Showing 1–15 of 15 results for author: Puddy, R

Statistical evaluation of 571 GaAs quantum point contact transistors showing the 0.7 anomaly in quantized conductance using millikelvin cryogenic on-chip multiplexing

Authors: Pengcheng Ma, Kaveh Delfanazari, Reuben K. Puddy, Jiahui Li, Moda Cao, Teng Yi, Jonathan P. Griffiths, Harvey E. Beere, David A. Ritchie, Michael J. Kelly, Charles G. Smith

Abstract: The mass production and the practical number of cryogenic quantum devices producible in a single chip are limited to the number of electrical contact pads and wiring of the cryostat or dilution refrigerator. It is, therefore, beneficial to contrast the measurements of hundreds of devices fabricated in a single chip in one cooldown process to promote the scalability, integrability, reliability, and… ▽ More The mass production and the practical number of cryogenic quantum devices producible in a single chip are limited to the number of electrical contact pads and wiring of the cryostat or dilution refrigerator. It is, therefore, beneficial to contrast the measurements of hundreds of devices fabricated in a single chip in one cooldown process to promote the scalability, integrability, reliability, and reproducibility of quantum devices and to save evaluation time, cost and energy. Here, we use a cryogenic on-chip multiplexer architecture and investigate the statistics of the 0.7 anomaly observed on the first three plateaus of the quantized conductance of semiconductor quantum point contact (QPC) transistors. Our single chips contain 256 split gate field effect QPC transistors (QFET) each, with two 16-branch multiplexed source-drain and gate pads, allowing individual transistors to be selected, addressed and controlled through an electrostatic gate voltage process. A total of 1280 quantum transistors with nano-scale dimensions are patterned in 5 different chips of GaAs heterostructures. From the measurements of 571 functioning QPCs taken at temperatures T= 1.4 K and T= 40 mK, it is found that the spontaneous polarisation model and Kondo effect do not fit our results. Furthermore, some of the features in our data largely agreed with van Hove model with short-range interactions. Our approach provides further insight into the quantum mechanical properties and microscopic origin of the 0.7 anomaly in QPCs, paving the way for the development of semiconducting quantum circuits and integrated cryogenic electronics, for scalable quantum logic control, readout, synthesis, and processing applications. △ Less

Submitted 10 April, 2024; originally announced April 2024.

Quantized conductance in split gate superconducting quantum point contacts with InGaAs semiconducting two-dimensional electron systems

Authors: Kaveh Delfanazari, Jiahui Li, Yusheng Xiong, Pengcheng Ma, Reuben K. Puddy, Teng Yi, Ian Farrer, Sachio Komori, Jason W. A. Robinson, Llorenc Serra, David A. Ritchie, Michael J. Kelly, Hannah J. Joyce, Charles G. Smith

Abstract: Quantum point contact or QPC -- a constriction in a semiconducting two-dimensional (2D) electron system with a quantized conductance -- has been found as the building block of novel spintronic, and topological electronic circuits. They can also be used as readout electronic, charge sensor or switch in quantum nanocircuits. A short and impurity-free constriction with superconducting contacts is a C… ▽ More Quantum point contact or QPC -- a constriction in a semiconducting two-dimensional (2D) electron system with a quantized conductance -- has been found as the building block of novel spintronic, and topological electronic circuits. They can also be used as readout electronic, charge sensor or switch in quantum nanocircuits. A short and impurity-free constriction with superconducting contacts is a Cooper pairs QPC analogue known as superconducting quantum point contact (SQPC). The technological development of such quantum devices has been prolonged due to the challenges of maintaining their geometrical requirement and near-unity superconductor-semiconductor interface transparency. Here, we develop advanced nanofabrication, material and device engineering techniques and report on an innovative realisation of nanoscale SQPC arrays with split gate technology in semiconducting 2D electron systems, exploiting the special gate tunability of the quantum wells, and report the first experimental observation of conductance quantization in hybrid InGaAs-Nb SQPCs. We observe reproducible quantized conductance at zero magnetic fields in multiple quantum nanodevices fabricated in a single chip and systematically investigate the quantum transport of SQPCs at low and high magnetic fields for their potential applications in quantum metrology, for extremely accurate voltage standards, and fault-tolerant quantum technologies. △ Less

Submitted 18 December, 2023; originally announced December 2023.

