Showing 1–17 of 17 results for author: Quereda, J

Locally Phase-Engineered MoTe$_2$ for Near-Infrared Photodetectors

Authors: Jan Hidding, Cédric A. Cordero-Silis, Daniel Vaquero, Konstantinos P. Rompotis, Jorge Quereda, Marcos H. D. Guimarães

Abstract: Transition metal dichalcogenides (TMDs) are ideal systems for two-dimensional (2D) optoelectronic applications, owing to their strong light-matter interaction and various band gap energies. New techniques to modify the crystallographic phase of TMDs have recently been discovered, allowing the creation of lateral heterostructures and the design of all-2D circuitry. Thus far, the potential benefits… ▽ More Transition metal dichalcogenides (TMDs) are ideal systems for two-dimensional (2D) optoelectronic applications, owing to their strong light-matter interaction and various band gap energies. New techniques to modify the crystallographic phase of TMDs have recently been discovered, allowing the creation of lateral heterostructures and the design of all-2D circuitry. Thus far, the potential benefits of phase-engineered TMD devices for optoelectronic applications are still largely unexplored. The dominant mechanisms involved in the photocurrent generation in these systems remain unclear, hindering further development of new all-2D optoelectronic devices. Here, we fabricate locally phase-engineered MoTe$_{2}$ optoelectronic devices, creating a metal (1T') semiconductor (2H) lateral junction and unveil the main mechanisms at play for photocurrent generation. We find that the photocurrent originates from the 1T'-2H junction, with a maximum at the 2H MoTe$_{2}$ side of the junction. This observation, together with the non-linear IV-curve, indicates that the photovoltaic effect plays a major role on the photon-to-charge current conversion in these systems. Additionally, the 1T'-2H MoTe$_{2}$ heterojunction device exhibits a fast optoelectronic response over a wavelength range of 700 nm to 1100 nm, with a rise and fall times of 113 $μ$s and 110 $μ$s, two orders of magnitude faster when compared to a directly contacted 2H MoTe$_{2}$ device. These results show the potential of local phase-engineering for all-2D optoelectronic circuitry. △ Less

Submitted 3 June, 2024; originally announced June 2024.

Polarization-tuneable excitonic spectral features in the optoelectronic response of atomically thin ReS2

Authors: Daniel Vaquero, Olga Arroyo-Gascón, Juan Salvador-Sánchez, Pedro L. Alcázar-Ruano, Enrique Diez, Ana Perez-Rodríguez, Julián D. Correa, Francisco Dominguez-Adame, Leonor Chico, Jorge Quereda

Abstract: The low crystal symmetry of rhenium disulphide (ReS2) leads to the emergence of dichroic optical and optoelectronic response, absent in other layered transition metal dichalcogenides, which could be exploited for device applications requiring polarization resolution. To date, spectroscopy studies on the optical response of ReS2 have relied almost exclusively in characterization techniques involvin… ▽ More The low crystal symmetry of rhenium disulphide (ReS2) leads to the emergence of dichroic optical and optoelectronic response, absent in other layered transition metal dichalcogenides, which could be exploited for device applications requiring polarization resolution. To date, spectroscopy studies on the optical response of ReS2 have relied almost exclusively in characterization techniques involving optical detection, such as photoluminescence, absorbance, or reflectance spectroscopy. However, to realize the full potential of this material, it is necessary to develop knowledge on its optoelectronic response with spectral resolution. In this work, we study the polarization-dependent photocurrent spectra of few-layer ReS2 photodetectors, both in room conditions and at cryogenic temperature. Our spectral measurements reveal two main exciton lines at energies matching those reported for optical spectroscopy measurements, as well as their excited states. Moreover, we also observe an additional exciton-like spectral feature with a photoresponse intensity comparable to the two main exciton lines. We attribute this feature, not observed in earlier photoluminescence measurements, to a non-radiative exciton transition. The intensities of the three main exciton features, as well as their excited states, modulate with linear polarization of light, each one acquiring maximal strength at a different polarization angle. We have performed first-principles exciton calculations employing the Bethe-Salpeter formalism, which corroborate our experimental findings. Our results bring new perspectives for the development of ReS2-based nanodevices. △ Less

Submitted 4 October, 2023; v1 submitted 22 June, 2023; originally announced June 2023.

