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Measurement of Spin-Polarized Photoemission from Wurtzite and Zinc-Blende Gallium Nitride Photocathodes
Authors:
S. J. Levenson,
M. B. Andorf,
B. D. Dickensheets,
I. V. Bazarov,
A. Galdi,
J. Encomendero,
V. V. Protasenko,
D. Jena,
H. G. Xing,
J. M. Maxson
Abstract:
Spin-polarized photoemission from wurtzite and zinc-blende gallium nitride (GaN) photocathodes has been observed and measured for the first time. The p-doped GaN photocathodes were epitaxially grown and activated to negative electron affinity (NEA) with a cesium monolayer deposited on their surfaces. A field-retarding Mott polarimeter was used to measure the spin-polarization of electrons photoemi…
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Spin-polarized photoemission from wurtzite and zinc-blende gallium nitride (GaN) photocathodes has been observed and measured for the first time. The p-doped GaN photocathodes were epitaxially grown and activated to negative electron affinity (NEA) with a cesium monolayer deposited on their surfaces. A field-retarding Mott polarimeter was used to measure the spin-polarization of electrons photoemitted from the top of the valence band. A spectral scan with a tunable optical parametric amplifier (OPA) constructed to provide low-bandwidth light revealed peak spin polarizations of 17% and 29% in the wurtzite and zinc-blende photocathodes, respectively. Zinc-blende GaN results are analyzed with a spin-polarization model accounting for experimental parameters used in the measurements, while possible mechanisms influencing the obtained spin polarization values of wurtzite GaN are discussed.
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Submitted 7 May, 2024;
originally announced May 2024.
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Ultrawide bandgap semiconductor heterojunction p-n diodes with distributed polarization doped p-type AlGaN layers on bulk AlN substrates
Authors:
Shivali Agrawal,
Len van Deurzen,
Jimy Encomendero,
Joseph E. Dill,
Hsin Wei,
Huang,
Vladimir Protasenko,
Huili,
Xing,
Debdeep Jena
Abstract:
Ultrawide bandgap heterojunction p-n diodes with polarization-induced AlGaN p-type layers are demonstrated using plasma-assisted molecular beam epitaxy on bulk AlN substrates. Current-voltage characteristics show a turn on voltage of $V_{\text{bi}}\approx5.5$ V, a minimum room temperature ideality factor of $η\approx 1.63$, and more than 12 orders of current modulation at room temperature. Stable…
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Ultrawide bandgap heterojunction p-n diodes with polarization-induced AlGaN p-type layers are demonstrated using plasma-assisted molecular beam epitaxy on bulk AlN substrates. Current-voltage characteristics show a turn on voltage of $V_{\text{bi}}\approx5.5$ V, a minimum room temperature ideality factor of $η\approx 1.63$, and more than 12 orders of current modulation at room temperature. Stable current operation of the ultrawide bandgap semiconductor diode is measured up to a temperature of 300$^\circ$C. The one-sided n$^{+}$-p heterojunction diode design enables a direct measurement of the spatial distribution of polarization-induced mobile hole density in the graded AlGaN layer from the capacitance-voltage profile. The measured average mobile hole density is $p \sim 5.7 \times 10^{17}$ cm$^{-3}$, in close agreement with what is theoretically expected from distributed polarization do**. Light emission peaked at 260 nm (4.78 eV) observed in electroluminescence corresponds to interband radiative recombination in the n$^{+}$ AlGaN layer. A much weaker deep-level emission band observed at 3.4 eV is attributed to cation-vacancy and silicon complexes in the heavily Si-doped AlGaN layer. These results demonstrate that distributed polarization do** enables ultrawide bandgap semiconductor heterojunction p-n diodes that have wide applications ranging from power electronics to deep-ultraviolet photonics. These devices can operate at high temperatures and in harsh environments.
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Submitted 13 December, 2023;
originally announced December 2023.
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Accumulation and removal of Si impurities on $β-Ga_2O_3$ arising from ambient air exposure
Authors:
J. P. McCandless,
C. A. Gorsak,
V. Protasenko,
D. G. Schlom,
Michael O. Thompson,
H. G. Xing,
D. Jena,
H. P. Nair
Abstract:
Here we report that the source of Si impurities commonly observed on (010) $β-Ga_2O_3$ is from exposure of the surface to air. Moreover, we find that a 15 minute HF (49%) treatment reduces the Si density by approximately 1 order of magnitude on (010) $β-Ga_2O_3$ surfaces. This reduction in Si is critical for the elimination of the often observed parasitic conducting channel, which negatively affec…
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Here we report that the source of Si impurities commonly observed on (010) $β-Ga_2O_3$ is from exposure of the surface to air. Moreover, we find that a 15 minute HF (49%) treatment reduces the Si density by approximately 1 order of magnitude on (010) $β-Ga_2O_3$ surfaces. This reduction in Si is critical for the elimination of the often observed parasitic conducting channel, which negatively affects transport properties and lateral transistor performance. After the HF treatment the sample must be immediately put under vacuum, for the Si fully returns within 10 minutes of additional air exposure. Lastly, we demonstrate that performing a 30 minute HF (49%) treatment on the substrate before growth has no deleterious effect on the structure or on the epitaxy surface after subsequent $Ga_2O_3$ growth.
