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Prediction and identification of point defect fingerprints in the X-ray photoelectron spectra of TiN$_x$
Authors:
Pavel Ondračka,
Pauline Kümmerl,
Marcus Hans,
Stanislav Mráz,
Daniel Primetzhofer,
David Holec,
Petr Vašina,
Jochen M. Schneider
Abstract:
We investigate the effect of selected N and Ti point defects in $B$1 TiN on N 1s and Ti 2p$_{3/2}$ binding energies (BE) by experiments and ab initio calculations. X-ray photoelectron spectroscopy (XPS) measurements of Ti-deficient TiN films reveal additional N 1s spectral components at lower binding energies. Ab initio calculations predict that these components are caused by either Ti vacancies,…
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We investigate the effect of selected N and Ti point defects in $B$1 TiN on N 1s and Ti 2p$_{3/2}$ binding energies (BE) by experiments and ab initio calculations. X-ray photoelectron spectroscopy (XPS) measurements of Ti-deficient TiN films reveal additional N 1s spectral components at lower binding energies. Ab initio calculations predict that these components are caused by either Ti vacancies, which induce a N 1s BE shift of $-0.53$ eV in its first N neighbors, and/or N tetrahedral interstitials, which have their N 1s BE shifted by $-1.18$ eV and also shift BE of their first N neighbors by $-0.53$ eV. However, the {\it ab initio} calculations also reveal that the tetrahedral N interstitial is unstable at room temperature. We, therefore, unambiguously attribute the detected signal to Ti vacancies. Furthermore, the vacancy concentration in Ti-deficient TiN was quantified with XPS supported by ab initio calculations. The largest BE shifts of $-1.53$, $-1.80$ and $-2.28$ eV for Ti 2p$_{3/2}$ electrons are predicted for the Ti tetrahedral, split (10$\overline{1}$)-aligned and split (111)-aligned interstitial atoms, respectively, and we, therefore, propose XPS could detect them. Other defects such as N vacancy or N split (10$\overline{1}$)-aligned interstitial introduce smaller N 1s and Ti 2p$_{3/2}$ BE shifts and are unlikely to be detectable experimentally. Our work highlights the potential of ab initio-guided XPS measurements in detecting and quantifying point defects in $B$1 TiN.
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Submitted 28 March, 2024;
originally announced March 2024.
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All epitaxial self-assembly of vertically-confined silicon color centers using ultra-low temperature epitaxy
Authors:
Johannes Aberl,
Enrique Prado Navarrete,
Merve Karaman,
Diego Haya Enriquez,
Christoph Wilflingseder,
Andreas Salomon,
Daniel Primetzhofer,
Markus Andreas Schubert,
Giovanni Capellini,
Thomas Fromherz,
Peter Deák,
Péter Udvarhelyi,
Li Song,
Ádám Gali,
Moritz Brehm
Abstract:
Silicon-based color-centers (SiCCs) have recently emerged as quantum-light sources that can be combined with telecom-range Si Photonics platforms. Unfortunately, using current SiCC fabrication, deterministic control over the vertical emitter position is impossible due to ion-implantation's stochastic nature. To overcome this bottleneck towards high-yield integration, we demonstrate a radically inn…
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Silicon-based color-centers (SiCCs) have recently emerged as quantum-light sources that can be combined with telecom-range Si Photonics platforms. Unfortunately, using current SiCC fabrication, deterministic control over the vertical emitter position is impossible due to ion-implantation's stochastic nature. To overcome this bottleneck towards high-yield integration, we demonstrate a radically innovative creation method for various SiCCs, solely relying on epitaxial growth of Si and C-doped Si at atypically-low temperatures in a ultra-clean growth environment. These telecom emitters can be confined within sub-1nm thick layers embedded at arbitrary vertical positions within a highly crystalline Si matrix. Tuning growth conditions and do**, different SiCC types, e.g., W-centers, T-centers, G-centers, or derivatives like G'-centers can be created, which are particularly promising as Si-based single-photon sources and spin-photon interfaces. The zero-phonon emission from G'-centers can be conveniently tuned by the C-concentration, leading to a systematic wavelength shift and linewidth narrowing towards low emitter densities.
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Submitted 21 May, 2024; v1 submitted 29 February, 2024;
originally announced February 2024.
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Local electronic excitations by slow light ions in tungsten
Authors:
Evgeniia Ponomareva,
Eduardo Pitthan,
Radek Holeňák,
Jila Shams-Latifi,
Glen Pádraig Kiely,
Daniel Primetzhofer,
Andrea Sand
Abstract:
Accurately predicting the electronic energy deposition of ions in materials is an important challenge in both fundamental and applied research. While employing ab initio simulations to investigate electronic stop** of ions in matter holds promise, its combined use with experimental measurements paves the way for obtaining reliable data. In this paper, we present a collaborative study using real-…
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Accurately predicting the electronic energy deposition of ions in materials is an important challenge in both fundamental and applied research. While employing ab initio simulations to investigate electronic stop** of ions in matter holds promise, its combined use with experimental measurements paves the way for obtaining reliable data. In this paper, we present a collaborative study using real-time time-dependent density functional theory and experimental methods to determine the electronic stop** power of hydrogen and helium ions in tungsten, a primary candidate material for future nuclear fusion devices. While calculated stop** powers in hyperchanneling trajectories are significantly lower than the experimental data, off-center and random geometries demonstrate a better agreement. We show that the deviation from velocity proportionality for both projectiles traversing the hyperchanneling directions can be explained through the existence of a threshold velocity leading to the activation of semicore states. Additionally, we analyse the pseudopotential and the trajectory dependence of computed electronic energy losses. It is demonstrated that the role of including inner-shell electrons varies depending on the velocity range. While these states play a crucial role at high projectile velocities by introducing additional dissipation channels, their impact diminishes in the low-velocity range. Finally, we introduce a simple expression that links electronic energy losses in different trajectories to local electron density, and we show that utilizing this formula allows for quite accurate predictions of stop** powers around the Bragg peak.
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Submitted 11 January, 2024;
originally announced January 2024.
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Valence electron concentration- and N vacancy-induced elasticity in cubic early transition metal nitrides
Authors:
Soheil Karimi Aghda,
Dimitri Bogdanovski,
Lukas Loefler,
Heng Han Sua,
Lena Patterer,
Damian M. Holzapfel,
Arnaud le Febvrier,
Marcus Hans,
Daniel Primetzhofer,
Jochen M. Schneider
Abstract:
Motivated by frequently reported deviations from stoichiometry in cubic transition metal nitride (TMNx) thin films, the effect of N-vacancy concentration on the elastic properties of cubic TiNx, ZrNx, VNx, NbNx, and MoNx (0.72<x<1.00) is systematically studied by density functional theory (DFT) calculations. The predictions are validated experimentally for VNx (0.77<x<0.97). The DFT results indica…
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Motivated by frequently reported deviations from stoichiometry in cubic transition metal nitride (TMNx) thin films, the effect of N-vacancy concentration on the elastic properties of cubic TiNx, ZrNx, VNx, NbNx, and MoNx (0.72<x<1.00) is systematically studied by density functional theory (DFT) calculations. The predictions are validated experimentally for VNx (0.77<x<0.97). The DFT results indicate that the elastic behavior of the TMNx depends on both the N-vacancy concentration and the valence electron concentration (VEC) of the transition metal: While TiNx and ZrNx exhibit vacancy-induced reductions in elastic modulus, VNx and NbNx show an increase. These trends can be rationalized by considering vacancy-induced changes in elastic anisotropy and bonding. While introduction of N-vacancies in TiNx results in a significant reduction of elastic modulus along all directions and a lower average bond strength of Ti-N, the vacancy-induced reduction in [001] direction of VNx is overcompensated by the higher stiffness along [011] and [111] directions, resulting in a higher average bond strength of V-N. To validate the predicted vacancy-induced changes in elasticity experimentally, close-to-single-crystal VNx (0.77<x<0.97) are grown on MgO(001) substrates. As the N-content is reduced, the relaxed lattice parameter a0, as probed by X-ray diffraction, decreases from 4.128 A to 4.096 A. This reduction in lattice parameter is accompanied by an anomalous 11% increase in elastic modulus, as determined by nanoindentation. As the experimental data agree with the predictions, the elasticity enhancement in VNx upon N-vacancy formation can be understood based on the concomitant changes in elastic anisotropy and bonding.
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Submitted 27 May, 2023;
originally announced May 2023.
