Showing 1–11 of 11 results for author: Protik, N H

Beyond the Tamura model of phonon-isotope scattering

Authors: Nakib H. Protik, Claudia Draxl

Abstract: The Tamura model is a particular type of 1$^{\text{st}}$ Born approximation of the phonon-isotope scattering problem. The expression for the mode-resolved phonon-isotope scattering rates in this model, derived in 1983, is still widely used in ab initio transport calculations. While the original work emphasized its applicability to low-energy acoustic phonons only, it has, nevertheless, been also a… ▽ More The Tamura model is a particular type of 1$^{\text{st}}$ Born approximation of the phonon-isotope scattering problem. The expression for the mode-resolved phonon-isotope scattering rates in this model, derived in 1983, is still widely used in ab initio transport calculations. While the original work emphasized its applicability to low-energy acoustic phonons only, it has, nevertheless, been also applied to optical phonons in the field of phonon transport. The model has the salient feature of being a perturbation theory on top of a virtual crystal background. As such, this approach does not correspond to the proper methodology for solving the phonon-substitution defect problem in the respective limit. Here, we explore three avenues to go beyond the Tamura model and carry out calculations on a set of common materials to compare the different approaches. This work allows a systematic improvement of the treatment of phonon-isotope scattering in ab initio phonon transport, while unifying it with the general phonon-substitution scattering problem. △ Less

Submitted 17 April, 2024; v1 submitted 9 January, 2024; originally announced January 2024.

Optical and thermal characterization of a group-III nitride semiconductor membrane by microphotoluminescence spectroscopy and Raman thermometry

Authors: Mahmoud Elhajhasan, Wilken Seemann, Katharina Dudde, Daniel Vaske, Gordon Callsen, Ian Rousseau, Thomas F. K. Weatherley, Jean-François Carlin, Raphaël Butté, Nicolas Grandjean, Nakib H. Protik, Giuseppe Romano

Abstract: We present the simultaneous optical and thermal analysis of a freestanding photonic semiconductor membrane made from wurtzite III-nitride material. By linking micro-photoluminescence ($μ$PL) spectroscopy with Raman thermometry, we demonstrate how a robust value for the thermal conductivity $κ$ can be obtained using only optical, non-invasive means. For this, we consider the balance of different co… ▽ More We present the simultaneous optical and thermal analysis of a freestanding photonic semiconductor membrane made from wurtzite III-nitride material. By linking micro-photoluminescence ($μ$PL) spectroscopy with Raman thermometry, we demonstrate how a robust value for the thermal conductivity $κ$ can be obtained using only optical, non-invasive means. For this, we consider the balance of different contributions to thermal transport given by, e.g., excitons, charge carriers, and heat carrying phonons. Further complication is given by the fact that this membrane is made from direct bandgap semiconductors, designed to emit light based on an In$_{x}$Ga$_{1-x}$N ($x=0.15$) quantum well embedded in GaN. To meet these challenges, we designed a novel experimental setup that enables the necessary optical and thermal characterizations in parallel. We perform micro-Raman thermometry, either based on a heating laser that acts as a probe laser (1-laser Raman thermometry), or based on two lasers, providing the heating and the temperature probe separately (2-laser Raman thermometry). For the latter technique, we obtain temperature maps over tens of micrometers with a spatial resolution less than $1\,μ\text{m}$, yielding $κ\,=\,95^{+11}_{-7}\,\frac{\text{W}}{\text{m}\cdot \text{K}}$ for the $\textit{c}$-plane of our $\approx\,250\text{-nm}$-thick membrane at around room temperature, which compares well to our $\textit{ab initio}$ calculations applied to a simplified structure. Based on these calculations, we explain the particular relevance of the temperature probe volume, as quasi-ballistic transport of heat-carrying phonons occurs on length scales beyond the penetration depths of the heating laser and even its focus spot radius. The present work represents a significant step towards non-invasive, highly spatially resolved, and still quantitative thermometry performed on a photonic membrane. △ Less

Submitted 8 March, 2024; v1 submitted 29 June, 2023; originally announced June 2023.

