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Low-dose, high-resolution CT of infant-sized lungs via propagation-based phase contrast
Authors:
James A. Pollock,
Kaye Morgan,
Linda C. P. Croton,
Emily J. Pryor,
Kelly J. Crossley,
Christopher J. Hall,
Daniel Hausermann,
Anton Maksimenko,
Stuart B. Hooper,
Marcus J. Kitchen
Abstract:
Many lung diseases and abnormalities require detailed visualisation of the lungs for accurate diagnosis and treatment. High-resolution computed tomography (CT) is the gold-standard technique for non-invasive lung disease detection, but it presents a risk to the patient through the relatively high ionising radiation dose required. Utilising the X-ray phase information may allow improvements in imag…
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Many lung diseases and abnormalities require detailed visualisation of the lungs for accurate diagnosis and treatment. High-resolution computed tomography (CT) is the gold-standard technique for non-invasive lung disease detection, but it presents a risk to the patient through the relatively high ionising radiation dose required. Utilising the X-ray phase information may allow improvements in image resolution at equal or lower radiation levels than current clinical imaging. Propagation-based phase-contrast imaging requires minimal adaption of existing medical systems, and is well suited to lung imaging due to the strong phase gradients introduced by the lung-air material interface. Herein, propagation-based phase contrast CT is demonstrated for large animals, namely lambs, as a model for paediatric patients, using monochromatic radiation and a photon-counting detector at the Imaging and Medical Beamline of the Australian Synchrotron. Image quality, normalised against radiation dose, was optimised as a function of the beam energy and propagation distance, with the optimal conditions used to test the available image quality at very low radiation dose. Noise-limited spatial resolution was measured using Fourier ring correlation, and dosimetry was performed through Monte Carlo simulation calibrated against air kerma. The resulting CT images demonstrate superior resolution to existing high-resolution CT systems, pushing dose to the quantum limit to comply with current Australian guidelines for infant chest CT exposure (<2.5 mSv effective dose). Constituent raw projections are shown to have significant proportions of pixels with zero photon counts that would create severe information loss in conventional CT, which was prevented through phase retrieval.
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Submitted 8 July, 2024;
originally announced July 2024.
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Attention Networks for Personalized Mealtime Insulin Dosing in People with Type 1 Diabetes
Authors:
Anas El Fathi,
Elliott Pryor,
Marc D. Breton
Abstract:
Calculating mealtime insulin doses poses a significant challenge for individuals with Type 1 Diabetes (T1D). Doses should perfectly compensate for expected post-meal glucose excursions, requiring a profound understanding of the individual's insulin sensitivity and the meal macronutrients'. Usually, people rely on intuition and experience to develop this understanding. In this work, we demonstrate…
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Calculating mealtime insulin doses poses a significant challenge for individuals with Type 1 Diabetes (T1D). Doses should perfectly compensate for expected post-meal glucose excursions, requiring a profound understanding of the individual's insulin sensitivity and the meal macronutrients'. Usually, people rely on intuition and experience to develop this understanding. In this work, we demonstrate how a reinforcement learning agent, employing a self-attention encoder network, can effectively mimic and enhance this intuitive process. Trained on 80 virtual subjects from the FDA-approved UVA/Padova T1D adult cohort and tested on twenty, self-attention demonstrates superior performance compared to other network architectures. Results reveal a significant reduction in glycemic risk, from 16.5 to 9.6 in scenarios using sensor-augmented pump and from 9.1 to 6.7 in scenarios using automated insulin delivery. This new paradigm bypasses conventional therapy parameters, offering the potential to simplify treatment and promising improved quality of life and glycemic outcomes for people with T1D.
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Submitted 18 June, 2024;
originally announced June 2024.
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Fine structure splitting cancellation in highly asymmetric InAs/InP droplet epitaxy quantum dots
Authors:
N. R. S. van Venrooij,
A. R. da Cruz,
R. S. R. Gajjella,
P. M. Koenraad,
Craig E. Pryor,
Michael E. Flatté
Abstract:
We find the single exciton's fine structure splitting (FSS), which splits its degenerate ground state manifold into singlets, nearly vanishes in highly asymmetric quantum dots due to the cancellation of splitting effects with markedly different origin. The dots simulated are those that emerge on top of etch pits through the droplet epitaxy growth process; these etch pit dots break square (…
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We find the single exciton's fine structure splitting (FSS), which splits its degenerate ground state manifold into singlets, nearly vanishes in highly asymmetric quantum dots due to the cancellation of splitting effects with markedly different origin. The dots simulated are those that emerge on top of etch pits through the droplet epitaxy growth process; these etch pit dots break square ($C_{4v}$) spatial symmetry, which has been previously associated with small FSS. Configuration interaction calculations predict a vanishing FSS at a specific finite etch pit displacement from the center of the dot, for a structure far from square symmetry. We thus predict that highly asymmetric quantum dots may still display negligible fine structure splitting, providing new avenues for high-fidelity generation of indistinguishable, polarization entangled photon pairs on demand.