Large-scale on-chip integration of gate-voltage addressable hybrid superconductor-semiconductor quantum wells field effect nano-switch arrays

Authors: Kaveh Delfanazari, Jiahui Li, Peng Ma, Reuben K. Puddy, Teng Yi, Yusheng Xiong, Ian Farrer, Sachio Komori, Jason Robinson, David A. Ritchie, Michael J. Kelly, Hannah J. Joyce, Charles G. Smith

Abstract: Stable, reproducible, scalable, addressable, and controllable hybrid superconductor-semiconductor (S-Sm) junctions and switches are key circuit elements and building blocks of gate-based quantum processors. The electrostatic field effect produced by the split gate voltages facilitates the realisation of nano-switches that can control the conductance or current in the hybrid S-Sm circuits based on… ▽ More Stable, reproducible, scalable, addressable, and controllable hybrid superconductor-semiconductor (S-Sm) junctions and switches are key circuit elements and building blocks of gate-based quantum processors. The electrostatic field effect produced by the split gate voltages facilitates the realisation of nano-switches that can control the conductance or current in the hybrid S-Sm circuits based on 2D semiconducting electron systems. Here, we experimentally demonstrate a novel realisation of large-scale scalable, and gate voltage controllable hybrid field effect quantum chips. Each chip contains arrays of split gate field effect hybrid junctions, that work as conductance switches, and are made from In0.75Ga0.25As quantum wells integrated with Nb superconducting electronic circuits. Each hybrid junction in the chip can be controlled and addressed through its corresponding source-drain and two global split gate contact pads that allow switching between their (super)conducting and insulating states. We fabricate a total of 18 quantum chips with 144 field effect hybrid Nb- In0.75Ga0.25As 2DEG-Nb quantum wires and investigate the electrical response, switching voltage (on/off) statistics, quantum yield, and reproducibility of several devices at cryogenic temperatures. The proposed integrated quantum device architecture allows control of individual junctions in a large array on a chip useful for the development of emerging cryogenic nanoelectronics circuits and systems for their potential applications in fault-tolerant quantum technologies. △ Less

Submitted 10 July, 2023; originally announced July 2023.

Experimental evidence for topological phases in the magnetoconductance of 2DEG-based hybrid junctions

Authors: Kaveh Delfanazari, Llorenc Serra, Pengcheng Ma, Reuben K. Puddy, Teng Yi, Moda Cao, Yilmaz Gul, Ian Farrer, David A. Ritchie, Hannah J. Joyce, Michael J. Kelly, Charles G. Smith

Abstract: While the application of out-of-plane magnetic fields was, so far, believed to be detrimental for the formation of Majorana phases in artificially engineered hybrid superconducting-semiconducting junctions, several recent theoretical studies have found it indeed useful in establishing such topological phases 1-5. Majorana phases emerge as quantized plateaus in the magnetoconductance of the hybrid… ▽ More While the application of out-of-plane magnetic fields was, so far, believed to be detrimental for the formation of Majorana phases in artificially engineered hybrid superconducting-semiconducting junctions, several recent theoretical studies have found it indeed useful in establishing such topological phases 1-5. Majorana phases emerge as quantized plateaus in the magnetoconductance of the hybrid junctions based on two-dimensional electron gases (2DEG) under fully out-of-plane magnetic fields. The large transverse Rashba spin-orbit interaction in 2DEG, together with a strong magneto-orbital effect, yield topological phase transitions to nontrivial phases hosting Majorana modes. Such Majorana modes are formed at the ends of 2DEG-based wires with a hybrid superconductor-semiconductor integrity. Here, we report on the experimental observation of such topological phases in Josephson junctions, based on In0.75Ga0.25As 2DEG, by swee** out-of-plane magnetic fields of as small as 0 < B(mT) < 100 and probing the conductance to highlight the characteristic quantized magnetoconductance plateaus. Our approaches towards (i) creation and detection of topological phases in small out-of-plane magnetic fields, and (ii) integration of an array of topological Josephson junctions on a single chip pave the ways for the development of scalable quantum integrated circuits for their potential applications in fault-tolerant quantum processing and computing. △ Less

Submitted 8 August, 2020; v1 submitted 4 July, 2020; originally announced July 2020.