Comments: 28 pages, 14 figures, and Supplemental Material

Colossal phonon drag enhanced thermopower in lightly doped diamond

Authors: Chunhua Li, Nakib H Protik, Pablo Ordejón, David Broido

Abstract: Diamond is one of the most studied materials because of its unique combination of remarkable electrical, mechanical, thermal and optical properties. Using a fully self-consistent ab initio theory of coupled electron-phonon transport, we reveal another striking behavior: a huge drag enhancement of the thermopower of lightly doped diamond. Thermopower values of around 100,000 microvolts per Kelvin a… ▽ More Diamond is one of the most studied materials because of its unique combination of remarkable electrical, mechanical, thermal and optical properties. Using a fully self-consistent ab initio theory of coupled electron-phonon transport, we reveal another striking behavior: a huge drag enhancement of the thermopower of lightly doped diamond. Thermopower values of around 100,000 microvolts per Kelvin are found at 100 K, significantly exceeding the highest previously measured value in the correlated metal FeSb2, and occurring at much higher temperatures. The enormous thermopower in diamond arises primarily from exceptionally weak anharmonic phonon decay around and below 100 K that facilitates efficient momentum exchange between charge carriers and phonons through electron-phonon interactions. Exceedingly large thermoelectric power factors are also identified. This work gives insights into the physics of the coupled electron-phonon system in solids and advances our understanding of thermoelectric transport in the regime of strong drag. △ Less

Submitted 18 July, 2022; v1 submitted 24 May, 2022; originally announced May 2022.

Uncertainty-aware molecular dynamics from Bayesian active learning for Phase Transformations and Thermal Transport in SiC

Authors: Yu Xie, Jonathan Vandermause, Senja Ramakers, Nakib H. Protik, Anders Johansson, Boris Kozinsky

Abstract: Machine learning interatomic force fields are promising for combining high computational efficiency and accuracy in modeling quantum interactions and simulating atomistic dynamics. Active learning methods have been recently developed to train force fields efficiently and automatically. Among them, Bayesian active learning utilizes principled uncertainty quantification to make data acquisition deci… ▽ More Machine learning interatomic force fields are promising for combining high computational efficiency and accuracy in modeling quantum interactions and simulating atomistic dynamics. Active learning methods have been recently developed to train force fields efficiently and automatically. Among them, Bayesian active learning utilizes principled uncertainty quantification to make data acquisition decisions. In this work, we present a general Bayesian active learning workflow, where the force field is constructed from a sparse Gaussian process regression model based on atomic cluster expansion descriptors. To circumvent the high computational cost of the sparse Gaussian process uncertainty calculation, we formulate a high-performance approximate map** of the uncertainty and demonstrate a speedup of several orders of magnitude. We demonstrate the autonomous active learning workflow by training a Bayesian force field model for silicon carbide (SiC) polymorphs in only a few days of computer time and show that pressure-induced phase transformations are accurately captured. The resulting model exhibits close agreement with both \textit{ab initio} calculations and experimental measurements, and outperforms existing empirical models on vibrational and thermal properties. The active learning workflow readily generalizes to a wide range of material systems and accelerates their computational understanding. △ Less

Submitted 3 March, 2023; v1 submitted 7 March, 2022; originally announced March 2022.

Enhancing superconductivity with resonant anti-shielding and topological plasmon-polarons

Authors: Krzysztof Kempa, Nakib H. Protik, Tyler Dodge, Claudia Draxl, Michael J. Naughton

Abstract: By employing ab initio Migdal-Eliashberg calculations, we predict a 4-fold enhancement of the superconducting critical temperature of MgB$_{2}$ when proximity-coupled to the topological crystal Bi$_{2}$Se$_{3}$. We support this result with calculations using the general Leavens scaling method. We show that this effect is a result of dynamic resonant anti-shielding of Cooper pairs by plasmon polaro… ▽ More By employing ab initio Migdal-Eliashberg calculations, we predict a 4-fold enhancement of the superconducting critical temperature of MgB$_{2}$ when proximity-coupled to the topological crystal Bi$_{2}$Se$_{3}$. We support this result with calculations using the general Leavens scaling method. We show that this effect is a result of dynamic resonant anti-shielding of Cooper pairs by plasmon polarons of Dirac electrons in the topological crystal. Our calculations show that such superconductivity enhancement varies strongly with Coulomb coupling between plasmon polarons and Cooper pairs, with a pronounced maximum of $\textit{T}_{c}$ at a critical value of the coupling parameter. This feature is universal, and so can occur in other superconductor-topological crystal combinations, including with non-phonon mediated superconductors. We discuss methods to experimentally optimize the key coupling parameter. △ Less

Submitted 4 April, 2023; v1 submitted 21 September, 2021; originally announced September 2021.

