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Reduction of radiative lifetime and slow-timescale spectral diffusion in InGaN polarized single-photon sources
Authors:
Tong Wang,
Tongtong Zhu,
Tim J. Puchtler,
Claudius C. Kocher,
Helen P. Springbett,
John C. Jarman,
Luke P. Nuttall,
Rachel A. Oliver,
Robert A. Taylor
Abstract:
Non-polar (11-20) a-plane quantum dots (QDs) are strong candidates for both > 200 K on-chip ultrafast polarized single-photon generation and the investigation of high temperature semiconductor QD photophysics. In this work, we report progress in the growth of a-plane InGaN QDs with a quasi-two-temperature method, which produces smooth epilayers and significantly reduced carrier trap** sites in t…
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Non-polar (11-20) a-plane quantum dots (QDs) are strong candidates for both > 200 K on-chip ultrafast polarized single-photon generation and the investigation of high temperature semiconductor QD photophysics. In this work, we report progress in the growth of a-plane InGaN QDs with a quasi-two-temperature method, which produces smooth epilayers and significantly reduced carrier trap** sites in the proximity of the QDs. Optical characterization has confirmed the ability of such QDs to emit polarized single photons and we have recorded a ~ 45% shorter average radiative lifetime and 65% reduction in the slow-timescale spectral diffusion compared to previous QDs. This growth method is an important development of the non-polar a-plane InGaN platform, opening up more possibilities in single-photon, lasing, and fundamental investigations.
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Submitted 19 September, 2019;
originally announced September 2019.
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Mitigating the photocurrent persistence of single ZnO nanowires for low noise photodetection applications
Authors:
J. ph Girard,
L. Giraudet,
S Kostcheev,
B Bercu,
T J Puchtler,
R A Taylor,
C Couteau
Abstract:
In this work, we investigate the optoelectronic properties of zinc oxide (ZnO) nanowires, which are good candidates for applications based on integrated optics. Single ZnO nanowire photodetectors were fabricated with ohmic contacts. By taking current transient measurements in different atmospheres (oxygen, air, vacuum and argon), and at various temperatures, we point out the importance of surface…
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In this work, we investigate the optoelectronic properties of zinc oxide (ZnO) nanowires, which are good candidates for applications based on integrated optics. Single ZnO nanowire photodetectors were fabricated with ohmic contacts. By taking current transient measurements in different atmospheres (oxygen, air, vacuum and argon), and at various temperatures, we point out the importance of surface effects on the electrical behaviour. Results confirm that oxygen chemisorption is responsible for the existence of a high photoconductive gain in these devices, and for the first time a two step process in the photocurrent rise transient is reported. A maximum gain of $G=7.8 \times 10^{7}$ is achieved. However, under certain conditions, the persistence of the photocurrent can last up to several hours and as such may prevent the device from operating at useful rates. From a knowledge of the photocurrent response mechanisms, we establish a method to restore the photodetector to its initial state, with very low dark current, by applying an appropriate gate voltage sequence. This advances the state of the art for these detectors towards commercial applications.
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Submitted 26 July, 2019;
originally announced July 2019.
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Two-dimensional Excitonic Photoluminescence in Graphene on Cu surface
Authors:
Youngsin Park,
Yoo S. Kim,
Chang Woo Myung,
Robert A. Taylor,
Christopher C. S. Chan,
Benjamin P. L. Reid,
Timothy J. Puchtler,
Robin J. Nicholas,
Tomba S. Laishram,
Geunsik Lee,
Chan C. Hwang,
Chong Yun Park,
Kwang S. Kim
Abstract:
Despite having outstanding electrical properties, graphene is unsuitable for optical devices because of its zero band gap. Here, we report two-dimensional excitonic photoluminescence (PL) from graphene grown on Cu(111) surface, which shows an unexpected remarkably sharp and strong emission near 3.16 eV (full-width at half-maximum $\leq$ 3meV) and multiple emissions around 3.18 eV. As temperature i…
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Despite having outstanding electrical properties, graphene is unsuitable for optical devices because of its zero band gap. Here, we report two-dimensional excitonic photoluminescence (PL) from graphene grown on Cu(111) surface, which shows an unexpected remarkably sharp and strong emission near 3.16 eV (full-width at half-maximum $\leq$ 3meV) and multiple emissions around 3.18 eV. As temperature increases, these emissions blue-shift, showing the characteristic negative thermal coefficient of graphene. Observed PLs originate from significantly suppressed dispersion of excited electrons in graphene caused by hybridization of graphene $π$ and Cu d orbitals of the 1st and 2nd Cu layers at a shifted saddle point 0.525(M+K) of Brillouin zone. This finding provides a new pathway to engineering novel optoelectronic graphene devices, whilst maintaining the outstanding electrical properties of graphene.