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On the determination of the thermal shock parameter of MAX phases: A combined experimental-computational study
Authors:
Matej Fekete,
Clio Azina,
Pavel Ondračka,
Lukas Löfler,
Dimitri Bogdanovski,
Daniel Primetzhofer,
Marcus Hans,
Jochen M. Schneider
Abstract:
Thermal shock resistance is one of the performance-defining properties for applications where extreme temperature gradients are required. The thermal shock resistance of a material can be described by means of the thermal shock parameter RT. Here, the thermo-mechanical properties required for the calculation of RT are quantum-mechanically predicted, experimentally determined, and compared for Ti3A…
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Thermal shock resistance is one of the performance-defining properties for applications where extreme temperature gradients are required. The thermal shock resistance of a material can be described by means of the thermal shock parameter RT. Here, the thermo-mechanical properties required for the calculation of RT are quantum-mechanically predicted, experimentally determined, and compared for Ti3AlC2 and Cr2AlC MAX phases. The coatings are synthesized utilizing direct current magnetron sputtering without additional heating, followed by vacuum annealing. It is shown that the RT of both Ti3AlC2 and Cr2AlC obtained via simulations are in good agreement with the experimentally obtained ones. Comparing the MAX phase coatings, both experiments and simulations indicate superior thermal shock behavior of Ti3AlC2 compared to Cr2AlC, attributed primarily to the larger linear coefficient of thermal expansion of Cr2AlC. The results presented herein underline the potential of ab initio calculations for predicting the thermal shock behavior of ionically-covalently bonded materials.
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Submitted 15 May, 2023; v1 submitted 17 March, 2023;
originally announced March 2023.
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Room-temperature spin glass behavior in zinc ferrite epitaxial thin films
Authors:
Julia Lumetzberger,
Verena Ney,
Anna Zhakarova,
Nieli Daffe,
Daniel Primetzhofer,
Andreas Ney
Abstract:
Zinc ferrite (ZnFe$_{\text{2}}$O$_{\text{4}}$) epitaxial thin films were grown by reactive magnetron sputtering on MgAl$_{\text{2}}$O$_{\text{4}}$ and Al$_{\text{2}}$O$_{\text{3}}$ substrates varying a range of preparation parameters. The resulting structural and magnetic properties were investigated using a range of experimental techniques confirming epitaxial growth of ZnFe$_{\text{2}}$O…
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Zinc ferrite (ZnFe$_{\text{2}}$O$_{\text{4}}$) epitaxial thin films were grown by reactive magnetron sputtering on MgAl$_{\text{2}}$O$_{\text{4}}$ and Al$_{\text{2}}$O$_{\text{3}}$ substrates varying a range of preparation parameters. The resulting structural and magnetic properties were investigated using a range of experimental techniques confirming epitaxial growth of ZnFe$_{\text{2}}$O$_{\text{4}}$ with the nominal stoichiometric composition and long range magnetic order at and above room temperature. The main preparation parameter influencing the temperature $T_{\text{f}}$ of the bifurcation between $M(T)$ curves under field cooled and zero-field cooled conditions was found to be the growth rate of the films, while growth temperature or the Ar:O$_2$ ratio did not systematically influence $T_{\text{f}}$. Furthermore $T_{\text{f}}$ was found to be systematically higher for MgAl$_{\text{2}}$O$_{\text{4}}$ as substrate and $T_{\text{f}}$ extends to above room temperature. While in some samples $T_{\text{f}}$ seems to be more likely correlated with superparamagentism, the highest $T_{\text{f}}$ occurs in ZnFe$_{\text{2}}$O$_{\text{4}}$ epitaxial films where experimental signatures of magnetic glassiness can be found. Element-selective X-ray magnetic circular dichroism measurements aim at associating the magnetic glassiness with the occurrence of a different valence state and lattice site incorporation of Fe pointing to a complex interplay of various competing magnetic interactions in ZnFe$_{\text{2}}$O$_{\text{4}}$.
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Submitted 25 January, 2023;
originally announced January 2023.
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Phase formation in CrFeCoNi nitride thin films
Authors:
Smita G. Rao,
Boburjon Mukhamedov,
Gyula Nagy,
Eric N. Tseng,
Rui Shu,
Robert Boyd,
Daniel Primetzhofer,
Per O. Å. Persson,
Björn Alling,
Igor A. Abrikosov,
Arnaud le Febvrier,
Per Eklund
Abstract:
As a single-phase alloy, CrFeCoNi is a face centered cubic (fcc) material related to the archetypical high-entropy Cantor alloy CrFeCoNiMn. For thin films, CrFeCoNi of approximately equimolar composition tends to assume an fcc structure when grown at room temperature by magnetron sputtering. However, the single-phase solid solution state is typically not achieved for thin films grown at higher tem…
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As a single-phase alloy, CrFeCoNi is a face centered cubic (fcc) material related to the archetypical high-entropy Cantor alloy CrFeCoNiMn. For thin films, CrFeCoNi of approximately equimolar composition tends to assume an fcc structure when grown at room temperature by magnetron sputtering. However, the single-phase solid solution state is typically not achieved for thin films grown at higher temperatures. The same holds true for Cantor alloy-based ceramics (nitrides and oxides), where phase formation is extremely sensitive to process parameters such as the amount of reactive gas. This study combines theoretical and experimental methods to understand the phase formation in nitrogen-containing CrFeCoNi thin films. Density functional theory calculations considering three competing phases (CrN, Fe-Ni and Co) show that the free energy of mixing, delta G of (CrFeCoNi)1-xNx solid solutions has a maximum at x = 0.20-0.25, and delta G becomes lower when x less than 0.20, greater than 0.25. Thin films of (CrFeCoNi)1-xNx (x = 0.14-0.41) grown by magnetron sputtering show stabilization of the metallic fcc when x lesser than or equal to 0.22 and the stabilization of the NaCl B1 structure when x is greater than 0.33, consistent with the theoretical prediction. In contrast, films with intermediate amounts of nitrogen (x = 0.22) grown at higher temperatures show segregation into multiple phases of CrN, Fe-Ni-rich and Co. These results offer an explanation for the requirement of kinetically limited growth conditions at low temperature for obtaining single-phase CrFeCoNi Cantor-like nitrogen-containing thin films and are of importance for understanding the phase-formation mechanisms in multicomponent ceramics.
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Submitted 10 November, 2022;
originally announced November 2022.
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Trajectory dependence of electronic energy-loss straggling at keV ion energies
Authors:
Svenja Lohmann,
Radek Holeňák,
Pedro L. Grande,
Daniel Primetzhofer
Abstract:
We have measured the electronic energy-loss straggling of protons, helium, boron and silicon ions in silicon using a transmission time-of-flight approach. Ions with velocities between 0.25 and 1.6 times the Bohr velocity were transmitted through single-crystalline Si(100) nanomembranes in either channelling or random geometry to study the impact parameter dependence of energy-loss straggling. Nucl…
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We have measured the electronic energy-loss straggling of protons, helium, boron and silicon ions in silicon using a transmission time-of-flight approach. Ions with velocities between 0.25 and 1.6 times the Bohr velocity were transmitted through single-crystalline Si(100) nanomembranes in either channelling or random geometry to study the impact parameter dependence of energy-loss straggling. Nuclear and path length contributions to the straggling were determined with the help of Monte Carlo simulations. Our results exhibit an increase in straggling with increasing ion velocity for channelled trajectories for all projectiles as well as for protons and helium in random geometry. In contrast for heavier ions, electronic straggling at low velocities does not decrease further but plateaus and even seems to increase again. We compare our experimental results with transport cross section calculations. The satisfying agreement for helium shows that electronic stop** for light ions is dominated by electron-hole pair excitations, and that the previously observed trajectory dependence can indeed be attributed to a higher mean charge state for random trajectories. No agreement is found for boron and silicon indicating the breakdown of models based solely on electron-hole pair excitations, and that local electron-promotion and charge-exchange events significantly contribute to energy loss at low velocities.
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Submitted 12 January, 2023; v1 submitted 28 September, 2022;
originally announced September 2022.
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Yttrium incorporation in Cr2AlC: On the metastable phase formation and decomposition of (Cr,Y)2AlC MAX phase thin films
Authors:
Clio Azina,
Tim Bartsch,
Damian M. Holzapfel,
Martin Dahlqvist,
Johanna Rosen,
Lukas Löfler,
Alba San Jose Mendez,
Marcus Hans,
Daniel Primetzhofer,
Jochen M. Schneider
Abstract:
Herein we report on the synthesis of a metastable (Cr,Y)2AlC MAX phase solid solution by co-sputtering from a composite Cr-Al-C and elemental Y target, at room temperature, followed by annealing. While direct high-temperature synthesis resulted in multiphase films, as evidenced by X-ray diffraction analyses, room temperature depositions, followed by annealing to 760 °C led to the formation of phas…
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Herein we report on the synthesis of a metastable (Cr,Y)2AlC MAX phase solid solution by co-sputtering from a composite Cr-Al-C and elemental Y target, at room temperature, followed by annealing. While direct high-temperature synthesis resulted in multiphase films, as evidenced by X-ray diffraction analyses, room temperature depositions, followed by annealing to 760 °C led to the formation of phase pure (Cr,Y)2AlC by diffusion. Higher annealing temperatures caused decomposition of the metastable phase into Cr2AlC, Y5Al3 , and Cr-carbides. In contrast to pure Cr2AlC, the Y-containing phase crystallizes directly in the MAX phase structure instead of first forming a disordered solid solution. Furthermore, the crystallization temperature was shown to be Y-content dependent and was increased by ~200 °C for 5 at.% Y compared to Cr2AlC. Calculations predicting the metastable phase formation of (Cr,Y)2AlC and its decomposition are in excellent agreement with the experimental findings.