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Submitted 11 December, 2023;
originally announced December 2023.
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Defeating Broken Symmetry with Do**: Symmetric Resonant Tunneling in Noncentrosymetric Heterostructures
Authors:
Jimy Encomendero,
Vladimir Protasenko,
Debdeep Jena,
Huili Grace Xing
Abstract:
Resonant tunneling transport in polar heterostructures is intimately connected to the polarization fields emerging from the geometric Berry-phase. In these structures, quantum confinement results not only in a discrete electronic spectrum, but also in built-in polarization charges exhibiting a broken inversion symmetry along the transport direction. Thus, electrons undergo highly asymmetric quantu…
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Resonant tunneling transport in polar heterostructures is intimately connected to the polarization fields emerging from the geometric Berry-phase. In these structures, quantum confinement results not only in a discrete electronic spectrum, but also in built-in polarization charges exhibiting a broken inversion symmetry along the transport direction. Thus, electrons undergo highly asymmetric quantum interference effects with respect to the direction of current flow. By employing do** to counter the broken symmetry, we deterministically control the resonant transmission through GaN/AlN resonant tunneling diodes and experimentally demonstrate the recovery of symmetric resonant tunneling injection across the noncentrosymmetric double-barrier potential.
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Submitted 15 March, 2023;
originally announced March 2023.
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Fighting Broken Symmetry with Do**: Toward Polar Resonant Tunneling Diodes with Symmetric Characteristics
Authors:
Jimy Encomendero,
Vladimir Protasenko,
Farhan Rana,
Debdeep Jena,
Huili Grace Xing
Abstract:
The recent demonstration of resonant tunneling transport in nitride semiconductors has led to an invigorated effort to harness this quantum transport regime for practical applications. In polar semiconductors, however, the interplay between fixed polarization charges and mobile free carriers leads to asymmetric transport characteristics. Here, we investigate the possibility of using degenerately d…
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The recent demonstration of resonant tunneling transport in nitride semiconductors has led to an invigorated effort to harness this quantum transport regime for practical applications. In polar semiconductors, however, the interplay between fixed polarization charges and mobile free carriers leads to asymmetric transport characteristics. Here, we investigate the possibility of using degenerately doped contact layers to screen the built-in polarization fields and recover symmetric resonant injection. Thanks to a high do** density, negative differential conductance is observed under both bias polarities of GaN/AlN resonant tunneling diodes (RTDs). Moreover, our analytical model reveals a lower bound for the minimum resonant-tunneling voltage achieved via uniform do**, owing to the dopant solubility limit. Charge storage dynamics is also studied by impedance measurements, showing that at close-to-equilibrium conditions, polar RTDs behave effectively as parallel-plate capacitors. These mechanisms are completely reproduced by our analytical model, providing a theoretical framework useful in the design and analysis of polar resonant-tunneling devices.
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Submitted 15 March, 2023;
originally announced March 2023.
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Broken Symmetry Effects due to Polarization on Resonant Tunneling Transport in Double-Barrier Nitride Heterostructures
Authors:
Jimy Encomendero,
Vladimir Protasenko,
Berardi Sensale-Rodriguez,
Patrick Fay,
Farhan Rana,
Debdeep Jena,
Huili Grace Xing
Abstract:
The phenomenon of resonant tunneling transport through polar double-barrier heterostructures is systematically investigated using a combined experimental and theoretical approach. On the experimental side, GaN/AlN RTDs are grown by MBE. In-situ electron diffraction is employed to monitor the number of monolayers incorporated into each tunneling barrier. Using this precise epitaxial control at the…
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The phenomenon of resonant tunneling transport through polar double-barrier heterostructures is systematically investigated using a combined experimental and theoretical approach. On the experimental side, GaN/AlN RTDs are grown by MBE. In-situ electron diffraction is employed to monitor the number of monolayers incorporated into each tunneling barrier. Using this precise epitaxial control at the monolayer level, we demonstrate exponential modulation of the resonant tunneling current as a function of barrier thickness. Both the peak voltage and characteristic threshold bias exhibit a dependence on barrier thickness as a result of the intense electric fields present in the polar heterostructures. To get further insight into the asymmetric tunneling injection, we present an analytical theory for tunneling transport across polar heterostructures. A general expression for the resonant tunneling current with contributions from coherent and sequential tunneling processes is introduced. After applying this theory to the case of GaN/AlN RTDs, their experimental current-voltage characteristics are reproduced over both bias polarities, with tunneling currents spanning several orders of magnitude. This agreement allows us to elucidate the role played by the internal polarization fields on the magnitude of the tunneling current and broadening of the resonant line shape. Under reverse bias, we identify new tunneling features originating from highly attenuated resonant tunneling phenomena, which are completely captured by our model. Our analytical model, provides a simple expression which reveals the connection between the polar RTD design parameters and its current-voltage characteristics. This new theory paves the way for the design of polar resonant tunneling devices exhibiting efficient resonant current injection and enhanced tunneling dynamics, as required in various practical applications.
