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Study of the Two-Gap Superconductivity in GdO(F)FeAs by ScS-Andreev Spectroscopy
Authors:
T. E. Shanygina,
Ya. G. Ponomarev,
S. A. Kuzmichev,
M. G. Mikheev,
S. N. Tchesnokov,
O. E. Omel'yanovsky,
A. V. Sadakov,
Yu. F. Eltsev,
V. M. Pudalov,
A. S. Usol'tsev,
E. P. Khlybov,
L. F. Kulikova
Abstract:
Current-voltage characteristics and dynamic conductance of the superconductor - constriction - superconductor junctions in GdO(F)FeAs polycrystalline samples with critical temperatures Tc^local = 46 - 53 K were investigated. Two superconducting gaps, the large Delta_L = 10.5 +- 2 meV, and the small one Delta_S = 2.3 +- 0.4 meV were clearly observed at T = 4.2 K. The 2Delta_L/kTc^local = 5.5 +- 1 r…
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Current-voltage characteristics and dynamic conductance of the superconductor - constriction - superconductor junctions in GdO(F)FeAs polycrystalline samples with critical temperatures Tc^local = 46 - 53 K were investigated. Two superconducting gaps, the large Delta_L = 10.5 +- 2 meV, and the small one Delta_S = 2.3 +- 0.4 meV were clearly observed at T = 4.2 K. The 2Delta_L/kTc^local = 5.5 +- 1 ratio gives support to the strong coupling mechanism which is responsible for the high Tc value. Temperature dependence of the large gap Delta_L(T) indicates the presence of intrinsic proximity effect (in k-space) between two superconducting condensates.
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Submitted 18 May, 2012;
originally announced May 2012.
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Observation of Multiple Superconducting Gaps in the Infrared Reflectivity Spectra of Ba(Fe0.9Co0.1)2As2
Authors:
Yu. A. Aleshchenko,
A. V. Muratov,
V. M. Pudalov,
E. S. Zhukova,
B. P. Gorshunov,
F. Kurth,
K. lida
Abstract:
The results of infrared reflectivity measurements for the iron-based high-temperature superconductor Ba(Fe0.9Co0.1)2As2 are reported. The reflectivity is found to be close to unity at frequencies w lower than 2Delta/h (2Delta is the superconducting gap and h is Planck's constant). This is evidence for the s+/- or s+/+ symmetry of the superconducting order parameter in the studied compound. The inf…
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The results of infrared reflectivity measurements for the iron-based high-temperature superconductor Ba(Fe0.9Co0.1)2As2 are reported. The reflectivity is found to be close to unity at frequencies w lower than 2Delta/h (2Delta is the superconducting gap and h is Planck's constant). This is evidence for the s+/- or s+/+ symmetry of the superconducting order parameter in the studied compound. The infrared reflectivity spectra of Ba(Fe0.9Co0.1)2As2 manifest opening of several superconducting gaps at temperatures lower than critical Tc.
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Submitted 11 January, 2012; v1 submitted 20 December, 2011;
originally announced December 2011.
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Thermodynamic magnetization of two-dimensional electron gas measured over wide range of densities
Authors:
M. Reznikov,
A. Yu. Kuntsevich,
N. Teneh,
V. M. Pudalov
Abstract:
We report measurements of dm/dn in Si MOSFET, where m is the magnetization of the two-dimensional electron gas and n is its density. We extended the density range of measurements from well in the metallic to deep in the insulating region. The paper discusses in detail the conditions under which this extension is justified, as well as the corrections one should make to extract dm/dn properly. At lo…
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We report measurements of dm/dn in Si MOSFET, where m is the magnetization of the two-dimensional electron gas and n is its density. We extended the density range of measurements from well in the metallic to deep in the insulating region. The paper discusses in detail the conditions under which this extension is justified, as well as the corrections one should make to extract dm/dn properly. At low temperatures, dm/dn was found to be strongly nonlinear already in weak magnetic fields, on a scale much smaller than the characteristic scales, expected for interacting two-dimensional electron gas. Surprisingly, this nonlinear behavior exists both in the dielectric, and in the metallic region. These observations, we believe, provide evidence for strong coupling of the itinerant and localized electrons in Si-MOSFET.
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Submitted 7 March, 2011;
originally announced March 2011.
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Observation of Multi-Gap Superconductivity in GdO(F)FeAs by Andreev Spectroscopy
Authors:
T. E. Shanygina,
Ya. G. Ponomarev,
S. A. Kuzmichev,
M. G. Mikheev,
S. N. Tchesnokov,
O. E. Omel'yanovskii,
A. V. Sadakov,
Yu. F. Eltsev,
A. S. Dormidontov,
V. M. Pudalov,
A. S. Usol'tsev,
E. P. Khlybov
Abstract:
We have studied current-voltage characteristics of Andreev contacts in polycrystalline GdO$_{0.88}$F$_{0.12}$FeAs samples with bulk critical temperature ${T_c}$ = (52.5 \pm 1)K using break-junction technique. The data obtained cannot be described within the single-gap approach and suggests the existence of a multi-gap superconductivity in this compound. The large and small superconducting gap valu…
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We have studied current-voltage characteristics of Andreev contacts in polycrystalline GdO$_{0.88}$F$_{0.12}$FeAs samples with bulk critical temperature ${T_c}$ = (52.5 \pm 1)K using break-junction technique. The data obtained cannot be described within the single-gap approach and suggests the existence of a multi-gap superconductivity in this compound. The large and small superconducting gap values estimated at T = 4.2K are ΔL = 10.5 \pm 2 meV and ΔS = 2.3 \pm 0.4 meV, respectively.
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Submitted 12 January, 2011; v1 submitted 20 December, 2010;
originally announced December 2010.
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Anisotropy of the Spin Density Wave Onset for (TMTSF)_2PF_6 in Magnetic Field
Authors:
Ya. A. Gerasimenko,
V. A. Prudkoglyad,
A. V. Kornilov,
V. M. Pudalov,
V. N. Zverev,
A. -K. Klehe,
J. S. Qualls
Abstract:
In order to study the spin density wave transition temperature (T_SDW) in (TMTSF)_2PF_6 as a function of magnetic field, we measured the magnetoresistance R_zz in fields up to 19 T. Measurements were performed for three field orientations B||a, b' and c* at ambient pressure and at P = 5 kbar, that is nearly the critical pressure. For B||c* orientation we observed quadratic field dependence of T_…
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In order to study the spin density wave transition temperature (T_SDW) in (TMTSF)_2PF_6 as a function of magnetic field, we measured the magnetoresistance R_zz in fields up to 19 T. Measurements were performed for three field orientations B||a, b' and c* at ambient pressure and at P = 5 kbar, that is nearly the critical pressure. For B||c* orientation we observed quadratic field dependence of T_SDW in agreement with theory and with previous experiments. For B||b' and B||a orientations we have found no shift in T_SDW within 0.05 K, both at P=0 and P=5 kbar. This result is also consistent with theoretical predictions.
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Submitted 12 November, 2009;
originally announced November 2009.
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Thermodynamic magnetization of a strongly interacting two-dimensional system
Authors:
N. Teneh,
A. Yu. Kuntsevich,
V. M. Pudalov,
T. M. Klapwijk,
M. Reznikov
Abstract:
We report thermodynamic magnetization measurements of a 2-dimensional electron gas for several high mobility Si-MOSFETs. The low-temperature magnetization is shown to be strongly sub-linear function of the magnetic field. The susceptibility determined from the zero-field slope diverges as 1/T^α, with α=2.2-2.6 even at high electron densities, in apparent contradiction with the Fermi-liquid pictu…
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We report thermodynamic magnetization measurements of a 2-dimensional electron gas for several high mobility Si-MOSFETs. The low-temperature magnetization is shown to be strongly sub-linear function of the magnetic field. The susceptibility determined from the zero-field slope diverges as 1/T^α, with α=2.2-2.6 even at high electron densities, in apparent contradiction with the Fermi-liquid picture.