Comments: 32 pages, 12 figures

Engineering of Microfabricated Ion Traps and Integration of Advanced On-Chip Features

Authors: Zak David Romaszko, Seokjun Hong, Martin Siegele, Reuben Kahan Puddy, Foni Raphaël Lebrun-Gallagher, Sebastian Weidt, Winfried Karl Hensinger

Abstract: Trapped atomic ions are a proven and powerful tool for the fundamental research of quantum physics. They have emerged in recent years as one of the most promising candidates for several practical technologies including quantum computers, quantum simulators, atomic clocks, mass spectrometers and quantum sensors. Advanced fabrication techniques, taken from established and nascent disciplines, are be… ▽ More Trapped atomic ions are a proven and powerful tool for the fundamental research of quantum physics. They have emerged in recent years as one of the most promising candidates for several practical technologies including quantum computers, quantum simulators, atomic clocks, mass spectrometers and quantum sensors. Advanced fabrication techniques, taken from established and nascent disciplines, are being deployed to create novel, reliable devices with a view to large scale integration and commercial compatibility. This review will cover the fundamentals of ion trap** before proceeding with a discussion of the design of ion traps for the aforementioned applications. We will analyse current microfabrication techniques that are being utilised, as well as various considerations which motivate the choice of materials and processes. Finally, we discuss current efforts to include advanced, on-chip features into next generation ion traps. △ Less

Submitted 11 May, 2020; v1 submitted 1 August, 2019; originally announced August 2019.

Experimental realization of a quantum dot energy harvester

Authors: G. Jaliel, R. K. Puddy, R. Sánchez, A. N. Jordan, B. Sothmann, I. Farrer, J. P. Griffiths, D. A. Ritchie, C. G. Smith

Abstract: We demonstrate experimentally an autonomous nanoscale energy harvester that utilises the physics of resonant tunnelling quantum dots. Gate defined quantum dots on GaAs/AlGaAs high-electron-mobility transistors are placed on either side of a hot electron reservoir. The discrete energy levels of the quantum dots are tuned to be aligned with low energy electrons on one side and high energy electrons… ▽ More We demonstrate experimentally an autonomous nanoscale energy harvester that utilises the physics of resonant tunnelling quantum dots. Gate defined quantum dots on GaAs/AlGaAs high-electron-mobility transistors are placed on either side of a hot electron reservoir. The discrete energy levels of the quantum dots are tuned to be aligned with low energy electrons on one side and high energy electrons on the other side of the hot reservoir. The quantum dots thus act as energy filters and allow for the conversion of heat from the cavity into electrical power. This energy harvester device, measured at an estimated base temperature of 75 mK in a He3/He4 dilution refrigerator, can generate a thermal power of 0.13 fW when the temperature difference across each dot is about 67 mK. △ Less

Submitted 1 October, 2019; v1 submitted 29 January, 2019; originally announced January 2019.