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Submitted 15 March, 2023;
originally announced March 2023.
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Growth of $α-Ga_2O_3$ on $Al_2O_3$ by conventional molecular-beam epitaxy and metal-oxide-catalyzed epitaxy
Authors:
J. P. McCandless,
D. Rowe,
N. Pieczulewski,
V. Protasenko,
M. Alonso-Orts,
M. S. Williams,
M. Eickhoff,
H. G. Xing,
D. A. Muller,
D. Jena,
P. Vogt
Abstract:
We report the growth of $α-Ga_2O_3$ on $m$-plane $Al_2O_3$ by conventional plasma-assisted molecular-beam epitaxy (MBE) and In-mediated metal-oxide-catalyzed epitaxy (MOCATAXY). We report a growth-rate-diagram for $α-Ga_2O_3$ (10-10), and observe (i) a growth rate increase, (ii) an expanded growth window, and (iii) reduced out-of-lane mosaic spread when MOCATAXY is employed for the growth of…
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We report the growth of $α-Ga_2O_3$ on $m$-plane $Al_2O_3$ by conventional plasma-assisted molecular-beam epitaxy (MBE) and In-mediated metal-oxide-catalyzed epitaxy (MOCATAXY). We report a growth-rate-diagram for $α-Ga_2O_3$ (10-10), and observe (i) a growth rate increase, (ii) an expanded growth window, and (iii) reduced out-of-lane mosaic spread when MOCATAXY is employed for the growth of $α-Ga_2O_3$. Through the use of In-mediated catalysis, growth rates over $0.2\,μ\text{m}\,\text{hr}^{-1}$ and rocking curves with full width at half maxima of $Δω\approx 0.45^{\circ}$ are achieved. Faceting is observed along the $α-Ga_2O_3$ film surface and is explored through scanning transmission electron microscopy.
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Submitted 30 January, 2023;
originally announced January 2023.
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Molecular beam homoepitaxy of N-polar AlN: enabling role of Al-assisted surface cleaning
Authors:
Zexuan Zhang,
Yusuke Hayashi,
Tetsuya Tohei,
Akira Sakai,
Vladimir Protasenko,
Jashan Singhal,
Hideto Miyake,
Huili Grace Xing,
Debdeep Jena,
Yong** Cho
Abstract:
N-polar aluminum nitride (AlN) is an important building block for next-generation high-power RF electronics. We report successful homoepitaxial growth of N-polar AlN by molecular beam epitaxy (MBE) on large-area cost-effective N-polar AlN templates. Direct growth without any in-situ surface cleaning leads to films with inverted Al-polarity. It is found that Al-assisted cleaning before growth enabl…
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N-polar aluminum nitride (AlN) is an important building block for next-generation high-power RF electronics. We report successful homoepitaxial growth of N-polar AlN by molecular beam epitaxy (MBE) on large-area cost-effective N-polar AlN templates. Direct growth without any in-situ surface cleaning leads to films with inverted Al-polarity. It is found that Al-assisted cleaning before growth enables the epitaxial film to maintain N-polarity. The grown N-polar AlN epilayer with its smooth, pit-free surface duplicates the structural quality of the substrate as evidenced by a clean and smooth growth interface with no noticeable extended defects generation. Near band-edge photoluminescence peaks are observed at room temperature on samples with MBE-grown layers but not on the bare AlN substrates, implying the suppression of non-radiative recombination centers in the epitaxial N-polar AlN. These results are pivotal steps towards future high-power RF electronics and deep ultraviolet photonics based on the N-polar AlN platform.
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Submitted 18 April, 2022;
originally announced April 2022.
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Optically Pumped AlGaN Double Heterostructure Deep-UV Laser by Molecular Beam Homoepitaxy: Mirror Imperfections and Cavity Loss
Authors:
Len van Deurzen,
Ryan Page,
Vladimir Protasenko,
Huili,
Xing,
Debdeep Jena
Abstract:
We demonstrate the first optically pumped sub-300 nm UV laser structures grown by plasma-assisted molecular beam epitaxy on single-crystal bulk AlN. The edge-emitting laser structures fabricated with the AlN/AlGaN heterostructures exhibit multi-mode emission with peak gain at ~284 nm. Having the goal of electrically injected, continuous wave deep-UV AlGaN laser diodes in mind, with its intrinsic m…
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We demonstrate the first optically pumped sub-300 nm UV laser structures grown by plasma-assisted molecular beam epitaxy on single-crystal bulk AlN. The edge-emitting laser structures fabricated with the AlN/AlGaN heterostructures exhibit multi-mode emission with peak gain at ~284 nm. Having the goal of electrically injected, continuous wave deep-UV AlGaN laser diodes in mind, with its intrinsic material challenges of achieving sufficient optical gain, the optical cavity loss of a laser diode should be minimized. We derive an expression to quantify the effect of mirror imperfections, including slant and surface roughness on the optical mirror loss of a Fabry-Pérot cavity. It is found that the optical imperfection loss is a superlinear function of the RMS roughness and slant angle of the facets, and also scales as the inverse wavelength squared of the principal lasing mode. This highlights the importance of device processing optimization as Fabry-Pérot cavities couple to lower wavelengths.
