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A high-mobility two-dimensional electron gas at the heteroepitaxial spinel/perovskite complex oxide interface of γ-Al2O3/SrTiO3
Authors:
Y. Z. Chen,
N. Bovet,
F. Trier,
D. V. Christensen,
F. M. Qu,
N. H. Andersen,
T. Kasama,
W. Zhang,
R. Giraud,
J. Dufouleur,
T. S. Jespersen,
J. R. Sun,
A. Smith,
J. Nygård,
L. Lu,
B. Büchner,
B. G. Shen,
S. Linderoth,
N. Pryds
Abstract:
The discovery of two-dimensional electron gases (2DEGs) at the heterointerface between two insulating perovskite-type oxides, such as LaAlO3 and SrTiO3, provides opportunities for a new generation of all-oxide electronic and photonic devices. However, significant improvement of the interfacial electron mobility beyond the current value of approximately 1,000 cm2V-1s-1 (at low temperatures), remain…
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The discovery of two-dimensional electron gases (2DEGs) at the heterointerface between two insulating perovskite-type oxides, such as LaAlO3 and SrTiO3, provides opportunities for a new generation of all-oxide electronic and photonic devices. However, significant improvement of the interfacial electron mobility beyond the current value of approximately 1,000 cm2V-1s-1 (at low temperatures), remains a key challenge for fundamental as well as applied research of complex oxides. Here, we present a new type of 2DEG created at the heterointerface between SrTiO3 and a spinel γ-Al2O3 epitaxial film with excellent quality and compatible oxygen ions sublattices. This spinel/perovskite oxide heterointerface exhibits electron mobilities more than one order of magnitude higher than those of perovskite/perovskite oxide interfaces, and demonstrates unambiguous two-dimensional conduction character as revealed by the observation of quantum magnetoresistance oscillations. Furthermore, we find that the spinel/perovskite 2DEG results from interface-stabilized oxygen vacancies and is confined within a layer of 0.9 nm in proximity to the heterointerface. Our findings pave the way for studies of mesoscopic physics with complex oxides and design of high-mobility all-oxide electronic devices.
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Submitted 1 April, 2013;
originally announced April 2013.
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Gate-Voltage Control of Chemical Potential and Weak Anti-localization in Bismuth Selenide
Authors:
J. Chen,
H. J. Qin,
F. Yang,
J. Liu,
T. Guan,
F. M. Qu,
G. H. Zhang,
J. R. Shi,
X. C. Xie,
C. L. Yang,
K. H. Wu,
Y. Q. Li,
L. Lu
Abstract:
We report that Bi$_2$Se$_3$ thin films can be epitaxially grown on SrTiO$_{3}$ substrates, which allow for very large tunablity in carrier density with a back-gate. The observed low field magnetoconductivity due to weak anti-localization (WAL) has a very weak gate-voltage dependence unless the electron density is reduced to very low values. Such a transition in WAL is correlated with unusual chang…
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We report that Bi$_2$Se$_3$ thin films can be epitaxially grown on SrTiO$_{3}$ substrates, which allow for very large tunablity in carrier density with a back-gate. The observed low field magnetoconductivity due to weak anti-localization (WAL) has a very weak gate-voltage dependence unless the electron density is reduced to very low values. Such a transition in WAL is correlated with unusual changes in longitudinal and Hall resistivities. Our results suggest much suppressed bulk conductivity at large negative gate-voltages and a possible role of surface states in the WAL phenomena. This work may pave a way for realizing three-dimensional topological insulators at ambient conditions.
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Submitted 11 March, 2010; v1 submitted 7 March, 2010;
originally announced March 2010.
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Observations of two-fold shell filling and Kondo effect in a graphene nano-ribbon quantum dot device
Authors:
C. L. Tan,
Z. B. Tan,
K. Wang,
L. Ma,
F. Yang,
F. M. Qu,
J. Chen,
C. L. Yang,
L. Lu
Abstract:
A graphene nanoribbon (GNR) with orientation along its principle axis was obtained through a mechanical tearing process, and a quantum dot device was fabricated from the GNR. We have studied the transport property of the GNR quantum dot device down to dilution refrigerator temperatures. Two-fold charging periodicity was observed in the Coulomb-blockade measurement, signaling a shell-filling proc…
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A graphene nanoribbon (GNR) with orientation along its principle axis was obtained through a mechanical tearing process, and a quantum dot device was fabricated from the GNR. We have studied the transport property of the GNR quantum dot device down to dilution refrigerator temperatures. Two-fold charging periodicity was observed in the Coulomb-blockade measurement, signaling a shell-filling process with broken valley degeneracy. In one of the smaller Coulomb diamonds, Kondo-like resonance were observed, with two conductance peaks displaced symmetrically from the zero bias voltage. The splitting of Kondo resonance at zero magnetic field suggests spin-polarization of the quantum dot, possibly due to the edge states of a zigzag GNR.
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Submitted 29 October, 2009;
originally announced October 2009.