Fast response photogating in monolayer MoS2 phototransistors

Authors: Daniel Vaquero, Vito Clericò, Juan Salvador-Sánchez, Elena Díaz, Francisco Domínguez-Adame, Leonor Chico, Yahya M. Meziani, Enrique Diez, Jorge Quereda

Abstract: Two-dimensional transition metal dichalcogenide (TMD) phototransistors have been object of intensive research during the last years due to their potential for photodetection. Photoresponse in these devices is typically caused by a combination of two physical mechanisms: photoconductive effect (PCE) and photogating effect (PGE). In earlier literature for monolayer (1L) MoS2 phototransistors PGE is… ▽ More Two-dimensional transition metal dichalcogenide (TMD) phototransistors have been object of intensive research during the last years due to their potential for photodetection. Photoresponse in these devices is typically caused by a combination of two physical mechanisms: photoconductive effect (PCE) and photogating effect (PGE). In earlier literature for monolayer (1L) MoS2 phototransistors PGE is generally attributed to charge trap** by polar molecules adsorbed to the semiconductor channel, giving rise to a very slow photoresponse. Thus, the photoresponse of 1L-MoS2 phototransistors at high-frequency light modulation is assigned to PCE alone. Here we investigate the photoresponse of a fully h-BN encapsulated monolayer (1L) MoS2 phototransistor. In contrast with previous understanding, we identify a rapidly responding PGE mechanism that becomes the dominant contribution to photoresponse under high-frequency light modulation. Using a Hornbeck-Haynes model for the photocarrier dynamics, we fit the illumination power dependence of this PGE and estimate the energy level of the involved traps. The resulting energies are compatible with shallow traps in MoS2 caused by the presence of sulfur vacancies. △ Less

Submitted 13 September, 2021; v1 submitted 22 December, 2020; originally announced December 2020.

Comments: arXiv admin note: text overlap with arXiv:2004.02526

The role of device asymmetries and Schottky barriers on the helicity-dependent photoresponse of 2D phototransistors

Authors: Jorge Quereda, Jan Hidding, Talieh S. Ghiasi, Bart J. van Wees, Caspar H. van der Wal, Marcos H. D. Guimaraes

Abstract: Circular photocurrents (CPC), namely circular photogalvanic (CPGE) and photon drag effects, have recently been reported both in monolayer and multilayer transition metal dichalcogenide (TMD) phototransistors. However, the underlying physics for the emergence of these effects are not yet fully understood. In particular, the emergence of CPGE is not compatible with the D3h crystal symmetry of two-di… ▽ More Circular photocurrents (CPC), namely circular photogalvanic (CPGE) and photon drag effects, have recently been reported both in monolayer and multilayer transition metal dichalcogenide (TMD) phototransistors. However, the underlying physics for the emergence of these effects are not yet fully understood. In particular, the emergence of CPGE is not compatible with the D3h crystal symmetry of two-dimensional TMDs, and should only be possible if the symmetry of the electronic states is reduced by influences such as an external electric field or mechanical strain. Schottky contacts, nearly ubiquitous in TMD-based transistors, can provide the high electric fields causing a symmetry breaking in the devices. Here, we investigate the effect of these Schottky contacts on the CPC by characterizing the helicity-dependent photoresponse of monolayer MoSe2 devices both with direct metal-MoSe2 Schottky contacts and with h-BN tunnel barriers at the contacts. We find that, when Schottky barriers are present in the device, additional contributions to CPC become allowed, resulting in emergence of CPC for illumination at normal incidence. △ Less

Submitted 20 August, 2020; originally announced August 2020.

