Charge transport across metal/molecular (alkyl) monolayer-Si junctions is dominated by the LUMO level
Authors:
Omer Yaffe,
Yabing Qi,
Lior Segev,
Luc Scheres,
Sreenivasa Reddy Puniredd,
Tal Ely,
Hossam Haick,
Han Zuilhof,
Leeor Kronik,
Antoine Kahn,
Ayelet Vilan,
David Cahen
Abstract:
We compare the charge transport characteristics of heavy doped p- and n-Si-alkyl chain/Hg junctions. Photoelectron spectroscopy (UPS, IPES and XPS) results for the molecule-Si band alignment at equilibrium show the Fermi level to LUMO energy difference to be much smaller than the corresponding Fermi level to HOMO one. This result supports the conclusion we reach, based on negative differential res…
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We compare the charge transport characteristics of heavy doped p- and n-Si-alkyl chain/Hg junctions. Photoelectron spectroscopy (UPS, IPES and XPS) results for the molecule-Si band alignment at equilibrium show the Fermi level to LUMO energy difference to be much smaller than the corresponding Fermi level to HOMO one. This result supports the conclusion we reach, based on negative differential resistance in an analogous semiconductor-inorganic insulator/metal junction, that for both p- and n-type junctions the energy difference between the Fermi level and LUMO, i.e., electron tunneling, controls charge transport. The Fermi level-LUMO energy difference, experimentally determined by IPES, agrees with the non-resonant tunneling barrier height deduced from the exponential length-attenuation of the current.
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Submitted 26 October, 2011; v1 submitted 20 June, 2011;
originally announced June 2011.
Molecular electronics at Metal / Semiconductor Junctions Si inversion by Sub-nm Molecular Films
Authors:
Omer Yaffe,
Luc Scheres,
Sreenivasa Reddy Puniredd,
Nir Stein,
Ariel Biller,
Rotem Har Lavan,
Hagay Shpaisman,
Han Zuilhof,
Hossam Haick,
David Cahen,
Ayelet Vilan
Abstract:
Electronic transport across n-Si-alkyl monolayer/Hg junctions is, at reverse and low forward bias, independent of alkyl chain-length from 18 down to 1 or 2 carbons! This and further recent results indicate that electron transport is minority, rather than majority carrier-dominated, occurs via generation and recombination, rather than (the earlier assumed) thermionic emission and, as such is rath…
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Electronic transport across n-Si-alkyl monolayer/Hg junctions is, at reverse and low forward bias, independent of alkyl chain-length from 18 down to 1 or 2 carbons! This and further recent results indicate that electron transport is minority, rather than majority carrier-dominated, occurs via generation and recombination, rather than (the earlier assumed) thermionic emission and, as such is rather insensitive to interface properties. The (m)ethyl results show that binding organic molecules directly to semiconductors provides semiconductor/metal interface control options, not accessible otherwise.
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Submitted 22 March, 2009;
originally announced March 2009.