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Evidence for $π$-shifted Cooper quartets and few-mode transport in PbTe nanowire three-terminal Josephson junctions
Authors:
Mohit Gupta,
Vipin Khade,
Colin Riggert,
Lior Shani,
Gavin Menning,
Pim Lueb,
Jason Jung,
Régis Mélin,
Erik P. A. M. Bakkers,
Vlad S. Pribiag
Abstract:
Josephson junctions are typically characterized by a single phase difference across two superconductors. This conventional two-terminal Josephson junction can be generalized to a multi-terminal device where the Josephson energy contains terms with contributions from multiple independent phase variables. Such multi-terminal Josephson junctions (MTJJs) are being considered as platforms for engineeri…
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Josephson junctions are typically characterized by a single phase difference across two superconductors. This conventional two-terminal Josephson junction can be generalized to a multi-terminal device where the Josephson energy contains terms with contributions from multiple independent phase variables. Such multi-terminal Josephson junctions (MTJJs) are being considered as platforms for engineering effective Hamiltonians with non-trivial topologies, such as Weyl crossings and higher-order Chern numbers. This approach offers unique possibilities that are complementary to phenomena attainable in bulk crystals, including topological states in more than three dimensions and real-time gate-tunability of the Hamiltonians. However, these prospects rely on the ability to create MTJJs with non-classical multi-terminal couplings in which only a handful of quantum modes are populated. Here, we demonstrate these requirements by using a three-terminal Josephson junction fabricated on selective-area-grown (SAG) PbTe nanowires. We observe signatures of a $π$-shifted Josephson effect, consistent with inter-terminal couplings mediated by four-particle quantum states called Cooper quartets. We further observe supercurrent co-existent with a non-monotonic evolution of the conductance with gate voltage, indicating transport mediated by a few quantum modes in both two- and three-terminal devices. These results establish a platform for investigations of topological Hamiltonians based on Andreev bound states.
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Submitted 22 April, 2024; v1 submitted 29 December, 2023;
originally announced December 2023.
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"Smoking gun" signatures of topological milestones in trivial materials by measurement fine-tuning and data postselection
Authors:
S. M. Frolov,
P. Zhang,
B. Zhang,
Y. Jiang,
S. Byard,
S. R. Mudi,
J. Chen,
A. -H. Chen,
M. Hocevar,
M. Gupta,
C. Riggert,
V. S. Pribiag
Abstract:
Exploring the topology of electronic bands is a way to realize new states of matter with possible implications for information technology. Because bands cannot always be observed directly, a central question is how to tell that a topological regime has been achieved. Experiments are often guided by a prediction of a unique signal or a pattern, called "the smoking gun". Examples include peaks in co…
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Exploring the topology of electronic bands is a way to realize new states of matter with possible implications for information technology. Because bands cannot always be observed directly, a central question is how to tell that a topological regime has been achieved. Experiments are often guided by a prediction of a unique signal or a pattern, called "the smoking gun". Examples include peaks in conductivity, microwave resonances, and shifts in interference fringes. However, many condensed matter experiments are performed on relatively small, micron or nanometer-scale, specimens. These structures are in the so-called mesoscopic regime, between atomic and macroscopic physics, where phenomenology is particularly rich. In this paper, we demonstrate that the trivial effects of quantum confinement, quantum interference and charge dynamics in nanostructures can reproduce accepted smoking gun signatures of triplet supercurrents, Majorana modes, topological Josephson junctions and fractionalized particles. The examples we use correspond to milestones of topological quantum computing: qubit spectroscopy, fusion and braiding. None of the samples we use are in the topological regime. The smoking gun patterns are achieved by fine-tuning during data acquisition and by subsequent data selection to pick non-representative examples out of a fluid multitude of similar patterns that do not generally fit the "smoking gun" designation. Building on this insight, we discuss ways that experimentalists can rigorously delineate between topological and non-topological effects, and the effects of fine-tuning by deeper analysis of larger volumes of data.
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Submitted 17 September, 2023;
originally announced September 2023.
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Diffusive and Ballistic Transport in Ultra-thin InSb Nanowire Devices Using a Few-layer-Graphene-AlOx Gate
Authors:
Lior Shani,
Pim Lueb,
Gavin Menning,
Mohit Gupta,
Colin Riggert,
Tyler Littman,
Frey Hackbarth,
Marco Rossi,
Jason Jung,
Ghada Badawy,
Marcel A. Verheijen,
Paul Crowell,
Erik P. A. M. Bakkers,
Vlad S. Pribiag
Abstract:
Quantum devices based on InSb nanowires (NWs) are a prime candidate system for realizing and exploring topologically-protected quantum states and for electrically-controlled spin-based qubits. The influence of disorder on achieving reliable topological regimes has been studied theoretically, highlighting the importance of optimizing both growth and nanofabrication. In this work we investigate both…
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Quantum devices based on InSb nanowires (NWs) are a prime candidate system for realizing and exploring topologically-protected quantum states and for electrically-controlled spin-based qubits. The influence of disorder on achieving reliable topological regimes has been studied theoretically, highlighting the importance of optimizing both growth and nanofabrication. In this work we investigate both aspects. We developed InSb nanowires with ultra-thin diameters, as well as a new gating approach, involving few-layer graphene (FLG) and Atomic Layer Deposition (ALD)-grown AlOx. Low-temperature electronic transport measurements of these devices reveal conductance plateaus and Fabry-Pérot interference, evidencing phase-coherent transport in the regime of few quantum modes. The approaches developed in this work could help mitigate the role of material and fabrication-induced disorder in semiconductor-based quantum devices.
