-
Simultaneous Measurement of Mid-Infrared Refractive Indices in Thin-Film Heterostructures: Methodology and Results for GaAs/AlGaAs
Authors:
Lukas W. Perner,
Gar-Wing Truong,
David Follman,
Maximilian Prinz,
Georg Winkler,
Stephan Puchegger,
Garrett D. Cole,
Oliver H. Heckl
Abstract:
We present our results for simultaneous measurement of the refractive indices of gallium arsenide (GaAs) and aluminum gallium arsenide (Al$_\mathrm{x}$Ga$_\mathrm{1-x}$As) from $2.0$ to $7.1\,\mathrm{μm}$ ($5000$ to $1400\,\mathrm{cm^{-1}}$). We obtain these values from a monocrystalline superlattice Bragg mirror of excellent purity (background do** $\leq 1 \times 10^{-14}\,\mathrm{cm^{-3}}$), g…
▽ More
We present our results for simultaneous measurement of the refractive indices of gallium arsenide (GaAs) and aluminum gallium arsenide (Al$_\mathrm{x}$Ga$_\mathrm{1-x}$As) from $2.0$ to $7.1\,\mathrm{μm}$ ($5000$ to $1400\,\mathrm{cm^{-1}}$). We obtain these values from a monocrystalline superlattice Bragg mirror of excellent purity (background do** $\leq 1 \times 10^{-14}\,\mathrm{cm^{-3}}$), grown via molecular beam epitaxy. To recover the refractive indices over such a broad wavelength range, we fit a dispersion model for each material. In a novel combination of well-established methods, we measure both a photometrically accurate transmittance spectrum of the Bragg mirror via Fourier-transform infrared spectrometry and the individual physical layer thicknesses of the structure via scanning electron microscopy. To infer the uncertainty of the refractive index values, we estimate relevant measurement uncertainties and propagate them via a Monte-Carlo method. This highly-adaptable approach conclusively yields propagated relative uncertainties on the order of $10^{-4}$ over the measured spectral range for both GaAs and Al$_{0.929}$Ga$_{0.071}$As. The fitted model can also approximate the refractive index for MBE-grown Al$_\mathrm{x}$Ga$_\mathrm{1-x}$As for $0\leq x \leq 1$. Both these updated values and the measurement approach will be essential in the design, fabrication, and characterization of next-generation active and passive optical devices in a spectral region that is of high interest in many fields, e.g., laser design and cavity-enhanced spectroscopy in the mid-infrared spectral region.
△ Less
Submitted 16 May, 2023; v1 submitted 18 January, 2023;
originally announced January 2023.
-
Precise Measurement of Refractive Indices in Thin Film Heterostructures
Authors:
Lukas W. Perner,
Gar-Wing Truong,
David Follman,
Maximilian Prinz,
Georg Winkler,
Stephan Puchegger,
Garrett D. Cole,
Oliver H. Heckl
Abstract:
We present a robust, precise, and accurate method to simultaneously measure the refractive indices of two transparent materials within an interference coating. This is achieved by measuring both a photometrically accurate transmittance spectrum and the as-grown individual layer thicknesses of a thin-film multilayer structure. These measurements are used for a TMM-based curve-fitting routine which…
▽ More
We present a robust, precise, and accurate method to simultaneously measure the refractive indices of two transparent materials within an interference coating. This is achieved by measuring both a photometrically accurate transmittance spectrum and the as-grown individual layer thicknesses of a thin-film multilayer structure. These measurements are used for a TMM-based curve-fitting routine which extracts the refractive indices and their measurement uncertainties via a Monte-Carlo-type error propagation. We demonstrate the performance of this approach by experimentally measuring the refractive indices of both, GaAs and Al$_{0.929}$Ga$_{0.071}$As, as present in an epitaxial distributed Bragg reflector. A variety of devices can be used to obtain the transmittance spectrum (e.g., FTIR, grating-based spectrophotometer) and layer thicknesses (e.g., SEM, TEM, AFM), the discussed approach is readily adaptable to virtually any wavelength region and many transparent material combinations of interest. The subsequent model-fitting approach yields refractive index values with $10^{-4}$-level uncertainty for both materials.
△ Less
Submitted 18 January, 2023;
originally announced January 2023.