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Submitted 26 September, 2023;
originally announced September 2023.
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Accurate measures of regional lung air volumes from chest X-rays of small animals
Authors:
D. W. O'Connell,
K. S. Morgan,
G. Ruben,
L. C. P. Croton,
J. A. Pollock,
M. K. Croughan,
E. V. McGillick,
M. J. Wallace,
K. J. Crossley,
E. J. Pryor,
R. A. Lewis,
S. B. Hooper,
M. J. Kitchen
Abstract:
We present a robust technique for calculating regional volume changes within the lung from X-ray radiograph sequences captured during ventilation, without the use of computed tomography (CT). This technique is based on the change in transmitted X-ray intensity that occurs for each lung region as air displaces the attenuating lung tissue. Lung air volumes calculated from X-ray intensity changes sho…
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We present a robust technique for calculating regional volume changes within the lung from X-ray radiograph sequences captured during ventilation, without the use of computed tomography (CT). This technique is based on the change in transmitted X-ray intensity that occurs for each lung region as air displaces the attenuating lung tissue. Lung air volumes calculated from X-ray intensity changes showed a strong correlation ($R^2$=0.98) against the true volumes, measured from high-resolution CT. This correlation enables us to accurately convert projected intensity data into relative changes in lung air volume. We have applied this technique to measure changes in regional lung volumes from X-ray image sequences of mechanically ventilated, recently-deceased newborn rabbits, without the use of CT. This method is suitable for biomedical research studies and shows potential for clinical application.
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Submitted 7 April, 2022; v1 submitted 16 February, 2022;
originally announced February 2022.
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Electronic Structure and Optical Properties of the Lonsdaleite Phase of Si, Ge and diamond
Authors:
Amrit De,
Craig E. Pryor
Abstract:
Crystalline semiconductors may exist in different polytypic phases with significantly different electronic and optical properties. In this paper, we calculate the electronic structure and optical properties of diamond, Si and Ge in the lonsdaleite (hexagonal-diamond) phase. We use an empirical pseudopotentials method based on transferable model potentials, including spin-orbit interactions. We obt…
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Crystalline semiconductors may exist in different polytypic phases with significantly different electronic and optical properties. In this paper, we calculate the electronic structure and optical properties of diamond, Si and Ge in the lonsdaleite (hexagonal-diamond) phase. We use an empirical pseudopotentials method based on transferable model potentials, including spin-orbit interactions. We obtain band structures, densities of states and complex dielectric functions calculated in the dipole approximation for light polarized perpendicular and parallel to the c-axis of the crystal. We find strong polarization dependent optical anisotropy. Simple analytical expressions are provided for the dispersion relations. We find that in the lonsdaleite phase, diamond and Si remain indirect gap semiconductors while Ge is transformed into a direct gap semiconductor with a significantly smaller band gap.
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Submitted 27 October, 2012;
originally announced October 2012.
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g-Factors and diamagnetic coefficients of electrons, holes and excitons in InAs/InP quantum dots
Authors:
J. van Bree,
A. Yu. Silov,
P. M. Koenraad,
M. E. Flatté,
C. E. Pryor
Abstract:
The electron, hole, and exciton g-factors and diamagnetic coefficients have been calculated using envelope-function theory for cylindrical InAs/InP quantum dots in the presence of a magnetic field parallel to the dot symmetry axis. A clear connection is established between the electron g-factor and the amplitude of the those valence-state envelope functions which possess non-zero orbital momentum…
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The electron, hole, and exciton g-factors and diamagnetic coefficients have been calculated using envelope-function theory for cylindrical InAs/InP quantum dots in the presence of a magnetic field parallel to the dot symmetry axis. A clear connection is established between the electron g-factor and the amplitude of the those valence-state envelope functions which possess non-zero orbital momentum associated with the envelope function. The dependence of the exciton diamagnetic coefficients on the quantum dot height is found to correlate with the energy dependence of the effective mass. Calculated exciton g-factor and diamagnetic coefficients, constructed from the values associated with the electron and hole constituents of the exciton, match experimental data well, however including the Coulomb interaction between the electron and hole states improves the agreement. Remote-band contributions to the valence-band electronic structure, included perturbatively, reduce the agreement between theory and experiment.