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Submitted 22 September, 2021;
originally announced September 2021.
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Dislocation and Indium Droplet Related Emission Inhomogeneities in InGaN LEDs
Authors:
Len van Deurzen,
Mikel Gómez Ruiz,
Kevin Lee,
Henryk Turski,
Shyam Bharadwaj,
Ryan Page,
Vladimir Protasenko,
Huili,
Xing,
Jonas Lähnemann,
Debdeep Jena
Abstract:
This report classifies emission inhomogeneities that manifest in InGaN quantum well blue light-emitting diodes grown by plasma-assisted molecular beam epitaxy on free-standing GaN substrates. By a combination of spatially resolved electroluminescence and cathodoluminescence measurements, atomic force microscopy, scanning electron microscopy and hot wet KOH etching, the identified inhomogeneities a…
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This report classifies emission inhomogeneities that manifest in InGaN quantum well blue light-emitting diodes grown by plasma-assisted molecular beam epitaxy on free-standing GaN substrates. By a combination of spatially resolved electroluminescence and cathodoluminescence measurements, atomic force microscopy, scanning electron microscopy and hot wet KOH etching, the identified inhomogeneities are found to fall in four categories. Labeled here as type I through IV, they are distinguishable by their size, density, energy, intensity, radiative and electronic characteristics and chemical etch pits which correlates them with dislocations. Type I exhibits a blueshift of about 120 meV for the InGaN quantum well emission attributed to a perturbation of the active region, which is related to indium droplets that form on the surface in the metal-rich InGaN growth condition. Specifically, we attribute the blueshift to a decreased growth rate of and indium incorporation in the InGaN quantum wells underneath the droplet which is postulated to be the result of reduced incorporated N species due to increased N$_{2}$ formation. The location of droplets are correlated with mixed type dislocations for type I defects. Types II through IV are due to screw dislocations, edge dislocations, and dislocation bunching, respectively, and form dark spots due to leakage current and nonradiative recombination.
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Submitted 20 June, 2021;
originally announced June 2021.
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$γ$-phase Inclusions as Common Defects in Alloyed $β$-(Al$_x$Ga$_{1\text{-}x}$)$_2$O$_3$ and Doped $β$-Ga$_2$O$_3$ Films
Authors:
Celesta S. Chang,
Nicholas Tanen,
Vladimir Protasenko,
Thaddeus J. Asel,
Shin Mou,
Huili Grace Xing,
Debdeep Jena,
David A. Muller
Abstract:
$β$-Ga$_2$O$_3$ is a promising ultra-wide bandgap semiconductor whose properties can be further enhanced by alloying with Al. Here, using atomic-resolution scanning transmission electron microscopy (STEM), we find the thermodynamically-unstable $γ$-phase is a ubiquitous defect in both $β$-(Al$_x$Ga$_{1\text{-}x}$)$_2$O$_3$ films and doped $β$-Ga$_2$O$_3…
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$β$-Ga$_2$O$_3$ is a promising ultra-wide bandgap semiconductor whose properties can be further enhanced by alloying with Al. Here, using atomic-resolution scanning transmission electron microscopy (STEM), we find the thermodynamically-unstable $γ$-phase is a ubiquitous defect in both $β$-(Al$_x$Ga$_{1\text{-}x}$)$_2$O$_3$ films and doped $β$-Ga$_2$O$_3$ films grown by molecular beam epitaxy. For undoped $β$-(Al$_x$Ga$_{1\text{-}x}$)$_2$O$_3$ films we observe $γ$-phase inclusions between nucleating islands of the $β$-phase at lower growth temperatures (~400-600 $^{\circ}$C). In doped $β$-Ga$_2$O$_3$, a thin layer of the $γ$-phase is observed on the surfaces of films grown with a wide range of n-type dopants and dopant concentrations. The thickness of the $γ$-phase layer was most strongly correlated with the growth temperature, peaking at about 600 $^{\circ}$C. Ga interstitials are observed in $β$-phase, especially near the interface with the $γ$-phase. By imaging the same region of the surface of a Sn-doped $β$-(Al$_x$Ga$_{1\text{-}x}$)$_2$O$_3$ after ex-situ heating up to 400 $^{\circ}$C, a $γ$-phase region is observed to grow above the initial surface, accompanied by a decrease in Ga interstitials in the $β$-phase. This suggests that the diffusion of Ga interstitials towards the surface is likely the mechanism for growth of the surface $γ$-phase, and more generally that the more-open $γ$-phase may offer diffusion pathways to be a kinetically-favored and early-forming phase in the growth of Ga$_2$O$_3$.
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Submitted 30 November, 2020;
originally announced December 2020.
