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DESTRUCTION OF THE QUANTUM HALL EFFECT WITH INCREASING DISORDER
Authors:
J. E. Furneaux,
S. V. Kravchenko,
Whitney Mason,
G. E. Bowker,
V. M. Pudalov
Abstract:
We report experimental studies of disorder-induced transitions between quantum-Hall, metallic, and insulating states in a very dilute two-dimensional electron system in silicon at a magnetic field corresponding to Landau level filling factor $ν=1$. At low disorder, the lowest extended state at $ν=1$ is below the Fermi energy so that the system is in the quantum Hall state. Our data show that wit…
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We report experimental studies of disorder-induced transitions between quantum-Hall, metallic, and insulating states in a very dilute two-dimensional electron system in silicon at a magnetic field corresponding to Landau level filling factor $ν=1$. At low disorder, the lowest extended state at $ν=1$ is below the Fermi energy so that the system is in the quantum Hall state. Our data show that with increasing disorder (but at constant electron density and magnetic field), the extended state DOES NOT DISAPPEAR BUT FLOATS UP IN ENERGY SO THAT THE SYSTEM BECOMES INSULATING. As the extended state crosses the Fermi energy, the conductivity $σ_{xx}\sim e^2/2h$ has temperature dependence characteristic of a metallic system.
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Submitted 27 March, 1995;
originally announced March 1995.
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"Scaling of an anomalous metal/insulator transition in a 2D system in silicon at zero magnetic field"
Authors:
S. V. Kravchenko,
Whitney E. Mason,
G. E. Bowker,
J. E. Furneaux,
V. M. Pudalov,
M. D'Iorio
Abstract:
We have studied the temperature dependence of resistivity, $ρ$, for a two-dimensional electron system in silicon at low electron densities, $n_s\sim10^{11}$ cm$^{-2}$, near the metal/insulator transition. The resistivity was empirically found to scale with a single parameter, $T_0$, which approaches zero at some critical electron density, $n_c$, and increases as a power $T_0\propto|n_s-n_c|^β$ w…
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We have studied the temperature dependence of resistivity, $ρ$, for a two-dimensional electron system in silicon at low electron densities, $n_s\sim10^{11}$ cm$^{-2}$, near the metal/insulator transition. The resistivity was empirically found to scale with a single parameter, $T_0$, which approaches zero at some critical electron density, $n_c$, and increases as a power $T_0\propto|n_s-n_c|^β$ with $β=1.6\pm0.1$ both in metallic ($n_s>n_c$) and insulating ($n_s<n_c$) regions. This dependence was found to be sample-independent. We have also studied the diagonal resistivity at Landau level filling factor $ν=3/2$ where the system is known to be in a metallic state at high magnetic field and in an insulating state at low magnetic field. The temperature dependencies of resistivity at $B=0$ and at $ν=3/2$ were found to be identical. These behaviors suggest a true metal/insulator transition in the two dimensional electron system in silicon at $B=0$, in contrast with the well-known scaling theory.
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Submitted 22 December, 1994;
originally announced December 1994.
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Temperature Induced Transitions between Insulator, Metal, and Quantum Hall States
Authors:
S. V. Kravchenko,
Whitney Mason,
J. E. Furneaux,
J. M. Caulfield,
J. Singleton,
V. M. Pudalov
Abstract:
We report the observation of TEMPERATURE-INDUCED transitions between insulator, metal, and quantum-Hall behaviors for transport coefficients in the very dilute high mobility two-dimensional electron system in silicon. We consider the $ν=1$ quantum Hall effect at the border of it's existence, at very low electron density. Our data show that as the temperature decreases, the extended states at…
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We report the observation of TEMPERATURE-INDUCED transitions between insulator, metal, and quantum-Hall behaviors for transport coefficients in the very dilute high mobility two-dimensional electron system in silicon. We consider the $ν=1$ quantum Hall effect at the border of it's existence, at very low electron density. Our data show that as the temperature decreases, the extended states at $ν=1$ (above the Fermi level at higher temperature so that the system behaves as an insulator) sink below the Fermi energy, so that the quantum Hall effect occurs. As the extended states cross the Fermi level, the conductivity has a temperature dependence characteristic of a metallic system.
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Submitted 2 June, 1994;
originally announced June 1994.
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Possible Metal/Insulator Transition at B=0 in Two Dimensions
Authors:
S. V. Kravchenko,
G. V. Kravchenko,
J. E. Furneaux,
V. M. Pudalov,
M. D'Iorio
Abstract:
We have studied the zero magnetic field resistivity of unique high- mobility two-dimensional electron system in silicon. At very low electron density (but higher than some sample-dependent critical value, $n_{cr}\sim 10^{11}$ cm$^{-2}$), CONVENTIONAL WEAK LOCALIZATION IS OVERPOWERED BY A SHARP DROP OF RESISTIVITY BY AN ORDER OF MAGNITUDE with decreasing temperature below 1--2 K. No further evide…
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We have studied the zero magnetic field resistivity of unique high- mobility two-dimensional electron system in silicon. At very low electron density (but higher than some sample-dependent critical value, $n_{cr}\sim 10^{11}$ cm$^{-2}$), CONVENTIONAL WEAK LOCALIZATION IS OVERPOWERED BY A SHARP DROP OF RESISTIVITY BY AN ORDER OF MAGNITUDE with decreasing temperature below 1--2 K. No further evidence for electron localization is seen down to at least 20 mK. For $n_s<N_{cr}$, the sample is insulating. The resistivity is empirically found to SCALE WITH TEMPERATURE BOTH BELOW AND ABOVE $n_{cr}$ WITH A SINGLE PARAMETER which approaches zero at $n_s=n_{cr}$ suggesting a metal/ insulator phase transition.
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Submitted 26 May, 1994;
originally announced May 1994.