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Submitted 23 November, 2011;
originally announced November 2011.
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Electric-field Manipulation of the Lande' g Tensor of Holes in In0.5Ga0.5As/GaAs Self-assembled Quantum Dots
Authors:
Joseph **enot,
Craig E. Pryor,
Michael E. Flatté
Abstract:
The effect of an electric field on spin precession in In0.5Ga0.5As/GaAs self-assembled quantum dots is calculated using multiband real-space envelope-function theory. The dependence of the Lande' g tensor on electric fields should permit high-frequency g tensor modulation resonance, as well as direct, nonresonant electric-field control of the hole spin. Subharmonic resonances have also been found…
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The effect of an electric field on spin precession in In0.5Ga0.5As/GaAs self-assembled quantum dots is calculated using multiband real-space envelope-function theory. The dependence of the Lande' g tensor on electric fields should permit high-frequency g tensor modulation resonance, as well as direct, nonresonant electric-field control of the hole spin. Subharmonic resonances have also been found in g tensor modulation resonance of the holes, due to the strong quadratic dependence of components of the hole g tensor on the electric field.
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Submitted 23 November, 2010;
originally announced November 2010.
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Optical Dielectric Functions of III-V Semiconductors in Wurtzite Phase
Authors:
Amrit De,
Craig E. Pryor
Abstract:
Optical properties of semiconductors can exhibit strong polarization dependence due to crystalline anisotropy. A number of recent experiments have shown that the photoluminescence intensity in free standing nanowires is polarization dependent. One contribution to this effect is the anisotropy of the dielectric function due to the fact that most nanowires crystalize in the wurtzite form. While litt…
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Optical properties of semiconductors can exhibit strong polarization dependence due to crystalline anisotropy. A number of recent experiments have shown that the photoluminescence intensity in free standing nanowires is polarization dependent. One contribution to this effect is the anisotropy of the dielectric function due to the fact that most nanowires crystalize in the wurtzite form. While little is known experimentally about the band structures wurtzite phase III-V semiconductors, we have previously predicted the bulk band structure of nine III-V semiconductors in wurtzite phase.Here, we predict the frequency dependent dielectric functions for nine non-Nitride wurtzite phase III-V semiconductors (AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs and InSb). Their complex dielectric functions are calculated in the dipole approximation by evaluating the momentum matrix elements on a dense grid of special k-points using empirical pseudopotential wave functions. Corrections to the momentum matrix elements accounting for the missing core states are made using a scaling factor which is determined by using the optical sum rules on the calculated dielectric functions for the zincblende polytypes. The dielectric function is calculated for polarizations perpendicular and parallel to the c-axis of the crystal.
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Submitted 12 November, 2010;
originally announced November 2010.
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Electrical manipulation of an electronic two-state system in Ge/Si quantum dots
Authors:
C. E. Pryor,
M. E. Flatté,
J. Levy
Abstract:
We calculate that the electron states of strained self-assembled Ge/Si quantum dots provide a convenient two-state system for electrical control. An electronic state localized at the apex of the quantum dot is nearly degenerate with a state localized at the base of the quantum dot. Small electric fields shift the electronic ground state from apex-localized to base-localized, which permits sensit…
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We calculate that the electron states of strained self-assembled Ge/Si quantum dots provide a convenient two-state system for electrical control. An electronic state localized at the apex of the quantum dot is nearly degenerate with a state localized at the base of the quantum dot. Small electric fields shift the electronic ground state from apex-localized to base-localized, which permits sensitive tuning of the electronic, optical and magnetic properties of the dot. As one example, we describe how spin-spin coupling between two Ge/Si dots can be controlled very sensitively by shifting the individual dot's electronic ground state between apex and base.
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Submitted 23 September, 2009;
originally announced September 2009.
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Predicted band structures of III-V semiconductors in wurtzite phase
Authors:
Amrit De,
Craig E. Pryor
Abstract:
While non-nitride III-V semiconductors typically have a zincblende structure, they may also form wurtzite crystals under pressure or when grown as nanowhiskers. This makes electronic structure calculation difficult since the band structures of wurtzite III-V semiconductors are poorly characterized. We have calculated the electronic band structure for nine III-V semiconductors in the wurtzite pha…
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While non-nitride III-V semiconductors typically have a zincblende structure, they may also form wurtzite crystals under pressure or when grown as nanowhiskers. This makes electronic structure calculation difficult since the band structures of wurtzite III-V semiconductors are poorly characterized. We have calculated the electronic band structure for nine III-V semiconductors in the wurtzite phase using transferable empirical pseudopotentials including spin-orbit coupling. We find that all the materials have direct gaps. Our results differ significantly from earlier {\it ab initio} calculations, and where experimental results are available (InP, InAs and GaAs) our calculated band gaps are in good agreement. We tabulate energies, effective masses, and linear and cubic Dresselhaus zero-field spin-splitting coefficients for the zone-center states. The large zero-field spin-splitting coefficients we find may lead to new functionalities for designing devices that manipulate spin degrees of freedom.
