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Imaging Quantum Interference in Stadium-Shaped Monolayer and Bilayer Graphene Quantum Dots
Authors:
Zhehao Ge,
Dillon Wong,
Juwon Lee,
Frederic Joucken,
Eberth A. Quezada-Lopez,
Salman Kahn,
Hsin-Zon Tsai,
Takashi Taniguchi,
Kenji Watanabe,
Feng Wang,
Alex Zettl,
Michael F. Crommie,
Jairo Velasco Jr
Abstract:
Experimental realization of graphene-based stadium-shaped quantum dots (QDs) have been few and incompatible with scanned probe microscopy. Yet, direct visualization of electronic states within these QDs is crucial for determining the existence of quantum chaos in these systems. We report the fabrication and characterization of electrostatically defined stadium-shaped QDs in heterostructure devices…
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Experimental realization of graphene-based stadium-shaped quantum dots (QDs) have been few and incompatible with scanned probe microscopy. Yet, direct visualization of electronic states within these QDs is crucial for determining the existence of quantum chaos in these systems. We report the fabrication and characterization of electrostatically defined stadium-shaped QDs in heterostructure devices composed of monolayer graphene (MLG) and bilayer graphene (BLG). To realize a stadium-shaped QD, we utilized the tip of a scanning tunneling microscope to charge defects in a supporting hexagonal boron nitride flake. The stadium states visualized are consistent with tight-binding-based simulations, but lack clear quantum chaos signatures. The absence of quantum chaos features in MLG-based stadium QDs is attributed to the leaky nature of the confinement potential due to Klein tunneling. In contrast, for BLG-based stadium QDs (which have stronger confinement) quantum chaos is precluded by the smooth confinement potential which reduces interference and mixing between states.
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Submitted 12 July, 2022;
originally announced July 2022.
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Denoising Scanning Tunneling Microscopy Images of Graphene with Supervised Machine Learning
Authors:
Frédéric Joucken,
John L. Davenport,
Zhehao Ge,
Eberth A. Quezada-Lopez,
Takashi Taniguchi,
Kenji Watanabe,
Jairo Velasco Jr.,
Jérôme Lagoute,
Robert A. Kaindl
Abstract:
Machine learning (ML) methods are extraordinarily successful at denoising photographic images. The application of such denoising methods to scientific images is, however, often complicated by the difficulty in experimentally obtaining a suitable expected result as an input to training the ML network. Here, we propose and demonstrate a simulation-based approach to address this challenge for denoisi…
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Machine learning (ML) methods are extraordinarily successful at denoising photographic images. The application of such denoising methods to scientific images is, however, often complicated by the difficulty in experimentally obtaining a suitable expected result as an input to training the ML network. Here, we propose and demonstrate a simulation-based approach to address this challenge for denoising atomic-scale scanning tunneling microscopy (STM) images, which consists of training a convolutional neural network on STM images simulated based on a tight-binding electronic structure model. As model materials, we consider graphite and its mono- and few-layer counterpart, graphene. With the goal of applying it to any experimental STM image obtained on graphitic systems, the network was trained on a set of simulated images with varying characteristics such as tip height, sample bias, atomic-scale defects, and non-linear background. Denoising of both simulated and experimental images with this approach is compared to that of commonly-used filters, revealing a superior outcome of the ML method in the removal of noise as well as scanning artifacts - including on features not simulated in the training set. An extension to larger STM images is further discussed, along with intrinsic limitations arising from training set biases that discourage application to fundamentally unknown surface features. The approach demonstrated here provides an effective way to remove noise and artifacts from typical STM images, yielding the basis for further feature discernment and automated processing.
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Submitted 19 November, 2022; v1 submitted 17 June, 2022;
originally announced June 2022.
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Surface states and quasiparticle interference in Bernal and rhombohedral graphite with and without trigonal war**
Authors:
Vardan Kaladzhyan,
Sarah Pinon,
Frédéric Joucken,
Zhehao Ge,
Eberth A. Quezada-Lopez,
T. Taniguchi,
K. Watanabe,
Jairo Velasco Jr,
Cristina Bena
Abstract:
We use an exact analytical technique [Phys. Rev. B \textbf{101}, 115405 (2020), Phys. Rev. B \textbf{102}, 165117 (2020)] to recover the surface Green's functions for Bernal (ABA) and rhombohedral (ABC) graphite. For rhombohedral graphite we recover the predicted surface flat bands. For Bernal graphite we find that the surface state spectral function is similar to the bilayer one, but the trigonal…
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We use an exact analytical technique [Phys. Rev. B \textbf{101}, 115405 (2020), Phys. Rev. B \textbf{102}, 165117 (2020)] to recover the surface Green's functions for Bernal (ABA) and rhombohedral (ABC) graphite. For rhombohedral graphite we recover the predicted surface flat bands. For Bernal graphite we find that the surface state spectral function is similar to the bilayer one, but the trigonal war** effects are enhanced, and the surface quasiparticles have a much shorter lifetime. We subsequently use the T-matrix formalism to study the quasiparticle interference patterns generated on the surface of semi-infinite ABA and ABC graphite in the presence of impurity scattering. We compare our predictions to experimental STM data of impurity-localized states on the surface of Bernal graphite which appear to be in a good agreement with our calculations.