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Submitted 30 October, 2009;
originally announced October 2009.
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Magnetic and Superconducting Properties of FeAs-based High-Tc Superconductors with Gd
Authors:
E. P. Khlybov,
O. E. Omelyanovsky,
A. Zaleski,
A. V. Sadakov,
D. R. Gizatulin,
L. F. Kulikova,
I. E. Kostyleva,
V. M. Pudalov
Abstract:
We report on successful synthesis under high pressure of a series of polycrystalline GdFeAs O_{1-x}F_x high-Tc superconductors with different oxygen deficiency x=0.12 - 0.16 and also with no fluorine. We have found that the high-pressure synthesis technique is crucial for obtaining almost single-phase superconducting materials: by synthesizing the same compounds with no pressure in ampoules we o…
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We report on successful synthesis under high pressure of a series of polycrystalline GdFeAs O_{1-x}F_x high-Tc superconductors with different oxygen deficiency x=0.12 - 0.16 and also with no fluorine. We have found that the high-pressure synthesis technique is crucial for obtaining almost single-phase superconducting materials: by synthesizing the same compounds with no pressure in ampoules we obtained non-superconducting materials with an admixture of incidental phases. Critical temperature for all the materials was in the range 40 to 53K. The temperature derivative of the critical field dHc2/dT is remarkably high, indicating potentially high value of the second critical field Hc2 ~ 130T.
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Submitted 9 October, 2009; v1 submitted 10 September, 2009;
originally announced September 2009.
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Non-monotonic magnetoresistance of two-dimensional electron systems in the ballistic regime
Authors:
A. Yu. Kuntsevich,
G. M. Minkov,
A. A. Sherstobitov,
V. M. Pudalov
Abstract:
We report experimental observations of a novel magnetoresistance (MR) behavior of two-dimensional electron systems in perpendicular magnetic field in the ballistic regime, for k_BTτ/\hbar>1. The MR grows with field and exhibits a maximum at fields B>1/μ, where μis the electron mobility. As temperature increases the magnitude of the maximum grows and its position moves to higher fields. This effe…
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We report experimental observations of a novel magnetoresistance (MR) behavior of two-dimensional electron systems in perpendicular magnetic field in the ballistic regime, for k_BTτ/\hbar>1. The MR grows with field and exhibits a maximum at fields B>1/μ, where μis the electron mobility. As temperature increases the magnitude of the maximum grows and its position moves to higher fields. This effect is universal: it is observed in various Si- and GaAs- based two-dimensional electron systems. We compared our data with recent theory based on the Kohn anomaly modification in magnetic field, and found qualitative similarities and discrepancies.
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Submitted 10 February, 2009;
originally announced February 2009.
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Interaction Effects in Conductivity of a Two-Valley Electron System in High-Mobility Si Inversion Layers
Authors:
N. N. Klimov,
D. A. Knyazev,
O. E. Omel'yanovskii,
V. M. Pudalov,
H. Kojima,
M. E. Gershenson
Abstract:
We have measured the conductivity of high-mobility (001) Si metal-oxide-semiconductor field effect transistors (MOSFETs) over wide ranges of electron densities n=(1.8-15)x10^11cm^2, temperatures T=30mK-4.2K, and in-plane magnetic fields B=0-5T. The experimental data have been analyzed using the theory of interaction effects in the conductivity of disordered 2D systems. The parameters essential f…
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We have measured the conductivity of high-mobility (001) Si metal-oxide-semiconductor field effect transistors (MOSFETs) over wide ranges of electron densities n=(1.8-15)x10^11cm^2, temperatures T=30mK-4.2K, and in-plane magnetic fields B=0-5T. The experimental data have been analyzed using the theory of interaction effects in the conductivity of disordered 2D systems. The parameters essential for comparison with the theory, such as the intervalley scattering time and valley splitting, have been measured or evaluated in independent experiments. The observed behavior of the conductivity, including its quasi-linear increase with decreasing T down to ~0.4K and its downturn at lower temperatures, is in agreement with the theory. The values of the Fermi- liquid parameter obtained from the comparison agree with the corresponding values extracted from the analysis of Shubnikov-de Haas oscillations based on the theory of magnetooscillations in interacting 2D systems.
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Submitted 16 September, 2008;
originally announced September 2008.
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Metal-Insulator Transition in 2D: Experimental Test of the Two-Parameter Scaling
Authors:
D. A. Knyazev,
O. E. Omel'yanovskii,
V. M. Pudalov,
I. S. Burmistrov
Abstract:
We report a detailed scaling analysis of resistivity ρ(T,n) measured for several high-mobility 2D electron systems in the vicinity of the 2D metal-insulator transition. We analyzed the data using the two parameter scaling approach and general scaling ideas. This enables us to determine the critical electron density, two critical indices, and temperature dependence for the separatrix in the self-…
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We report a detailed scaling analysis of resistivity ρ(T,n) measured for several high-mobility 2D electron systems in the vicinity of the 2D metal-insulator transition. We analyzed the data using the two parameter scaling approach and general scaling ideas. This enables us to determine the critical electron density, two critical indices, and temperature dependence for the separatrix in the self-consistent manner. In addition, we reconstruct the empirical scaling function describing a two-parameter surface which fits well the ρ(T,n) data.
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Submitted 12 February, 2008;
originally announced February 2008.
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Intervalley scattering and weak localization in Si-based two-dimensional structures
Authors:
A. Yu. Kuntsevich,
N. N. Klimov,
S. A. Tarasenko,
N. S. Averkiev,
V. M. Pudalov,
H. Kojima,
M. E. Gershenson
Abstract:
We have measured the weak localization magnetoresistance in (001)-oriented Si MOS structures with a wide range of mobilities. For the quantitative analysis of the data, we have extended the theory of weak-localization corrections in the ballistic regime to the system with two equivalent valleys in electron spectrum. This theory describes the observed magnetoresistance and allows the extraction o…
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We have measured the weak localization magnetoresistance in (001)-oriented Si MOS structures with a wide range of mobilities. For the quantitative analysis of the data, we have extended the theory of weak-localization corrections in the ballistic regime to the system with two equivalent valleys in electron spectrum. This theory describes the observed magnetoresistance and allows the extraction of the phase breaking time tau_phi and the intervalley scattering time tau_v. The temperature dependences tau_phi(T) for all studied structures are in good agreement with the theory of electron-electron interaction effects in two-dimensional systems. The intervalley scattering is elastic and rather strong: tau_v is typically only an order of magnitude greater than the transport time, tau. It is found that the intervalley scattering rate is temperature-independent and the ratio tau_v/tau decreases with increasing the electron density. These observations suggest that the roughness of the Si-SiO2 interface plays the major role in intervalley scattering.
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Submitted 25 January, 2007;
originally announced January 2007.
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Critical behavior of transport and magnetotransport in 2D electron system in Si in the vicinity of the metal-insulator transition
Authors:
D. A. Knyazev,
O. E. Omelyanovskii,
V. M. Pudalov,
I. S. Burmistrov
Abstract:
We report on studies of the magnetoresistance in strongly correlated 2D electron system in Si in the critical regime, in the close vicinity of the 2D metal-insulator transition. We performed self-consistent comparison of our data with solutions of two equations of the cross-over renormalization group (CRG) theory which describes temperature evolutions of the resistivity and interaction parameter…
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We report on studies of the magnetoresistance in strongly correlated 2D electron system in Si in the critical regime, in the close vicinity of the 2D metal-insulator transition. We performed self-consistent comparison of our data with solutions of two equations of the cross-over renormalization group (CRG) theory which describes temperature evolutions of the resistivity and interaction parameters for 2D electron system. We found a good agreement between the ρ(T,B) data and the RG theory in a wide range of the in-plane fields, 0-2.1 T. This agreement supports the interpretation of the observed 2D MIT as the true quantum phase transition.
