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Orbital magnetic susceptibility of multifold fermions
Authors:
D. A. Pshenay-Severin,
A. T. Burkov
Abstract:
Topological semimetals are intensively studied in recent years. Besides the well known Weyl and Dirac semimetals, some materials posses nodes with linear crossing of multiple bands. Low energy excitations around these nodes are called multifold fermions and can be described by $\mathbf{k}\cdot\mathbf{p}$ Hamiltonian with pseudospin greater than 1/2. In the present work we investigated the contribu…
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Topological semimetals are intensively studied in recent years. Besides the well known Weyl and Dirac semimetals, some materials posses nodes with linear crossing of multiple bands. Low energy excitations around these nodes are called multifold fermions and can be described by $\mathbf{k}\cdot\mathbf{p}$ Hamiltonian with pseudospin greater than 1/2. In the present work we investigated the contribution of these states into orbital magnetic susceptibility $χ$. We have found that, similarly to Weyl semimetals, the dependence of susceptibility on chemical potential $μ$ shows an extremum when $μ$ is close to the band crossing energy. In the case of half-integer pseudospin this extremum is a minumum and the susceptibility is negative (diamagnetic). While in the case of integer pseudospin the susceptibility is large and positive (paramagnetic) due to the contribution of dispersionless band. This leads also to nonmonotonic temperature dependence of $χ$. As an example, we considered the case of cobalt monosilicide where the states near the $Γ$ point correspond to pseudospin 1 without spin-orbital interaction, and to a combination of Weyl node and pseudospin-3/2 states with the account of spin-orbit coupling.
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Submitted 8 July, 2024;
originally announced July 2024.
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Low-temperature thermal conductivity of Co$_{1-x}$M$_x$Si (M=Fe, Ni) alloys
Authors:
Yu. V. Ivanov,
A. A. Levin,
S. V. Novikov,
D. A. Pshenay-Severin,
M. P. Volkov,
A. Yu. Zyuzin,
A. T. Burkov,
T. Nakama,
L. U. Schnatmann,
H. Reith,
K. Nielsch
Abstract:
We study the low-temperature electrical and thermal conductivity of CoSi and Co$_{1-x}$M$_x$Si alloys (M = Fe, Ni; $x \leq$ 0.06). Measurements show that the low-temperature electrical conductivity of Co$_{1-x}$Fe$_{x}$Si alloys decreases at $x > $ 0.01 by an order of magnitude compared with that of pure CoSi. It was expected that both the lattice and electronic contributions to thermal conductivi…
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We study the low-temperature electrical and thermal conductivity of CoSi and Co$_{1-x}$M$_x$Si alloys (M = Fe, Ni; $x \leq$ 0.06). Measurements show that the low-temperature electrical conductivity of Co$_{1-x}$Fe$_{x}$Si alloys decreases at $x > $ 0.01 by an order of magnitude compared with that of pure CoSi. It was expected that both the lattice and electronic contributions to thermal conductivity would decrease in the alloys. However, our experimental results revealed that at temperatures below 20K the thermal conductivity of Fe- and Ni-containing alloys is several times larger than that of pure CoSi. We discuss possible mechanisms of the thermal conductivity enhancement. The most probable one is related to the dominant scattering of phonons by charge carriers. We propose a simple theoretical model that takes into account the complex semimetallic electronic structure of CoSi with nonequivalent valleys, and show that it explains well the increase of the lattice thermal conductivity with increasing disorder and the linear temperature dependence of the thermal conductivity in the Co$_{1-x}$Fe$_x$Si alloys below 20K.
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Submitted 19 October, 2020; v1 submitted 1 October, 2020;
originally announced October 2020.