Journal ref: Phys. Rev. Lett. 123, 117701 (2019)

Observation of Coulomb blockade in nanostructured epitaxial bilayer graphene on SiC

Authors: Cassandra Chua, Arseniy Lartsev, **ggao Sui, Vishal Panchal, Reuben Puddy, Carly Richardson, Charles G. Smith, T. J. B. M. Janssen, Alexander Tzalenchuk, Rositsa Yakimova, Sergey Kubatkin, Malcolm R. Connolly

Abstract: We study electron transport in nanostructures patterned in bilayer graphene patches grown epitaxially on SiC as a function of do**, magnetic field, and temperature. Away from charge neutrality transport is only weakly modulated by changes in carrier concentration induced by a local side-gate. At low n-type do** close to charge neutrality, electron transport resembles that in exfoliated graphen… ▽ More We study electron transport in nanostructures patterned in bilayer graphene patches grown epitaxially on SiC as a function of do**, magnetic field, and temperature. Away from charge neutrality transport is only weakly modulated by changes in carrier concentration induced by a local side-gate. At low n-type do** close to charge neutrality, electron transport resembles that in exfoliated graphene nanoribbons and is well described by tunnelling of single electrons through a network of Coulomb-blockaded islands. Under the influence of an external magnetic field, Coulomb blockade resonances fluctuate around an average energy and the gap shrinks as a function of magnetic field. At charge neutrality, however, conduction is less insensitive to external magnetic fields. In this regime we also observe a stronger suppression of the conductance below $T^*$, which we interpret as a sign of broken interlayer symmetry or strong fluctuations in the edge/potential disorder. △ Less

Submitted 31 March, 2017; originally announced March 2017.

Unravelling Quantum Dot Array Simulators via Singlet-Triplet Measurements

Authors: Johnnie Gray, Abolfazl Bayat, Reuben K. Puddy, Charles G. Smith, Sougato Bose

Abstract: Recently, singlet-triplet measurements in double dots have emerged as a powerful tool in quantum information processing. In parallel, quantum dot arrays are being envisaged as analog quantum simulators of many-body models. Thus motivated, we explore the potential of the above singlet-triplet measurements for probing and exploiting the ground-state of a Heisenberg spin chain in such a quantum simul… ▽ More Recently, singlet-triplet measurements in double dots have emerged as a powerful tool in quantum information processing. In parallel, quantum dot arrays are being envisaged as analog quantum simulators of many-body models. Thus motivated, we explore the potential of the above singlet-triplet measurements for probing and exploiting the ground-state of a Heisenberg spin chain in such a quantum simulator. We formulate an efficient protocol to discriminate the achieved many-body ground-state with other likely states. Moreover, the transition between quantum phases, arising from the addition of frustrations in a $J_1-J_2$ model, can be systematically explored using the same set of measurements. We show that the proposed measurements have an application in producing long distance heralded entanglement between well separated quantum dots. Relevant noise sources, such as non-zero temperatures and nuclear spin interactions, are considered. △ Less

Submitted 22 November, 2016; v1 submitted 29 June, 2016; originally announced June 2016.

Comments: v2: 10 pages, 9 figures, revisions to text and references added. Section on imperfect couplings added

Journal ref: Phys. Rev. B 94, 195136 (2016)

Multiplexed Charge-locking Device for Large Arrays of Quantum Devices

Authors: R. K. Puddy, L. W Smith, H. Al-Taie, C. H. Chong, I. Farrer, J. P. Griffiths, D. A. Ritchie, M. J. Kelly, M. Pepper, C. G. Smith

Abstract: We present a method of forming and controlling large arrays of gate-defined quantum devices. The method uses a novel, on-chip, multiplexed charge-locking system and helps to overcome the restraints imposed by the number of wires available in cryostat measurement systems. Two device innovations are introduced. Firstly, a multiplexer design which utilises split gates to allow the multiplexer to divi… ▽ More We present a method of forming and controlling large arrays of gate-defined quantum devices. The method uses a novel, on-chip, multiplexed charge-locking system and helps to overcome the restraints imposed by the number of wires available in cryostat measurement systems. Two device innovations are introduced. Firstly, a multiplexer design which utilises split gates to allow the multiplexer to divide three or more ways at each branch. Secondly we describe a device architecture that utilises a multiplexer-type scheme to lock charge onto gate electrodes. The design allows access to and control of gates whose total number exceeds that of the available electrical contacts and enables the formation, modulation and measurement of large arrays of quantum devices. We fabricate devices utilising these innovations on n-type GaAs/AlGaAs substrates and investigate the stability of the charge locked on to the gates. Proof-of-concept is shown by measurement of the Coulomb blockade peaks of a single quantum dot formed by a floating gate in the device. The floating gate is seen to drift by approximately one Coulomb oscillation per hour. △ Less

Submitted 21 August, 2014; v1 submitted 12 August, 2014; originally announced August 2014.