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Submitted 15 December, 2006;
originally announced December 2006.
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Charge Transport in a Spin-Polarized 2D Electron System in Silicon
Authors:
D. A. Knyazev,
O. E. Omelyanovskii,
A. S. Dormidontov,
V. M. Pudalov
Abstract:
The temperature dependences of the conductivity σ(T) for strongly interacting 2D electron system in silicon have been analyzed both in zero magnetic field and in spin-polarizing magnetic field of 14.2T, parallel to the sample plane. Measurements were carried out in a wide temperature range (1.4-9)K, in the ballistic regime of electron-electron interaction, i.e., for Tτ> 1. In zero magnetic field…
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The temperature dependences of the conductivity σ(T) for strongly interacting 2D electron system in silicon have been analyzed both in zero magnetic field and in spin-polarizing magnetic field of 14.2T, parallel to the sample plane. Measurements were carried out in a wide temperature range (1.4-9)K, in the ballistic regime of electron-electron interaction, i.e., for Tτ> 1. In zero magnetic field, the data obtained for σ(T) are quantitatively described by the theory of interaction corrections. In the fully spin-polarized state, the measured σ(T) dependences are nonlinear and even nonmonotonic for the same temperature range, where the σ(T) dependences are monotonic in the absence of the field. Nevertheless, the low-temperature parts of the experimental σ(T) dependences are linear and are qualitatively consistent with the calculated interaction corrections.
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Submitted 30 May, 2006;
originally announced May 2006.
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Origin of Rapid Oscillations in Low Dimensional (TMTSF)2PF6
Authors:
A. V. Kornilov,
V. M. Pudalov,
A. -K. Klehe,
A. Ardavan,
J. S. Qualls,
J. Singleton
Abstract:
In order to clarify the origin of the "Rapid Oscillation" (RO) in (TMTSF)2PF6, we studied the magnetoresistance anisotropy in the Field Induced Spin Density Wave (FISDW) phase. We have found that in the FISDW insulating state, the Fermi surface is not totally gapped; the remaining 2D metallic pockets are quantized in magnetic field and give rise to the RO. Decreasing temperature does not change…
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In order to clarify the origin of the "Rapid Oscillation" (RO) in (TMTSF)2PF6, we studied the magnetoresistance anisotropy in the Field Induced Spin Density Wave (FISDW) phase. We have found that in the FISDW insulating state, the Fermi surface is not totally gapped; the remaining 2D metallic pockets are quantized in magnetic field and give rise to the RO. Decreasing temperature does not change the size and orientation of the closed pockets, rather, it causes depopulation of the delocalized states in favor of the localized ones, resulting in the disappearance of the RO.
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Submitted 25 October, 2005;
originally announced October 2005.
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Nonmonotonic Temperature Dependence of the Hall Resistance for 2D Electron System in Si
Authors:
A. Yu. Kuntsevich,
D. A. Knyazev,
V. I. Kozub,
V. M. Pudalov,
G. Brunhaler,
G. Bauer
Abstract:
Weak field Hall resistance Rxy(T) of the 2D electron system in Si was measured over the range of temperatures 1-35 K and densities, where the diagonal resistivity exhibits a ``metallic'' behavior. The Rxy(T) dependence was found to be non-monotonic with a maximum at temperatures Tm~0.16Tf. The Rxy(T) variations in the low-temperature domain (T<Tm) agree qualitatively with the semiclassical model…
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Weak field Hall resistance Rxy(T) of the 2D electron system in Si was measured over the range of temperatures 1-35 K and densities, where the diagonal resistivity exhibits a ``metallic'' behavior. The Rxy(T) dependence was found to be non-monotonic with a maximum at temperatures Tm~0.16Tf. The Rxy(T) variations in the low-temperature domain (T<Tm) agree qualitatively with the semiclassical model, that takes into account a broadening of the Fermi-distribution solely. The semiclassical result considerably exceeds an interaction-induced quantum correction. In the ``high-temperature'' domain (T>Tm), the Rxy(T) dependence can be qualitatively explained in terms of either a semiclassical T-dependence of a transport time, or a thermal activation of carries from a localized band.
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Submitted 19 April, 2005;
originally announced April 2005.
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Light-induced switching in the back-gated organic transistors with built-in conduction channel
Authors:
V. Podzorov,
V. M. Pudalov,
M. E. Gershenson
Abstract:
We report on observation of a light-induced switching of the conductance in the back-gated organic field-effect transistors (OFETs) with built-in conduction channel. In the studied devices, the built-in channel is formed owing to the self-sensitized photo-oxidation of rubrene surface. In the dark, the back gate controls the charge injection from metal contacts into the built-in channel: the high…
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We report on observation of a light-induced switching of the conductance in the back-gated organic field-effect transistors (OFETs) with built-in conduction channel. In the studied devices, the built-in channel is formed owing to the self-sensitized photo-oxidation of rubrene surface. In the dark, the back gate controls the charge injection from metal contacts into the built-in channel: the high-current ON state corresponds to zero or negative back-gate voltage; the low-current OFF state - to a positive back-gate voltage that blocks the Schottky contacts. Illumination of the OFET in the OFF state with a short pulse of light switches the device into the ON state that persists in the dark for days. The OFF state can be restored by cycling the back gate voltage. The observed effect can be explained by screening of the back-gate electric field by the charges photo-generated in the bulk of organic semiconductor.
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Submitted 29 June, 2004;
originally announced June 2004.
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Metallic conduction, apparent metal-insulator transition and related phenomena in two-dimensional electron liquid
Authors:
V. M. Pudalov
Abstract:
The lecture introduces a reader to the relatively young field of physics of strongly interacting and disordered 2D electron system, in particular, to the phenomena of the metallic conduction and the apparent metal-insulator transition in 2D. The paper briefly overviews the experimental data on the electron transport, magnetotransport, spin-magnetization in 2D, and on the electron-electron intera…
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The lecture introduces a reader to the relatively young field of physics of strongly interacting and disordered 2D electron system, in particular, to the phenomena of the metallic conduction and the apparent metal-insulator transition in 2D. The paper briefly overviews the experimental data on the electron transport, magnetotransport, spin-magnetization in 2D, and on the electron-electron interaction effects.
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Submitted 14 May, 2004;
originally announced May 2004.
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On the Electron-Electron Interactions in Two Dimensions
Authors:
V. M. Pudalov,
M. E. Gershenson,
H. Kojima
Abstract:
In this paper, we analyze several experiments that address the effects of electron-electron interactions in 2D electron (hole) systems in the regime of low carrier density. The interaction effects result in renormalization of the effective spin susceptibility, effective mass, and g*-factor. We found a good agreement among the data obtained for different 2D electron systems by several experimenta…
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In this paper, we analyze several experiments that address the effects of electron-electron interactions in 2D electron (hole) systems in the regime of low carrier density. The interaction effects result in renormalization of the effective spin susceptibility, effective mass, and g*-factor. We found a good agreement among the data obtained for different 2D electron systems by several experimental teams using different measuring techniques. We conclude that the renormalization is not strongly affected by the material or sample-dependent parameters such as the potential well width, disorder (the carrier mobility), and the bare (band) mass. We demonstrate that the apparent disagreement between the reported results on various 2D electron systems originates mainly from different interpretations of similar "raw" data. Several important issues should be taken into account in the data processing, among them the dependences of the effective mass and spin susceptibility on the in-plane field, and the temperature dependence of the Dingle temperature. The remaining disagreement between the data for various 2D electron systems, on one hand, and the 2D hole system in GaAs, on the other hand, may indicate more complex character of electron-electron interactions in the latter system.
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Submitted 19 March, 2004; v1 submitted 21 January, 2004;
originally announced January 2004.