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Submitted 15 September, 2022;
originally announced September 2022.
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Time-of-flight recoil detection in transmission using pulsed keV ion beams enables sensitive multi-element profiling with high depth resolution
Authors:
R. Holeňák,
S. Lohmann,
D. Primetzhofer
Abstract:
The potential of time-of-flight recoil detection in transmission geometry using pulsed keV ion beams for sensitive multi-element profiling of thin membranes and quasi-2D systems is assessed. While the time-of-flight approach allows for simultaneous detection of multiple elements, to the largest extent irrespective of recoil charge states, the keV projectile energies guarantee high recoil-cross sec…
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The potential of time-of-flight recoil detection in transmission geometry using pulsed keV ion beams for sensitive multi-element profiling of thin membranes and quasi-2D systems is assessed. While the time-of-flight approach allows for simultaneous detection of multiple elements, to the largest extent irrespective of recoil charge states, the keV projectile energies guarantee high recoil-cross sections yielding high sensitivity at low dose. We demonstrate the capabilities of the approach using 22Ne and 40Ar as projectiles transmitted through thin carbon foil featuring optional LiF-coatings and single crystalline silicon membranes for different sample preparation routines and crystal orientations. For a large position sensitive detector (0.13 sr), a high-depth resolution below 6 nm and sensitivity below 1014 atoms/cm2 was achieved. For crystalline targets, we show how the probability of creation and detection of recoils and their observed angular distribution depend on sample orientation.
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Submitted 17 March, 2022;
originally announced March 2022.
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Control of site occupancy by variation of the Zn and Al content in NiZnAl ferrite epitaxial films with low magnetic dam**
Authors:
Julia Lumetzberger,
Verena Ney,
Anna Zhakarova,
Daniel Primetzhofer,
Kilian Lenz,
Andreas Ney
Abstract:
The structural and magnetic properties of Zn/Al doped nickel ferrite thin films can be adjusted by changing the Zn and Al content. The films are epitaxially grown by reactive magnetron sputtering using a triple cluster system to sputter simultaneously from three different targets. Upon the variation of the Zn content the films remain fully strained with similar structural properties, while the mag…
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The structural and magnetic properties of Zn/Al doped nickel ferrite thin films can be adjusted by changing the Zn and Al content. The films are epitaxially grown by reactive magnetron sputtering using a triple cluster system to sputter simultaneously from three different targets. Upon the variation of the Zn content the films remain fully strained with similar structural properties, while the magnetic properties are strongly affected. The saturation magnetization and coercivity as well as resonance position and linewidth from ferromagnetic resonance (FMR) measurements are altered depending on the Zn content in the material. The reason for these changes can be elucidated by investigation of the x-ray magnetic circular dichroism spectra to gain site and valence specific information with elemental specificity. Additionally, from a detailed investigation by broadband FMR a minimum in g-factor and linewidth could be found as a function of film thickness. Furthermore, the results from a variation of the Al content using the same set of measurement techniques is given. Other than for Zn, the variation of Al affects the strain and even more pronounced changes to the magnetic properties are apparent.
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Submitted 23 December, 2021;
originally announced December 2021.
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On the correlation of angular distributions of keV ions and trajectory-dependent electronic excitations in transmission channelling geometry
Authors:
Radek Holeňák,
Svenja Lohmann,
Kristina Komander,
Daniel Primetzhofer
Abstract:
We use energy discrimination of keV ions transmitted through a thin, single-crystalline silicon membrane to correlate specific angular distribution patterns formed in channelling geometry with trajectory-dependent electronic energy loss. The integral energy and intensity distribution of transmitted ions can thus be dissected into on one side axially channelled projectiles travelling along rather s…
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We use energy discrimination of keV ions transmitted through a thin, single-crystalline silicon membrane to correlate specific angular distribution patterns formed in channelling geometry with trajectory-dependent electronic energy loss. The integral energy and intensity distribution of transmitted ions can thus be dissected into on one side axially channelled projectiles travelling along rather straight trajectories and on the other side dechannelled projectiles predominantly experiencing blocking. Angular distributions of transmitted ions are further simulated with two different Monte-Carlo codes.
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Submitted 12 November, 2021;
originally announced November 2021.
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$\textit{Ab initio}$-guided X-ray photoelectron spectroscopy quantification of Ti vacancies in Ti$_{1-δ}$O$_x$N$_{1-x}$ thin films
Authors:
Pavel Ondračka,
Marcus Hans,
Damian M. Holzapfel,
Daniel Primetzhofer,
David Holec,
Jochen M. Schneider
Abstract:
$\textit{Ab initio}$ calculations were employed to investigate the effect of oxygen concentration dependent Ti vacancies formation on the core electron binding energy shifts in cubic titanium oxynitride (Ti$_{1-δ}$O$_x$N$_{1-x}$). It was shown, that the presence of a Ti vacancy reduces the 1s core electron binding energy of the first N neighbors by $\sim…
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$\textit{Ab initio}$ calculations were employed to investigate the effect of oxygen concentration dependent Ti vacancies formation on the core electron binding energy shifts in cubic titanium oxynitride (Ti$_{1-δ}$O$_x$N$_{1-x}$). It was shown, that the presence of a Ti vacancy reduces the 1s core electron binding energy of the first N neighbors by $\sim$0.6 eV and that this effect is additive with respect to the number of vacancies. Hence it is predicted that the Ti vacancy concentration can be revealed from the intensity of the shifted components in the N 1s core spectra region. This notion was critically appraised by fitting the N 1s region obtained via X-ray photoelectron spectroscopy (XPS) measurements of Ti$_{1-δ}$O$_x$N$_{1-x}$ thin films deposited by high power pulsed magnetron sputtering. A model to quantify the Ti vacancy concentration based on the intensity ratio between the N 1s signal components, corresponding to N atoms with locally different Ti vacancy concentration, was developed. Herein a random vacancy distribution was assumed and the influence of surface oxidation from atmospheric exposure after deposition was considered. The so estimated vacancy concentrations are consistent with a model calculating the vacancy concentration based on the O concentrations determined by elastic recoil detection analysis and text book oxidation states and hence electroneutrality. Thus, we have unequivocally established that the formation and population of Ti vacancies in cubic Ti$_{1-δ}$O$_x$N$_{1-x}$ thin films can be quantified by XPS measurements from N 1s core electron binding energy shifts.
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Submitted 22 October, 2021; v1 submitted 8 October, 2021;
originally announced October 2021.
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Experimental electronic stop** cross section of tungsten for light ions in a large energy interval
Authors:
M. V. Moro,
P. M. Wolf,
B. Bruckner,
F. Munnik,
R. Heller,
P. Bauer,
D. Primetzhofer
Abstract:
Electronic stop** cross section of tungsten for light ions was experimentally measured in a wide energy interval (20 to 6000 keV for protons and 50 to 9000 keV for helium) in backscattering and transmission geometries. The measurements were carried out in three laboratories (Austria, Germany and Sweden) using five different set-ups, the stop** data deduced from different data sets showed excel…
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Electronic stop** cross section of tungsten for light ions was experimentally measured in a wide energy interval (20 to 6000 keV for protons and 50 to 9000 keV for helium) in backscattering and transmission geometries. The measurements were carried out in three laboratories (Austria, Germany and Sweden) using five different set-ups, the stop** data deduced from different data sets showed excellent agreement amongst each other, with total uncertainty varying within 1.5 - 3.8\% for protons and 2.2 - 5.5\% for helium, averaged over the respective energy range of each data set. The final data is compared to available data and to widely adopted semi-empirical and theoretical approaches, and found to be in good agreement with most adopted models at energies around and above the stop** maximum. Most importantly, our results extend the energy regime towards lower energies, and are thus of high technological relevance, e.g., in fusion research. At these low energies, our findings also revealed that tungsten - featured with fully and partially occupied f- and d-subshells, respectively, can be modeled as an electron gas for the energy loss process.
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Submitted 1 March, 2021;
originally announced March 2021.