Comments: 5 pages, 7 figures

Direct Imaging of Coherent Quantum Transport in Graphene Heterojunctions

Authors: E. D. Herbschleb, R. K. Puddy, P. Marconcini, J. P. Griffiths, G. A. C. Jones, M. Macucci, C. G. Smith, M. R. Connolly

Abstract: We fabricate a graphene p-n-p heterojunction and exploit the coherence of weakly-confined Dirac quasiparticles to resolve the underlying scattering potential using low temperature scanning gate microscopy. The tip-induced perturbation to the heterojunction modifies the condition for resonant scattering, enabling us to detect localized Fabry-Perot cavities from the focal point of halos in scanning… ▽ More We fabricate a graphene p-n-p heterojunction and exploit the coherence of weakly-confined Dirac quasiparticles to resolve the underlying scattering potential using low temperature scanning gate microscopy. The tip-induced perturbation to the heterojunction modifies the condition for resonant scattering, enabling us to detect localized Fabry-Perot cavities from the focal point of halos in scanning gate images. In addition to halos over the bulk we also observe ones spatially registered to the physical edge of the graphene. Guided by quantum transport simulations we attribute these to modified resonant scattering at the edges within elongated cavities that form due to focusing of the electrostatic field. △ Less

Submitted 8 August, 2014; originally announced August 2014.

Comments: 8 pages, 6 figures, includes supplementary information

Journal ref: Phys. Rev. B 92, 125414 (2015)

Transport Spectroscopy of a Graphene Quantum Dot Fabricated by Atomic Force Microscope Nanolithography

Authors: R. K. Puddy, C. J. Chua, M. R. Buitelaar

Abstract: We report low-temperature transport spectroscopy of a graphene quantum dot fabricated by atomic force microscope nanolithography. The excellent spatial resolution of the atomic force microscope allows us to reliably fabricate quantum dots with short constrictions of less than 15 nm in length. Transport measurements demonstrate that the device is dominated by a single quantum dot over a wide gate r… ▽ More We report low-temperature transport spectroscopy of a graphene quantum dot fabricated by atomic force microscope nanolithography. The excellent spatial resolution of the atomic force microscope allows us to reliably fabricate quantum dots with short constrictions of less than 15 nm in length. Transport measurements demonstrate that the device is dominated by a single quantum dot over a wide gate range. The electron spin system of the quantum dot is investigated by applying an in-plane magnetic field. The results are consistent with a Lande g-factor of 2 but no regular spin filling sequence is observed, most likely due to disorder. △ Less

Submitted 29 November, 2013; originally announced November 2013.

Journal ref: Appl. Phys. Lett. 103, 183117 (2013)

Non-Ohmic behavior of carrier transport in highly disordered graphene

Authors: Shun-Tsung Lo, Chiashain Chuang, R. K. Puddy, T. -M. Chen, C. G. Smith, C. -T. Liang

Abstract: We report measurements of disordered graphene probed by both a high electric field and a high magnetic field. By apply a high source-drain voltage Vsd, we are able to study the current-voltage relation I-Vsd of our device. With increasing Vsd, a crossover from the linear I-Vsd regime to the non-linear one, and eventually to activationless-hop** transport occurs. In the activationless-hop** reg… ▽ More We report measurements of disordered graphene probed by both a high electric field and a high magnetic field. By apply a high source-drain voltage Vsd, we are able to study the current-voltage relation I-Vsd of our device. With increasing Vsd, a crossover from the linear I-Vsd regime to the non-linear one, and eventually to activationless-hop** transport occurs. In the activationless-hop** regime, the importance of Coulomb interactions between charged carriers is demonstrated. Moreover, we show that delocalization of carriers which are strongly localized at low T and at small Vsd occurs with the presence of high electric field and perpendicular magnetic field.. △ Less

Submitted 26 October, 2013; v1 submitted 22 October, 2013; originally announced October 2013.