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Crystal orientation dictated epitaxy of ultrawide bandgap 5.4-8.6 eV $α$-(AlGa)$_2$O$_3$ on m-plane sapphire
Authors:
Riena **no,
Celesta S. Chang,
Takeyoshi Onuma,
Yong** Cho,
Shao-Ting Ho,
Michael C. Cao,
Kevin Lee,
Vladimir Protasenko,
Darrell G. Schlom,
David A. Muller,
Huili G. Xing,
Debdeep Jena
Abstract:
Ultra-wide bandgap semiconductors are ushering in the next generation of high power electronics. The correct crystal orientation can make or break successful epitaxy of such semiconductors. Here it is discovered that single-crystalline layers of $α$-(AlGa)$_2$O$_3$ alloys spanning bandgaps of 5.4 - 8.6 eV can be grown by molecular beam epitaxy. The key step is found to be the use of m-plane sapphi…
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Ultra-wide bandgap semiconductors are ushering in the next generation of high power electronics. The correct crystal orientation can make or break successful epitaxy of such semiconductors. Here it is discovered that single-crystalline layers of $α$-(AlGa)$_2$O$_3$ alloys spanning bandgaps of 5.4 - 8.6 eV can be grown by molecular beam epitaxy. The key step is found to be the use of m-plane sapphire crystal. The phase transition of the epitaxial layers from the $α$- to the narrower bandgap $β$-phase is catalyzed by the c-plane of the crystal. Because the c-plane is orthogonal to the growth front of the m-plane surface of the crystal, the narrower bandgap pathways are eliminated, revealing a route to much wider bandgap materials with structural purity. The resulting energy bandgaps of the epitaxial layers span a range beyond the reach of all other semiconductor families, heralding the successful epitaxial stabilization of the largest bandgap materials family to date.
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Submitted 16 July, 2020; v1 submitted 7 July, 2020;
originally announced July 2020.
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High efficiency deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures
Authors:
SM Islam,
Vladimir Protasenko,
Kevin Lee,
Sergei Rouvimov,
Jai Verma,
Huili,
Xing,
Debdeep Jena
Abstract:
Deep ultraviolet (UV) optical emission below 250 nm (~5 eV) in semiconductors is traditionally obtained from high aluminum containing AlGaN alloy quantum wells. It is shown here that high-quality epitaxial ultrathin binary GaN quantum disks embedded in an AlN matrix can produce efficient optical emission in the 219-235 nm (~5.7 to 5.3 eV) spectral range, far above the bulk bandgap (3.4 eV) of GaN.…
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Deep ultraviolet (UV) optical emission below 250 nm (~5 eV) in semiconductors is traditionally obtained from high aluminum containing AlGaN alloy quantum wells. It is shown here that high-quality epitaxial ultrathin binary GaN quantum disks embedded in an AlN matrix can produce efficient optical emission in the 219-235 nm (~5.7 to 5.3 eV) spectral range, far above the bulk bandgap (3.4 eV) of GaN. The quantum confinement energy in these heterostructures is larger than the bandgaps of traditional semiconductors, made possible by the large band offsets. These MBE-grown extreme quantum-confinement GaN/AlN heterostructures exhibit internal quantum efficiency as high as 40% at wavelengths as short as 219 nm. These observations, together with the ability to engineer the interband optical matrix elements to control the direction of photon emission in such new binary quantum disk active regions offers unique advantages over alloy AlGaN quantum well counterparts for the realization of deep-UV light-emitting diodes and lasers.
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Submitted 27 April, 2017;
originally announced April 2017.
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MBE-grown 232-270 nm Deep-UV LEDs using Monolayer thin Binary GaN/AlN quantum heterostructures
Authors:
SM Islam,
Kevin Lee,
Jai Verma,
Vladimir Protasenko,
Sergei Rouvimov,
Shyam Bharadwaj,
Huili Xing,
Debdeep Jena
Abstract:
Electrically injected deep ultra-violet (UV) emission is obtained using monolayer (ML) thin GaN/AlN quantum structures as active regions. The emission wavelength is tuned by controlling the thickness of ultrathin GaN layers with monolayer precision using plasma assisted molecular beam epitaxy (PAMBE). Single peaked emission spectra is achieved with narrow full width at half maximum (FWHM) for thre…
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Electrically injected deep ultra-violet (UV) emission is obtained using monolayer (ML) thin GaN/AlN quantum structures as active regions. The emission wavelength is tuned by controlling the thickness of ultrathin GaN layers with monolayer precision using plasma assisted molecular beam epitaxy (PAMBE). Single peaked emission spectra is achieved with narrow full width at half maximum (FWHM) for three different light emitting diodes (LEDs) operating at 232 nm, 246 nm and 270 nm. 232 nm (5.34 eV) is the shortest EL emission wavelength reported so far using GaN as the light emitting material and employing polarization-induced do**.
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Submitted 27 January, 2017; v1 submitted 16 October, 2016;
originally announced October 2016.