Excitons, trions and Rydberg states in monolayer MoS2 revealed by low temperature photocurrent spectroscopy

Authors: Daniel Vaquero, Vito Clericò, Juan Salvador-Sánchez, Adrián Martín-Ramos, Elena Díaz, Francisco Domínguez-Adame, Yahya M. Meziani, Enrique Diez, Jorge Quereda

Abstract: We investigate excitonic transitions in a h-BN encapsulated monolayer $\textrm{MoS}_2$ phototransistor by photocurrent spectroscopy at cryogenic temperature (T = 5 K). The spectra presents excitonic peaks with linewidths as low as 8 meV, one order of magnitude lower than in earlier photocurrent spectroscopy measurements. We observe four spectral features corresponding to the ground states of neutr… ▽ More We investigate excitonic transitions in a h-BN encapsulated monolayer $\textrm{MoS}_2$ phototransistor by photocurrent spectroscopy at cryogenic temperature (T = 5 K). The spectra presents excitonic peaks with linewidths as low as 8 meV, one order of magnitude lower than in earlier photocurrent spectroscopy measurements. We observe four spectral features corresponding to the ground states of neutral excitons ($\textrm{X}_{\textrm{1s}}^\textrm{A}$ and $\textrm{X}_{\textrm{1s}}^\textrm{B}$) and charged trions ($\textrm{T}^\textrm{A}$ and $\textrm{T}^\textrm{B}$) as well as up to eight additional spectral lines at energies above the $\textrm{X}_{\textrm{1s}}^\textrm{B}$ transition, which we attribute to the Rydberg series of excited states of $\textrm{X}^\textrm{A}$ and $\textrm{X}^\textrm{B}$. The relative intensities of the different spectral features can be tuned by the applied gate and drain-source voltages, with trions and Rydberg excited states becoming more prominent at large gate voltages. Using an effective-mass theory for excitons in two-dimensional transition-metal dichalcogenides we are able to accurately fit the measured spectral lines and unambiguously associate them with their corresponding Rydberg states. The fit also allows us to determine the quasiparticle bandgap and spin-orbit splitting of monolayer $\textrm{MoS}_2$, as well as the exciton binding energies of $\textrm{X}^\textrm{A}$ and $\textrm{X}^\textrm{B}$. △ Less

Submitted 28 August, 2020; v1 submitted 6 April, 2020; originally announced April 2020.

Semiconductor channel mediated photodo** in h-BN encapsulated monolayer MoSe2 phototransistors

Authors: Jorge Quereda, Talieh S. Ghiasi, Caspar H. van der Wal, Bart J. van Wees

Abstract: In optically excited two-dimensional phototransistors, charge transport is often affected by photodo** effects. Recently, it was shown that such effects are especially strong and persistent for graphene/h-BN heterostructures, and that they can be used to controllably tune the charge neutrality point of graphene. In this work we investigate how this technique can be extended to h BN encapsulated… ▽ More In optically excited two-dimensional phototransistors, charge transport is often affected by photodo** effects. Recently, it was shown that such effects are especially strong and persistent for graphene/h-BN heterostructures, and that they can be used to controllably tune the charge neutrality point of graphene. In this work we investigate how this technique can be extended to h BN encapsulated monolayer MoSe_2 phototransistors at room temperature. By exposing the sample to 785 nm laser excitation we can controllably increase the charge carrier density of the MoSe_2 channel by Δn {\approx} 4.45 {\times} 10^{12} cm^{-2}, equivalent to applying a back gate voltage of 60 V. We also evaluate the efficiency of photodo** at different illumination wavelengths, finding that it is strongly correlated with the light absorption by the MoSe_2 layer, and maximizes for excitation on-resonance with the A exciton absorption. This indicates that the photodo** process involves optical absorption by the MoSe_2 channel, in contrast with the mechanism earlier described for graphene/h-BN heterostroctures. △ Less

Submitted 5 March, 2019; originally announced March 2019.

Bilayer h-BN Barriers for Tunneling Contacts in Fully-Encapsulated Monolayer $\mathbf{MoSe_2}$ Field-Effect Transistors