-
Mid-infrared monocrystalline interference coatings with excess optical loss below 10 ppm
Authors:
G. Winkler,
L. W. Perner,
G. -W. Truong,
G. Zhao,
D. Bachmann,
A. S. Mayer,
J. Fellinger,
D. Follman,
P. Heu,
C. Deutsch,
D. M. Bailey,
H. Peelaers,
S. Puchegger,
A. J. Fleisher,
G. D. Cole,
O. H. Heckl
Abstract:
We present high-reflectivity substrate-transferred single-crystal GaAs/AlGaAs interference coatings at a center wavelength of 4.54 um with record-low excess optical loss below 10 parts per million. These high-performance mirrors are realized via a novel microfabrication process that differs significantly from the production of amorphous multilayers generated via physical vapor deposition processes…
▽ More
We present high-reflectivity substrate-transferred single-crystal GaAs/AlGaAs interference coatings at a center wavelength of 4.54 um with record-low excess optical loss below 10 parts per million. These high-performance mirrors are realized via a novel microfabrication process that differs significantly from the production of amorphous multilayers generated via physical vapor deposition processes. This new process enables reduced scatter loss due to the low surface and interfacial roughness, while low background do** in epitaxial growth ensures strongly reduced absorption. We report on a suite of optical measurements, including cavity ring-down, transmittance spectroscopy, and direct absorption tests to reveal the optical losses for a set of prototype mirrors. In the course of these measurements, we observe a unique polarization-orientation-dependent loss mechanism which we attribute to elastic anisotropy of these strained epitaxial multilayers. A future increase in layer count and a corresponding reduction of transmittance will enable optical resonators with a finesse in excess of 100 000 in the mid-infrared spectral region, allowing for advances in high resolution spectroscopy, narrow-linewidth laser stabilization, and ultrasensitive measurements of various light-matter interactions.
△ Less
Submitted 10 September, 2020;
originally announced September 2020.
-
On Ni-Sb-Sn based skutterudites
Authors:
W. Paschinger,
P. F. Rogl,
G. Rogl,
A. Grytsiv,
E. Bauer,
H. Michor,
Ch. Eisenmenger-Sitter,
E. Royanian,
P. R. Heinrich,
M. Zehetbauer,
J. Horky,
S. Puchegger,
M. Reinecker,
G. Giester,
P. Broz,
A. Bismarck
Abstract:
Novel filled skutterudites EpyNi4Sb12-xSnx (Ep = Ba and La) have been prepared by arc melting followed by annealing at 250C, 350C and 450C up to 30 days in sealed quartz vials. A maximum filling level of y = 0.93 and y = 0.65 was achieved for the Ba and La filled skutterudite, respectively. Single-phase samples with the composition Ni4Sb8.2Sn3.8, Ba0.42Ni4Sb8.2Sn3.8 and Ba0.92Ni4Sb6.7Sn5.3 were em…
▽ More
Novel filled skutterudites EpyNi4Sb12-xSnx (Ep = Ba and La) have been prepared by arc melting followed by annealing at 250C, 350C and 450C up to 30 days in sealed quartz vials. A maximum filling level of y = 0.93 and y = 0.65 was achieved for the Ba and La filled skutterudite, respectively. Single-phase samples with the composition Ni4Sb8.2Sn3.8, Ba0.42Ni4Sb8.2Sn3.8 and Ba0.92Ni4Sb6.7Sn5.3 were employed for measurements of the physical properties i.e. temperature dependent electrical resistivity, Seebeck coefficient and thermal conductivity.
Resistivity data showed a crossover from metallic to semiconducting behaviour. The corresponding gap width was extracted from maxima in the Seebeck coefficient data as a function of temperature. Temperature dependent single crystal X-ray structure analyses (at 100 K, 200 K and 300 K) revealed the thermal expansion coefficients, Einstein and Debye temperatures for two selected samples Ba0.73Ni4Sb8.1Sn3.9 and Ba0.95Ni4Sb6.1Sn5.9. These data compare well with Debye temperatures from measurements of specific heat (4.4 K < T < 200 K).
Several mechanical properties were measured and evaluated. Thermal expansion coefficients are 11.8.10-6 K-1 for Ni4Sb8.2Sn3.8 to 13.8.10-6 K-1 for Ba0.92Ni4Sb6.7Sn5.3. Room temperature Vicker's hardness values (up to a load of 24.5 mN) vary within the range of 2.6 GPa to 4.7 GPa. Severe plastic deformation (SPD) via high-pressure torsion (HPT) was used to introduce nanostructuring. Physical properties before and after HPT were compared, showing no significant effect on the material's thermoelectric behaviour.
△ Less
Submitted 15 February, 2017;
originally announced February 2017.