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Repeatable Room Temperature Negative Differential Conductance in GaN/AlN Resonant Tunneling Diodes
Authors:
Jimy Encomendero,
Faiza Afroz Faria,
S. M. Islam,
Vladimir Protasenko,
Sergei Rouvimov,
Patrick Fay,
Debdeep Jena,
Huili Grace Xing
Abstract:
Double barrier GaN/AlN resonant tunneling heterostructures have been grown by molecular beam epitaxy on the (0001) plane of commercially available bulk GaN substrates. Resonant tunneling diodes were fabricated; room temperature current-voltage measurements reveal the presence of a negative differential conductance region under forward bias with peak current densities of ~6.4 $kA/cm^2$ and a peak t…
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Double barrier GaN/AlN resonant tunneling heterostructures have been grown by molecular beam epitaxy on the (0001) plane of commercially available bulk GaN substrates. Resonant tunneling diodes were fabricated; room temperature current-voltage measurements reveal the presence of a negative differential conductance region under forward bias with peak current densities of ~6.4 $kA/cm^2$ and a peak to valley current ratio of ~1.3. Reverse bias operation presents a characteristic turn-on threshold voltage intimately linked to the polarization fields present in the heterostructure. An analytic electrostatic model is developed to capture the unique features of polar-heterostructure-based resonant tunneling diodes; both the resonant and threshold voltages are derived as a function of the design parameters and polarization fields. Subsequent measurements confirm the repeatability of the negative conductance and demonstrate that III-nitride tunneling heterostructures are capable of robust resonant transport at room temperature.
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Submitted 26 June, 2016;
originally announced June 2016.
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Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth
Authors:
Priti Gupta,
A. A. Rahman,
Shruti Subramanian,
Shalini Gupta,
Arumugam Thamizhavel,
Tatyana Orlova,
Sergei Rouvimov,
Suresh Vishwanath,
Vladimir Protasenko,
Masihhur R. Laskar,
Huili Grace Xing,
Debdeep Jena,
Arnab Bhattacharya
Abstract:
Most III-nitride semiconductors are grown on non-lattice-matched substrates like sapphire or silicon due to the extreme difficulty of obtaining a native GaN substrate. We show that several layered transition-metal dichalcogenides are closely lattice matched to GaN and report the growth of GaN on a range of such layered materials. We report detailed studies of the growth of GaN on mechanically-exfo…
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Most III-nitride semiconductors are grown on non-lattice-matched substrates like sapphire or silicon due to the extreme difficulty of obtaining a native GaN substrate. We show that several layered transition-metal dichalcogenides are closely lattice matched to GaN and report the growth of GaN on a range of such layered materials. We report detailed studies of the growth of GaN on mechanically-exfoliated flakes WS$_2$ and MoS$_2$ by metalorganic vapour phase epitaxy. Structural and optical characterization show that strain-free, single-crystal islands of GaN are obtained on the underlying chalcogenide flakes. We obtain strong near-band-edge emission from these layers, and analyse their temperature-dependent photoluminescence properties. We also report a proof-of-concept demonstration of large-area epitaxial growth of GaN on CVD MoS$_2$. Our results show that the transition-metal dichalcogenides can serve as novel near-lattice-matched substrates for nitride growth.
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Submitted 28 September, 2015;
originally announced September 2015.
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Esaki diodes in van der Waals heterojunctions with broken-gap energy band alignment
Authors:
Rusen Yan,
Sara Fathipour,
Yimo Han,
Bo Song,
Shudong Xiao,
Mingda Li,
Nan Ma,
Vladimir Protasenko,
David A. Muller,
Debdeep Jena,
Huili Grace Xing
Abstract:
Van der Waals (vdW) heterojunctions composed of 2-dimensional (2D) layered materials are emerging as a solid-state materials family that exhibit novel physics phenomena that can power high performance electronic and photonic applications. Here, we present the first demonstration of an important building block in vdW solids: room temperature (RT) Esaki tunnel diodes. The Esaki diodes were realized…
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Van der Waals (vdW) heterojunctions composed of 2-dimensional (2D) layered materials are emerging as a solid-state materials family that exhibit novel physics phenomena that can power high performance electronic and photonic applications. Here, we present the first demonstration of an important building block in vdW solids: room temperature (RT) Esaki tunnel diodes. The Esaki diodes were realized in vdW heterostructures made of black phosphorus (BP) and tin diselenide (SnSe2), two layered semiconductors that possess a broken-gap energy band offset. The presence of a thin insulating barrier between BP and SnSe2 enabled the observation of a prominent negative differential resistance (NDR) region in the forward-bias current-voltage characteristics, with a peak to valley ratio of 1.8 at 300 K and 2.8 at 80 K. A weak temperature dependence of the NDR indicates electron tunneling being the dominant transport mechanism, and a theoretical model shows excellent agreement with the experimental results. Furthermore, the broken-gap band alignment is confirmed by the junction photoresponse and the phosphorus double planes in a single layer of BP are resolved in transmission electron microscopy (TEM) for the first time. Our results represent a significant advance in the fundamental understanding of vdW heterojunctions, and widen the potential applications base of 2D layered materials.
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Submitted 25 April, 2015; v1 submitted 10 April, 2015;
originally announced April 2015.