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Photochromic response of encapsulated oxygen-containing yttrium hydride thin films
Authors:
Marcos V. Moro,
Sigurbjörn M. Aðalsteinsson,
Tuan. T. Tran,
Dmitrii Moldarev,
Ayan Samanta,
Max Wolff,
Daniel Primetzhofer
Abstract:
Photochromic oxygen$-$containing yttrium$-$hydride thin films are synthesized by argon$-$magnetron sputtering on microscope slides. Some of them are encapsulated with a thin, transparent and non$-$photochromic diffusion-barrier layer of either Al2O3 or Si3N4. Ion beam-based methods prove that these protective diffusion barriers are stable and free from pinholes, with thicknesses of only a few tens…
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Photochromic oxygen$-$containing yttrium$-$hydride thin films are synthesized by argon$-$magnetron sputtering on microscope slides. Some of them are encapsulated with a thin, transparent and non$-$photochromic diffusion-barrier layer of either Al2O3 or Si3N4. Ion beam-based methods prove that these protective diffusion barriers are stable and free from pinholes, with thicknesses of only a few tens of nanometers. Optical spectrophotometry reveals that the photochromic response and relaxation time for both $-$ protected and unprotected $-$ samples are almost identical. Ageing effects in the unprotected films lead to degradation of the photochromic performance (self$-$delamination) while the photochromic response for the encapsulated films is stable. Our results show that the environment does not play a decisive role for the photochromic process and encapsulation of oxygen containing rare-earth hydride films with transparent and non-organic thin diffusion barrier layers provides long-time stability of the films, mandatory for applications as photochromic coatings on e.g., smart windows.
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Submitted 30 December, 2020;
originally announced December 2020.
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Simultaneous assessment of energy, charge state and angular distribution for medium energy ions interacting with ultra-thin self-supporting targets: a time-of-flight approach
Authors:
R. Holeňák,
S. Lohmann,
F. Sekula,
D. Primetzhofer
Abstract:
We demonstrate simultaneous measurements of the charge state, energy and angular distribution of keV ions in transmission experiments through self-supporting foils. Using a time-of-flight approach we have introduced an electrostatic deflection apparatus as an extension to existing medium energy ion scattering (MEIS) instrumentation. Different positive, neutral and negative charge states have been…
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We demonstrate simultaneous measurements of the charge state, energy and angular distribution of keV ions in transmission experiments through self-supporting foils. Using a time-of-flight approach we have introduced an electrostatic deflection apparatus as an extension to existing medium energy ion scattering (MEIS) instrumentation. Different positive, neutral and negative charge states have been discriminated and quantified for initially singly charged beams of He, N, O and Ne in the energy range from 25 to 250 keV. In parallel, the ion energy after interaction with the target has been assessed for all detected particles, while particles can be discriminated by deflection angle. Self-supporting thin carbon foils were used as samples to benchmark our experiments with literature data where available.
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Submitted 18 November, 2020;
originally announced November 2020.
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Mn-rich MnSb2Te4: A topological insulator with magnetic gap closing at high Curie temperatures of 45-50 K
Authors:
S. Wimmer,
J. Sánchez-Barriga,
P. Küppers,
A. Ney,
E. Schierle,
F. Freyse,
O. Caha,
J. Michalicka,
M. Liebmann,
D. Primetzhofer,
M. Hoffmann,
A. Ernst,
M. M. Otrokov,
G. Bihlmayer,
E. Weschke,
B. Lake,
E. V. Chulkov,
M. Morgenstern,
G. Bauer,
G. Springholz,
O. Rader
Abstract:
Ferromagnetic topological insulators exhibit the quantum anomalous Hall effect that might be used for high precision metrology and edge channel spintronics. In conjunction with superconductors, they could host chiral Majorana zero modes which are among the contenders for the realization of topological qubits. Recently, it was discovered that the stable 2+ state of Mn enables the formation of intri…
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Ferromagnetic topological insulators exhibit the quantum anomalous Hall effect that might be used for high precision metrology and edge channel spintronics. In conjunction with superconductors, they could host chiral Majorana zero modes which are among the contenders for the realization of topological qubits. Recently, it was discovered that the stable 2+ state of Mn enables the formation of intrinsic magnetic topological insulators with A1B2C4 stoichiometry. However, the first representative, MnBi2Te4, is antiferromagnetic with 25 K Néel temperature and strongly n-doped. Here, we show that p-type MnSb2Te4, previously considered topologically trivial, is a ferromagnetic topological insulator in the case of a few percent of Mn excess. It shows (i) a ferromagnetic hysteresis with record high Curie temperature of 45-50 K, (ii) out-of-plane magnetic anisotropy and (iii) a two-dimensional Dirac cone with the Dirac point close to the Fermi level which features (iv) out-of-plane spin polarization as revealed by photoelectron spectroscopy and (v) a magnetically induced band gap that closes at the Curie temperature as demonstrated by scanning tunneling spectroscopy. Moreover, it displays (vi) a critical exponent of magnetization beta~1, indicating the vicinity of a quantum critical point. Ab initio band structure calculations reveal that the slight excess of Mn that substitutionally replaces Sb atoms provides the ferromagnetic interlayer coupling. Remaining deviations from the ferromagnetic order, likely related to this substitution, open the inverted bulk band gap and render MnSb2Te4 a robust topological insulator and new benchmark for magnetic topological insulators.
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Submitted 25 April, 2021; v1 submitted 13 November, 2020;
originally announced November 2020.
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Trajectory-dependent electronic excitations by light and heavy ions around and below the Bohr velocity
Authors:
Svenja Lohmann,
Radek Holeňák,
Daniel Primetzhofer
Abstract:
We present experiments demonstrating trajectory-dependent electronic excitations at low ion velocities, where ions are expected to primarily interact with delocalized valence electrons. The energy loss of H$^+$, H$_2 ^+$, He$^+$, B$^+$, N$^+$, Ne$^+$, $^{28/29}$Si$^+$ and Ar$^+$ in self-supporting silicon membranes was analysed along channelled and random trajectories in a transmission approach. F…
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We present experiments demonstrating trajectory-dependent electronic excitations at low ion velocities, where ions are expected to primarily interact with delocalized valence electrons. The energy loss of H$^+$, H$_2 ^+$, He$^+$, B$^+$, N$^+$, Ne$^+$, $^{28/29}$Si$^+$ and Ar$^+$ in self-supporting silicon membranes was analysed along channelled and random trajectories in a transmission approach. For all ions, we observe a difference in electronic stop** dependent on crystal orientation. For heavier ions, the energy-loss difference between channelling and random geometry is generally found more pronounced, and, in contrast to protons, increases for decreasing ion energy. Due to the inefficiency of core-electron excitations at employed ion velocities, we explain these results by reionization events occurring in close collisions of ions with target atoms, which are heavily suppressed for channelled trajectories. These processes result in trajectory-dependent mean charge states, which strongly affects the energy loss. The strength of the effect seems to exhibit a Z$_1$ oscillation with an observed minimum for Ne. We, furthermore, demonstrate that the simplicity of our experimental geometry leads to results that can serve as excellent benchmark systems for dynamic calculations of the electronic systems of solids using time-dependent density functional theory.
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Submitted 15 September, 2020;
originally announced September 2020.
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Unprecedented Severe Atomic Redistribution in Germanium Induced by MeV Self-Irradiation
Authors:
Tuan T. Tran,
Daniel Primetzhofer
Abstract:
We present a pronounced unprecedented surface modification of a crystalline Ge layer under heavy ion irradiation with a Ge ion beam at high energy of 2.5 MeV. Under the irradiation conditions, the Ge layer did not become porous as observed for other projectiles and lower energies but develops into an uneven ripple morphology in which the roughness monotonically increases with the irradiation doses…
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We present a pronounced unprecedented surface modification of a crystalline Ge layer under heavy ion irradiation with a Ge ion beam at high energy of 2.5 MeV. Under the irradiation conditions, the Ge layer did not become porous as observed for other projectiles and lower energies but develops into an uneven ripple morphology in which the roughness monotonically increases with the irradiation doses. We show that this phenomenon is caused neither by surface erosion effect nor by a non-uniform volumetric expansion. Rather, atomic redistribution in the bulk of the material is the only drive for the ripple surface. Furthermore, the deformation of the Ge layer likely occurs to largest extend after irradiation, as indicated by the very flat interface around the end-of-range region. The observed morphology modification is discussed based on irradiation-induced plastic flow, coupled with a larger contribution of the electronic component in the ion-solid interactions.
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Submitted 19 August, 2020;
originally announced August 2020.
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In-situ Nanoscale Characterization of Composition and Structure during Formation of Ultrathin Nickel Silicide
Authors:
Tuan T. Tran,
Christian Lavoie,
Zhen Zhang,
Daniel Primetzhofer
Abstract:
We characterize composition and structure of ultrathin nickel silicide during formation from 3 nm Ni films on Si(100) using in-situ high resolution ion scattering and high resolution transmission electron microscopy. We show the transition to occur in discrete steps, in which an intermediate phase is observed within a narrow range of temperature from 230 oC to 290 oC. The film composition of this…
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We characterize composition and structure of ultrathin nickel silicide during formation from 3 nm Ni films on Si(100) using in-situ high resolution ion scattering and high resolution transmission electron microscopy. We show the transition to occur in discrete steps, in which an intermediate phase is observed within a narrow range of temperature from 230 oC to 290 oC. The film composition of this intermediate phase is found to be 50% Ni:50% Si, without evidence for long-range structure, indicating the film to be a homogeneous monosilicide NiSi phase. The final phase is resemblant of the cubic disilicide NiSi2, but with slightly off-stoichiometric composition of 38% Ni and 62% Si. Along the [100] axis, the lattices of the film and the substrate are found in perfect alignment. Due to the epitaxial growth of the silicide, a contraction of the c lattice constant of the film by 0.7-1% is detected.