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Submitted 31 May, 2023;
originally announced June 2023.
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Zero-bias conductance peaks at zero applied magnetic field due to stray fields from integrated micromagnets in hybrid nanowire quantum dots
Authors:
Y. Jiang,
M. Gupta,
C. Riggert,
M. Pendharkar,
C. Dempsey,
J. S. Lee,
S. D. Harrington,
C. J. Palmstrøm,
V. S. Pribiag,
S. M. Frolov
Abstract:
Many recipes for realizing topological superconductivity rely on broken time-reversal symmetry, which is often attained by applying a substantial external magnetic field. Alternatively, using magnetic materials can offer advantages through low-field operation and design flexibility on the nanoscale. Mechanisms for lifting spin degeneracy include exchange coupling, spin-dependent scattering, spin i…
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Many recipes for realizing topological superconductivity rely on broken time-reversal symmetry, which is often attained by applying a substantial external magnetic field. Alternatively, using magnetic materials can offer advantages through low-field operation and design flexibility on the nanoscale. Mechanisms for lifting spin degeneracy include exchange coupling, spin-dependent scattering, spin injection-all requiring direct contact between the bulk or induced superconductor and a magnetic material. Here, we implement locally broken time-reversal symmetry through dipolar coupling from nearby micromagnets to superconductor-semiconductor hybrid nanowire devices. Josephson supercurrent is hysteretic due to micromangets switching. At or around zero external magnetic field, we observe an extended presence of Andreev bound states near zero voltage bias. We also show a zero-bias peak plateau of a non-quantized value. Our findings largely reproduce earlier results where similar effects were presented in the context of topological superconductivity in a homogeneous wire, and attributed to more exotic time-reversal breaking mechanisms [1]. In contrast, our stray field profiles are not designed to create Majorana modes, and our data are compatible with a straightforward interpretation in terms of trivial states in quantum dots. At the same time, the use of micromagnets in hybrid superconductor-semiconductor devices shows promise for future experiments on topological superconductivity.
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Submitted 31 May, 2023;
originally announced May 2023.
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Competing Uniaxial Anisotropies in Epitaxial Fe Thin Films Grown on InAs(001)
Authors:
James M. Etheridge,
Joseph Dill,
Connor P. Dempsey,
Mihir Pendharkar,
Javier Garcia-Barriocanal,
Guichuan Yu,
Vlad S. Pribiag,
Paul A. Crowell,
Chris J. Palmstrøm
Abstract:
We report on the interplay of two uniaxial magnetic anisotropies in epitaxial Fe thin films of varying thickness grown on InAs(001) as observed in ferromagnetic resonance experiments. One anisotropy originates from the Fe/InAs interface while the other originates from in-plane shear strain resulting from the anisotropic relaxation of the Fe film. X-ray diffraction was used to measure the in-plane…
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We report on the interplay of two uniaxial magnetic anisotropies in epitaxial Fe thin films of varying thickness grown on InAs(001) as observed in ferromagnetic resonance experiments. One anisotropy originates from the Fe/InAs interface while the other originates from in-plane shear strain resulting from the anisotropic relaxation of the Fe film. X-ray diffraction was used to measure the in-plane lattice constants of the Fe films, confirming the correlation between the onset of film relaxation and the corresponding shear strain inferred from ferromagnetic resonance data. These results are relevant for ongoing efforts to develop spintronic and quantum devices utilizing large spin-orbit coupling in III-V semiconductors.
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Submitted 23 May, 2023;
originally announced May 2023.
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First Principles Study of the Electronic Structure of the Ni$_2$MnIn/InAs and Ti$_2$MnIn/InSb interfaces
Authors:
Brett Heischmidt,
Maituo Yu,
Derek Dardzinski,
James Etheridge,
Saeed Moayedpour,
Vlad S. Pribiag,
Paul A. Crowell,
Noa Marom
Abstract:
We present a first-principles study of the electronic and magnetic properties of epitaxial interfaces between the Heusler compounds Ti$_2$MnIn and Ni$_2$MnIn and the III-V semiconductors, InSb and InAs, respectively. We use density functional theory (DFT) with a machine-learned Hubbard $U$ correction determined by Bayesian optimization. We evaluate these interfaces for prospective applications in…
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We present a first-principles study of the electronic and magnetic properties of epitaxial interfaces between the Heusler compounds Ti$_2$MnIn and Ni$_2$MnIn and the III-V semiconductors, InSb and InAs, respectively. We use density functional theory (DFT) with a machine-learned Hubbard $U$ correction determined by Bayesian optimization. We evaluate these interfaces for prospective applications in Majorana-based quantum computing and spintronics. In both interfaces, states from the Heusler penetrate into the gap of the semiconductor, decaying within a few atomic layers. The magnetic interactions at the interface are weak and local in space and energy. Magnetic moments of less than 0.1 $μ_B$ are induced in the two atomic layers closest to the interface. The induced spin polarization around the Fermi level of the semiconductor also decays within a few atomic layers. The decisive factor for the induced spin polarization around the Fermi level of the semiconductor is the spin polarization around the Fermi level in the Heusler, rather than the overall magnetic moment. As a result, the ferrimagnetic narrow-gap semiconductor Ti$_2$MnIn induces a more significant spin polarization in the InSb than the ferromagnetic metal Ni$_2$MnIn induces in the InAs. This is explained by the position of the transition metal $d$ states in the Heusler with respect to the Fermi level. Based on our results, these interfaces are unlikely to be useful for Majorana devices but could be of interest for spintronics.