Authors: Talieh S. Ghiasi, Jorge Quereda, Bart J. van Wees

Abstract: The performance of electronic and spintronic devices based on two-dimensional semiconductors (2D SC) is largely dependent on the quality and resistance of the metal/SC electrical contacts, as well as preservation of the intrinsic properties of the SC channel. Direct Metal/SC interaction results in highly resistive contacts due to formation of large Schottky barriers and considerably affects the pr… ▽ More The performance of electronic and spintronic devices based on two-dimensional semiconductors (2D SC) is largely dependent on the quality and resistance of the metal/SC electrical contacts, as well as preservation of the intrinsic properties of the SC channel. Direct Metal/SC interaction results in highly resistive contacts due to formation of large Schottky barriers and considerably affects the properties of the 2D SC. In this work, we address these two important issues in monolayer $\mathrm{MoSe_2}$ Field-Effect transistors (FETs). We encapsulate the $\mathrm{MoSe_2}$ channel with hexagonal Boron Nitride (h-BN), using bilayer h-BN at the metal/SC interface. The bilayer h-BN eliminates the metal/$\mathrm{MoSe_2}$ chemical interactions, preserves the electrical properties of $\mathrm{MoSe_2}$ and reduces the contact resistances by prevention of Fermi-level pinning. We investigate electrical transport in the monolayer $\mathrm{MoSe_2}$ FETs that yields close to intrinsic electron mobilities ($\approx 26\ \mathrm{cm^2 V^{-1} s^{-1}}$) even at room temperature. Moreover, we experimentally study the charge transport through Metal/h-BN/$\mathrm{MoSe_2}$ tunnel contacts and we explicitly show that the dielectric bilayer of h-BN provides highly efficient gating (tuning the Fermi energy) of the $\mathrm{MoSe_2}$ channel at the contact regions even with small biases. Also we provide a theoretical model that allows to understand and reproduce the experimental $I-V$ characteristics of the contacts. These observations give an insight into the electrical behavior of the metal/h-BN/2D SC heterostructure and introduce bilayer h-BN as a suitable choice for high quality tunneling contacts that allows for low energy charge and spin transport. △ Less

Submitted 23 June, 2018; originally announced June 2018.

Comments: 23 pages, 10 figures (including supporting information)

Symmetry regimes for circular photocurrents in monolayer MoSe2

Authors: Jorge Quereda, Talieh S. Ghiasi, Jhih-Shih You, Jeroen van den Brink, Bart J. van Wees, Caspar H. van der Wal

Abstract: In monolayer transition metal dichalcogenides helicity-dependent charge and spin photocurrents can emerge, even without applying any electrical bias, due to circular photogalvanic and photon drag effects. Exploiting such circular photocurrents (CPC) in devices, however, requires better understanding of their behavior and physical origin. Here, we present symmetry, spectral, and electrical characte… ▽ More In monolayer transition metal dichalcogenides helicity-dependent charge and spin photocurrents can emerge, even without applying any electrical bias, due to circular photogalvanic and photon drag effects. Exploiting such circular photocurrents (CPC) in devices, however, requires better understanding of their behavior and physical origin. Here, we present symmetry, spectral, and electrical characteristics of CPC from excitonic interband transitions in a MoSe2 monolayer. The dependence on bias and gate voltages reveals two different CPC contributions, dominant at different voltages and with different dependence on illumination wavelength and incidence angles. We theoretically analyze symmetry requirements for effects that can yield CPC and compare these with the observed angular dependence and symmetries that occur for our device geometry. This reveals that the observed CPC effects require a reduced device symmetry, and that effects due to Berry curvature of the electronic states do not give a significant contribution. △ Less

Submitted 30 March, 2018; v1 submitted 22 March, 2018; originally announced March 2018.

Journal ref: Nature Communications volume 9, Article number: 3346 (2018)

Observation of bright and dark exciton transitions in monolayer MoSe2 by photocurrent spectroscopy

Authors: Jorge Quereda, Talieh S. Ghiasi, Feitze A. van Zwol, Caspar H. van der Wal, Bart J. van Wees

Abstract: We investigate the excitonic transitions in single- and few-layer MoSe2 phototransistors by photocurrent spectroscopy. The measured spectral profiles show a well-defined peak at the optically active (bright) A0 exciton resonance. More interestingly, when a gate voltage is applied to the MoSe2 to bring its Fermi level near the bottom of the conduction band, another prominent peak emerges at an ener… ▽ More We investigate the excitonic transitions in single- and few-layer MoSe2 phototransistors by photocurrent spectroscopy. The measured spectral profiles show a well-defined peak at the optically active (bright) A0 exciton resonance. More interestingly, when a gate voltage is applied to the MoSe2 to bring its Fermi level near the bottom of the conduction band, another prominent peak emerges at an energy 30 meV above the A0 exciton. We attribute this second peak to a gate-induced activation of the spin-forbidden dark exciton transition, AD0. Additionally, we evaluate the thickness-dependent optical bandgap of the fabricated MoSe2 crystals by characterizing their absorption edge. △ Less

Submitted 30 August, 2017; originally announced August 2017.