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Submitted 22 June, 2020;
originally announced June 2020.
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Impact of the experimental approach on the observed electronic energy loss for light keV ions in thin self-supporting films
Authors:
Barbara Bruckner,
Philipp M. Wolf,
Peter Bauer,
Daniel Primetzhofer
Abstract:
Energy spectra of backscattered and transmitted ions with primary energies of 50 keV and 100 keV interacting with self-supporting foils were recorded with a Time-of-Flight Medium-Energy Ion Scattering setup in a single experiment. Self-supporting Au and W foils without backing material were used. For He ions transmitted through Au the spectrum of detected particles shows two distinct components co…
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Energy spectra of backscattered and transmitted ions with primary energies of 50 keV and 100 keV interacting with self-supporting foils were recorded with a Time-of-Flight Medium-Energy Ion Scattering setup in a single experiment. Self-supporting Au and W foils without backing material were used. For He ions transmitted through Au the spectrum of detected particles shows two distinct components corresponding to different energy losses in the film, whereas for protons no such phenomenon was observed. To determine the origin of these different contributions, measurements for different angles of incidence and scattering angles have been evaluated. The results suggest that the two components in the spectrum of transmitted He ions could be attributed to impact parameter dependent energy loss, being more prominent for He ions than for protons. The main origin of the necessary impact parameter selection along the different ion trajectories is expected to be texture in the Au-foils.
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Submitted 6 May, 2020;
originally announced May 2020.
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Contrast modes in a 3D ion transmission approach at keV energies
Authors:
R. Holeňák,
S. Lohmann,
D. Primetzhofer
Abstract:
We present options for visualizing contrast maps in 3D ion transmission experiments. Simultaneous measurement of angular distributions and flight time of ions transmitted through self-supporting, single-crystalline silicon foils allows for map** of intensity and different energy loss moments. The transmitted projectiles were detected mainly for random beam-sample orientation using pulsed beams o…
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We present options for visualizing contrast maps in 3D ion transmission experiments. Simultaneous measurement of angular distributions and flight time of ions transmitted through self-supporting, single-crystalline silicon foils allows for map** of intensity and different energy loss moments. The transmitted projectiles were detected mainly for random beam-sample orientation using pulsed beams of He ions and protons with incident energies 50 and 200 keV. Differences in contrast, observed when varying the projectile type and energy, can be attributed to sample nuclear and electronic structure and bear witness to impact parameter dependent energy loss processes. Our results provide a base for interpretation of data obtained in prospective transmission studies when for example using a helium ion microscope.
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Submitted 17 April, 2020;
originally announced April 2020.
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Correlating chemical composition and optical properties of photochromic rare-earth oxy-hydrides using ion beam analysis
Authors:
S. M. Aðalsteinsson,
M. V. Moro,
D. Moldarev,
S. Droulias,
M. Wolff,
D. Primetzhofer
Abstract:
We relate the photochromic response of rare-earth oxy-hydride thin films (YHO, NdHO, GdHO and DyHO) synthesized by reactive magnetron sputtering to chemical composition. Depth profiles of the sample composition are extracted by a multi-method ion beam analysis approach. The total areal density of the thin films is deduced from Rutherford Backscattering Spectrometry while coincidence Time-of-Flight…
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We relate the photochromic response of rare-earth oxy-hydride thin films (YHO, NdHO, GdHO and DyHO) synthesized by reactive magnetron sputtering to chemical composition. Depth profiles of the sample composition are extracted by a multi-method ion beam analysis approach. The total areal density of the thin films is deduced from Rutherford Backscattering Spectrometry while coincidence Time-of-Flight/Energy Elastic Recoil Detection Analysis provides depth-profiles of the film constituents. High-resolution depth profiles of the concentration of light species, i.e. hydrogen and oxygen, are additionally extracted from Nuclear Reaction Analysis and Elastic Backscattering Spectrometry, respectively. The photochromic response of the films is measured by optical transmission spectroscopy before and after illumination. We report photochromic properties for YHO, NdHO, GdHO and DyHO for chemical compositions described by the formula $REH_{2-δ}O_δ$ in the range of $0.45 {<} δ {<} 1.5$.
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Submitted 15 April, 2020;
originally announced April 2020.
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Synthesis and $\textit{in-situ}$ characterization of photochromic yttrium oxyhydride grown by reactive $e^-$-beam evaporation
Authors:
K. Kantre,
M. V. Moro,
D. Moldarev,
M. Wolff,
D. Primetzhofer
Abstract:
We report on controlled growth of photochromic yttrium oxyhydride thin films monitored by $\textit{in-situ}$ composition depth profiling. Films were grown by reactive $e^-$-beam evaporation and subsequently oxidized, while simultaneously tracking the oxygen and hydrogen concentrations. Sample composition and photochromic response were characterized $\textit{in-situ}$ using non destructive ion beam…
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We report on controlled growth of photochromic yttrium oxyhydride thin films monitored by $\textit{in-situ}$ composition depth profiling. Films were grown by reactive $e^-$-beam evaporation and subsequently oxidized, while simultaneously tracking the oxygen and hydrogen concentrations. Sample composition and photochromic response were characterized $\textit{in-situ}$ using non destructive ion beam analysis and image analysis, respectively - as well as complementary $\textit{ex-situ}$ ion beam methods, X-ray diffraction and optical spectrophotometry. We show that photochromic yttrium oxyhydride can be grown as yttrium dihydride, which is then oxidized to O/H ratios triggering the photochromic response.
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Submitted 9 June, 2020; v1 submitted 2 April, 2020;
originally announced April 2020.
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Assessing electron emission induced by pulsed ion beams: a time-of-flight approach
Authors:
Svenja Lohmann,
Anna Niggas,
Vincent Charnay,
Radek Holeňák,
Daniel Primetzhofer
Abstract:
We present a method to measure the kinetic energy of electrons emitted upon ion impact via their time-of-flight. Pulsed beams of H$^{+}$, D$_2^{+}$, He$^{+}$ and Ne$^{+}$ ions with velocities between 0.4 and 3.5 a.u. are transmitted through thin, self-supporting carbon and gold foils. Transmitted ions and secondary electrons are detected with a position-sensitive detector behind the sample and the…
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We present a method to measure the kinetic energy of electrons emitted upon ion impact via their time-of-flight. Pulsed beams of H$^{+}$, D$_2^{+}$, He$^{+}$ and Ne$^{+}$ ions with velocities between 0.4 and 3.5 a.u. are transmitted through thin, self-supporting carbon and gold foils. Transmitted ions and secondary electrons are detected with a position-sensitive detector behind the sample and their respective energies are determined via their flight times. A coincidence criterium can be applied in the acquisition software. Measured electron energies range between 10 and 400 eV. Above ion velocities of 1 a.u. the most probable electron energy scales with ion velocity pointing towards a kinetic emission mechanism. At lower ion velocities, the electron energy stays constant and lies above the maximum energy transfer possible in a classical binary collision between ion and electron. Potential applications and technical challenges of measuring electron energies and yields with a time-of-flight approach are discussed.
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Submitted 16 March, 2020;
originally announced March 2020.
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Tailoring magnetic order via atomically stacking 3d/5d electrons
Authors:
Ke Huang,
Liang Wu,
Maoyu Wang,
Nyayabanta Swain,
M. Motapothula,
Yongzheng Luo,
Kun Han,
Mingfeng Chen,
Chen Ye,
Allen Jian Yang,
Huan Xu,
Dong-chen Qi,
Alpha T. N'Diaye,
Christos Panagopoulos,
Daniel Primetzhofer,
Lei Shen,
Pinaki Sengupta,
**g Ma,
Zhenxing Feng,
Ce-Wen Nan,
X. Renshaw Wang
Abstract:
The ability to tune magnetic orders, such as magnetic anisotropy and topological spin texture, is desired in order to achieve high-performance spintronic devices. A recent strategy has been to employ interfacial engineering techniques, such as the introduction of spin-correlated interfacial coupling, to tailor magnetic orders and achieve novel magnetic properties. We chose a unique polar-nonpolar…
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The ability to tune magnetic orders, such as magnetic anisotropy and topological spin texture, is desired in order to achieve high-performance spintronic devices. A recent strategy has been to employ interfacial engineering techniques, such as the introduction of spin-correlated interfacial coupling, to tailor magnetic orders and achieve novel magnetic properties. We chose a unique polar-nonpolar LaMnO3/SrIrO3 superlattice because Mn (3d)/Ir (5d) oxides exhibit rich magnetic behaviors and strong spin-orbit coupling through the entanglement of their 3d and 5d electrons. Through magnetization and magnetotransport measurements, we found that the magnetic order is interface-dominated as the superlattice period is decreased. We were able to then effectively modify the magnetization, tilt of the ferromagnetic easy axis, and symmetry transition of the anisotropic magnetoresistance of the LaMnO3/SrIrO3 superlattice by introducing additional Mn (3d) and Ir (5d) interfaces. Further investigations using in-depth first-principles calculations and numerical simulations revealed that these magnetic behaviors could be understood by the 3d/5d electron correlation and Rashba spin-orbit coupling. The results reported here demonstrate a new route to synchronously engineer magnetic properties through the atomic stacking of different electrons, contributing to future applications.