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Submitted 7 January, 2023; v1 submitted 28 September, 2022;
originally announced September 2022.
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Gate-tunable Superconducting Diode Effect in a Three-terminal Josephson Device
Authors:
Mohit Gupta,
Gino V. Graziano,
Mihir Pendharkar,
Jason T. Dong,
Connor P. Dempsey,
Chris Palmstrøm,
Vlad S. Pribiag
Abstract:
The phenomenon of non-reciprocal critical current in a Josephson device, termed the Josephson diode effect, has garnered much recent interest. Realization of the diode effect requires inversion symmetry breaking, typically obtained by spin-orbit interactions. Here we report observation of the Josephson diode effect in a three-terminal Josephson device based upon an InAs quantum well two-dimensiona…
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The phenomenon of non-reciprocal critical current in a Josephson device, termed the Josephson diode effect, has garnered much recent interest. Realization of the diode effect requires inversion symmetry breaking, typically obtained by spin-orbit interactions. Here we report observation of the Josephson diode effect in a three-terminal Josephson device based upon an InAs quantum well two-dimensional electron gas proximitized by an epitaxial aluminum superconducting layer. We demonstrate that the diode efficiency in our devices can be tuned by a small out-of-plane magnetic field or by electrostatic gating. We show that the Josephson diode effect in these devices is a consequence of the artificial realization of a current-phase relation that contains higher harmonics. We also show nonlinear DC intermodulation and simultaneous two-signal rectification, enabled by the multi-terminal nature of the devices. Furthermore, we show that the diode effect is an inherent property of multi-terminal Josephson devices, establishing an immediately scalable approach by which potential applications of the Josephson diode effect can be realized, agnostic to the underlying material platform. These Josephson devices may also serve as gate-tunable building blocks in designing topologically protected qubits.
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Submitted 3 June, 2023; v1 submitted 16 June, 2022;
originally announced June 2022.
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Selective Control of Conductance Modes in Multi-terminal Josephson Junctions
Authors:
Gino V. Graziano,
Mohit Gupta,
Mihir Pendharkar,
Jason T. Dong,
Connor P. Dempsey,
Chris Palmstrøm,
Vlad S. Pribiag
Abstract:
The Andreev bound state spectra of multi-terminal Josephson junctions form an artificial band structure, which is predicted to host tunable topological phases under certain conditions. However, the number of conductance modes between the terminals of multi-terminal Josephson junction must be few in order for this spectrum to be experimentally accessible. In this work we employ a quantum point cont…
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The Andreev bound state spectra of multi-terminal Josephson junctions form an artificial band structure, which is predicted to host tunable topological phases under certain conditions. However, the number of conductance modes between the terminals of multi-terminal Josephson junction must be few in order for this spectrum to be experimentally accessible. In this work we employ a quantum point contact geometry in three-terminal Josephson devices. We demonstrate independent control of conductance modes between each pair of terminals and access to the single-mode regime coexistent with the presence of superconducting coupling. These results establish a full platform on which to realize tunable Andreev bound state spectra in multi-terminal Josephson junctions.
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Submitted 9 October, 2022; v1 submitted 4 January, 2022;
originally announced January 2022.
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Anomalous Transport in High-Mobility Superconducting SrTiO$_3$ Thin Films
Authors:
** Yue,
Yilikal Ayino,
Tristan K. Truttmann,
Maria N. Gastiasoro,
Eylon Persky,
Alex Khanukov,
Dooyong Lee,
Laxman R. Thoutam,
Beena Kalisky,
Rafael M. Fernandes,
Vlad S. Pribiag,
Bharat Jalan
Abstract:
The study of subtle effects on transport in semiconductors requires high-quality epitaxial structures with low defect density. Using hybrid molecular beam epitaxy (MBE), SrTiO$_3$ films with low-temperature mobility exceeding 42,000 cm$^2$V$^{-1}$s$^{-1}$ at low carrier density of 3 x 10$^{17}$ cm$^{-3}$ were achieved. A sudden and sharp decrease in residual resistivity accompanied by an enhanceme…
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The study of subtle effects on transport in semiconductors requires high-quality epitaxial structures with low defect density. Using hybrid molecular beam epitaxy (MBE), SrTiO$_3$ films with low-temperature mobility exceeding 42,000 cm$^2$V$^{-1}$s$^{-1}$ at low carrier density of 3 x 10$^{17}$ cm$^{-3}$ were achieved. A sudden and sharp decrease in residual resistivity accompanied by an enhancement in the superconducting transition temperature were observed across the second Lifshitz transition (LT) where the third band becomes occupied, revealing dominant intra-band scattering. These films further revealed an anomalous behavior in the Hall carrier density as a consequence of the antiferrodistortive (AFD) transition and the temperature-dependence of the Hall scattering factor. Using hybrid MBE growth, phenomenological modeling, temperature-dependent transport measurements, and scanning superconducting quantum interference device imaging, we provide critical insights into the important role of inter- vs intra-band scattering and of AFD domain walls on normal-state and superconducting properties of SrTiO$_3$.
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Submitted 22 July, 2021;
originally announced July 2021.
