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Perovskite-type cobalt oxide at the multiferroic Co/Pb Zr$_{0.2}$Ti$_{0.8}$O$_{3}$ interface
Authors:
K. Mohseni,
A. Polyakov,
H. B. Vasili,
I. V. Maznichenko,
S. Ostanin,
A. Quindeau,
N. Jedrecy,
E. Fonda,
L. V. Bekenov,
V. N. Antonov,
P. Gargani,
M. Valvidares,
I. Mertig,
S. S. P. Parkin,
A. Ernst,
H. L. Meyerheim
Abstract:
Magnetic Tunnel Junctions whose basic element consists of two ferromagnetic electrodes separated by an insulating non-magnetic barrier have become intensely studied and used in non-volatile spintronic devices. Since ballistic tunnel of spin-polarized electrons sensitively depends on the chemical composition and the atomic geometry of the lead/barrier interfaces their proper design is a key issue f…
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Magnetic Tunnel Junctions whose basic element consists of two ferromagnetic electrodes separated by an insulating non-magnetic barrier have become intensely studied and used in non-volatile spintronic devices. Since ballistic tunnel of spin-polarized electrons sensitively depends on the chemical composition and the atomic geometry of the lead/barrier interfaces their proper design is a key issue for achieving the required functionality of the devices such as e.g. a high tunnel magneto resistance. An important leap in the development of novel spintronic devices is to replace the insulating barrier by a ferroelectric which adds new additional functionality induced by the polarization direction in the barrier giving rise to the tunnel electro resistance (TER). The multiferroic tunnel junction Co/PbZr$_{0.2}$Ti$_{0.8}$O$_{3}$/La$_{2/3}$Sr$_{1/3}$MnO$_3$ (Co/PZT/LSMO) represents an archetype system for which - despite intense studies - no consensus exists for the interface geometry and their effect on transport properties. Here we provide the first analysis of the Co/PZT interface at the atomic scale using complementary techniques, namely x-ray diffraction and extended x-ray absorption fine structure in combination with x-ray magnetic circular dichroism and ab-initio calculations. The Co/PZT interface consists of one perovskite-type cobalt oxide unit cell [CoO$_{2}$/CoO/Ti(Zr)O$_{2}$] on which a locally ordered cobalt film grows. Magnetic moments (m) of cobalt lie in the range between m=2.3 and m=2.7$μ_{B}$, while for the interfacial titanium atoms they are small (m=+0.005 $μ_{B}$) and parallel to cobalt which is attributed to the presence of the cobalt-oxide interface layers. These insights into the atomistic relation between interface and magnetic properties is expected to pave the way for future high TER devices.
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Submitted 1 April, 2020;
originally announced April 2020.
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Ferromagnetic resonance and magnetoresistive measurements evidencing magnetic vortex crystal in nickel thin film with patterned antidot array
Authors:
I. R. B. Ribeiro,
J. F. Felix,
L. C. Figueiredo,
P. C. de Morais,
S. O. Ferreira,
W. A. Moura-Melo,
A. R. Pereira,
A. Quindeau,
C. I. L. de Araujo
Abstract:
Ferromagnetic vortices deliver robust out-of-plane magnetization at extremely small scales. Their handling and creation therefore has high potential to become a necessary ingredient for future data storage technologies in order to keep up with the pace of growing information density demands. In this study we show that by using one step nanolithography method, we are able to create ferromagnetic vo…
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Ferromagnetic vortices deliver robust out-of-plane magnetization at extremely small scales. Their handling and creation therefore has high potential to become a necessary ingredient for future data storage technologies in order to keep up with the pace of growing information density demands. In this study we show that by using one step nanolithography method, we are able to create ferromagnetic vortex lattices in thin nickel films. The necessary control of the magnetic stray field at the domain edges was achieved by actively modifying the ferromagnetic thin film anisotropic properties at nanometer scale. We present experimental evidence using ferromagnetic resonance and magnetoresistance measurements supporting simulations based on the theoretical prediction of the proclaimed vortex structures.
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Submitted 10 September, 2015;
originally announced September 2015.