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Dual Optical Marker Raman Characterization of Strained GaN-channels on AlN Using AlN/GaN/AlN Quantum Wells and 15N Isotopes
Authors:
Meng Qi,
Guowang Li,
Vladimir Protasenko,
Pei Zhao,
Jai Verma,
Bo Song,
Satyaki Ganguly,
Mingda Zhu,
Zongyang Hu,
Xiaodong Yan,
Alexander Mintairov,
Huili Grace Xing,
Debdeep Jena
Abstract:
This work shows that the combination of ultrathin highly strained GaN quantum wells embedded in an AlN matrix, with controlled isotopic concentrations of Nitrogen enables a dual marker method for Raman spectroscopy. By combining these techniques, we demonstrate the effectiveness in studying strain in the vertical direction. This technique will enable the precise probing of properties of buried act…
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This work shows that the combination of ultrathin highly strained GaN quantum wells embedded in an AlN matrix, with controlled isotopic concentrations of Nitrogen enables a dual marker method for Raman spectroscopy. By combining these techniques, we demonstrate the effectiveness in studying strain in the vertical direction. This technique will enable the precise probing of properties of buried active layers in heterostructures, and can be extended in the future to vertical devices such as those used for optical emitters, and for power electronics.
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Submitted 31 January, 2015;
originally announced February 2015.
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Self-Assembled Ge QDs Formed by High Temperature Annealing on GaAs and AlxGa1-xAs (001)
Authors:
William A. O'Brien,
Meng Qi,
Lifan Yan,
Chad A. Stephenson,
Vladimir Protasenko,
Huili Grace Xing,
Joanna M. Millunchick,
Mark A. Wistey
Abstract:
This work studies the spontaneous self-assembly of Ge QDs on AlAs, GaAs, and AlGaAs by high temperature in-situ annealing in molecular beam epitaxy (MBE). The morphology of Ge dots formed on AlAs are observed by atom probe tomography, which revealed nearly spherical QDs with diameters approaching 10 nm and confirmed the complete absence of a wetting layer. Reflection high-energy electron diffracti…
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This work studies the spontaneous self-assembly of Ge QDs on AlAs, GaAs, and AlGaAs by high temperature in-situ annealing in molecular beam epitaxy (MBE). The morphology of Ge dots formed on AlAs are observed by atom probe tomography, which revealed nearly spherical QDs with diameters approaching 10 nm and confirmed the complete absence of a wetting layer. Reflection high-energy electron diffraction (RHEED) and atomic force microscopy (AFM) of Ge annealed under similar conditions on GaAs and Al0.3Ga0.7As surfaces reveal the gradual suppression of QD formation with decreasing Al-content of the buffer. To investigate the prospects of using encapsulated Ge dots for upconverting photovoltaics, in which photocurrent can still be generated from photons with energy less than the host bandgap, Ge QDs are embedded into the active region of III-V PIN diodes by MBE. It is observed that orders of magnitude higher short-circuit current is obtained at photon energies below the GaAs bandgap compared with a reference PIN diode without Ge QDs. These results demonstrate the promise of Ge QDs for upconverting solar cells and the realization of device-quality integration of group IV and III-V semiconductors.
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Submitted 29 October, 2014;
originally announced October 2014.
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Ge Quantum Dots Encapsulated by AlAs Grown by Molecular Beam Epitaxy on GaAs Without Extended Defects
Authors:
Meng Qi,
Chad A. Stephenson,
Vladimir Protasenko,
William A. O'Brien,
Alexander Mintairov,
Huili Grace Xing,
Mark A. Wistey
Abstract:
We demonstrate nearly-spherical, strain-free, self-assembled Ge quantum dots (QDs) fully encapsulated by AlAs, grown on (100) GaAs by molecular beam epitaxy (MBE). The QDs were formed without a wetting layer using a high temperature, in-situ anneal. Subsequent AlAs overgrowth was free from threading dislocations and anti-phase domains. The straddling band alignment for Ge in AlAs promises strong a…
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We demonstrate nearly-spherical, strain-free, self-assembled Ge quantum dots (QDs) fully encapsulated by AlAs, grown on (100) GaAs by molecular beam epitaxy (MBE). The QDs were formed without a wetting layer using a high temperature, in-situ anneal. Subsequent AlAs overgrowth was free from threading dislocations and anti-phase domains. The straddling band alignment for Ge in AlAs promises strong and tunable confinement for both electrons and holes. The reflection high-energy electron diffraction (RHEED) pattern changed from 2x3 to 2x5 with anneal, which can be explained by surface reconstructions based on the electron-counting model.
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Submitted 6 November, 2013;
originally announced November 2013.
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High-Voltage Field Effect Transistors with Wide-Bandgap β-Ga2O3 Nanomembranes
Authors:
Wan Sik Hwang,
Amit Verma,
Hartwin Peelaers,
Vladimir Protasenko,
Sergei Rouvimov,
Huili,
Xing,
Alan Seabaugh,
Wilfried Haensch,
Chris Van de Walle,
Zbigniew Galazka,
Martin Albrecht,
Roberto Forrnari,
Debdeep Jena
Abstract:
Nanoscale semiconductor materials have been extensively investigated as the channel materials of transistors for energy-efficient low-power logic switches to enable scaling to smaller dimensions. On the opposite end of transistor applications is power electronics for which transistors capable of switching very high voltages are necessary. Miniaturization of energy-efficient power switches can enab…
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Nanoscale semiconductor materials have been extensively investigated as the channel materials of transistors for energy-efficient low-power logic switches to enable scaling to smaller dimensions. On the opposite end of transistor applications is power electronics for which transistors capable of switching very high voltages are necessary. Miniaturization of energy-efficient power switches can enable the integration with various electronic systems and lead to substantial boosts in energy efficiency. Nanotechnology is yet to have an impact in this arena. In this work, it is demonstrated that nanomembranes of the wide-bandgap semiconductor gallium oxide can be used as channels of transistors capable of switching high voltages, and at the same time can be integrated on any platform. The findings mark a step towards using lessons learnt in nanomaterials and nanotechnology to address a challenge that yet remains untouched by the field.