Journal ref: Jorge Quereda et al 2018 2D Mater. 5 015004

Strain engineering of Schottky barriers in single- and few-layer MoS2 vertical devices

Authors: Jorge Quereda, Juan José Palacios, Nicolás Agräit, Andres Castellanos-Gomez, Gabino Rubio-Bollinger

Abstract: We study the effect of local strain in the electronic transport properties of vertical metal-atomically thin MoS2-metal structures. We use a conductive atomic force microscope tip to apply different load forces to monolayer and few-layer MoS2 crystals deposited onto a conductive indium tin oxide (ITO) substrate while measuring simultaneously the I-V characteristics of the vertical tip/MoS2/ITO str… ▽ More We study the effect of local strain in the electronic transport properties of vertical metal-atomically thin MoS2-metal structures. We use a conductive atomic force microscope tip to apply different load forces to monolayer and few-layer MoS2 crystals deposited onto a conductive indium tin oxide (ITO) substrate while measuring simultaneously the I-V characteristics of the vertical tip/MoS2/ITO structures. The structures show rectifying I-V characteristics, with rectification ratios strongly dependent on the applied load. To understand these results, we compare the experimental I-Vs with a double Schottky barrier model, which is in good agreement with our experimental results and allows us to extract quantitative information about the electronic properties of the tip/MoS2/ITO structures and their dependence on the applied load. Finally, we test the stability of the studied structures using them as mechanically tunable current rectifiers. △ Less

Submitted 24 January, 2017; originally announced January 2017.

Comments: Main text: 14 pages, 4 figures. Supp. Info.: 11 pages, 5 figures. We include a Matlab script to numerically solve the back-to-back diode circuit

Strong quantum confinement effect in the optical properties of ultrathin α-In2Se3

Authors: Jorge Quereda, Robert Biele, Gabino Rubio-Bollinger, Nicolás Agraït, Roberto D'Agosta, Andres Castellanos-Gomez

Abstract: The effect of quantum confinement in the optical absorption spectra of atomically thin α-In2Se3 crystals is studied, observing a huge thickness-dependent shift in the optical band gap of exfoliated α-In2Se3 flakes. The band gap variation reported here is among the largest found in semiconductor crystals and spans a region of the near-UV spectrum uncovered by other 2D semiconductors. The effect of quantum confinement in the optical absorption spectra of atomically thin α-In2Se3 crystals is studied, observing a huge thickness-dependent shift in the optical band gap of exfoliated α-In2Se3 flakes. The band gap variation reported here is among the largest found in semiconductor crystals and spans a region of the near-UV spectrum uncovered by other 2D semiconductors. △ Less

Submitted 18 October, 2016; originally announced October 2016.

Comments: 3 Figures + 6 Supp. Info. figures

Enhanced superconductivity in atomically thin TaS2

Authors: Efrén Navarro-Moratalla, Joshua O. Island, Samuel Mañas-Valero, Elena Pinilla-Cienfuegos, Andres Castellanos-Gomez, Jorge Quereda, Gabino Rubio-Bollinger, Luca Chirolli, Jose Angel Silva-Guillén, Nicolás Agraït, Gary A. Steele, Francisco Guinea, Herre S. J. van der Zant, Eugenio Coronado

Abstract: The ability to exfoliate layered materials down to the single layer limit has opened the opportunity to understand how a gradual reduction in dimensionality affects the properties of bulk materials. Here we use this top-down approach to address the problem of superconductivity in the two-dimensional limit. The transport properties of electronic devices based on 2H tantalum disulfide flakes of diff… ▽ More The ability to exfoliate layered materials down to the single layer limit has opened the opportunity to understand how a gradual reduction in dimensionality affects the properties of bulk materials. Here we use this top-down approach to address the problem of superconductivity in the two-dimensional limit. The transport properties of electronic devices based on 2H tantalum disulfide flakes of different thicknesses are presented. We observe that superconductivity persists down to the thinnest layer investigated (3.5 nm), and interestingly, we find a pronounced enhancement in the critical temperature from 0.5 K to 2.2 K as the layers are thinned down. In addition, we propose a tight-binding model, which allows us to attribute this phenomenon to an enhancement of the effective electron-phonon coupling constant. This work provides evidence that reducing dimensionality can strengthen superconductivity as opposed to the weakening effect that has been reported in other 2D materials so far. △ Less

Submitted 20 April, 2016; v1 submitted 19 April, 2016; originally announced April 2016.