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Reply to Comment (cond-mat/0311174)
Authors:
V. M. Pudalov,
M. E. Gershenson,
H. Kojima,
G. Brunthaler,
G. Bauer
Abstract:
We demonstrate that the experimental data on the temperature dependence of the resistivity and conductivity for high-mobility Si-MOS structures, obtained for a wide range of densities (~ 1:7) at intermediate temperatures, agree quantitatively with theory of interaction corrections in the ballistic regime, Tτ>1. Our comparison does not involve any fitting parameters.
We demonstrate that the experimental data on the temperature dependence of the resistivity and conductivity for high-mobility Si-MOS structures, obtained for a wide range of densities (~ 1:7) at intermediate temperatures, agree quantitatively with theory of interaction corrections in the ballistic regime, Tτ>1. Our comparison does not involve any fitting parameters.
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Submitted 16 April, 2004; v1 submitted 5 January, 2004;
originally announced January 2004.
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Coexistence or Separation of the Superconducting, Antiferromagnetic, and Paramagnetic Phases in Quasi One-Dimensional (TMTSF)2PF6 ?
Authors:
A. V. Kornilov,
V. M. Pudalov,
Y. Kitaoka,
K. Ishida,
G. -q. Zheng,
T. Mito,
J. S. Qualls
Abstract:
We report on experimental studies of the character of phase transitions in the quasi-1D organic compound (TMTSF)2PF6 in the close vicinity of the borders between the paramagnetic metal PM, antiferromagnetic insulator AF, and superconducting SC states. In order to drive the system through the phase border P_0(T_0), the sample was maintained at fixed temperature T and pressure P, whereas the criti…
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We report on experimental studies of the character of phase transitions in the quasi-1D organic compound (TMTSF)2PF6 in the close vicinity of the borders between the paramagnetic metal PM, antiferromagnetic insulator AF, and superconducting SC states. In order to drive the system through the phase border P_0(T_0), the sample was maintained at fixed temperature T and pressure P, whereas the critical pressure P_0 was tuned by applying the magnetic field B. In this approach, the magnetic field was used (i) for tuning (P-P_0), and (ii) for identifying the phase composition (due to qualitatively different magnetoresistance behavior in different phases). Experimentally, we measured R(B) and its temperature dependence R(B,T) in the pressure range (0 - 1)GPa. Our studies focus on the features of the magnetoresistance at the phase transition between the PM and AF phases, in the close vicinity to the superconducting transition at T~1K. We found pronounced history effects arising when the AF/PM phase border is crossed by swee** the magnetic field: the resistance depends on a trajectory which the system arrives at a given point of the P-B-T phase space. In the transition from the PM to AF phase, the features of the PM phase extends well into the AF phase. At the opposite transition from the AF to PM phase, the features of the AF phase are observed in the PM phase. These results evidence for a macroscopically inhomogeneous state, which contains macroscopic inclusions of the minority phase. When the system is driven away from the transition, the homogeneous state is restored; upon a return motion to the phase boundary, no signatures of the minority phase are observed up to the very phase boundary.
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Submitted 1 July, 2003;
originally announced July 2003.
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Single-Crystal Organic Field Effect Transistors with the Hole Mobility ~ 8 cm2/Vs
Authors:
V. Podzorov,
S. E. Sysoev,
E. Loginova,
V. M. Pudalov,
M. E. Gershenson
Abstract:
We report on the fabrication and characterization of single-crystal organic p-type field-effect transistors (OFETs) with the field-effect hole mobility mu \~ 8 cm2/Vs, substantially higher than that observed in thin-film OFETs. The single-crystal devices compare favorably with thin-film OFETs not only in this respect: the mobility for the single-crystal devices is nearly independent of the gate…
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We report on the fabrication and characterization of single-crystal organic p-type field-effect transistors (OFETs) with the field-effect hole mobility mu \~ 8 cm2/Vs, substantially higher than that observed in thin-film OFETs. The single-crystal devices compare favorably with thin-film OFETs not only in this respect: the mobility for the single-crystal devices is nearly independent of the gate voltage and the field effect onset is very sharp. Subthreshold slope as small as S = 0.85 V/decade has been observed for a gate insulator capacitance Ci = 2 +- 0.2 nF/cm2. This corresponds to the intrinsic subthreshold slope Si = SCi at least one order of magnitude smaller than that for the best thin-film OFETs and amorphous hydrogenated silicon (a-Si:H) devices.
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Submitted 7 June, 2003;
originally announced June 2003.
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Field Effect Transistors on Rubrene Single Crystals with Parylene Gate Insulator
Authors:
V. Podzorov,
V. M. Pudalov,
M. E. Gershenson
Abstract:
We report on fabrication and characterization of the organic field effect transistors (OFETs) on the surface of single crystals of rubrene. The parylene polymer film has been used as the gate insulator. At room temperature, these OFETs exhibit the p-type conductivity with the field effect mobility up to 1 cm^2/Vs and the on/off ratio ~ 10^4. The temperature dependence of the mobility is discusse…
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We report on fabrication and characterization of the organic field effect transistors (OFETs) on the surface of single crystals of rubrene. The parylene polymer film has been used as the gate insulator. At room temperature, these OFETs exhibit the p-type conductivity with the field effect mobility up to 1 cm^2/Vs and the on/off ratio ~ 10^4. The temperature dependence of the mobility is discussed.
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Submitted 24 October, 2002;
originally announced October 2002.
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Reply to Comment on "Weak anisotropy and disorder dependence of the in-plane magnetoresistance in high mobility (100) Si-inversion layers"
Authors:
V. M. Pudalov,
G. Brunthaler,
A. Prinz,
G. Bauer
Abstract:
Reply to the Comment by V.T. Dolgopolov and A.V. Gold [cond-mat/0203276].
Reply to the Comment by V.T. Dolgopolov and A.V. Gold [cond-mat/0203276].
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Submitted 14 June, 2002;
originally announced June 2002.
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Reply to Comment on "Low-Density Spin Susceptibility and Effective Mass of Mobile Electrons in Si Inversion Layers"
Authors:
V. M. Pudalov,
M. Gershenson,
H. Kojima,
N. Busch,
E. M. Dizhur,
G. Brunthaler,
A. Prinz,
G. Bauer
Abstract:
Reply to the Comment by S.V. Kravchenko, A.A. Shashkin, and V.T. Dolgopolov [cond-mat/0106056]
Reply to the Comment by S.V. Kravchenko, A.A. Shashkin, and V.T. Dolgopolov [cond-mat/0106056]
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Submitted 14 June, 2002;
originally announced June 2002.
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Interaction Effects in Conductivity of Si Inversion Layers at Intermediate Temperatures
Authors:
V. M. Pudalov,
M. E. Gershenson,
H. Kojima,
G. Brunthaler,
A. Prinz,
G. Bauer
Abstract:
We compare the temperature dependence of resistivity ρ(T) of Si MOSFETs with the recent theory by Zala et al. This comparison does not involve any fitting parameters: the effective mass m* and g*-factor for mobile electrons have been found independently. An anomalous increase of ρwith temperature, which has been considered a signature of the "metallic" state, can be described quantitatively by t…
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We compare the temperature dependence of resistivity ρ(T) of Si MOSFETs with the recent theory by Zala et al. This comparison does not involve any fitting parameters: the effective mass m* and g*-factor for mobile electrons have been found independently. An anomalous increase of ρwith temperature, which has been considered a signature of the "metallic" state, can be described quantitatively by the interaction effects in the ballistic regime. The in-plane magnetoresistance ρ(B) is qualitatively consistent with the theory; however, the lack of quantitative agreement indicates that the magnetoresistance is more susceptible to the sample-specific effects than ρ(T).
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Submitted 30 May, 2002; v1 submitted 21 May, 2002;
originally announced May 2002.