Comments: Reported by nanotechweb.org. Two references added

Report number: Nanotechnology 24, 165201 (2013)

Unraveling quantum Hall breakdown in bilayer graphene with scanning gate microscopy

Authors: M. R. Connolly, R. K. Puddy, D. Logoteta, P. Marconcini, M. Roy, J. Griffths, G. A. C. Jones, P. Maksym, M. Macucci, C. G. Smith

Abstract: We use low-temperature scanning gate microscopy (SGM) to investigate the breakdown of the quantum Hall regime in an exfoliated bilayer graphene flake. SGM images captured during breakdown exhibit intricate patterns of "hotspots" where the conductance is strongly affected by the presence of the tip. Our results are well described by a model based on quantum percolation which relates the points of h… ▽ More We use low-temperature scanning gate microscopy (SGM) to investigate the breakdown of the quantum Hall regime in an exfoliated bilayer graphene flake. SGM images captured during breakdown exhibit intricate patterns of "hotspots" where the conductance is strongly affected by the presence of the tip. Our results are well described by a model based on quantum percolation which relates the points of high responsivity to tip-induced scattering between localized Landau levels. △ Less

Submitted 19 January, 2012; originally announced January 2012.

Comments: 6 pages, 4 figures

Journal ref: Nano Letters 12 (11) 5448 (2012)

Reading and writing charge on graphene devices

Authors: M. R. Connolly, E. D. Herbschleb, R. K. Puddy, M. Roy, D. Anderson, G. A. C. Jones, P. Maksym, C. G. Smith

Abstract: We use a combination of charge writing and scanning gate microscopy to map and modify the local charge neutrality point of graphene field-effect devices. We give a demonstration of the technique by writing remote charge in a thin dielectric layer over the graphene-metal interface and detecting the resulting shift in local charge neutrality point. We perform electrostatic simulations to characteriz… ▽ More We use a combination of charge writing and scanning gate microscopy to map and modify the local charge neutrality point of graphene field-effect devices. We give a demonstration of the technique by writing remote charge in a thin dielectric layer over the graphene-metal interface and detecting the resulting shift in local charge neutrality point. We perform electrostatic simulations to characterize the gating effect of a realistic scanning probe tip on a graphene bilayer and find a good agreement with the experimental results. △ Less

Submitted 2 November, 2011; originally announced November 2011.

Journal ref: Appl. Phys. Lett. 101, 023505 (2012)

Atomic force microscope nanolithography of graphene: cuts, pseudo-cuts and tip current measurements

Authors: R. K. Puddy, P. H. Scard, D. Tyndall, M. R. Connolly, C. G. Smith, G. A. C. Jones, A. Lombardo, A. C. Ferrari, M. R. Buitelaar

Abstract: We investigate atomic force microscope nanolithography of single and bilayer graphene. In situ tip current measurements show that cutting of graphene is not current driven. Using a combination of transport measurements and scanning electron microscopy we show that, while indentations accompanied by tip current appear in the graphene lattice for a range of tip voltages, real cuts are characterized… ▽ More We investigate atomic force microscope nanolithography of single and bilayer graphene. In situ tip current measurements show that cutting of graphene is not current driven. Using a combination of transport measurements and scanning electron microscopy we show that, while indentations accompanied by tip current appear in the graphene lattice for a range of tip voltages, real cuts are characterized by a strong reduction of the tip current above a threshold voltage. The reliability and flexibility of the technique is demonstrated by the fabrication, measurement, modification and re-measurement of graphene nanodevices with resolution down to 15 nm. △ Less

Submitted 14 February, 2011; originally announced February 2011.

Journal ref: Appl. Phys. Lett. 98, 133120 (2011)