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Spin-helical detection in a semiconductor quantum device with ferromagnetic contacts
Authors:
Zedong Yang,
Paul A. Crowell,
Vlad S. Pribiag
Abstract:
Spin-helical states, which arise in quasi-one-dimensional (1D) channels with spin-orbital (SO) coupling, underpin efforts to realize topologically-protected quantum bits based on Majorana modes in semiconductor nanowires. Detecting helical states is challenging due to non-idealities present in real devices. Here we show by means of tight-binding calculations that by using ferromagnetic contacts it…
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Spin-helical states, which arise in quasi-one-dimensional (1D) channels with spin-orbital (SO) coupling, underpin efforts to realize topologically-protected quantum bits based on Majorana modes in semiconductor nanowires. Detecting helical states is challenging due to non-idealities present in real devices. Here we show by means of tight-binding calculations that by using ferromagnetic contacts it is possible to detect helical modes with high sensitivity even in the presence of realistic device effects, such as quantum interference. This is possible because of the spin-selective transmission properties of helical modes. In addition, we show that spin-polarized contacts provide a unique path to investigate the spin texture and spin-momentum locking properties of helical states. Our results are of interest not only for the ongoing development of Majorana qubits, but also as for realizing possible spin-based quantum devices, such as quantum spin modulators and interconnects based on spin-helical channels.
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Submitted 6 April, 2021;
originally announced April 2021.
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Dependence of the electronic structure of the EuS/InAs interface on the bonding configuration
Authors:
Maituo Yu,
Saeed Moayedpour,
Shuyang Yang,
Derek Dardzinski,
Chunzhi Wu,
Vlad S. Pribiag,
Noa Marom
Abstract:
Recently, the EuS/InAs interface has attracted attention for the possibility of inducing magnetic exchange correlations in a strong spin-orbit semiconductor, which could be useful for topological quantum devices. We use density functional theory (DFT) with a machine-learned Hubbard $U$ correction [npj Comput. Mater. 6, 180 (2020)] to elucidate the effect of the bonding configuration at the interfa…
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Recently, the EuS/InAs interface has attracted attention for the possibility of inducing magnetic exchange correlations in a strong spin-orbit semiconductor, which could be useful for topological quantum devices. We use density functional theory (DFT) with a machine-learned Hubbard $U$ correction [npj Comput. Mater. 6, 180 (2020)] to elucidate the effect of the bonding configuration at the interface on the electronic structure. For all interface configurations considered here, we find that the EuS valence band maximum (VBM) lies below the InAs VBM. In addition, dispersed states emerge at the top of the InAs VBM at the interface, which do not exist in either material separately. These states are contributed mainly by the InAs layer adjacent to the interface. They are localized at the interface and may be attributed to charge transfer from the EuS to the InAs. The interface configuration affects the position of the EuS VBM with respect to the InAs VBM, as well as the dispersion of the interface state. For all interface configurations studied here, the induced magnetic moment in the InAs is small. This suggests that this interface, in its coherent form studied here, is not promising for inducing equilibrium magnetic properties in InAs.
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Submitted 4 April, 2021;
originally announced April 2021.
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From Weak Antilocalization to Kondo Scattering in a Magnetic Complex Oxide Interface
Authors:
Xinxin Cai,
** Yue,
Peng Xu,
Bharat Jalan,
Vlad S. Pribiag
Abstract:
Quantum corrections to electrical resistance can serve as sensitive probes of the magnetic landscape of a material. For example, interference between time-reversed electron paths gives rise to weak localization effects, which can provide information about the coupling between spins and orbital motion, while the Kondo effect is sensitive to the presence of spin impurities. Here we use low-temperatu…
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Quantum corrections to electrical resistance can serve as sensitive probes of the magnetic landscape of a material. For example, interference between time-reversed electron paths gives rise to weak localization effects, which can provide information about the coupling between spins and orbital motion, while the Kondo effect is sensitive to the presence of spin impurities. Here we use low-temperature magnetotransport measurements to reveal a transition from weak antilocalization (WAL) to Kondo scattering in the quasi-two-dimensional electron gas formed at the interface between SrTiO$_3$ and the Mott insulator NdTiO$_3$. This transition occurs as the thickness of the NdTiO$_3$ layer is increased. Analysis of the Kondo scattering and WAL points to the presence of atomic-scale magnetic impurities coexisting with extended magnetic regions that affect transport via a strong magnetic exchange interaction. This leads to distinct magnetoresistance behaviors that can serve as a sensitive probe of magnetic properties in two dimensions.
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Submitted 3 July, 2020;
originally announced July 2020.
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Unexpected two-fold symmetric superconductivity in few-layer NbSe$_2$
Authors:
Alex Hamill,
Brett Heischmidt,
Egon Sohn,
Daniel Shaffer,
Kan-Ting Tsai,
Xi Zhang,
Xiaoxiang Xi,
Alexey Suslov,
Helmuth Berger,
László Forró,
Fiona J. Burnell,
Jie Shan,
Kin Fai Mak,
Rafael M. Fernandes,
Ke Wang,
Vlad S. Pribiag
Abstract:
Two-dimensional transition metal dichalcogenides (TMDs) have been attracting significant interest due to a range of properties, such as layer-dependent inversion symmetry, valley-contrasted Berry curvatures, and strong spin-orbit coupling (SOC). Of particular interest is niobium diselenide (NbSe2), whose superconducting state in few-layer samples is profoundly affected by an unusual type of SOC ca…
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Two-dimensional transition metal dichalcogenides (TMDs) have been attracting significant interest due to a range of properties, such as layer-dependent inversion symmetry, valley-contrasted Berry curvatures, and strong spin-orbit coupling (SOC). Of particular interest is niobium diselenide (NbSe2), whose superconducting state in few-layer samples is profoundly affected by an unusual type of SOC called Ising SOC. Combined with the reduced dimensionality, the latter stabilizes the superconducting state against magnetic fields up to ~35 T and could lead to other exotic properties such as nodal and crystalline topological superconductivity. Here, we report transport measurements of few-layer NbSe$_2$ under in-plane external magnetic fields, revealing an unexpected two-fold rotational symmetry of the superconducting state. In contrast to the three-fold symmetry of the lattice, we observe that the magnetoresistance and critical field exhibit a two-fold oscillation with respect to an applied in-plane magnetic field. We find similar two-fold oscillations deep inside the superconducting state in differential conductance measurements on NbSe$_2$/CrBr$_3$ superconductor-magnet junctions. In both cases, the anisotropy vanishes in the normal state, demonstrating that it is an intrinsic property of the superconducting phase. We attribute the behavior to the mixing between two closely competing pairing instabilities, namely, the conventional s-wave instability typical of bulk NbSe$_2$ and an unconventional d- or p-wave channel that emerges in few-layer NbSe2. Our results thus demonstrate the unconventional character of the pairing interaction in a few-layer TMD, opening a new avenue to search for exotic superconductivity in this family of 2D materials.