The elphbolt ab initio solver for the coupled electron-phonon Boltzmann transport equations

Authors: Nakib H. Protik, Chunhua Li, Miguel Pruneda, David Broido, Pablo Ordejón

Abstract: elphbolt is a modern Fortran (2018 standard) code for efficiently solving the coupled electron-phonon Boltzmann transport equations from first principles. Using results from density functional and density functional perturbation theory as inputs, it can calculate the effect of the non-equilibrium phonons on the electronic transport (phonon drag) and non-equilibrium electrons on the phononic transp… ▽ More elphbolt is a modern Fortran (2018 standard) code for efficiently solving the coupled electron-phonon Boltzmann transport equations from first principles. Using results from density functional and density functional perturbation theory as inputs, it can calculate the effect of the non-equilibrium phonons on the electronic transport (phonon drag) and non-equilibrium electrons on the phononic transport (electron drag) in a fully self-consistent manner and obeying the constraints mandated by thermodynamics. It can calculate the lattice, charge, and thermoelectric transport coefficients for the temperature gradient and electric fields, and the effect of the mutual electron-phonon drag on these transport properties. The code fully exploits the symmetries of the crystal and the transport-active window to allow the sampling of extremely fine electron and phonon wave vector meshes required for accurately capturing the drag phenomena. The coarray feature of modern Fortran, which offers native and convenient support for parallelization, is utilized. The code is compact, readable, well-documented, and extensible by design. △ Less

Submitted 11 February, 2022; v1 submitted 17 September, 2021; originally announced September 2021.

Quasi-Ballistic Thermal Conduction in 6H-SiC

Authors: Zhe Cheng, Weifang Lu, **g**g Shi, Daiki Tanaka, Nakib H. Protik, Shangkun Wang, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano, Samuel Graham

Abstract: The minimization of electronics makes heat dissipation of related devices an increasing challenge. When the size of materials is smaller than the phonon mean free paths, phonons transport without internal scatterings and laws of diffusive thermal conduction fail, resulting in significant reduction in the effective thermal conductivity. This work reports, for the first time, the temperature depende… ▽ More The minimization of electronics makes heat dissipation of related devices an increasing challenge. When the size of materials is smaller than the phonon mean free paths, phonons transport without internal scatterings and laws of diffusive thermal conduction fail, resulting in significant reduction in the effective thermal conductivity. This work reports, for the first time, the temperature dependent thermal conductivity of doped epitaxial 6H-SiC and monocrystalline porous 6H-SiC below room temperature probed by time-domain thermoreflectance. Strong quasi-ballistic thermal transport was observed in these samples, especially at low temperatures. Do** and structural boundaries were applied to tune the quasi-ballistic thermal transport since dopants selectively scatter high-frequency phonons while boundaries scatter phonons with long mean free paths. Exceptionally strong phonon scattering by boron dopants are observed, compared to nitrogen dopants. Furthermore, orders of magnitude reduction in the measured thermal conductivity was observed at low temperatures for the porous 6H-SiC compared to the epitaxial 6H-SiC. Finally, first principles calculations and a simple Callaway model are built to understand the measured thermal conductivities. Our work sheds light on the fundamental understanding of thermal conduction in technologically-important wide bandgap semiconductors such as 6H-SiC and will impact applications such as thermal management of 6H-SiC-related electronics and devices. △ Less

Submitted 15 February, 2021; originally announced February 2021.

Journal ref: Materials Today Physics, 20, 100462, 2021

How do defects limit the ultrahigh thermal conductivity of BAs? A first principles study

Authors: Mauro Fava, Nakib Haider Protik, Chunhua Li, Navaneetha Krishnan Ravichandran, Jesús Carrete, Ambroise van Roekeghem, Georg K. H. Madsen, Natalio Mingo, David Broido

Abstract: The promise enabled by BAs high thermal conductivity in power electronics cannot be assessed without taking into account the reduction incurred when do** the material. Using first principles calculations, we determine the thermal conductivity reduction induced by different group IV impurities in BAs as a function of concentration and charge state. We unveil a general trend, where neutral impurit… ▽ More The promise enabled by BAs high thermal conductivity in power electronics cannot be assessed without taking into account the reduction incurred when do** the material. Using first principles calculations, we determine the thermal conductivity reduction induced by different group IV impurities in BAs as a function of concentration and charge state. We unveil a general trend, where neutral impurities scatter phonons more strongly than the charged ones. $\text{C}_{\text{B}}$ and $\text{Ge}_{\text{As}}$ impurities show by far the weakest phonon scattering and retain BAs $κ$ values of over $\sim$ 1000 $\text{W}\cdot\text{K}^{-1}\cdot\text{m}^{-1}$ even up to high densities making them ideal n-type and p-type dopants. Furthermore, going beyond the do** compensation threshold associated to Fermi level pinning triggers observable changes in the thermal conductivity. This informs design considerations on the do** of BAs, and it also suggests a direct way to determine the onset of compensation do** in experimental samples. △ Less

Submitted 28 October, 2020; originally announced October 2020.