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Submitted 25 October, 2021; v1 submitted 18 May, 2021;
originally announced May 2021.
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Quasiparticle interference patterns in bilayer graphene with trigonal war**
Authors:
Vardan Kaladzhyan,
Frédéric Joucken,
Zhehao Ge,
Eberth A. Quezada-Lopez,
Takashi Taniguchi,
Kenji Watanabe,
Jairo Velasco Jr,
Cristina Bena
Abstract:
We calculate the form of quasiparticle interference patterns in bilayer graphene within a low-energy description, taking into account perturbatively the trigonal war** terms. We introduce four different types of impurities localized on the A and B sublattices of the first and the second layer, and we obtain closed-form analytical expressions both in real and Fourier spaces for the oscillatory co…
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We calculate the form of quasiparticle interference patterns in bilayer graphene within a low-energy description, taking into account perturbatively the trigonal war** terms. We introduce four different types of impurities localized on the A and B sublattices of the first and the second layer, and we obtain closed-form analytical expressions both in real and Fourier spaces for the oscillatory corrections to the local density of states generated by the impurities. Finally, we compare our findings with recent experimental and semi-analytical T-matrix results from arXiv:2104.10620 and we show that there is a very good agreement between our findings and the previous results, as well as with the experimental data.
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Submitted 3 May, 2021;
originally announced May 2021.
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Sublattice dependence and gate-tunability of midgap and resonant states induced by native dopants in Bernal-stacked bilayer graphene
Authors:
Frédéric Joucken,
Cristina Bena,
Zhehao Ge,
Eberth A. Quezada-Lopez,
François Ducastelle,
Takashi Tanagushi,
Kenji Watanabe,
Jairo Velasco Jr
Abstract:
The properties of semiconductors can be crucially impacted by midgap states induced by dopants, which can be native or intentionally incorporated in the crystal lattice. For Bernal-stacked bilayer graphene (BLG), which has a tunable bandgap, the existence of midgap states induced by dopants has been conjectured, but never confirmed experimentally. Here, we report scanning tunneling microscopy and…
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The properties of semiconductors can be crucially impacted by midgap states induced by dopants, which can be native or intentionally incorporated in the crystal lattice. For Bernal-stacked bilayer graphene (BLG), which has a tunable bandgap, the existence of midgap states induced by dopants has been conjectured, but never confirmed experimentally. Here, we report scanning tunneling microscopy and spectroscopy results, supported by tight-binding calculations, that demonstrate the existence of midgap states in BLG. We show that the midgap state in BLG -- for which we demonstrate gate-tunability -- appears when the dopant is hosted on the non-dimer sublattice sites. We further evidence the presence of narrow resonances at the onset of the high energy bands (valence or conduction, depending on the dopant type) when the dopants lie on the dimer sublattice sites. These results suggest that dopants/defects can play an important role in the transport and optical properties of multilayer graphene samples, especially at energies close to the band extrema.
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Submitted 7 September, 2021; v1 submitted 30 April, 2021;
originally announced April 2021.