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Submitted 6 April, 2020;
originally announced April 2020.
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Spin transport in ferromagnet-InSb nanowire quantum devices
Authors:
Zedong Yang,
Brett Heischmidt,
Sasa Gazibegovic,
Ghada Badawy,
Diana Car,
Paul A. Crowell,
Erik P. A. M. Bakkers,
Vlad S. Pribiag
Abstract:
Signatures of Majorana zero modes (MZMs), which are the building blocks for fault-tolerant topological quantum computing, have been observed in semiconductor nanowires (NW) with strong spin-orbital-interaction (SOI), such as InSb and InAs NWs with proximity-induced superconductivity. Realizing topological superconductivity and MZMs in this most widely-studied platform also requires eliminating spi…
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Signatures of Majorana zero modes (MZMs), which are the building blocks for fault-tolerant topological quantum computing, have been observed in semiconductor nanowires (NW) with strong spin-orbital-interaction (SOI), such as InSb and InAs NWs with proximity-induced superconductivity. Realizing topological superconductivity and MZMs in this most widely-studied platform also requires eliminating spin degeneracy, which is realized by applying a magnetic field to induce a helical gap. However, the applied field can adversely impact the induced superconducting state in the NWs and also places geometric restrictions on the device, which can affect scaling of future MZM-based quantum registers. These challenges could be circumvented by integrating magnetic elements with the NWs. With this motivation, in this work we report the first experimental investigation of spin transport across InSb NWs, which are enabled by devices with ferromagnetic (FM) contacts. We observe signatures of spin polarization and spin-dependent transport in the quasi-one-dimensional ballistic regime. Moreover, we show that electrostatic gating tunes the observed magnetic signal and also reveals a transport regime where the device acts as a spin filter. These results open an avenue towards develo** MZM devices in which spin degeneracy is lifted locally, without the need of an applied magnetic field. They also provide a path for realizing spin-based devices that leverage spin-orbital states in quantum wires.
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Submitted 16 September, 2019;
originally announced September 2019.
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Transport Studies in a Gate-Tunable Three-Terminal Josephson Junction
Authors:
Gino V. Graziano,
Joon Sue Lee,
Mihir Pendharkar,
Chris Palmstrøm,
Vlad S. Pribiag
Abstract:
Josephson junctions with three or more superconducting leads have been predicted to exhibit topological effects in the presence of few conducting modes within the interstitial normal material. Such behavior, of relevance for topologically-protected quantum bits, would lead to specific transport features measured between terminals, with topological phase transitions occurring as a function of phase…
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Josephson junctions with three or more superconducting leads have been predicted to exhibit topological effects in the presence of few conducting modes within the interstitial normal material. Such behavior, of relevance for topologically-protected quantum bits, would lead to specific transport features measured between terminals, with topological phase transitions occurring as a function of phase and voltage bias. Although conventional, two-terminal Josephson junctions have been studied extensively, multi-terminal devices have received relatively little attention to date. Motivated in part by the possibility to ultimately observe topological phenomena in multi-terminal Josephson devices, as well as their potential for coupling gatemon qubits, here we describe the superconducting features of a top-gated mesoscopic three-terminal Josephson device. The device is based on an InAs two-dimensional electron gas (2DEG) proximitized by epitaxial aluminum. We map out the transport properties of the device as a function of bias currents, top gate voltage and magnetic field. We find a very good agreement between the zero-field experimental phase diagram and a resistively and capacitively shunted junction (RCSJ) computational model.
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Submitted 24 February, 2020; v1 submitted 28 May, 2019;
originally announced May 2019.
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Disentangling spin-orbit coupling and local magnetism in a quasi-two-dimensional electron system
Authors:
Xinxin Cai,
Yilikal Ayino,
** Yue,
Peng Xu,
Bharat Jalan,
Vlad S. Pribiag
Abstract:
Quantum interference between time-reversed electron paths in two dimensions leads to the well-known weak localization correction to resistance. If spin-orbit coupling is present, the resistance correction is negative, termed weak anti-localization (WAL). Here we report the observation of WAL coexisting with exchange coupling between itinerant electrons and localized magnetic moments. We use low-te…
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Quantum interference between time-reversed electron paths in two dimensions leads to the well-known weak localization correction to resistance. If spin-orbit coupling is present, the resistance correction is negative, termed weak anti-localization (WAL). Here we report the observation of WAL coexisting with exchange coupling between itinerant electrons and localized magnetic moments. We use low-temperature magneto-transport measurements to investigate the quasi-two-dimensional, high-electron-density interface formed between SrTiO$_3$ (STO) and the anti-ferromagnetic Mott insulator NdTiO$_3$ (NTO). As the magnetic field angle is gradually tilted away from the sample normal, the data reveals the interplay between strong $k$-cubic Rashba-type spin-orbit coupling and a substantial magnetic exchange interaction from local magnetic regions. The resulting quantum corrections to the conduction are in excellent agreement with existing models and allow sensitive determination of the small magnetic moments (22 $μ_B$ on average), their magnetic anisotropy and mutual coupling strength. This effect is expected to arise in other 2D magnetic materials systems.