Electron-phonon drag enhancement of transport properties from fully coupled \textit{ab initio} Boltzmann formalism

Authors: Nakib H. Protik, Boris Kozinsky

Abstract: We present a combined treatment of the non-equilibrium dynamics and transport of electrons and phonons by carrying out \textit{ab initio} calculations of the fully coupled electron and phonon Boltzmann transport equations. We find that the presence of mutual drag between the two carriers causes the thermopower to be enhanced and dominated by the transport of phonons, rather than electrons as in th… ▽ More We present a combined treatment of the non-equilibrium dynamics and transport of electrons and phonons by carrying out \textit{ab initio} calculations of the fully coupled electron and phonon Boltzmann transport equations. We find that the presence of mutual drag between the two carriers causes the thermopower to be enhanced and dominated by the transport of phonons, rather than electrons as in the traditional semiconductor picture. Drag also strongly boosts the intrinsic electron mobility, thermal conductivity and the Lorenz number. Impurity scattering is seen to suppress the drag-enhancement of the thermal and electrical conductivities, while having weak effects on the enhancement of the Lorenz number and thermopower. We demonstrate these effects in \textit{n}-doped 3C-SiC at room temperature, and explain their origins. This work establishes the roles of microscopic scattering mechanisms in the emergence of strong drag effects in the transport of the interacting electron-phonon gas. △ Less

Submitted 1 December, 2020; v1 submitted 19 August, 2020; originally announced August 2020.

Coupled transport of phonons and carriers in semiconductors: A case study of n-doped GaAs

Authors: Nakib H. Protik, David A. Broido

Abstract: We present a general coupled electron-phonon Boltzmann transport equations (BTEs) scheme designed to capture the mutual drag of the two interacting systems. By combining density functional theory based first principles calculations of anharmonic phonon-phonon interactions with physical models of electron-phonon interactions, we apply our implementation of the coupled BTEs to calculate the thermal… ▽ More We present a general coupled electron-phonon Boltzmann transport equations (BTEs) scheme designed to capture the mutual drag of the two interacting systems. By combining density functional theory based first principles calculations of anharmonic phonon-phonon interactions with physical models of electron-phonon interactions, we apply our implementation of the coupled BTEs to calculate the thermal conductivity, mobility, Seebeck and Peltier coefficients of n-doped gallium arsenide. The measured low temperature enhancement in the Seebeck coefficient is captured using the solution of the fully coupled electron-phonon BTEs, while the uncoupled electron BTE fails to do so. This work gives insights into the fundamental nature of charge and heat transport in semiconductors and advances predictive ab initio computational approaches. We discuss possible extensions of our work. △ Less

Submitted 17 February, 2020; v1 submitted 7 November, 2019; originally announced November 2019.

Journal ref: Physical Review B 101.7 (2020): 075202

Phonon thermal transport in 2H, 4H and 6H silicon carbide from first principles

Authors: Nakib Haider Protik, Ankita Katre, Lucas Lindsay, Jesús Carrete, Natalio Mingo, David Broido

Abstract: Silicon carbide (SiC) is a wide band gap semiconductor with a variety of industrial applications. Among its many useful properties is its high thermal conductivity, which makes it advantageous for thermal management applications. In this paper we present \textit{ab initio} calculations of the in-plane and cross-plane thermal conductivities, $κ_{\text{in}}$ and $κ_{\text{out}}$, of three common hex… ▽ More Silicon carbide (SiC) is a wide band gap semiconductor with a variety of industrial applications. Among its many useful properties is its high thermal conductivity, which makes it advantageous for thermal management applications. In this paper we present \textit{ab initio} calculations of the in-plane and cross-plane thermal conductivities, $κ_{\text{in}}$ and $κ_{\text{out}}$, of three common hexagonal polytypes of SiC: 2H, 4H and 6H. The phonon Boltzmann transport equation is solved iteratively using as input interatomic force constants determined from density functional theory. Both $κ_{\text{in}}$ and $κ_{\text{out}}$ decrease with increasing $n$ in $n$H SiC because of additional low-lying optic phonon branches. These optic branches are characterized by low phonon group velocities, and they increase the phase space for phonon-phonon scattering of acoustic modes. Also, for all $n$, $κ_{\text{in}}$ is found to be larger than $κ_{\text{out}}$ in the temperature range considered. At electron concentrations present in experimental samples, scattering of phonons by electrons is shown to be negligible except well below room temperature where it can lead to a significant reduction of the lattice thermal conductivity. This work highlights the power of \textit{ab initio} approaches in giving quantitative, predictive descriptions of thermal transport in materials. It helps explain the qualitative disagreement that exists among different sets of measured thermal conductivity data and provides information of the relative quality of samples from which measured data was obtained. △ Less

Submitted 23 May, 2017; v1 submitted 7 May, 2017; originally announced May 2017.