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Direct Visualization of Native Defects in Graphite and Their Effect on the Electronic Properties of Bernal-Stacked Bilayer Graphene
Authors:
Frederic Joucken,
Cristina Bena,
Zhehao Ge,
Ebert A. Quezada-Lopez,
Sarah Pinon,
Vardan Kaladzhyan,
Takashi Taniguchi,
Kenji Watanabe,
Aires Ferreira,
Jairo Velasco Jr
Abstract:
Graphite crystals used to prepare graphene-based heterostructures are generally assumed to be defect free. We report here scanning tunneling microscopy results that show graphite commonly used to prepare graphene devices can contain a significant amount of native defects. Extensive scanning of the surface allows us to determine the concentration of native defects to be 6.6$\times$10$^8$ cm$^{-2}$.…
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Graphite crystals used to prepare graphene-based heterostructures are generally assumed to be defect free. We report here scanning tunneling microscopy results that show graphite commonly used to prepare graphene devices can contain a significant amount of native defects. Extensive scanning of the surface allows us to determine the concentration of native defects to be 6.6$\times$10$^8$ cm$^{-2}$. We further study the effects of these native defects on the electronic properties of Bernal-stacked bilayer graphene. We observe gate-dependent intravalley scattering and successfully compare our experimental results to T-matrix-based calculations, revealing a clear carrier density dependence in the distribution of the scattering vectors. We also present a technique for evaluating the spatial distribution of short-scale scattering. A theoretical analysis based on the Boltzmann transport equation predicts that the dilute native defects identified here are an important extrinsic source of scattering, ultimately setting the mobility at low temperatures.
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Submitted 1 September, 2021; v1 submitted 21 April, 2021;
originally announced April 2021.
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Determination of the trigonal war** orientation in Bernal-stacked bilayer graphene via scanning tunneling microscopy
Authors:
Frédéric Joucken,
Zhehao Ge,
Eberth A. Quezada-López,
John L. Davenport,
Kenji Watanabe,
Takashi Taniguchi,
Jairo Velasco Jr
Abstract:
The existence of strong trigonal war** around the K point for the low energy electronic states in multilayer (N$\geq$2) graphene films and graphite is well established. It is responsible for phenomena such as Lifshitz transitions and anisotropic ballistic transport. The absolute orientation of the trigonal war** with respect to the center of the Brillouin zone is however not agreed upon. Here,…
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The existence of strong trigonal war** around the K point for the low energy electronic states in multilayer (N$\geq$2) graphene films and graphite is well established. It is responsible for phenomena such as Lifshitz transitions and anisotropic ballistic transport. The absolute orientation of the trigonal war** with respect to the center of the Brillouin zone is however not agreed upon. Here, we use quasiparticle scattering experiments on a gated bilayer graphene/hexagonal boron nitride heterostructure to settle this disagreement. We compare Fourier transforms of scattering interference maps acquired at various energies away from the charge neutrality point with tight-binding-based joint density of states simulations. This comparison enables unambiguous determination of the trigonal war** orientation for bilayer graphene low energy states. Our experimental technique is promising for quasi-directly studying fine features of the band structure of gated two-dimensional materials such as topological transitions, interlayer hybridization, and moiré minibands.
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Submitted 18 March, 2020; v1 submitted 28 November, 2019;
originally announced November 2019.
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Nanospot Angle-Resolved Photoemission Study of Bernal-Stacked Bilayer Graphene on Hexagonal Boron Nitride: Band Structure and Local Variation of Lattice Alignment
Authors:
Frédéric Joucken,
Eberth A. Quezada-López,
Jose Avila,
Chaoyu Chen,
John L. Davenport,
Hechin Chen,
Kenji Watanabe,
Takashi Taniguchi,
Maria Carmen Asensio,
Jairo Velasco Jr
Abstract:
Hexagonal boron nitride (hBN) is the supporting substrate of choice for two-dimensional material devices because it is atomically flat and chemically inert. However, due to the small size of mechanically exfoliated hBN flakes, electronic structure studies of 2D materials supported by hBN using angle-resolved photoemission spectroscopy (ARPES) are challenging. Here we investigate the electronic ban…
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Hexagonal boron nitride (hBN) is the supporting substrate of choice for two-dimensional material devices because it is atomically flat and chemically inert. However, due to the small size of mechanically exfoliated hBN flakes, electronic structure studies of 2D materials supported by hBN using angle-resolved photoemission spectroscopy (ARPES) are challenging. Here we investigate the electronic band structure of a Bernal-stacked bilayer graphene sheet on a hexagonal boron nitride (BLG/hBN) flake using nanospot ARPES (nanoARPES). By fitting high-resolution energy vs. momentum electronic band spectra, we extract the tight-binding parameters for BLG on hBN. In addition, we reveal spatial variations of the alignment angle between BLG and hBN lattices via inhomogeneity of the electronic bands near the Fermi level. We confirmed these findings by scanning tunneling microscopy measurements obtained on the same device. Our results from spatially resolved nanoARPES measurements of BLG/hBN heterostructures are instrumental for understanding experiments that utilize spatially averaging techniques such as electronic transport and optical spectroscopy.
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Submitted 24 April, 2019;
originally announced April 2019.