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Memory Effects in Electron Transport in Si Inversion Layers in the Dilute Regime: Individuality versus Universality
Authors:
V. M. Pudalov,
M. E. Gershenson,
H. Kojima
Abstract:
In order to separate the universal and sample-specific effects in the conductivity of high-mobility Si inversion layers, we studied the electron transport in the same device after cooling it down to 4K at different fixed values of the gate voltage V^{cool}. Different V^{cool} did not modify significantly either the momentum relaxation rate or the strength of electron-electron interactions. Howev…
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In order to separate the universal and sample-specific effects in the conductivity of high-mobility Si inversion layers, we studied the electron transport in the same device after cooling it down to 4K at different fixed values of the gate voltage V^{cool}. Different V^{cool} did not modify significantly either the momentum relaxation rate or the strength of electron-electron interactions. However, the temperature dependences of the resistance and the magnetoresistance in parallel magnetic fields, measured in the vicinity of the metal-insulator transition in 2D, carry a strong imprint of individuality of the quenched disorder determined by V^{cool}. This demonstrates that the observed transition between ``metallic'' and insulating regimes involves both, universal effects of electron-electron interaction and sample-specific effects. Far away from the transition, at lower carrier densities and lower resistivities < 0.1 h/e^2, the transport and magnetotransport become nearly universal.
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Submitted 31 December, 2001;
originally announced January 2002.
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Absence of Ferromagnetic Instability at the Metal-Insulator Transition in Si-inversion Layers
Authors:
V. M. Pudalov,
M. E. Gershenson,
H. Kojima
Abstract:
We have measured the Shubnikov-de Haas oscillations in high-mobility Si MOS structures over a wide range of the carrier densities n > 0.77x10^{11}/cm^2. This range includes the critical density n_c of the metal-insulator transition (2D MIT) for two samples studied. The periodicity of oscillations clearly demonstrates that the electron states remain fourfold degenerate down to and at the 2D MIT.…
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We have measured the Shubnikov-de Haas oscillations in high-mobility Si MOS structures over a wide range of the carrier densities n > 0.77x10^{11}/cm^2. This range includes the critical density n_c of the metal-insulator transition (2D MIT) for two samples studied. The periodicity of oscillations clearly demonstrates that the electron states remain fourfold degenerate down to and at the 2D MIT. Both the effective spin susceptibility χ* and mass m* remain finite and show no signatures of divergency at the critical density for both samples studied. To test possible divergency of χ*(n) and m*(n) at even lower densities, we have analyzed the data on χ*(n) and m*(n) in terms of a critical dependence χ*, m* ~ (n/n_0 -1)^{-α}. Our data suggest that χ* and m* may diverge at n_0 < 0.5x10^{11}/cm^2 (r_s > 12), which is significantly smaller than n_c.
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Submitted 14 June, 2002; v1 submitted 8 October, 2001;
originally announced October 2001.
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Unexpected Metallic-like Behavior of the Resistance in the Dielectric Spin Density Wave State in (TMTSF)2PF6
Authors:
A. V. Kornilov,
V. M. Pudalov,
Y. Kitaoka,
K. Ishida,
T. Mito,
N. Tateiwa,
T. C. Kobayashi,
J. S. Brooks,
J. S. Qualls
Abstract:
We report unexpected features of the transport in the dielectric spin density wave (SDW) phase of the quasi one-dimensional compound (TMTSF)_2PF_6: the resistance exhibits a maximum and a subsequent strong drop as temperature decreases below approximately 2K. The maximum in R(T) is not caused by depinning or Joule heating of the SDW. The characteristic temperature of the R(T) maximum and the sca…
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We report unexpected features of the transport in the dielectric spin density wave (SDW) phase of the quasi one-dimensional compound (TMTSF)_2PF_6: the resistance exhibits a maximum and a subsequent strong drop as temperature decreases below approximately 2K. The maximum in R(T) is not caused by depinning or Joule heating of the SDW. The characteristic temperature of the R(T) maximum and the scaling behavior of the resistance at different magnetic fields B evidence that the non-monotonic R(T) dependence has an origin different from the one known for the quantum Hall effect region of the phase diagram. We also found that the borderline T_0(B,P) which divides the field induced SDW region of the P-B-T phase diagram into the hysteresis and non-hysteresis domains, terminates in the N=1 sub-phase; the borderline has thus no extension to the SDW N=0 phase.
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Submitted 28 August, 2001;
originally announced August 2001.
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The low-density spin susceptibility and effective mass of mobile electrons in Si inversion layers
Authors:
V. M. Pudalov,
M. E. Gershenson,
H. Kojima,
N. Butch,
E. M. Dizhur,
G. Brunthaler,
A. Prinz,
G. Bauer
Abstract:
We studied the Shubnikov-de Haas (SdH) oscillations in high-mobility Si-MOS samples over a wide range of carrier densities $n\simeq (1-50) \times 10^{11}$cm$^{-2}$, which includes the vicinity of the apparent metal-insulator transition in two dimensions (2D MIT). Using a novel technique of measuring the SdH oscillations in superimposed and independently controlled parallel and perpendicular magn…
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We studied the Shubnikov-de Haas (SdH) oscillations in high-mobility Si-MOS samples over a wide range of carrier densities $n\simeq (1-50) \times 10^{11}$cm$^{-2}$, which includes the vicinity of the apparent metal-insulator transition in two dimensions (2D MIT). Using a novel technique of measuring the SdH oscillations in superimposed and independently controlled parallel and perpendicular magnetic fields, we determined the spin susceptibility $χ^*$, the effective mass $m^*$, and the $g^*$-factor for mobile electrons. These quantities increase gradually with decreasing density; near the 2D MIT, we observed enhancement of $χ^*$ by a factor of $\sim 4.7$.
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Submitted 9 October, 2001; v1 submitted 3 May, 2001;
originally announced May 2001.
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Valley Splitting in Si-Inversion Layers at Low Magnetic Fields
Authors:
V. M. Pudalov,
A. Punnoose,
G. Brunthaler,
A. Prinz,
G. Bauer
Abstract:
We report novel manifestation of the valley splitting for the two valley electron system in (100) Si-inversion layers at low carrier density. We found that valley splitting causes almost 100% modulation of the Shubnikov de Haas oscillations in very low magnetic fields, almost on the bound of the quantum interference peak of the negative magnetoresistance. From the interference pattern of oscilla…
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We report novel manifestation of the valley splitting for the two valley electron system in (100) Si-inversion layers at low carrier density. We found that valley splitting causes almost 100% modulation of the Shubnikov de Haas oscillations in very low magnetic fields, almost on the bound of the quantum interference peak of the negative magnetoresistance. From the interference pattern of oscillations we determined the valley splitting in the B=0 limit which appears to vary only within a factor of 1.3 over the density range (3-7)x10^{11}/cm^2. We found also that level broadenings in both electron valleys differ only by < 3%. The latter result shows that the inter-valley scattering is not responsible for the strong (six fold) `metallic-like' changes of the resistivity with temperature.
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Submitted 18 April, 2001;
originally announced April 2001.
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Critical behaviour of thermopower and conductivity at the metal-insulator transition in high-mobility Si-MOSFETs
Authors:
R. Fletcher,
V. M. Pudalov,
A. D. B. Radcliffe,
C. Possanzini
Abstract:
This paper reports thermopower and conductivity measurements through the metal-insulator transition for 2-dimensional electron gases in high mobility Si-MOSFETs. At low temperatures both thermopower and conductivity show critical behaviour as a function of electron density. When approaching the critical density from the metallic side the diffusion thermopower appears to diverge and the conductiv…
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This paper reports thermopower and conductivity measurements through the metal-insulator transition for 2-dimensional electron gases in high mobility Si-MOSFETs. At low temperatures both thermopower and conductivity show critical behaviour as a function of electron density. When approaching the critical density from the metallic side the diffusion thermopower appears to diverge and the conductivity vanishes. On the insulating side the thermopower shows an upturn with decreasing temperature. These features have much in common with those expected for an Anderson transition.