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Submitted 13 August, 2009;
originally announced August 2009.
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Electric-field control of a hydrogenic donor's spin in a semiconductor
Authors:
A. De,
Craig E. Pryor,
Michael E. Flatté
Abstract:
An AC electric field applied to a donor-bound electron in a semiconductor modulates the orbital character of its wave function, which affects the electron's spin dynamics via the spin-orbit interaction. Numerical calculations of the spin dynamics of a hydrogenic donor (Si) embedded in GaAs, using a real-space multi-band k.p formalism, show the high symmetry of the hydrogenic donor state results…
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An AC electric field applied to a donor-bound electron in a semiconductor modulates the orbital character of its wave function, which affects the electron's spin dynamics via the spin-orbit interaction. Numerical calculations of the spin dynamics of a hydrogenic donor (Si) embedded in GaAs, using a real-space multi-band k.p formalism, show the high symmetry of the hydrogenic donor state results in strongly nonlinear dependences of the electronic g tensor on applied fields. A nontrivial consequence is that the most rapid Rabi oscillations occur for electric fields modulated at a subharmonic of the Larmor frequency.
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Submitted 1 August, 2008;
originally announced August 2008.
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A semiconductor exciton memory cell based on a single quantum nanostructure
Authors:
H. J. Krenner,
C. E. Pryor,
J. He,
P. M. Petroff
Abstract:
We demonstrate storage of excitons in a single nanostructure, a self-assembled Quantum Post. After generation electron and holes forming the exciton are separated by an electric field towards opposite ends of the Quantum Post inhibiting their radiative recombination. After a defined time such spatially indirect excitons are reconverted to optically active direct excitons by switching the electri…
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We demonstrate storage of excitons in a single nanostructure, a self-assembled Quantum Post. After generation electron and holes forming the exciton are separated by an electric field towards opposite ends of the Quantum Post inhibiting their radiative recombination. After a defined time such spatially indirect excitons are reconverted to optically active direct excitons by switching the electric field. The emitted light of the stored exciton is detected in the limit of a single nanostructure and storage times exceeding 30 msec are demonstrated. We identify a slow tunneling of the electron out of the Quantum Post as the dominant loss mechanism by comparing the field dependent temporal decay of the storage signal to models for this process and radiative losses.
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Submitted 13 May, 2008;
originally announced May 2008.
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Method for Full Bloch-Sphere Control of a Localized Spin via a Single Electrical Gate
Authors:
Joseph **enot,
Craig E. Pryor,
Michael E. Flatté
Abstract:
We calculate the dependence on an applied electric field of the g tensor of a single electron in a self-assembled InAs/GaAs quantum dot. We identify dot sizes and shapes for which one in-plane component of the g tensor changes sign for realistic electric fields, and show this should permit full Bloch-sphere control of the electron spin in the quantum dot using only a static magnetic field and a…
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We calculate the dependence on an applied electric field of the g tensor of a single electron in a self-assembled InAs/GaAs quantum dot. We identify dot sizes and shapes for which one in-plane component of the g tensor changes sign for realistic electric fields, and show this should permit full Bloch-sphere control of the electron spin in the quantum dot using only a static magnetic field and a single vertical electric gate.
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Submitted 5 March, 2008;
originally announced March 2008.
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Band-edge diagrams for strained III-V semiconductor quantum wells, wires, and dots
Authors:
C. E. Pryor,
M. -E. Pistol
Abstract:
We have calculated band-edge energies for most combinations of zincblende AlN, GaN, InN, GaP, GaAs, InP, InAs, GaSb and InSb in which one material is strained to the other. Calculations were done for three different geometries, quantum wells, wires, and dots, and mean effective masses were computed in order to estimate confinement energies. For quantum wells, we have also calculated band-edges f…
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We have calculated band-edge energies for most combinations of zincblende AlN, GaN, InN, GaP, GaAs, InP, InAs, GaSb and InSb in which one material is strained to the other. Calculations were done for three different geometries, quantum wells, wires, and dots, and mean effective masses were computed in order to estimate confinement energies. For quantum wells, we have also calculated band-edges for ternary alloys. Energy gaps, including confinement, may be easily and accurately estimated using band energies and a simple effective mass approximation, yielding excellent agreement with experimental results. By calculating all material combinations we have identified novel and interesting material combinations, such as artificial donors, that have not been experimentally realized. The calculations were perfomed using strain-dependent k-dot-p theory and provide a comprehensive overview of band structures for strained heterostructures.
