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Multimode vibrational strong coupling in Direct Laser written Mid-IR plasmonic MIM nano-patch antennas
Authors:
Nicholas V. Proscia,
Michael A. Meeker,
Nicholas Sharac,
Frank K. Perkins,
Chase T. Ellis,
Paul D. Cunningham,
Joseph G. Tischler
Abstract:
Metal-Insulator-Metal (MIM) plasmonic structures can confine electromagnetic waves to a deep subwavelength regime, enabling strong light-matter interactions with potential applications in nonlinear optics and on-chip photonic circuitry. In addition, strong coupling of mid-infrared (mid-IR) vibrational transitions to optical cavities provides a way to modify and control a material's chemical reacti…
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Metal-Insulator-Metal (MIM) plasmonic structures can confine electromagnetic waves to a deep subwavelength regime, enabling strong light-matter interactions with potential applications in nonlinear optics and on-chip photonic circuitry. In addition, strong coupling of mid-infrared (mid-IR) vibrational transitions to optical cavities provides a way to modify and control a material's chemical reactivity and may also allow for highly sensitive chemical detection technology. Here, we experimentally and theoretically investigate the mid-IR optical properties of 3D-printed, nanoscale, anisotropic, L-shaped MIM plasmonic cavities. We observe strong vibrational-plasmon coupling between the two dipolar modes of the L-cavity and the polymer dielectric. The resulting three polariton modes are well described by a multimode coupled oscillator model, which we employ to predict the polariton behavior as a function of cavity arm length. The 3D printing technique offers time and cost reduction advantages over typical electron beam lithography and represents a highly accessible and versatile means of printing arbitrary-shaped nanometer-sized mid-IR plasmonic cavities capable of producing strong light-matter interactions for a variety of photonic or photochemical applications.
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Submitted 8 March, 2023; v1 submitted 7 March, 2023;
originally announced March 2023.
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Investigation of photon emitters in Ce-implanted hexagonal boron nitride
Authors:
Gabriel I. López-Morales,
Mingxing Li,
Alexander Hampel,
Sitakanta Satapathy,
Nicholas V. Proscia,
Harishankar Jayakumar,
Artur Lozovoi,
Daniela Pagliero,
Gustavo E. Lopez,
Vinod M. Menon,
Johannes Flick,
Carlos A. Meriles
Abstract:
Color centers in hexagonal boron nitride (hBN) are presently attracting broad interest as a novel platform for nanoscale sensing and quantum information processing. Unfortunately, their atomic structures remain largely elusive and only a small percentage of the emitters studied thus far has the properties required to serve as optically addressable spin qubits. Here, we use confocal fluorescence mi…
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Color centers in hexagonal boron nitride (hBN) are presently attracting broad interest as a novel platform for nanoscale sensing and quantum information processing. Unfortunately, their atomic structures remain largely elusive and only a small percentage of the emitters studied thus far has the properties required to serve as optically addressable spin qubits. Here, we use confocal fluorescence microscopy at variable temperature to study a new class of point defects produced via cerium ion implantation in thin hBN flakes. We find that, to a significant fraction, emitters show bright room-temperature emission, and good optical stability suggesting the formation of Ce-based point defects. Using density functional theory (DFT) we calculate the emission properties of candidate emitters, and single out the CeVB center - formed by an interlayer Ce atom adjacent to a boron vacancy - as one possible microscopic model. Our results suggest an intriguing route to defect engineering that simultaneously exploits the singular properties of rare-earth ions and the versatility of two-dimensional material hosts.
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Submitted 2 October, 2021;
originally announced October 2021.