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Submitted 16 August, 2019; v1 submitted 30 March, 2019;
originally announced April 2019.
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Effects of paramagnetic pair-breaking and spin-orbital coupling on multi-band superconductivity
Authors:
Yilikal Ayino,
** Yue,
Tianqi Wang,
Bharat Jalan,
Vlad S. Pribiag
Abstract:
The BCS picture of superconductivity describes pairing between electrons originating from a single band. A generalization of this picture occurs in multi-band superconductors, where electrons from two or more bands contribute to superconductivity. The contributions of the different bands can result in an overall enhancement of the critical field and can lead to qualitative changes in the temperatu…
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The BCS picture of superconductivity describes pairing between electrons originating from a single band. A generalization of this picture occurs in multi-band superconductors, where electrons from two or more bands contribute to superconductivity. The contributions of the different bands can result in an overall enhancement of the critical field and can lead to qualitative changes in the temperature dependence of the upper critical field when compared to the single-band case. While the role of orbital pair-breaking on the critical field of multi-band superconductors has been explored extensively, paramagnetic and spin-orbital scattering effects have received comparatively little attention. Here we investigate this problem using thin films of Nd-doped SrTiO$_3$. We furthermore propose a model for analyzing the temperature-dependence of the critical field in the presence of orbital, paramagnetic and spin-orbital effects, and find a very good agreement with our data. Interestingly, we also observe a dramatic enhancement in the out-of-plane critical field to values well in excess of the Chandrasekhar-Clogston (Pauli) paramagnetic limit, which can be understood as a consequence of multi-band effects in the presence of spin-orbital scattering.
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Submitted 22 June, 2020; v1 submitted 6 December, 2018;
originally announced December 2018.
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Ferromagnetism and spin-dependent transport at a complex oxide interface
Authors:
Yilikal Ayino,
Peng Xu,
Juan Tigre-Lazo,
** Yue,
Bharat Jalan,
Vlad S. Pribiag
Abstract:
Complex oxide interfaces are a promising platform for studying a wide array of correlated electron phenomena in low-dimensions, including magnetism and superconductivity. The microscopic origin of these phenomena in complex oxide interfaces remains an open question. Here we investigate for the first time the magnetic properties of semi-insulating NdTiO$_3$/SrTiO$_3$ (NTO/STO) interfaces and presen…
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Complex oxide interfaces are a promising platform for studying a wide array of correlated electron phenomena in low-dimensions, including magnetism and superconductivity. The microscopic origin of these phenomena in complex oxide interfaces remains an open question. Here we investigate for the first time the magnetic properties of semi-insulating NdTiO$_3$/SrTiO$_3$ (NTO/STO) interfaces and present the first milli-Kelvin study of NTO/STO. The magnetoresistance (MR) reveals signatures of local ferromagnetic order and of spin-dependent thermally-activated transport, which are described quantitatively by a simple phenomenological model. We discuss possible origins of the interfacial ferromagnetism. In addition, the MR also shows transient hysteretic features on a timescale of ~10-100 seconds. We demonstrate that these are consistent with an extrinsic magneto-thermal origin, which may have been misinterpreted in previous reports of magnetism in STO-based oxide interfaces. The existence of these two MR regimes (steady-state and transient) highlights the importance of time-dependent measurements for distinguishing signatures of ferromagnetism from other effects that can produce hysteresis at low temperatures.
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Submitted 27 March, 2018; v1 submitted 28 April, 2017;
originally announced April 2017.
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Gate-tunable high mobility remote-doped InSb/In_{1-x}Al_{x}Sb quantum well heterostructures
Authors:
Wei Yi,
Andrey A. Kiselev,
Jacob Thorp,
Ramsey Noah,
Binh-Minh Nguyen,
Steven Bui,
Rajesh D. Rajavel,
Tahir Hussain,
Mark Gyure,
Philip Kratz,
Qi Qian,
Michael J. Manfra,
Vlad S. Pribiag,
Leo P. Kouwenhoven,
Charles M. Marcus,
Marko Sokolich
Abstract:
Gate-tunable high-mobility InSb/In_{1-x}Al_{x}Sb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200,000 cm^{2}/Vs is measured at T=1.8K. In asymmetrically remote-doped samples with an HfO_{2} gate dielectric formed by atomic layer deposition, parallel conduction is eliminated and complete 2DEG channel depletion is…
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Gate-tunable high-mobility InSb/In_{1-x}Al_{x}Sb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200,000 cm^{2}/Vs is measured at T=1.8K. In asymmetrically remote-doped samples with an HfO_{2} gate dielectric formed by atomic layer deposition, parallel conduction is eliminated and complete 2DEG channel depletion is reached with minimal hysteresis in gate bias response of the 2DEG electron density. The integer quantum Hall effect with Landau level filling factor down to 1 is observed. A high-transparency non-alloyed Ohmic contact to the 2DEG with contact resistance below 1Ω \cdot mm is achieved at 1.8K.
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Submitted 23 March, 2015;
originally announced March 2015.