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Submitted 14 September, 2021; v1 submitted 16 January, 2020;
originally announced January 2020.
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In-situ characterization of ultrathin nickel silicides using 3D medium-energy ion scattering
Authors:
Tuan Thien Tran,
Lukas Jablonka,
Christian Lavoie,
Zhen Zhang,
Daniel Primetzhofer
Abstract:
We demonstrate a novel approach for non-destructive in-situ characterization of phase transitions of ultrathin nickel silicide films using 3D medium-energy ion scattering. The technique provides simultaneously composition and real-space crystallography of silicide films during the annealing process using a single sample. We show, for 10 nm Ni films on Si, that their composition follows the normal…
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We demonstrate a novel approach for non-destructive in-situ characterization of phase transitions of ultrathin nickel silicide films using 3D medium-energy ion scattering. The technique provides simultaneously composition and real-space crystallography of silicide films during the annealing process using a single sample. We show, for 10 nm Ni films on Si, that their composition follows the normal transition sequence, such as Ni-Ni2Si-NiSi. For samples with initial Ni thickness of 3 nm, depth-resolved crystallography using a position-sensitive detector, shows that the Ni film transform from an as-deposited disordered layer to epitaxial silicide layers at a relatively low temperature of ~290 °C.
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Submitted 21 October, 2019;
originally announced October 2019.
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Electronic excitation of transition metal nitrides by light ions with keV energies
Authors:
Barbara Bruckner,
Marcus Hans,
Tomas Nyberg,
Grzegorz Greczynski,
Peter Bauer,
Daniel Primetzhofer
Abstract:
We investigated the specific electronic energy deposition by protons and He ions with keV energies in different transition metal nitrides of technological interest. Data were obtained from two different time-of-flight ion scattering setups and show excellent agreement. For protons interacting with light nitrides, i.e. TiN, VN and CrN, very similar stop** cross sections per atom were found, which…
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We investigated the specific electronic energy deposition by protons and He ions with keV energies in different transition metal nitrides of technological interest. Data were obtained from two different time-of-flight ion scattering setups and show excellent agreement. For protons interacting with light nitrides, i.e. TiN, VN and CrN, very similar stop** cross sections per atom were found, which coincide with literature data of N2 gas for primary energies <= 25 keV. In case of the chemically rather similar nitrides with metal constituents from the 5th and 6th period, i.e. ZrN and HfN, the electronic stop** cross sections were measured to exceed what has been observed for molecular N2 gas. For He ions, electronic energy loss in all nitrides was found to be significantly higher compared to the equivalent data of N2 gas. Additionally, deviations from velocity proportionality of the observed specific electronic energy loss are observed. A comparison with predictions from density functional theory for protons and He ions yields a high apparent efficiency of electronic excitations of the target for the latter projectile. These findings are considered to indicate the contributions of additional mechanisms besides electron hole pair excitations, such as electron capture and loss processes of the projectile or promotion of target electrons in atomic collisions.
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Submitted 23 January, 2020; v1 submitted 13 September, 2019;
originally announced September 2019.
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Influence of structure and cation distribution on magnetic anisotropy and dam** in Zn/Al doped nickel ferrites
Authors:
Julia Lumetzberger,
Martin Buchner,
Santa Pile,
Verena Ney,
Wolfgang Gaderbauer,
Niéli Daffé,
Marcos V. Moro,
Daniel Primetzhofer,
Kilian Lenz,
Andreas Ney
Abstract:
An in-depth analysis of Zn/Al doped nickel ferrites grown by reactive magnetron sputtering is relevant due to their promising characteristics for applications in spintronics. The material is insulating and ferromagnetic at room temperature with an additional low magnetic dam**. By studying the complex interplay between strain and cation distribution their impact on the magnetic properties, i.e.…
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An in-depth analysis of Zn/Al doped nickel ferrites grown by reactive magnetron sputtering is relevant due to their promising characteristics for applications in spintronics. The material is insulating and ferromagnetic at room temperature with an additional low magnetic dam**. By studying the complex interplay between strain and cation distribution their impact on the magnetic properties, i.e. anisotropy, dam** and g-factor is unravelled. In particular, a strong influence of the lattice site occupation of Ni$^{2+}_{\text{Td}}$ and cation coordination of Fe$^{2+}_{\text{Oh}}$ on the intrinsic dam** is found. Furthermore, the critical role of the incorporation of Zn$^{2+}$ and Al$^{3+}$ is evidenced by comparison with a sample of altered composition. Especially, the dopant Zn$^{2+}$ is evidenced as a tuning factor for Ni$^{2+}_{\text{Td}}$ and therefore unquenched orbital moments directly controlling the g-factor. A strain-independent reduction of the magnetic anisotropy and dam** by adapting the cation distribution is demonstrated.
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Submitted 7 April, 2020; v1 submitted 22 August, 2019;
originally announced August 2019.
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Electronic interaction of slow hydrogen and helium ions in the nickel-silicon system
Authors:
Tuan Thien Tran,
Lukas Jablonka,
Barbara Bruckner,
Stefanie Rund,
Dietmar Roth,
Mauricio A. Sortica,
Peter Bauer,
Zhen Zhang,
Daniel Primetzhofer
Abstract:
Electronic stop** cross sections (SCS) of nickel, silicon and nickel-silicon alloys for protons and helium (He) ions are studied in the regime of medium and low energy ion scattering, i.e., for ion energies in the range from 500 eV to 200 keV. For protons, at velocities below the Bohr velocity the deduced SCS is proportional to the ion velocity for all investigated materials. In contrast, for He…
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Electronic stop** cross sections (SCS) of nickel, silicon and nickel-silicon alloys for protons and helium (He) ions are studied in the regime of medium and low energy ion scattering, i.e., for ion energies in the range from 500 eV to 200 keV. For protons, at velocities below the Bohr velocity the deduced SCS is proportional to the ion velocity for all investigated materials. In contrast, for He ions non-linear velocity scaling is observed in all investigated materials. Static calculations using density functional theory (DFT) available from literature accurately predict the SCS of Ni and Ni-Si alloy in the regime with observed velocity proportionality. At higher energies, the energy dependence of the deduced SCS of Ni for protons and He ions agrees with the prediction by recent time dependent DFT calculations. The measured SCS of the Ni-Si alloy was compared to the SCS obtained from Bragg's rule based on SCS for Ni and Si deduced in this study, yielding good agreement for protons, but systematic deviations for He projectiles, by almost 20%. Overall, the obtained data indicate the importance of non adiabatic processes such as charge exchange for proper modelling of electronic stop** of in particular medium energy ions heavier than protons in solids.
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Submitted 21 August, 2019;
originally announced August 2019.
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On the influence of uncertainties in scattering potentials on quantitative analysis using keV ions
Authors:
Barbara Bruckner,
Tomas Strapko,
Mauricio A. Sortica,
Peter Bauer,
Daniel Primetzhofer
Abstract:
Experimental spectra from medium energy ion scattering were compared to Monte-Carlo simulations (employing the TRBS code) to obtain information on the scattering potential. The impact of uncertainties in the interatomic potential on quantification of sample properties such as thickness, composition or electronic stop** was investigated for different scattering geometries: backscattering and tran…
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Experimental spectra from medium energy ion scattering were compared to Monte-Carlo simulations (employing the TRBS code) to obtain information on the scattering potential. The impact of uncertainties in the interatomic potential on quantification of sample properties such as thickness, composition or electronic stop** was investigated for different scattering geometries: backscattering and transmission. For backscattered He ions with tens of keV primary energy the scattering potential was found to overestimate the multiple scattering background in the energy spectra resulting in an uncertainty of < 3 % in quantitative analysis. Light ions transmitted through a sample for equivalent path length in the medium are only affected minorly by changes in the scattering potential. This effect becomes more distinct for heavier primary ions.
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Submitted 6 August, 2019;
originally announced August 2019.