Comments: 54 pages

Journal ref: Nature Communications, 7, 11043 (2016)

Enhanced Visibility of MoS2, MoSe2, WSe2 and Black Phosphorus: Making Optical Identification of 2D Semiconductors Easier

Authors: Gabino Rubio-Bollinger, Ruben Guerrero, David Perez de Lara, Jorge Quereda, Luis Vaquero-Garzon, Nicolas Agraït, Rudolf Bratschitsch, Andres Castellanos-Gomez

Abstract: We explore the use of Si3N4/Si substrates as a substitute of the standard SiO2/Si substrates employed nowadays to fabricate nanodevices based on 2D materials. We systematically study the visibility of several 2D semiconducting materials that are attracting a great deal of interest in nanoelectronics and optoelectronics: MoS2, MoSe2, WSe2 and black phosphorus. We find that the use of Si3N4/Si subst… ▽ More We explore the use of Si3N4/Si substrates as a substitute of the standard SiO2/Si substrates employed nowadays to fabricate nanodevices based on 2D materials. We systematically study the visibility of several 2D semiconducting materials that are attracting a great deal of interest in nanoelectronics and optoelectronics: MoS2, MoSe2, WSe2 and black phosphorus. We find that the use of Si3N4/Si substrates provides an increase of the optical contrast up to a 50%-100% and also the maximum contrast shifts towards wavelength values optimal for human eye detection, making optical identification of 2D semiconductors easier. △ Less

Submitted 17 November, 2015; originally announced November 2015.

Comments: 4 figures + 3 supp.info. figures

Journal ref: Electronics 2015, 4(4), 847-856

Strong modulation of optical properties in black phosphorus through strain-engineered rippling

Authors: Jorge Quereda, Pablo San-José, Vincenzo Parente, Luis Vaquero-Garzon, Aday Molina-Mendoza, Nicolás Agraït, Gabino Rubio-Bollinger, Francisco Guinea, Rafael Roldán, Andres Castellanos-Gomez

Abstract: Controlling the bandgap through local-strain engineering is an exciting avenue for tailoring optoelectronic materials. Two-dimensional crystals are particularly suited for this purpose because they can withstand unprecedented non-homogeneous deformations before rupture: one can literally bend them and fold them up almost like a piece of paper. Here, we study multi-layer black phosphorus sheets sub… ▽ More Controlling the bandgap through local-strain engineering is an exciting avenue for tailoring optoelectronic materials. Two-dimensional crystals are particularly suited for this purpose because they can withstand unprecedented non-homogeneous deformations before rupture: one can literally bend them and fold them up almost like a piece of paper. Here, we study multi-layer black phosphorus sheets subjected to periodic stress to modulate their optoelectronic properties. We find a remarkable shift of the optical absorption band-edge of up to ~0.7 eV between the regions under tensile and compressive stress, greatly exceeding the strain tunability reported for transition metal dichalcogenides. This observation is supported by theoretical models which also predict that this periodic stress modulation can yield to quantum confinement of carriers at low temperatures. The possibility of generating large strain-induced variations in the local density of charge carriers opens the door for a variety of applications including photovoltaics, quantum optics and two-dimensional optoelectronic devices. △ Less

Submitted 21 April, 2016; v1 submitted 3 September, 2015; originally announced September 2015.