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Submitted 13 March, 2001;
originally announced March 2001.
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Novel Phases in the Field Induced Spin Density Wave State in (TMTSF)_2PF_6
Authors:
A. V. Kornilov,
V. M. Pudalov,
Y. Kitaoka,
K. Ishida,
T. Mito,
J. S. Brooks,
J. S. Qualls,
J. A. A. J. Perenboom,
N. Tateiwa,
T. C. Kobayashi
Abstract:
Magnetoresistance measurements on the quasi one-dimensional organic conductor (TMTSF)_2PF_6 performed in magnetic fields B up to 16T, temperatures T down to 0.12K and under pressures P up to 14kbar have revealed new phases on its P-B-T phase diagram. We found a new boundary which subdivides the field induced spin density wave (FISDW) phase diagram into two regions. We showed that a low-temperatu…
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Magnetoresistance measurements on the quasi one-dimensional organic conductor (TMTSF)_2PF_6 performed in magnetic fields B up to 16T, temperatures T down to 0.12K and under pressures P up to 14kbar have revealed new phases on its P-B-T phase diagram. We found a new boundary which subdivides the field induced spin density wave (FISDW) phase diagram into two regions. We showed that a low-temperature region of the FISDW diagram is characterized by a hysteresis behavior typical for the first order transitions, as observed in a number of studies. In contrast to the common believe, in high temperature region of the FISDW phase diagram, the hysteresis and, hence, the first order transitions were found to disappear. Nevertheless, sharp changes in the resistivity slope are observed both in the low and high temperature domains indicating that the cascade of transitions between different subphases exists over all range of the FISDW state. We also found that the temperature dependence of the resistance (at a constant B) changes sign at about the same boundary. We compare these results with recent theoretical models.
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Submitted 4 March, 2001;
originally announced March 2001.
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Effect of the In-Plane Magnetic Field on Conduction of the Si-inversion Layer: Magnetic Field Driven Disorder
Authors:
V. M. Pudalov,
G. Brunthaler,
A. Prinz,
G. Bauer
Abstract:
We compare the effects of temperature, disorder and parallel magnetic field on the metallic-like temperature dependence of the resistivity. We found a similarity between the effects of disorder and parallel field: the parallel field weakens the metallic-like conduction in high mobility samples and make it similar to that for low-mobility samples. We found a smooth continuous effect of the in-pla…
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We compare the effects of temperature, disorder and parallel magnetic field on the metallic-like temperature dependence of the resistivity. We found a similarity between the effects of disorder and parallel field: the parallel field weakens the metallic-like conduction in high mobility samples and make it similar to that for low-mobility samples. We found a smooth continuous effect of the in-plane field on conduction, without any threshold. While conduction remains non-activated, the parallel magnetic field restores the same resistivity value as the high temperature does. This matching sets substantial constraints on the choice of the theoretical models developed to explain the mechanism of the metallic conduction and parallel field magnetoresistance in 2D carrier systems. We demonstrate that the data for magneto- and temperature dependence of the resistivity of Si-MOS samples in parallel field may be well described by a simple model of the magnetic field dependent disorder.
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Submitted 3 May, 2001; v1 submitted 4 March, 2001;
originally announced March 2001.
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Weak-localization type description of conduction in the "anomalous" metallic state
Authors:
B. L. Altshuler,
G. W. Martin,
D. L. Maslov,
V. M. Pudalov,
A. Prinz,
G. Brunthaler,
G. Bauer
Abstract:
This paper is devoted to the temperature dependence of the resistivity in Si- MOS samples over the wide range of densities in the ``metallic phase'' (n>n_c) but not too close to the critical density n_c. Three domains of different behavior in ρ(T) are identified. These are: [i] quantum domain of `low-temperatures', where a logarithmic T-dependence of ρ(with $dρ/dT<0$) dominates; [ii] semi-classi…
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This paper is devoted to the temperature dependence of the resistivity in Si- MOS samples over the wide range of densities in the ``metallic phase'' (n>n_c) but not too close to the critical density n_c. Three domains of different behavior in ρ(T) are identified. These are: [i] quantum domain of `low-temperatures', where a logarithmic T-dependence of ρ(with $dρ/dT<0$) dominates; [ii] semi-classical domain of `high-temperatures', in which Drude resistivity strongly varies with T (with dρ/dT>0); and [ii] crossover between the former two, where a linear T-dependence dominates (with dρ/dT>0). In the crossover regime and at higher densities (n>20x10^{11}/cm^2), ρ(T) goes through a minimum at temperature T_{min}. Both the absolute value of T_{min} and its dependence on density are found to be in an agreement with the conventional weak-localization theory. For n smaller than \sim 20x10^{11}/cm^2, the theoretical estimate for T_{min} falls outside the experimentally accessible temperature range. This explains the absence of the minimum at these densities in the data. In total, over the two decades in the temperature (domains [ii] and [iii]), the two semiclassical effects mimic the metallic like transport properties. Our analysis shows that the behaviour of ρ(T) in the region of ρ<< h/e^2 can be described phenomenologically in terms of the conventional weak-localization theory.
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Submitted 1 August, 2000;
originally announced August 2000.
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Exclusion of quantum coherence as the origin of the 2D metallic state in high-mobility silicon inversion layers
Authors:
G. Brunthaler,
A. Prinz,
G. Bauer,
V. M. Pudalov
Abstract:
The temperature and density dependence of the phase coherence time $τ_φ$ in high-mobility silicon inversion layers was determined from the magnetoresistivity due to weak localization. The upper temperature limit for single-electron quantum interference effects was delineated by comparing $τ_φ$ with the momentum relaxation time $τ$. A comparison between the density dependence of the borders for q…
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The temperature and density dependence of the phase coherence time $τ_φ$ in high-mobility silicon inversion layers was determined from the magnetoresistivity due to weak localization. The upper temperature limit for single-electron quantum interference effects was delineated by comparing $τ_φ$ with the momentum relaxation time $τ$. A comparison between the density dependence of the borders for quantum interference effects and the strong resistivity drop reveals that theses effects are not related to each other. As the strong resistivity drop occurs in the Drude regime, the apparent metallic behavior can not be caused by quantum coherent effects.
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Submitted 14 September, 2001; v1 submitted 13 July, 2000;
originally announced July 2000.
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Weak anisotropy and disorder dependence of the in-plane magnetoresistance in high mobility (100) Si-inversion layers
Authors:
V. M. Pudalov,
G. Brunthaler,
A. Prinz,
G. Bauer
Abstract:
We report studies of the magnetoresistance (MR) in a two-dimensional electron system in (100) Si-inversion layers, for perpendicular and parallel orientations of the current with respect to the magnetic field in the 2D-plane. The magnetoresistance is almost isotropic; this result does not support the suggestion of the orbital origin of the MR in Si-inversion layer. In the hop** regime, however…
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We report studies of the magnetoresistance (MR) in a two-dimensional electron system in (100) Si-inversion layers, for perpendicular and parallel orientations of the current with respect to the magnetic field in the 2D-plane. The magnetoresistance is almost isotropic; this result does not support the suggestion of the orbital origin of the MR in Si-inversion layer. In the hop** regime, however, the MR contains a weak anisotropic component that is non-monotonic in magnetic field. We found that the field, at which the MR saturates, for different samples varies by a factor of two, being lower or higher than the field of complete spin polarization of free carriers. Therefore, the saturation of the MR can not be identified with the spin polarization of free carriers.
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Submitted 3 July, 2001; v1 submitted 12 April, 2000;
originally announced April 2000.