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Neutralization of slow helium ions scattered from single crystalline aluminum and tantalum surfaces and their oxides
Authors:
Barbara Bruckner,
Peter Bauer,
Daniel Primetzhofer
Abstract:
We investigated the impact of surface oxygen on the ion yield for He$^+$ ions scattered from different single crystalline surfaces in low-energy ion scattering. Initially clean Al(111) and Ta(111) were exposed to molecular oxygen and ion spectra for different oxidation stages and different primary energies were recorded. A comparison of ion yields normalized to the differential scattering cross se…
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We investigated the impact of surface oxygen on the ion yield for He$^+$ ions scattered from different single crystalline surfaces in low-energy ion scattering. Initially clean Al(111) and Ta(111) were exposed to molecular oxygen and ion spectra for different oxidation stages and different primary energies were recorded. A comparison of ion yields normalized to the differential scattering cross section as well as experimental factors allows obtaining information about the influence of oxygen on charge exchange processes. The decrease in the ion yield of both metals with exposure cannot be explained by different surface coverages exclusively, but requires the neutralization efficiency to be dependent on the chemical structure of the surface. For Ta, additionally, a different energy dependency of the ion yield obtained in the metal and oxide occurs. The ion yield for O shows in both surfaces a significantly weaker energy dependency than the investigated metals.
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Submitted 5 August, 2019;
originally announced August 2019.
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Disparate energy scaling of trajectory-dependent electronic excitations for slow protons and He ions
Authors:
Svenja Lohmann,
Daniel Primetzhofer
Abstract:
We have simultaneously measured angular distributions and electronic energy loss of helium ions and protons directly transmitted through self-supporting, single-crystalline silicon foils. We have compared the energy loss along channelled and random trajectories for incident ion energies between 50 keV and 200 keV. For all studied cases the energy loss in channelling geometry is found lower than in…
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We have simultaneously measured angular distributions and electronic energy loss of helium ions and protons directly transmitted through self-supporting, single-crystalline silicon foils. We have compared the energy loss along channelled and random trajectories for incident ion energies between 50 keV and 200 keV. For all studied cases the energy loss in channelling geometry is found lower than in random geometry. In the case of protons, this difference increases with initial ion energy. This behaviour can be explained by the increasing contribution of excitations of core electrons, which are more likely to happen at small impact parameters accessible only in random geometry. For helium ions we observe a reverse trend - a decrease of the difference between channelled and random energy loss for increasing ion energy. Due to the inefficiency of core-electron excitations even at small impact parameters at such low energies, another mechanism has to be the cause for the observed difference. We provide evidence that the observation originates from reionisation events induced by close collisions of helium ions occurring only along random trajectories.
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Submitted 3 February, 2020; v1 submitted 19 July, 2019;
originally announced July 2019.
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Phase composition and transformations in magnetron-sputtered (Al,V)2O3 coatings
Authors:
L. Landälv,
C-F. Carlström,
J. Lu,
Daniel Primetzhofer,
M. J. Jõesaar,
M. Ahlgren,
E. Göthelid,
B. Alling,
L. Hultman,
P. Eklund
Abstract:
Coatings of (Al1-xVx)2O3, with x ranging from 0 to 1, were deposited by pulsed DC reactive sputter deposition on Si(100) at a temperature of 550 °C. XRD showed three different crystal structures depending on V-metal fraction in the coating: α-V2O3 rhombohedral structure for 100 at.% V, a defect spinel structure for the intermediate region, 63 - 42 at.% V. At lower V-content, 18 and 7 at.%, a gamma…
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Coatings of (Al1-xVx)2O3, with x ranging from 0 to 1, were deposited by pulsed DC reactive sputter deposition on Si(100) at a temperature of 550 °C. XRD showed three different crystal structures depending on V-metal fraction in the coating: α-V2O3 rhombohedral structure for 100 at.% V, a defect spinel structure for the intermediate region, 63 - 42 at.% V. At lower V-content, 18 and 7 at.%, a gamma-alumina-like solid solution was observed, shifted to larger d-spacing compared to pure γ-Al2O3. The microstructure changes from large columnar faceted grains for α-V2O3 to smaller equiaxed grains when lowering the vanadium content toward pure γ-Al2O3. Annealing in air resulted in formation of V2O5 crystals on the surface of the coating after annealing to 500 °C for 42 at.% V and 700 °C for 18 at.% V metal fraction respectively. The highest thermal stability was shown for pure γ-Al2O3-coating, which transformed to α-Al2O3 after annealing to 1100° C. Highest hardness was observed for the Al-rich oxides, ~24 GPa. The latter decreased with increasing V-content, larger than 7 at.% V metal fraction. The measured hardness after annealing in air decreased in conjunction with the onset of further oxidation of the coatings.
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Submitted 20 August, 2019; v1 submitted 16 May, 2019;
originally announced May 2019.
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Enhanced Gilbert Dam** in Re doped FeCo Films: A Combined Experimental and Theoretical Study
Authors:
Serkan Akansel,
Ankit Kumar,
Vijayahahan A. Venugopal,
Rudra Banerjee,
Carmine Autieri,
Rimantas Brucas,
Nilamani Behera,
Mauricio A. Sortica,
Daniel Primetzhofer,
Swaraj Basu,
Mark A. Gubbins,
Biplab Sanyal,
Peter Svedlindh
Abstract:
The effects of rhenium do** in the range 0 to 10 atomic percent on the static and dynamic magnetic properties of Fe65Co35 thin films have been studied experimentally as well as with first principles electronic structure calculations focusing on the change of the saturation magnetization and the Gilbert dam** parameter. Both experimental and theoretical results show that the saturation magnetiz…
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The effects of rhenium do** in the range 0 to 10 atomic percent on the static and dynamic magnetic properties of Fe65Co35 thin films have been studied experimentally as well as with first principles electronic structure calculations focusing on the change of the saturation magnetization and the Gilbert dam** parameter. Both experimental and theoretical results show that the saturation magnetization decreases with increasing Re do** level, while at the same time Gilbert dam** parameter increases. The experimental low temperature saturation magnetic induction exhibits a 29 percent decrease, from 2.31 T to 1.64 T, in the investigated do** concentration range, which is more than predicted by the theoretical calculations. The room temperature value of the dam** parameter obtained from ferromagnetic resonance measurements, correcting for extrinsic contributions to the dam**, is for the undoped sample 0.0027, which is close to the theoretically calculated Gilbert dam** parameter. With 10 atomic percent Re do**, the dam** parameter increases to 0.0090, which is in good agreement with the theoretical value of 0.0073. The increase in dam** parameter with Re do** is explained by the increase in density of states at Fermi level, mostly contributed by the spin-up channel of Re. Moreover, both experimental and theoretical values for the dam** parameter are observed to be weakly decreasing with decreasing temperature.
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Submitted 26 February, 2019;
originally announced February 2019.
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Accurate high-resolution depth profiling of magnetron sputtered transition metal alloy films containing light species: A multi-method approach
Authors:
M. V. Moro,
R. Holeňák,
L. Zendejas Medina,
U. Jansson,
D. Primetzhofer
Abstract:
We present an assessment of a multi-method approach based on ion beam analysis to obtain high-resolution depth profiles of the total chemical composition of complex alloy systems. As a model system we employ an alloy based on several transition metals and containing light species. Samples have been investigated by a number of different ion-beam based techniques, i.e., Rutherford Backscattering Spe…
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We present an assessment of a multi-method approach based on ion beam analysis to obtain high-resolution depth profiles of the total chemical composition of complex alloy systems. As a model system we employ an alloy based on several transition metals and containing light species. Samples have been investigated by a number of different ion-beam based techniques, i.e., Rutherford Backscattering Spectrometry, Particle-Induced X-ray Emission, Elastic Backscattering Spectrometry and Time-of-Flight/Energy Elastic Recoil Detection Analysis. Sets of spectra obtained from these different techniques were analyzed both independently and following an iterative and self-consistent approach yielding a more accurate depth profile of the sample, including both metallic heavy constituents (Cr, Fe and Ni) as well as the rather reactive light species (C, O) in the alloy. A quantitative comparison in terms of achievable precision and accuracy is made and the limitations of the single method approach are discussed for the different techniques. The multi-method approach is shown to yield significantly improved and accurate information on stoichiometry, depth distribution, and thickness of the alloy with the improvements being decisive for a detailed correlation of composition to the material properties such as corrosion strength. The study also shows the increased relative importance of experimental statistics for the achievable accuracy in the multi-method approach.
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Submitted 12 July, 2019; v1 submitted 26 December, 2018;
originally announced December 2018.