Comments: 16 pages main text + 13 pages SI

Spatially resolved optical absorption spectroscopy of single- and few-layer MoS2 by hyperspectral imaging

Authors: Andres Castellanos-Gomez, Jorge Quereda, Herko P. van der Meulen, Nicolás Agraït, Gabino Rubio-Bollinger

Abstract: The possibility of spatially resolving the optical properties of atomically thin materials is especially appealing as they can be modulated at the micro- and nanoscale by reducing their thickness, changing the do** level or applying a mechanical deformation. Therefore, optical spectroscopy techniques with high spatial resolution are necessary to get a deeper insight into the properties of two-di… ▽ More The possibility of spatially resolving the optical properties of atomically thin materials is especially appealing as they can be modulated at the micro- and nanoscale by reducing their thickness, changing the do** level or applying a mechanical deformation. Therefore, optical spectroscopy techniques with high spatial resolution are necessary to get a deeper insight into the properties of two-dimensional materials. Here we study the optical absorption of single- and few-layer molybdenum disulfide (MoS2) in the spectral range from 1.24 eV to 3.22 eV (385 nm to 1000 nm) by develo** a hyperspectral imaging technique that allows one to probe the optical properties with diffraction limited spatial resolution. We find hyperspectral imaging very suited to study indirect bandgap semiconductors, unlike photoluminescence that only provides high luminescence yield for direct gap semiconductors. Moreover, this work opens the door to study the spatial variation of the optical properties of other two-dimensional systems, including non-semiconducting materials where scanning photoluminescence cannot be employed. △ Less

Submitted 3 July, 2015; originally announced July 2015.

Comments: Main text: 4 figures. Supporting information: 4 figures

Single-layer MoS2 roughness and sliding friction quenching by interaction with atomically flat substrates

Authors: Jorge Quereda, Andres Castellanos-Gomez, Nicolás Agraït, Gabino Rubio-Bollinger

Abstract: We experimentally study the surface roughness and the lateral friction force in single-layer MoS2 crystals deposited on different substrates: SiO2, mica and hexagonal boron nitride (h-BN). Roughness and sliding friction measurements are performed by atomic force microscopy (AFM). We find a strong dependence of the MoS2 roughness on the underlying substrate material, being h-BN the substrate which… ▽ More We experimentally study the surface roughness and the lateral friction force in single-layer MoS2 crystals deposited on different substrates: SiO2, mica and hexagonal boron nitride (h-BN). Roughness and sliding friction measurements are performed by atomic force microscopy (AFM). We find a strong dependence of the MoS2 roughness on the underlying substrate material, being h-BN the substrate which better preserves the flatness of the MoS2 crystal. The lateral friction also lowers as the roughness decreases, and attains its lowest value for MoS2 flakes on h-BN substrates. However, it is still higher than for the surface of a bulk MoS2 crystal, which we attribute to the deformation of the flake due to competing tip-to-flake and flake-to-substrate interactions. △ Less

Submitted 8 July, 2014; originally announced July 2014.

Comments: 10 pages, 4 figures

Fast and reliable identification of atomically thin layers of TaSe2 crystals

Authors: Andres Castellanos-Gomez, Efrén Navarro-Moratalla, Guillermo Mokry, Jorge Quereda, Elena Pinilla-Cienfuegos, Nicolás Agraït, Herre S. J. van der Zant, Eugenio Coronado, Gary A. Steele, Gabino Rubio-Bollinger

Abstract: Deposition of clean and defect-free atomically thin two-dimensional crystalline flakes on surfaces by mechanical exfoliation of layered bulk materials has proven to be a powerful technique, but it requires a fast, reliable and non-destructive way to identify the atomically thin flakes among a crowd of thick flakes. In this work, we provide general guidelines to identify ultrathin flakes of TaSe2 b… ▽ More Deposition of clean and defect-free atomically thin two-dimensional crystalline flakes on surfaces by mechanical exfoliation of layered bulk materials has proven to be a powerful technique, but it requires a fast, reliable and non-destructive way to identify the atomically thin flakes among a crowd of thick flakes. In this work, we provide general guidelines to identify ultrathin flakes of TaSe2 by means of optical microscopy and Raman spectroscopy. Additionally, we determine the optimal substrates to facilitate the optical identification of atomically thin TaSe2 crystals. Experimental realization and isolation of ultrathin layers of TaSe2 enables future studies on the role of the dimensionality in interesting phenomena such as superconductivity and charge density waves. △ Less

Submitted 17 February, 2014; v1 submitted 12 February, 2013; originally announced February 2013.

Comments: It includes supporting information

Journal ref: Nano Research 6 (3) 191-199 (2013)