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The effect of energy-dependent electron scattering on thermoelectric transport in novel topological semimetal CoSi
Authors:
D. A. Pshenay-Severin,
Y. V. Ivanov,
A. T. Burkov
Abstract:
These compounds have long been known as promising thermoelectric materials. Recently it was revealed, that they also have unconventional electronic topology. This renewed interest to the investigation of their transport properties. In order to improve theoretical description of thermoelectric transport in these compounds, we take into account electron scattering beyond commonly used constant relax…
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These compounds have long been known as promising thermoelectric materials. Recently it was revealed, that they also have unconventional electronic topology. This renewed interest to the investigation of their transport properties. In order to improve theoretical description of thermoelectric transport in these compounds, we take into account electron scattering beyond commonly used constant relaxation time approximation. Using first principle calculations, we investigate the scattering of charge carriers by phonons and point defects. The dependence of the scattering rate on the energy correlates with that for the total density of states. This implies that in this material not only the intraband, but also the interband scattering is important, especially for bands with low density of states. The Seebeck coefficient and the electrical resistivity of CoSi and of dilute solid solutions Co$_{1-x}$M$_x$Si (M=Fe or Ni, $x<0.1$) are calculated as a function of temperature and the alloy composition. We show that the account of strong energy dependence of relaxation time is important for the description of experimentally observed rapid increase of the resistivity and qualitative change of its temperature dependence with the substitution of cobalt for iron, as well as for the description of the magnitude of the Seebeck coefficient, its temperature and composition dependence.
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Submitted 28 August, 2018; v1 submitted 29 May, 2018;
originally announced May 2018.
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Band structure and unconventional electronic topology of CoSi
Authors:
D. A. Pshenay-Severin,
Yu. V. Ivanov,
A. A. Burkov,
A. T. Burkov
Abstract:
Crystalline semimetals with certain space group symmetries may possess unusual electronic structure topology, distinct from the conventional Weyl and Dirac semimetals. Characteristic property of these materials is the existence of band-touching points with multiple (higher than two-fold) degeneracy and nonzero topological charge. CoSi is a representative of this group of materials exhibiting the s…
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Crystalline semimetals with certain space group symmetries may possess unusual electronic structure topology, distinct from the conventional Weyl and Dirac semimetals. Characteristic property of these materials is the existence of band-touching points with multiple (higher than two-fold) degeneracy and nonzero topological charge. CoSi is a representative of this group of materials exhibiting the so-called "new fermions". We report on an ab initio calculation of the electronic structure of CoSi using density functional methods, taking into account the spin-orbit interactions. We demonstrate the existence of band-touching nodes with four- and six-fold degeneracy, located at the $Γ$ and $R$ points in the first Brillouin zone and near the Fermi energy. We show that these band-touching points carry topological charges of $\pm 4$ and describe the resulting Fermi arc surface states, connecting the projections of these nodes onto the surface Brillouin zone. We also discuss the influence of many body $G_0W_0$ corrections on the electronic band structure and the topological properties of CoSi.
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Submitted 25 December, 2017; v1 submitted 19 October, 2017;
originally announced October 2017.
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The influence of phonon thermal conductivity on thermoelectric figure of merit of bulk nanostructured materials with tunneling contacts
Authors:
L. P. Bulat,
D. Kossakovski,
D. A. Pshenay-Severin
Abstract:
A composite material is considered which consists of conducting nanoparticles separated by tunneling dielectric barriers. The influence of the phonon thermal conductivity of dielectric matrix on the thermoelectric figure of merit of this composite material is theoretically in-vestigated. The range of values and barrier parameters that can lead to the thermoelectric figure of merit greater than uni…
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A composite material is considered which consists of conducting nanoparticles separated by tunneling dielectric barriers. The influence of the phonon thermal conductivity of dielectric matrix on the thermoelectric figure of merit of this composite material is theoretically in-vestigated. The range of values and barrier parameters that can lead to the thermoelectric figure of merit greater than unity is estimated. The influence of space charge and nonlinearity of current-voltage relations of tunneling barrier are also discussed.
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Submitted 20 September, 2012;
originally announced September 2012.