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Exchange dependent ultrafast magnetization dynamics in Fe$_{1-x}$Ni$_{x}$ alloys
Authors:
Somnath Jana,
Ronny Knut,
Erna K. Delczeg-Czirjak,
Rameez S. Malik,
Robert Stefanuik,
Raghuveer Chimata,
Dibya Phuyal,
Venkata Mutta,
Serkan Akansel,
Daniel Primetzhofer,
Martina Ahlberg,
Johan Söderström,
Johan Åkerman,
Peter Svedlindh,
Olle Eriksson,
Olof Karis
Abstract:
Element specific ultrafast demagnetization was studied in Fe$_{1-x}$Ni$_{x}$ alloys, covering the concentration range between $0.1<x<0.9$. For all compositions, we observe a delay in the onset of Ni demagnetization relative to the Fe demagnetization. We find that the delay is correlated to the Curie temperature and hence also the exchange interaction. The temporal evolution of demagnetization is f…
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Element specific ultrafast demagnetization was studied in Fe$_{1-x}$Ni$_{x}$ alloys, covering the concentration range between $0.1<x<0.9$. For all compositions, we observe a delay in the onset of Ni demagnetization relative to the Fe demagnetization. We find that the delay is correlated to the Curie temperature and hence also the exchange interaction. The temporal evolution of demagnetization is fitted to a magnon diffusion model based on the presupposition of enhanced ultrafast magnon generation in the Fe sublattice. The spin wave stiffness extracted from this model correspond well to known experimental values.
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Submitted 25 October, 2018;
originally announced October 2018.
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Electronic Stop** of Slow Protons in Oxides: Scaling Properties
Authors:
D. Roth,
B. Bruckner,
G. Undeutsch,
V. Paneta,
A. I. Mardare,
C. L. McGahan,
M. Dosmailov,
J. I. Juaristi,
M. Alducin,
J. D. Pedarnig,
R. F. Haglund, Jr.,
D. Primetzhofer,
P. Bauer
Abstract:
Electronic stop** of slow protons in ZnO, VO2 (metal and semiconductor phases), HfO2, and Ta2O5 was investigated experimentally. As a comparison of the resulting stop** cross sections (SCS) to data for Al2O3 and SiO2 reveals, electronic stop** of slow protons does not correlate with electronic properties of the specific material such as band gap energies. Instead, the oxygen 2p states are de…
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Electronic stop** of slow protons in ZnO, VO2 (metal and semiconductor phases), HfO2, and Ta2O5 was investigated experimentally. As a comparison of the resulting stop** cross sections (SCS) to data for Al2O3 and SiO2 reveals, electronic stop** of slow protons does not correlate with electronic properties of the specific material such as band gap energies. Instead, the oxygen 2p states are decisive, as corroborated by density functional theory calculations of the electronic densities of states. Hence, at low ion velocities the SCS of an oxide primarily scales with its oxygen density.
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Submitted 22 October, 2017;
originally announced October 2017.
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Electronic Stop** of Slow Protons in Transition and Rare Earth Metals: Breakdown of the Free Electron Gas Concept
Authors:
D. Roth,
B. Bruckner,
M. V. Moro,
S. Gruber,
D. Goebl,
J. I. Juaristi,
M. Alducin,
R. Steinberger,
J. Duchoslav,
D. Primetzhofer,
P. Bauer
Abstract:
The electronic stop** cross sections (SCS) of Ta and Gd for slow protons have been investigated experimentally. The data are compared to the results for Pt and Au to learn how electronic stop** in transition and rare earth metals correlates with features of the electronic band structures. The extraordinarily high SCS observed for protons in Ta and Gd cannot be understood in terms of a free ele…
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The electronic stop** cross sections (SCS) of Ta and Gd for slow protons have been investigated experimentally. The data are compared to the results for Pt and Au to learn how electronic stop** in transition and rare earth metals correlates with features of the electronic band structures. The extraordinarily high SCS observed for protons in Ta and Gd cannot be understood in terms of a free electron gas model, but are related to the high densities of both occupied and unoccupied electronic states in these metals.
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Submitted 9 March, 2017;
originally announced March 2017.
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The potential of Rutherford Backscattering Spectrometry for composition analysis of colloidal nanocrystals
Authors:
Daniel Primetzhofer,
Mikhailo Sytnyk,
Paul Joachim Wagner,
Peter Bauer,
Wolfgang Heiss
Abstract:
We investigate the potential of elastic scattering of energetic ions for compositional analysis of magnetic colloidal nanocrystals. Thin layers of nanocrystals deposited by spin coating on Si-wafers are investigated by two different set-ups for Rutherford Backscattering Spectrometry (RBS), employing different projectile ions (4He, 12C) and primary energies (600 keV - 8 MeV). The advantages and dis…
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We investigate the potential of elastic scattering of energetic ions for compositional analysis of magnetic colloidal nanocrystals. Thin layers of nanocrystals deposited by spin coating on Si-wafers are investigated by two different set-ups for Rutherford Backscattering Spectrometry (RBS), employing different projectile ions (4He, 12C) and primary energies (600 keV - 8 MeV). The advantages and disadvantages of the different approaches are discussed in terms of obtainable mass resolution, necessary primary particle fluence and deposited energy. It is shown that different isotopes of transition metals can be resolved by employing 8 MeV 12C3+ primary ions.
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Submitted 27 November, 2013;
originally announced November 2013.
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Ultra-thin film and interface analysis of high-k dielectric materials employing Time-Of-Flight Medium Energy Ion Scattering (TOF-MEIS)
Authors:
Daniel Primetzhofer,
Eugenio Dentoni Litta,
Anders Hallén,
Margareta K. Linnarsson,
Göran Possnert
Abstract:
We explore the potential of Time-Of-Flight Medium Energy Ion Scattering (TOFMEIS) for thin film analysis and analyze possible difficulties in evaluation of experimental spectra. Issues regarding different combinations of composition and stop** power as well as the influence of channeling are discussed. As a model system high-k material stacks made from ultra-thin films of HfO2 grown on a p-type…
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We explore the potential of Time-Of-Flight Medium Energy Ion Scattering (TOFMEIS) for thin film analysis and analyze possible difficulties in evaluation of experimental spectra. Issues regarding different combinations of composition and stop** power as well as the influence of channeling are discussed. As a model system high-k material stacks made from ultra-thin films of HfO2 grown on a p-type Si (100) substrate with a 0.5 nm SiO2 interface layer have been investigated. By comparison of experimental spectra and computer simulations TOF-MEIS was employed to establish a depth profile of the films and thus obtaining information on stoichiometry and film quality. Nominal film thicknesses were in the range from 1.8 to 12.2 nm. As a supporting method Rutherford-Backscattering spectrometry (RBS) was employed to obtain the areal density of Hf atoms in the films.
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Submitted 3 September, 2013;
originally announced September 2013.
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Electronic stop** power of hydrogen in a high-k material at the stop** maximum and below
Authors:
Daniel Primetzhofer
Abstract:
Electronic energy loss of hydrogen ions in HfO2 was investigated in a wide energy range in the medium and low energy ion scattering regime. Experiments by Time-Of-Flight Medium-Energy Ion Scattering (TOF-MEIS) with proton and deuteron projectiles were performed in backscattering geometry for nm-films of HfO2 on Si with an ultrathin SiO2 interface layer prepared by ALD. At energies around the stopp…
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Electronic energy loss of hydrogen ions in HfO2 was investigated in a wide energy range in the medium and low energy ion scattering regime. Experiments by Time-Of-Flight Medium-Energy Ion Scattering (TOF-MEIS) with proton and deuteron projectiles were performed in backscattering geometry for nm-films of HfO2 on Si with an ultrathin SiO2 interface layer prepared by ALD. At energies around the stop** maximum excellent agreement is found with earlier results from Behar et al. (Phys. Rev. A 80 (2009) 062901) and theoretical predictions. Towards lower energies discrepancies between experiment and calculations increase slightly. The low energy data exhibits excellent velocity proportionality and indicates the absence of clear effects due to distinct electronic states. Thus, also no apparent velocity threshold can be predicted within the experiments uncertainty from the present data. The magnitude of the energy loss is discussed in terms of a free-electron model and compared with the expected electron densities from plasmon frequencies.
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Submitted 2 August, 2013;
originally announced August 2013.
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Quasi-resonant neutralization of He+ ions at a germanium surface
Authors:
D. Goebl,
D. Roth,
D. Primetzhofer,
R. C. Monreal,
E. Abad,
A. Putz,
P. Bauer
Abstract:
When low-energy He ions are scattered from a Ge surface, the fraction of positive ions exhibits characteristic oscillations as a function of ion energy. These oscillations are caused by quasi-resonant neutralization (qRN), a process which can be observed for materials with a narrow band nearly resonant with the unperturbed He-1s level. In the present manuscript, we employ recently developed theore…
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When low-energy He ions are scattered from a Ge surface, the fraction of positive ions exhibits characteristic oscillations as a function of ion energy. These oscillations are caused by quasi-resonant neutralization (qRN), a process which can be observed for materials with a narrow band nearly resonant with the unperturbed He-1s level. In the present manuscript, we employ recently developed theoretical methods to extract quantitative information on the efficiency of qRN. Our evaluation reveals that qRN is a highly efficient process leading to ion fractions two orders of magnitude lower than in systems for which neutralization is only due to Auger processes.
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Submitted 22 November, 2013; v1 submitted 11 July, 2013;
originally announced July 2013.