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Dual gate control of bulk transport and magnetism in the spin-orbit insulator Sr2IrO4
Authors:
Chengliang Lu,
Shuai Dong,
Andy Quindeau,
Daniele Preziosi,
Ni Hu,
Marin Alexe
Abstract:
The 5d iridates have been the subject of much recent attention due to the predictions of a large array of novel electronic phases driven by twisting strong spin-orbit coupling and Hubbard correlation. As a prototype, the single layered perovskite Sr2IrO4 was first revealed to host a Jeff=1/2 Mott insulating state. In this material, the approximate energy scale of a variety of interactions, involvi…
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The 5d iridates have been the subject of much recent attention due to the predictions of a large array of novel electronic phases driven by twisting strong spin-orbit coupling and Hubbard correlation. As a prototype, the single layered perovskite Sr2IrO4 was first revealed to host a Jeff=1/2 Mott insulating state. In this material, the approximate energy scale of a variety of interactions, involving spin-orbit coupling, magnetic exchange interaction, and the Mott gap, allows close coupling among the corresponding physical excitations, opening the possibility of cross control of the physical properties. Here, we experimentally demonstrate the effective gate control of both the transport and magnetism in a Sr2IrO4-based field effect transistor using an ionic liquid dielectric. This approach could go beyond the surface-limited field effect seen in conventional transistors, reflecting the unique aspect of the Jeff=1/2 state. The simultaneous modulation of conduction and magnetism confirms the proposed intimate coupling of charge, orbital, and spin degrees of freedom in this oxide. These phenomena are probably related to an enhanced deviation from the ideal Jeff=1/2 state due to the gate-promoted conduction. The present work would have important implications in modelling the unusual physics enabled by strong spin-orbit coupling, and provides a new route to explore those emergent quantum phases in iridates.
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Submitted 9 March, 2015;
originally announced March 2015.
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Crossover of conduction mechanism in Sr2IrO4 epitaxial thin films
Authors:
Chengliang Lu,
Andy Quindeau,
Hakan Deniz,
Daniele Preziosi,
Dietrich Hesse,
Marin Alexe
Abstract:
High quality epitaxial Sr2IrO4 thin films with various thicknesses (9-300 nm) have been grown on SrTiO3 (001) substrates, and their electric transport properties have been investigated. All samples showed the expected insulating behavior with a strong resistivity dependence on film thickness, that can be as large as three orders of magnitude at low temperature. A close examination of the transport…
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High quality epitaxial Sr2IrO4 thin films with various thicknesses (9-300 nm) have been grown on SrTiO3 (001) substrates, and their electric transport properties have been investigated. All samples showed the expected insulating behavior with a strong resistivity dependence on film thickness, that can be as large as three orders of magnitude at low temperature. A close examination of the transport data revealed interesting crossover behaviors for the conduction mechanism upon variation of thickness and temperature. While Mott variable range hop** (VRH) dominated the transport for films thinner than 85 nm, high temperature thermal activation behavior was observed for films with large thickness, which was followed by a crossover from Mott to Efros-Shklovskii (ES) VRH in the low temperature range. This low temperature crossover from Mott to ES VRH indicates the presence of a Coulomb gap (~3 meV). Our results demonstrate the competing and tunable conduction in Sr2IrO4 thin films, which in turn would be helpful for understanding the insulating nature related to strong spin-orbit-coupling of the 5d iridates.
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Submitted 28 August, 2014;
originally announced August 2014.
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Transverse rectification in density-modulated two-dimensional electron gases
Authors:
A. Ganczarczyk,
S. Rojek,
A. Quindeau,
M. Geller,
A. Hucht,
C. Notthoff,
D. Reuter,
A. D. Wieck,
J. König,
A. Lorke
Abstract:
We demonstrate tunable transverse rectification in a density-modulated two-dimensional electron gas (2DEG). The density modulation is induced by two surface gates, running in parallel along a narrow stripe of 2DEG. A transverse voltage in the direction of the density modulation is observed, i.e. perpendicular to the applied source-drain voltage. The polarity of the transverse voltage is independen…
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We demonstrate tunable transverse rectification in a density-modulated two-dimensional electron gas (2DEG). The density modulation is induced by two surface gates, running in parallel along a narrow stripe of 2DEG. A transverse voltage in the direction of the density modulation is observed, i.e. perpendicular to the applied source-drain voltage. The polarity of the transverse voltage is independent of the polarity of the source-drain voltage, demonstrating rectification in the device. We find that the transverse voltage $U_{y}$ depends quadratically on the applied source-drain voltage and non-monotonically on the density modulation. The experimental results are discussed in the framework of a diffusion thermopower model.
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Submitted 16 November, 2012; v1 submitted 4 April, 2008;
originally announced April 2008.
