrate and in which two dielectric mirrors are used. This approach allows as to simultaneously obtain a high-quality active layer together with a high photonic confinement as demonstrated through macro-, and micro-photoluminescence (μ-PL) and reflectivity experiments. A quality factor of 675 and a maximum PL emission at k=0 are evidenced thanks to μ-PL, revealing an efficient polaritonic relaxation even at low excitation power.
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Submitted 13 June, 2011; v1 submitted 4 May, 2011;
originally announced May 2011.
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Influence of the mirrors on the strong coupling regime in planar GaN microcavities
Authors:
F. Réveret,
P. Disseix,
J. Leymarie,
A. Vasson,
F. Semond,
M. Leroux,
J. Massies
Abstract:
The optical properties of bulk $λ/2$ GaN microcavities working in the strong light-matter coupling regime are investigated using angle-dependent reflectivity and photoluminescence at 5 K and 300 K. The structures have an Al$_{0.2}$Ga$_{0.8}$N/AlN distributed Bragg reflector as the bottom mirror and either an aluminium mirror or a dielectric Bragg mirror as the top one. First, the influence of th…
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The optical properties of bulk $λ/2$ GaN microcavities working in the strong light-matter coupling regime are investigated using angle-dependent reflectivity and photoluminescence at 5 K and 300 K. The structures have an Al$_{0.2}$Ga$_{0.8}$N/AlN distributed Bragg reflector as the bottom mirror and either an aluminium mirror or a dielectric Bragg mirror as the top one. First, the influence of the number of pairs of the bottom mirror on the Rabi splitting is studied. The increase of the mirror penetration depth is correlated with a reduction of the Rabi splitting. Second, the emission of the lower polariton branch is observed at low temperature in a microcavity containing two Bragg mirrors and exibiting a quality factor of 190. Our simulations using the transfer-matrix formalism, taking into account the real structure of the samples investigated are in good agreement with experimental results.
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Submitted 20 May, 2008;
originally announced May 2008.