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Room-temperature Single Photon Emitters in Cubic Boron Nitride Nanocrystals
Authors:
Gabriel I. López-Morales,
Aziza Almanakly,
Sitakanta Satapathy,
Nicholas V. Proscia,
Harishankar Jayakumar,
Valery N. Khabashesku,
Pulickel M. Ajayan,
Carlos A. Meriles,
Vinod M. Menon
Abstract:
Color centers in wide bandgap semiconductors are attracting broad attention as platforms for quantum technologies relying on room-temperature single-photon emission (SPE), and for nanoscale metrology applications building on the centers' response to electric and magnetic fields. Here, we demonstrate room-temperature SPE from defects in cubic boron nitride (cBN) nanocrystals, which we unambiguously…
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Color centers in wide bandgap semiconductors are attracting broad attention as platforms for quantum technologies relying on room-temperature single-photon emission (SPE), and for nanoscale metrology applications building on the centers' response to electric and magnetic fields. Here, we demonstrate room-temperature SPE from defects in cubic boron nitride (cBN) nanocrystals, which we unambiguously assign to the cubic phase using spectrally resolved Raman imaging. These isolated spots show photoluminescence (PL) spectra with zero-phonon lines (ZPLs) within the visible region (496-700 nm) when subject to sub-bandgap laser excitation. Second-order autocorrelation of the emitted photons reveals antibunching with $g^{2}$ ~ 0.2 and a decay constant of 2.75 ns that is further confirmed through fluorescence lifetime measurements. The results presented herein prove the existence of optically addressable isolated quantum emitters originating from defects in cBN, making this material an interesting platform for opto-electronic devices and quantum applications.
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Submitted 24 December, 2019;
originally announced December 2019.
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Coupling of deterministically activated quantum emitters in hexagonal boron nitride to plasmonic surface lattice resonances
Authors:
Nicholas V. Proscia,
Robert J. Collison,
Carlos A. Meriles,
Vinod M. Menon
Abstract:
Cooperative phenomena stemming from radiation-field-mediated coupling between individual quantum emitters are presently attracting broad interest for on-chip photonic quantum memories and long-range entanglement. Common to these applications is the generation of electromagnetic modes over macroscopic distances. Much research, however, is still needed before such systems can be deployed in the form…
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Cooperative phenomena stemming from radiation-field-mediated coupling between individual quantum emitters are presently attracting broad interest for on-chip photonic quantum memories and long-range entanglement. Common to these applications is the generation of electromagnetic modes over macroscopic distances. Much research, however, is still needed before such systems can be deployed in the form of practical devices, starting with the investigation of alternate physical platforms. Quantum emitters in two-dimensional (2D) systems provide an intriguing route because these materials can be adapted to arbitrarily shaped substrates to form hybrid systems where emitters are near-field-coupled to suitable optical modes. Here, we report a scalable coupling method allowing color center ensembles in a van der Waals material - hexagonal boron nitride - to couple to a delocalized high quality plasmonic surface lattice resonance. This type of architecture is promising for photonic applications, especially given the ability of the hexagonal boron nitride emitters to operate as single-photon sources at room temperature.
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Submitted 5 September, 2019;
originally announced September 2019.
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Scalable microcavity-coupled emitters in hexagonal boron nitride
Authors:
Nicholas V. Proscia,
Harishankar Jayakumar,
Xiaochen Ge,
Gabriel Lopez-Morales,
Zav Shotan,
Weidong Zhou,
Carlos A. Meriles,
Vinod M. Menon
Abstract:
Scalable integration of bright emitters in quantum photonic structures is an important step in the broader quest to generate and manipulate single photons via compact solid-state devices. Unfortunately, implementations relying on material platforms that also serve as the emitter host often suffer from a trade-off between the desired emitter properties and the photonic system practicality and perfo…
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Scalable integration of bright emitters in quantum photonic structures is an important step in the broader quest to generate and manipulate single photons via compact solid-state devices. Unfortunately, implementations relying on material platforms that also serve as the emitter host often suffer from a trade-off between the desired emitter properties and the photonic system practicality and performance. Here, we demonstrate 'pick and place' integration of a Silicon Nitride microdisk optical resonator with a bright emitter host in the form of 20nm thick hexagonal boron nitride (hBN).The film folds around the microdisk maximizing contact to ultimately form a composite hBN/Si3N4 structure. The local strain that develops in the hBN film at the resonator circumference deterministically activates a low density of SPEs within the whispering gallery mode volume of the microdisk. These conditions allow us to demonstrate cavity-mediated out-coupling and Purcell enhancement of emission from hBN color centers through the microdisk cavity modes. Our results pave the route toward the development of scalable quantum photonic circuits with independent emitter/resonator optimization for active and passive functionalities.
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Submitted 15 June, 2019;
originally announced June 2019.