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Spin-orbit interaction in InSb nanowires
Authors:
I. van Weperen,
B. Tarasinski,
D. Eeltink,
V. S. Pribiag,
S. R. Plissard,
E. P. A. M. Bakkers,
L. P. Kouwenhoven,
M. Wimmer
Abstract:
We use magnetoconductance measurements in dual-gated InSb nanowire devices together with a theoretical analysis of weak antilocalization to accurately extract spin-orbit strength. In particular, we show that magnetoconductance in our three-dimensional wires is very different compared to wires in two-dimensional electron gases. We obtain a large Rashba spin-orbit strength of $0.5 -1\,\text{eVÅ}$ co…
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We use magnetoconductance measurements in dual-gated InSb nanowire devices together with a theoretical analysis of weak antilocalization to accurately extract spin-orbit strength. In particular, we show that magnetoconductance in our three-dimensional wires is very different compared to wires in two-dimensional electron gases. We obtain a large Rashba spin-orbit strength of $0.5 -1\,\text{eVÅ}$ corresponding to a spin-orbit energy of $0.25-1\,\text{meV}$. These values underline the potential of InSb nanowires in the study of Majorana fermions in hybrid semiconductor-superconductor devices.
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Submitted 18 May, 2015; v1 submitted 2 December, 2014;
originally announced December 2014.
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Edge-mode Superconductivity in a Two Dimensional Topological Insulator
Authors:
Vlad S. Pribiag,
Arjan J. A. Beukman,
Fanming Qu,
Maja C. Cassidy,
Christophe Charpentier,
Werner Wegscheider,
Leo P. Kouwenhoven
Abstract:
Topological superconductivity is an exotic state of matter that supports Majorana zero-modes, which are surface modes in 3D, edge modes in 2D or localized end states in 1D. In the case of complete localization these Majorana modes obey non-Abelian exchange statistics making them interesting building blocks for topological quantum computing. Here we report superconductivity induced into the edge mo…
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Topological superconductivity is an exotic state of matter that supports Majorana zero-modes, which are surface modes in 3D, edge modes in 2D or localized end states in 1D. In the case of complete localization these Majorana modes obey non-Abelian exchange statistics making them interesting building blocks for topological quantum computing. Here we report superconductivity induced into the edge modes of semiconducting InAs/GaSb quantum wells, a two-dimensional topological insulator. Using superconducting quantum interference, we demonstrate gate-tuning between edge-dominated and bulk-dominated regimes of superconducting transport. The edge-dominated regime arises only under conditions of high-bulk resistivity, which we associate with the 2D topological phase. These experiments establish InAs/GaSb as a robust platform for further confinement of Majoranas into localized states enabling future investigations of non-Abelian statistics.
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Submitted 7 August, 2014;
originally announced August 2014.
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A quasi-linear spin-torque nano-oscillator via enhanced negative feedback of power fluctuations
Authors:
O. J. Lee,
P. M. Braganca,
V. S. Pribiag,
D. C. Ralph,
R. A. Buhrman
Abstract:
We report an approach to improving the performance of spin torque nano-oscillators (STNOs) that utilizes power-dependent negative feedback to achieve a significantly enhanced dynamic dam**. In combination with a sufficiently slow variation of frequency with power this can result in a quasi-linear STNO, with very weak non-linear coupling of power and phase fluctuations over a range of bias curren…
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We report an approach to improving the performance of spin torque nano-oscillators (STNOs) that utilizes power-dependent negative feedback to achieve a significantly enhanced dynamic dam**. In combination with a sufficiently slow variation of frequency with power this can result in a quasi-linear STNO, with very weak non-linear coupling of power and phase fluctuations over a range of bias current and field. An implementation of this approach that utilizes a non-uniform spin-torque demonstrates that highly coherent room temperature STNOs can be achieved while retaining a significant tunability.
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Submitted 19 June, 2013;
originally announced June 2013.
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Electrical control over single hole spins in nanowire quantum dots
Authors:
V. S. Pribiag,
S. Nadj-Perge,
S. M. Frolov,
J. W. G. van den Berg,
I. van Weperen,
S. R. Plissard,
E. P. A. M. Bakkers,
L. P. Kouwenhoven
Abstract:
Single electron spins in semiconductor quantum dots (QDs) are a versatile platform for quantum information processing, however controlling decoherence remains a considerable challenge. Recently, hole spins have emerged as a promising alternative. Holes in III-V semiconductors have unique properties, such as strong spin-orbit interaction and weak coupling to nuclear spins, and therefore have potent…
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Single electron spins in semiconductor quantum dots (QDs) are a versatile platform for quantum information processing, however controlling decoherence remains a considerable challenge. Recently, hole spins have emerged as a promising alternative. Holes in III-V semiconductors have unique properties, such as strong spin-orbit interaction and weak coupling to nuclear spins, and therefore have potential for enhanced spin control and longer coherence times. Weaker hyperfine interaction has already been reported in self-assembled quantum dots using quantum optics techniques. However, challenging fabrication has so far kept the promise of hole-spin-based electronic devices out of reach in conventional III-V heterostructures. Here, we report gate-tuneable hole quantum dots formed in InSb nanowires. Using these devices we demonstrate Pauli spin blockade and electrical control of single hole spins. The devices are fully tuneable between hole and electron QDs, enabling direct comparison between the hyperfine interaction strengths, g-factors and spin blockade anisotropies in the two regimes.
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Submitted 11 February, 2013;
originally announced February 2013.