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Submitted 5 January, 2005;
originally announced January 2005.
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Lande g factors and orbital momentum quenching in semiconductor quantum dots
Authors:
Craig E. Pryor,
Michael E. Flatté
Abstract:
We show that the electron and hole Lande g factors in self-assembled III-V quantum dots have a rich structure intermediate between that expected for paramagnetic atomic impurities and for bulk semiconductors. Strain, dot geometry, and confinement energy significantly modify the effective g factors of the semiconductor material from which the dot and barrier are constructed, yet these effects are…
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We show that the electron and hole Lande g factors in self-assembled III-V quantum dots have a rich structure intermediate between that expected for paramagnetic atomic impurities and for bulk semiconductors. Strain, dot geometry, and confinement energy significantly modify the effective g factors of the semiconductor material from which the dot and barrier are constructed, yet these effects are insufficient to explain our results. We find that the quantization of the quantum dot electronic states further quenches the orbital angular momentum of the dot states, pushing the electron g factor towards 2, even when all the semiconductor constituents of the dot have negative g factors. This leads to trends in the dot's electron g factors that are the opposite of those expected from the effective g factors of the dot and barrier material. Both electron and hole g factors are strongly dependent on the magnetic field orientation; hole g factors for InAs/GaAs quatum dots have large positive values along the growth direction and small negative values in-plane. The approximate shape of a quantum dot can be determined from measurements of this g factor asymmetry.
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Submitted 26 October, 2004;
originally announced October 2004.
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Accuracy of circular polarization as a measure of spin polarization in quantum dot qubits
Authors:
C. E. Pryor,
M. E. Flatté
Abstract:
A quantum dot spin LED provides a test of carrier spin injection into a qubit, as well as a means of analyzing carrier spin injection in general and local spin polarization. The polarization of the observed light is, however, significantly influenced by the dot geometry so the spin may be more polarized than the emitted light would naively suggest. We have calculated carrier polarization-depende…
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A quantum dot spin LED provides a test of carrier spin injection into a qubit, as well as a means of analyzing carrier spin injection in general and local spin polarization. The polarization of the observed light is, however, significantly influenced by the dot geometry so the spin may be more polarized than the emitted light would naively suggest. We have calculated carrier polarization-dependent optical matrix elements using 8-band strain-dependent k.p theory for InAs/GaAs self-assembled quantum dots (SAQDs) for electron and hole spin injection into a range of quantum dot sizes and shapes, and for arbitrary emission directions. The observed circular polarization does not depend on whether the injected spin-polarized carriers are electrons or holes, but is strongly influenced by the SAQD geometry and emission direction. Calculations for typical SAQD geometries with emission along [110] show light that is only ~5% circularly polarized for spin states that are 100% polarized along [110]. Therefore observed polarizations [Chye et al. PRB 66, 201301(R)] of ~1% imply a spin polarization within the dot of ~20%. We also find that measuring along the growth direction gives near unity conversion of spin to photon polarization, and is the least sensitive to uncertainties in SAQD geometry.
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Submitted 13 May, 2003;
originally announced May 2003.
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Predicted Ultrafast Single Qubit Operations in Semiconductor Quantum Dots
Authors:
C. E. Pryor,
M. E. Flatté
Abstract:
Several recently proposed implementations of scalable quantum computation rely on the ability to manipulate the spin polarization of individual electrons in semiconductors. The most rapid single-spin-manipulation technique to date relies on the generation of an effective magnetic field via a spin-sensitive optical Stark effect. This approach has been used to split spin states in colloidal CdSe q…
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Several recently proposed implementations of scalable quantum computation rely on the ability to manipulate the spin polarization of individual electrons in semiconductors. The most rapid single-spin-manipulation technique to date relies on the generation of an effective magnetic field via a spin-sensitive optical Stark effect. This approach has been used to split spin states in colloidal CdSe quantum dots and to manipulate ensembles of spins in ZnMnSe quantum wells with femtosecond optical pulses. Here we report that the process will produce a coherent rotation of spin in quantum dots containing a single electron. The calculated magnitude of the effective magnetic field depends on the dot bandgap and the strain. We predict that in InAs/InP dots, for reasonable experimental parameters, the magnitude of the rotation is sufficient and the intrinsic error is low enough for them to serve as elements of a quantum dot based quantum computer.
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Submitted 25 November, 2002;
originally announced November 2002.