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Metal-insulator transition in 2D: resistance in the critical region
Authors:
B. L. Altshuler,
D. L. Maslov,
V. M. Pudalov
Abstract:
The goal of this paper is to highlight several issues which are most crucial for the understanding of the ``metal-insulator transition'' in two dimensions. We discuss some common problems in interpreting experimental results on high mobility Si MOSFETs. We analyze concepts and methods used to determine the critical density of electrons at the metal-insulator transition. In particular, we discuss…
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The goal of this paper is to highlight several issues which are most crucial for the understanding of the ``metal-insulator transition'' in two dimensions. We discuss some common problems in interpreting experimental results on high mobility Si MOSFETs. We analyze concepts and methods used to determine the critical density of electrons at the metal-insulator transition. In particular, we discuss the origin of the temperature dependence of the resistivity and reasons for this dependence to flatten out at some electron density in the vicinity of the metal-insulator transition. This flattening has recently been proposed to indicate a true quantum phase transition. We suggest an alternative interpretation of this result and demonstrate the consistency of our proposition with the experimental data. One of the main questions, which arise in connection with the transition, is whether or not the metallic state is qualitatively distinct from a conventional disordered Fermi liquid. We analyze the arguments in favor of both affirmative and negative answers to this question and conclude that the experimental results accumulated up-to-date do not provide convincing evidence for the new state of matter characterized by a metallic-like residual conductivity. We also discuss in details the measurement and control of the electron temperature; these issues are crucial for interpreting the low-temperature experimental data.
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Submitted 20 April, 2000; v1 submitted 2 March, 2000;
originally announced March 2000.
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Critical behavior of thermopower and conductivity at the metal-insulator transition in high-mobility Si-MOSFET's
Authors:
R. Fletcher,
V. M. Pudalov,
A. D. B. Radcliffe,
C. Possanzini
Abstract:
This letter reports thermopower and conductivity measurements through the metal-insulator transition for 2-dimensional electron gases in high mobility Si-MOSFET's. At low temperatures both thermopower and conductivity show critical behavior as a function of electron density which is very similar to that expected for an Anderson transition. In particular, when approaching the critical density fro…
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This letter reports thermopower and conductivity measurements through the metal-insulator transition for 2-dimensional electron gases in high mobility Si-MOSFET's. At low temperatures both thermopower and conductivity show critical behavior as a function of electron density which is very similar to that expected for an Anderson transition. In particular, when approaching the critical density from the metallic side the diffusion thermopower appears to diverge and the conductivity vanishes. On the insulating side the thermopower shows an upturn with decreasing temperature.
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Submitted 28 February, 2000;
originally announced February 2000.
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Weak localization in the 2D metallic regime of Si-MOS
Authors:
G. Brunthaler,
A. Prinz,
G. Bauer,
V. M. Pudalov,
E. M. Dizhur,
J. Jaroszynski,
P. Glod,
T. Dietl
Abstract:
The negative magnetoresistance due to weak localization is investigated in the two-dimensional metallic state of Si-MOS structures for high conductance values between 35 and 120 e^2/h. The extracted phase coherence time is equal to the momentum relaxation time at 10 K but nearly 100 times longer at the lowest temperature. Nevertheless, only weak logarithmic corrections to the conductivity are pr…
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The negative magnetoresistance due to weak localization is investigated in the two-dimensional metallic state of Si-MOS structures for high conductance values between 35 and 120 e^2/h. The extracted phase coherence time is equal to the momentum relaxation time at 10 K but nearly 100 times longer at the lowest temperature. Nevertheless, only weak logarithmic corrections to the conductivity are present in the investigated temperature and concentration range thus proving the absence of strong quantum effects due to electron-electron interaction. From saturation effects of the phase coherence time a lower boundary for spin-orbit scattering of about 200 ps is estimated.
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Submitted 2 November, 1999;
originally announced November 1999.
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Metal-insulator transition in 2D: Anderson localization by temperature-dependent disorder?
Authors:
B. L. Altshuler,
D. L. Maslov,
V. M. Pudalov
Abstract:
A generalization of the single-parameter scaling theory of localization is proposed for the case when the random potential depends on temperature. The scaling equation describing the behavior of the resistance is derived. It is shown that the competition between the metallic-like temperature dependence of the Drude resistivity and localization leads to a maximum (minimum) at higher (lower) tempe…
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A generalization of the single-parameter scaling theory of localization is proposed for the case when the random potential depends on temperature. The scaling equation describing the behavior of the resistance is derived. It is shown that the competition between the metallic-like temperature dependence of the Drude resistivity and localization leads to a maximum (minimum) at higher (lower) temperatures. An illustration of a metal-insulator transition in the model of charged traps, whose concentration depends on temperature, is presented.
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Submitted 24 September, 1999; v1 submitted 23 September, 1999;
originally announced September 1999.
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Time-dependent Effects in the Metallic Phase in Si-MOS: Evidence for Non-Diffusive Transport
Authors:
V. M. Pudalov,
G. Brunthaler,
A. Prinz,
G. Bauer,
B. I. Fouks
Abstract:
We have found that the conduction in Si-MOS structures has a substantial imaginary component in the metallic phase for the density range 6 \times n_c > n > n_c, where n_c is the critical density of the metal-insulator transition. For high mobility samples, the corresponding delay (or advance) time equals approximately to 0.1 - 10ms and increases exponentially as density and temperature decrease.…
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We have found that the conduction in Si-MOS structures has a substantial imaginary component in the metallic phase for the density range 6 \times n_c > n > n_c, where n_c is the critical density of the metal-insulator transition. For high mobility samples, the corresponding delay (or advance) time equals approximately to 0.1 - 10ms and increases exponentially as density and temperature decrease. In very low mobility samples, at temperature of 0.3K, the time-lag in establishing the equilibrium resistance reaches hundreds of seconds. The delay (advance) times are approximately 10^2-10^8 times larger than the overall RC-time of the gated structure. These results give evidence for a non-Boltzmann character of the transport in the low-density metallic phase. We relate the time-dependent effects to tunneling of carries between the 2D bulk and localized states.
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Submitted 26 July, 1999;
originally announced July 1999.
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Weak Field Hall Resistance and Effective Carrier Density Through Metal-Insulator Transition in Si-MOS Structures
Authors:
V. M. Pudalov,
G. Brunthaler,
A. Prinz,
G. Bauer
Abstract:
We studied the weak field Hall voltage in 2D electron layers in Si-MOS structures with different mobilities, through the metal-insulator transition. In the vicinity of the critical density on the metallic side of the transition, we have found weak deviations (about 6-20 %) of the Hall voltage from its classical value. The deviations do not correlate with the strong temperature dependence of the…
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We studied the weak field Hall voltage in 2D electron layers in Si-MOS structures with different mobilities, through the metal-insulator transition. In the vicinity of the critical density on the metallic side of the transition, we have found weak deviations (about 6-20 %) of the Hall voltage from its classical value. The deviations do not correlate with the strong temperature dependence of the diagonal resistivity rho_{xx}(T). The smallest deviation in R_{xy} was found in the highest mobility sample exhibiting the largest variation in the diagonal resistivity ρ_{xx} with temperature (by a factor of 5).
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Submitted 16 April, 1999;
originally announced April 1999.
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Maximum Metallic Conductivity in Si-MOS Structures
Authors:
V. M. Pudalov,
G. Brunthaler,
A. Prinz,
G. Bauer
Abstract:
We found that the conductivity of the two-dimensional electron system in Si-MOS structures is limited to a maximum value, G_{max}, as either density increases or temperature decreases. This value G_{max} is weakly disorder dependent and ranging from 100 to 140 e^2/h for samples whose mobilities differ by a factor of 4.
We found that the conductivity of the two-dimensional electron system in Si-MOS structures is limited to a maximum value, G_{max}, as either density increases or temperature decreases. This value G_{max} is weakly disorder dependent and ranging from 100 to 140 e^2/h for samples whose mobilities differ by a factor of 4.