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Submitted 27 October, 2016;
originally announced October 2016.
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An ultrafast polarised single photon source at 220 K
Authors:
Tong Wang,
Tim J. Puchtler,
Tongtong Zhu,
John C. Jarman,
Luke P. Nuttall,
Rachel A. Oliver,
Robert A. Taylor
Abstract:
A crucial requirement for the realisation of efficient and scalable on-chip quantum communication is an ultrafast polarised single photon source operating beyond the Peltier cooling barrier of 200 K. While a few systems based on different materials and device structures have achieved single photon generation above this threshold, there has been no report of single quantum emitters with determinist…
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A crucial requirement for the realisation of efficient and scalable on-chip quantum communication is an ultrafast polarised single photon source operating beyond the Peltier cooling barrier of 200 K. While a few systems based on different materials and device structures have achieved single photon generation above this threshold, there has been no report of single quantum emitters with deterministic polarisation properties at the same high temperature conditions. Here, we report the first device to simultaneously achieve single photon emission with a g(2)(0) of only 0.21, a high polarisation degree of 0.80, a fixed polarisation axis determined by the underlying crystallography, and a GHz repetition rate with a radiative lifetime of 357 ps at 220 K. The temperature insensitivity of these properties, together with the simple planar growth method, and absence of complex device geometries, makes this system an excellent candidate for on-chip applications in integrated systems.
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Submitted 1 October, 2016;
originally announced October 2016.
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Ultrafast, polarized, single-photon emission from m-plane InGaN Quantum Dots on GaN nanowires
Authors:
Tim J. Puchtler,
Tong Wang,
Christopher X. Ren,
Fengzai Tang,
Rachel A. Oliver,
Robert A. Taylor,
Tongtong Zhu
Abstract:
We demonstrate single photon emission from self-assembled m-plane InGaN quantum dots (QDs) embedded on the side-walls of GaN nanowires. A combination of electron microscopy, cathodoluminescence, time-resolved micro-PL and photon autocorrelation experiments give a thorough evaluation of the QDs structural and optical properties. The QD exhibits anti-bunched emission up to 100 K, with a measured aut…
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We demonstrate single photon emission from self-assembled m-plane InGaN quantum dots (QDs) embedded on the side-walls of GaN nanowires. A combination of electron microscopy, cathodoluminescence, time-resolved micro-PL and photon autocorrelation experiments give a thorough evaluation of the QDs structural and optical properties. The QD exhibits anti-bunched emission up to 100 K, with a measured autocorrelation function of g^2(0) = 0.28 (0.03) at 5 K. Studies on a statistically significant number of QDs show that these m-plane QDs exhibit very fast radiative lifetimes (260 +/- 55 ps) suggesting smaller internal fields than any of the previously reported c-plane and a-plane QDs. Moreover, the observed single photons are almost completely linearly polarized aligned perpendicular to the crystallographic c-axis with a degree of linear polarization of 0.84 +/- 0.12. Such InGaN QDs incorporated in a nanowire system meet many of the requirements for implementation into quantum information systems and could potentially open the door to wholly new device concepts.
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Submitted 27 September, 2016; v1 submitted 23 September, 2016;
originally announced September 2016.
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Experimental and theoretical analyses of strongly polarized photon emission from non-polar InGaN quantum dots
Authors:
Tong Wang,
Tim J. Puchtler,
Saroj Kanta Patra,
Tongtong Zhu,
Muhammad Ali,
Tom Badcock,
Tao Ding,
Rachel A. Oliver,
Stefan Schulz,
Robert A. Taylor
Abstract:
We present a comprehensive investigation of the polarization properties of non-polar a-plane InGaN quantum dots (QDs) and their origin with statistically significant experimental data and rigorous k.p modelling. The unbiased selection and study of 180 individual QDs allow us to compute an average polarization degree of 0.90, with a standard deviation of only 0.08. When coupled with theoretical ins…
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We present a comprehensive investigation of the polarization properties of non-polar a-plane InGaN quantum dots (QDs) and their origin with statistically significant experimental data and rigorous k.p modelling. The unbiased selection and study of 180 individual QDs allow us to compute an average polarization degree of 0.90, with a standard deviation of only 0.08. When coupled with theoretical insights, we show that a-plane InGaN QDs are highly insensitive to size differences, shape anisotropies, and indium content fluctuations. Furthermore, 91% of the studied QDs exhibit a polarization axis along the crystal [1-100] axis, with the other 9% polarized orthogonal to this direction. When coupled with their ability to emit single-photons, a-plane QDs are good candidates for the generation of linearly polarized single-photons, a feature attractive for quantum cryptography protocols.
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Submitted 19 November, 2016; v1 submitted 22 September, 2016;
originally announced September 2016.