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Submitted 25 October, 2013;
originally announced October 2013.
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Transistors with Chemically Synthesized Layered Semiconductor WS2 Exhibiting 105 Room Temperature Modulation and Ambipolar Behavior
Authors:
Wan Sik Hwang,
Maja Remskar,
Rusen Yan,
Vladimir Protasenko,
Kristof Tahy,
Soo Doo Chae,
Pei Zhao,
Aniruddha Konar,
Huili,
Xing,
Alan Seabaugh,
Debdeep Jena
Abstract:
We report the realization of field-effect transistors (FETs) made with chemically- synthesized layered two dimensional (2D) crystal semiconductor WS2. The 2D Schottky-barrier FETs demonstrate ambipolar behavior and a high (~105x) on/off current ratio at room temperature with current saturation. The behavior is attributed to the presence of an energy bandgap in the 2D crystal material. The FETs sho…
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We report the realization of field-effect transistors (FETs) made with chemically- synthesized layered two dimensional (2D) crystal semiconductor WS2. The 2D Schottky-barrier FETs demonstrate ambipolar behavior and a high (~105x) on/off current ratio at room temperature with current saturation. The behavior is attributed to the presence of an energy bandgap in the 2D crystal material. The FETs show clear photo response to visible light. The promising electronic and optical characteristics of the devices combined with the layered 2D crystal flexibility make WS2 attractive for future electronic and optical devices.
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Submitted 2 April, 2012;
originally announced April 2012.
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Polarization-Engineering in III-V Nitride Heterostructures: New Opportunities For Device Design
Authors:
Debdeep Jena,
John Simon,
Albert,
Wang,
Yu Cao,
Kevin Goodman,
Jai Verma,
Satyaki Ganguly,
Guowang Li,
Kamal Karda,
Vladimir Protasenko,
Chuanxin Lian,
Thomas Kosel,
Patrick Fay,
Huili Xing
Abstract:
The role of spontaneous and piezoelectric polarization in III-V nitride heterostructure devices is discussed. Problems as well as opportunities in incorporating polarization in abrupt and graded heterojunctions composed of binary, ternary, and quaternary nitrides are outlined.
The role of spontaneous and piezoelectric polarization in III-V nitride heterostructure devices is discussed. Problems as well as opportunities in incorporating polarization in abrupt and graded heterojunctions composed of binary, ternary, and quaternary nitrides are outlined.
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Submitted 30 October, 2010;
originally announced November 2010.
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Photon Counting Statistics For Blinking CdSe-ZnS Quantum Dots: A Levy Walk Process
Authors:
G. Margolin,
V. Protasenko,
M. Kuno,
E. Barkai
Abstract:
This paper has been withdrawn by the authors due to a copyright conflict with the Journal of Physical Chemistry, to which it has been submitted.
This paper has been withdrawn by the authors due to a copyright conflict with the Journal of Physical Chemistry, to which it has been submitted.
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Submitted 4 July, 2006; v1 submitted 8 March, 2006;
originally announced March 2006.
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Power Law Blinking Quantum Dots: Stochastic and Physical Models
Authors:
Gennady Margolin,
Vladimir Protasenko,
Masaru Kuno,
Eli Barkai
Abstract:
We quantify nonergodic and aging behaviors of nanocrystals (or quantum dots) based on stochastic model. Ergodicity breaking is characterized based on time average intensity and time average correlation function, which remain random even in the limit of long measurement time. We argue that certain aspects of nonergodicity can be explained based on a modification of Onsager's diffusion model of an…
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We quantify nonergodic and aging behaviors of nanocrystals (or quantum dots) based on stochastic model. Ergodicity breaking is characterized based on time average intensity and time average correlation function, which remain random even in the limit of long measurement time. We argue that certain aspects of nonergodicity can be explained based on a modification of Onsager's diffusion model of an ion pair esca** neutralization. We explain how diffusion models generate nonergodic behavior, namely a simple mechanism is responsible for the breakdown of the standard assumption of statistical mechanics. Data analysis shows that distributions of on and off intervals in the nanocrystal blinking are almost identical, $ψ_{\pm}(τ)\propto A_{\pm}τ^{-(1+α_{\pm})}$ with $A_{+}\approx A_{-}$ and $α_{+}\approxα_{-}=α$ and $α\approx0.8$. The latter exponent indicates that a simple diffusion model with $α=0.5$ neglecting the electron-hole Coulomb interaction and/or tunneling, is not sufficient.
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Submitted 7 March, 2006; v1 submitted 20 June, 2005;
originally announced June 2005.