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Toward the Identification of Atomic Defects in Hexagonal Boron Nitride: X-Ray Photoelectron Spectroscopy and First-Principles Calculations
Authors:
Gabriel I. López-Morales,
Nicholas V. Proscia,
Gustavo E. López,
Carlos A. Meriles,
Vinod M. Menon
Abstract:
Defects in hexagonal boron nitride (hBN) exhibit single-photon emission (SPE) and are thus attracting broad interest as platforms for quantum information and spintronic applications. However, the atomic structure and the specific impact of the local environment on the defect physical properties remain elusive. Here we articulate X-ray photoelectron spectroscopy (XPS) and first-principles calculati…
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Defects in hexagonal boron nitride (hBN) exhibit single-photon emission (SPE) and are thus attracting broad interest as platforms for quantum information and spintronic applications. However, the atomic structure and the specific impact of the local environment on the defect physical properties remain elusive. Here we articulate X-ray photoelectron spectroscopy (XPS) and first-principles calculations to discern the experimentally-observed point defects responsible for the quantum emission observed in hBN. XPS measurements show a broad band, which was deconvolved and then assigned to $N_{B}V_{N}$, $V_{N}$, $C_{B}$, $C_{B}V_{N}$, and $O_{2B}V_{N}$ defect structures using Density Functional Theory (DFT) core-level binding energy (BE) calculations.
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Submitted 14 November, 2018;
originally announced November 2018.
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Near-deterministic activation of room temperature quantum emitters in hexagonal boron nitride
Authors:
Nicholas V. Proscia,
Zav Shotan,
Harishankar Jayakumar,
Prithvi Reddy,
Michael Dollar,
Audrius Alkauskas,
Marcus Doherty,
Carlos A. Meriles,
Vinod M. Menon
Abstract:
Applications of quantum science to computing, cryptography and imaging are on their way to becoming key next generation technologies. Owing to the high-speed transmission and exceptional noise properties of photons, quantum photonic architectures are likely to play a central role. A long-standing hurdle, however, has been the realization of robust, device-compatible single photon sources that can…
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Applications of quantum science to computing, cryptography and imaging are on their way to becoming key next generation technologies. Owing to the high-speed transmission and exceptional noise properties of photons, quantum photonic architectures are likely to play a central role. A long-standing hurdle, however, has been the realization of robust, device-compatible single photon sources that can be activated and controlled on demand. Here we use strain engineering to create large arrays of quantum emitters in two-dimensional hexagonal boron nitride (hBN). The large energy gap inherent to this Van der Waals material stabilizes the emitters at room temperature within nanoscale regions defined by substrate-induced deformation of the flake. Combining analytical and numerical modeling we show that emitter activation is likely the result of carrier trap** in deformation potential wells localized near the points where the hBN flake reaches the highest curvature. These findings, therefore, hint at novel opportunities for the manipulation of single photon sources through the combined control of strain and external electrostatic potentials under ambient conditions.
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Submitted 18 October, 2017;
originally announced December 2017.
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Spin-polarized Voltages on a 2D Self-assembled Plasmonic Crystal
Authors:
Nicholas V. Proscia,
Matthew Moocarme,
Roger Chang,
Ilona Kretzschmar,
Vinod M. Menon,
Luat T. Vuong
Abstract:
The Photon Drag Effect (PDE) is a nonlinear process akin to optical rectification in which the momentum of light is transferred to charged carriers and converted to a DC voltage. Here, we experimentally demonstrate the spin-polarized voltage, associated with the transference of light's spin angular momenta to the linear momenta of charges, with visible-light illumination on a nanovoid self-assembl…
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The Photon Drag Effect (PDE) is a nonlinear process akin to optical rectification in which the momentum of light is transferred to charged carriers and converted to a DC voltage. Here, we experimentally demonstrate the spin-polarized voltage, associated with the transference of light's spin angular momenta to the linear momenta of charges, with visible-light illumination on a nanovoid self-assembled plasmonic crystal surface. Numerical calculations show that the gradient force, generally considered independent of polarization, is responsible for the majority of the momentum transfer. The PDE in this achiral system represents a distinct spin-orbit interaction that produces asymmetric hotspots whose locations change with circular polarization handedness. Our results significantly advance our understanding of the PDE and demonstrate realistic potential for scalable plasmonic materials that utilize PDE.
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Submitted 15 September, 2015;
originally announced September 2015.