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Submitted 23 December, 1998; v1 submitted 10 December, 1998;
originally announced December 1998.
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Logarithmic Temperature Dependence of the Conductivity and Lack of Universal One-Parameter Scaling in the Two-Dimensional Metal
Authors:
V. M. Pudalov,
G. Brunthaler,
A. Prinz,
G. Bauer
Abstract:
We show that the two-dimensional metallic state in Si-MOS samples persists over a wide range of temperatures (16 mK to 8 K), sample peak mobilities (varying by a factor of 8), carrier densities (0.8 to $35\times 10^{11}$ cm$^{-2}$) and conductances from 0.3 to $120 e^2/h$. Our data reveal a failure of the universal one-parameter scaling. We have found a weak delocalizing logarithmic correction t…
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We show that the two-dimensional metallic state in Si-MOS samples persists over a wide range of temperatures (16 mK to 8 K), sample peak mobilities (varying by a factor of 8), carrier densities (0.8 to $35\times 10^{11}$ cm$^{-2}$) and conductances from 0.3 to $120 e^2/h$. Our data reveal a failure of the universal one-parameter scaling. We have found a weak delocalizing logarithmic correction to the conductivity, which governs a weak increase in the conductivity of the 2D metal as $T$ approaches zero.
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Submitted 10 March, 1998; v1 submitted 9 January, 1998;
originally announced January 1998.
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H/T Scaling of the Magnetoconductance in Two Dimensions near the Conductor-Insulator Transition
Authors:
D. Simonian,
S. V. Kravchenko,
M. P. Sarachik,
V. M. Pudalov
Abstract:
For an electron density near the H=0 insulator-to-conductor transition, the magnetoconductivity of the low-temperature conducting phase in high-mobility silicon MOSFETs is consistent with the form $Δσ(H_{||},T)\equivσ(H_{||},T)-σ(0,T) = f(H_{||}/T)$ for magnetic fields $H_{||}$ applied parallel to the plane of the electron system. This sets a valuable constraint on theory and provides further ev…
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For an electron density near the H=0 insulator-to-conductor transition, the magnetoconductivity of the low-temperature conducting phase in high-mobility silicon MOSFETs is consistent with the form $Δσ(H_{||},T)\equivσ(H_{||},T)-σ(0,T) = f(H_{||}/T)$ for magnetic fields $H_{||}$ applied parallel to the plane of the electron system. This sets a valuable constraint on theory and provides further evidence that the electron spin is central to the anomalous H=0 conducting phase in two dimensions.
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Submitted 12 January, 1998; v1 submitted 18 December, 1997;
originally announced December 1997.
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Effect of Tilted Magnetic Field on the Anomalous H=0 Conducting Phase in High-Mobility Si MOSFETs
Authors:
S. V. Kravchenko,
D. Simonian,
M. P. Sarachik,
A. D. Kent,
V. M. Pudalov
Abstract:
The suppression by a magnetic field of the anomalous H=0 conducting phase in high-mobility silicon MOSFETs is independent of the angle between the field and the plane of the 2D electron system. In the presence of a parallel field large enough to fully quench the anomalous conducting phase, the behavior is similar to that of disordered GaAs/AlGaAs heterostructures: the system is insulating in zer…
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The suppression by a magnetic field of the anomalous H=0 conducting phase in high-mobility silicon MOSFETs is independent of the angle between the field and the plane of the 2D electron system. In the presence of a parallel field large enough to fully quench the anomalous conducting phase, the behavior is similar to that of disordered GaAs/AlGaAs heterostructures: the system is insulating in zero (perpendicular) field and exhibits reentrant insulator-quantum Hall effect-insulator transitions as a function of perpendicular field. The results demonstrate that the suppression of the low-T phase is related only to the electrons' spin.
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Submitted 25 September, 1997; v1 submitted 23 September, 1997;
originally announced September 1997.
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Unconventional Metallic State in Two Dimensional System With Broken Inversion Symmetry
Authors:
V. M. Pudalov
Abstract:
We present a model that explains two phenomena, recently observed in high-mobility Si-MOS structures: (i) the strong enhancement of metallic conduction at low temperatures, T<2 K, and (ii) the occurrence of the metal-insulator transition in 2D electron system. Both effects are prescribed to the Coulomb and spin-orbit interaction; the latter is anomalously enhanced by the broken inversion symmetr…
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We present a model that explains two phenomena, recently observed in high-mobility Si-MOS structures: (i) the strong enhancement of metallic conduction at low temperatures, T<2 K, and (ii) the occurrence of the metal-insulator transition in 2D electron system. Both effects are prescribed to the Coulomb and spin-orbit interaction; the latter is anomalously enhanced by the broken inversion symmetry of the confining potential well.
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Submitted 8 July, 1997;
originally announced July 1997.
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Instability of the Two-Dimensional Metallic Phase to Parallel Magnetic Field
Authors:
V. M. Pudalov,
G. Brunthaler,
A. Prinz,
G. Bauer
Abstract:
We report on magnetotransport studies of the unusual two-dimensional metallic phase in high mobility Si-MOS structures. We have observed that the magnetic field applied in the 2D plane suppresses the metallic state, causing the resistivity to increase dramatically by more than 30 times. Over the total existence range of the metallic state, we have found three distinct types of the magnetoresista…
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We report on magnetotransport studies of the unusual two-dimensional metallic phase in high mobility Si-MOS structures. We have observed that the magnetic field applied in the 2D plane suppresses the metallic state, causing the resistivity to increase dramatically by more than 30 times. Over the total existence range of the metallic state, we have found three distinct types of the magnetoresistance, related to the corresponding quantum corrections to the conductivity. Our data suggest that the unusual metallic state is a consequence of both spin- and Coulomb-interaction effects.
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Submitted 4 July, 1997;
originally announced July 1997.
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On the Origin of the Metal-Insulator Transition in 2D
Authors:
V. M. Pudalov
Abstract:
Two phenomena have been recently observed in high-mobility Si MOS structures: (1) strong enhancement of the metallic conduction at low temperatures, T < 2K, and (2) the scaling behavior of the temperature and electric field dependences of the resistivity. These results evidence for the true metal-insulator transition in 2d, in apparent disagreement with the one-parameter scaling theory. Here we…
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Two phenomena have been recently observed in high-mobility Si MOS structures: (1) strong enhancement of the metallic conduction at low temperatures, T < 2K, and (2) the scaling behavior of the temperature and electric field dependences of the resistivity. These results evidence for the true metal-insulator transition in 2d, in apparent disagreement with the one-parameter scaling theory. Here we present a model that explains both effects in the framework of the spin-orbit interaction and provides a quantitative agreement with the experimental data.
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Submitted 4 July, 1997;
originally announced July 1997.
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Global phase diagram for the quantum Hall effect: An experimental picture
Authors:
S. V. Kravchenko,
Whitney Mason,
J. E. Furneaux,
V. M. Pudalov
Abstract:
We study the behavior of the extended states of a two-dimensional electron system in silicon in a magnetic field, B. Our results show that the extended states, corresponding to the centers of different Landau levels, merge with the lowest extended state as B --> 0. Using our data, we construct an experimental-based ``disorder vs filling factor'' phase diagram for the integer quantum Hall effect…
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We study the behavior of the extended states of a two-dimensional electron system in silicon in a magnetic field, B. Our results show that the extended states, corresponding to the centers of different Landau levels, merge with the lowest extended state as B --> 0. Using our data, we construct an experimental-based ``disorder vs filling factor'' phase diagram for the integer quantum Hall effect (QHE). Generalizing this diagram to the case of the fractional QHE, we show that it is consistent with the recently observed direct transitions between insulator and FQHE at 2/5, 2/7, and 2/9.
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Submitted 10 June, 1995;
originally announced June 1995.