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Fast spin-orbit qubit in an indium antimonide nanowire
Authors:
J. W. G. van den Berg,
S. Nadj-Perge,
V. S. Pribiag,
S. R. Plissard,
E. P. A. M. Bakkers,
S. M. Frolov,
L. P. Kouwenhoven
Abstract:
Due to the strong spin-orbit interaction in indium antimonide, orbital motion and spin are no longer separated. This enables fast manipulation of qubit states by means of microwave electric fields. We report Rabi oscillation frequencies exceeding 100 MHz for spin-orbit qubits in InSb nanowires. Individual qubits can be selectively addressed due to intrinsic dierences in their g-factors. Based on R…
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Due to the strong spin-orbit interaction in indium antimonide, orbital motion and spin are no longer separated. This enables fast manipulation of qubit states by means of microwave electric fields. We report Rabi oscillation frequencies exceeding 100 MHz for spin-orbit qubits in InSb nanowires. Individual qubits can be selectively addressed due to intrinsic dierences in their g-factors. Based on Ramsey fringe measurements, we extract a coherence time T_2* = 8 +/- 1 ns at a driving frequency of 18.65 GHz. Applying a Hahn echo sequence extends this coherence time to 35 ns.
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Submitted 26 October, 2012;
originally announced October 2012.
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Suppression of Zeeman gradients by nuclear polarization in double quantum dots
Authors:
S. M. Frolov,
J. Danon,
S. Nadj-Perge,
K. Zuo,
J. W. W. van Tilburg,
V. S. Pribiag,
J. W. G. van den Berg,
E. P. A. M. Bakkers,
L. P. Kouwenhoven
Abstract:
We use electric dipole spin resonance to measure dynamic nuclear polarization in InAs nanowire quantum dots. The resonance shifts in frequency when the system transitions between metastable high and low current states, indicating the presence of nuclear polarization. We propose that the low and the high current states correspond to different total Zeeman energy gradients between the two quantum do…
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We use electric dipole spin resonance to measure dynamic nuclear polarization in InAs nanowire quantum dots. The resonance shifts in frequency when the system transitions between metastable high and low current states, indicating the presence of nuclear polarization. We propose that the low and the high current states correspond to different total Zeeman energy gradients between the two quantum dots. In the low current state, dynamic nuclear polarization efficiently compensates the Zeeman gradient due to the $g$-factor mismatch, resulting in a suppressed total Zeeman gradient. We present a theoretical model of electron-nuclear feedback that demonstrates a fixed point in nuclear polarization for nearly equal Zeeman splittings in the two dots and predicts a narrowed hyperfine gradient distribution.
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Submitted 7 September, 2012;
originally announced September 2012.
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Spectroscopy of spin-orbit quantum bits in indium antimonide nanowires
Authors:
S. Nadj-Perge,
V. S. Pribiag,
J. W. G. van den Berg,
K. Zuo,
S. R. Plissard,
E. P. A. M. Bakkers,
S. M. Frolov,
L. P. Kouwenhoven
Abstract:
Double quantum dot in the few-electron regime is achieved using local gating in an InSb nanowire. The spectrum of two-electron eigenstates is investigated using electric dipole spin resonance. Singlet-triplet level repulsion caused by spin-orbit interaction is observed. The size and the anisotropy of singlet-triplet repulsion are used to determine the magnitude and the orientation of the spin-orbi…
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Double quantum dot in the few-electron regime is achieved using local gating in an InSb nanowire. The spectrum of two-electron eigenstates is investigated using electric dipole spin resonance. Singlet-triplet level repulsion caused by spin-orbit interaction is observed. The size and the anisotropy of singlet-triplet repulsion are used to determine the magnitude and the orientation of the spin-orbit effective field in an InSb nanowire double dot. The obtained results are confirmed using spin blockade leakage current anisotropy and transport spectroscopy of individual quantum dots.
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Submitted 26 April, 2012; v1 submitted 18 January, 2012;
originally announced January 2012.
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Spin-torque driven magnetic vortex self-oscillations in perpendicular magnetic fields
Authors:
G. Finocchio,
V. S. Pribiag,
L. Torres,
R. A. Buhrman,
B. Azzerboni
Abstract:
We have employed complete micromagnetic simulations to analyze dc current driven self-oscillations of a vortex core in a spin-valve nanopillar in a perpendicular field by including the coupled effect of the spin-torque and the magnetostatic field computed self-consistently for the entire spin-valve. The vortex in the thicker nanomagnet moves along a quasi-elliptical trajectory that expands with…
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We have employed complete micromagnetic simulations to analyze dc current driven self-oscillations of a vortex core in a spin-valve nanopillar in a perpendicular field by including the coupled effect of the spin-torque and the magnetostatic field computed self-consistently for the entire spin-valve. The vortex in the thicker nanomagnet moves along a quasi-elliptical trajectory that expands with applied current, resulting in blue-shifting of the frequency, while the magnetization of the thinner nanomagnet is non-uniform due to the bias current. The simulations explain the experimental magnetoresistance-field hysteresis loop and yield good agreement with the measured frequency vs. current behavior of this spin-torque vortex oscillator.
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Submitted 15 February, 2010;
originally announced February 2010.
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Ultrafast switching of a nanomagnet by a combined out-of-plane and in-plane polarized spin-current pulse
Authors:
O. J. Lee,
V. S. Pribiag,
P. M. Braganca,
P. G. Gowtham,
D. C. Ralph,
R. A. Buhrman
Abstract:
We report on spin valve devices that incorporate both an out-of-plane polarizer (OPP) to quickly excite spin torque (ST) switching and an in-plane polarizer/analyzer (IPP). For pulses < 200 ps we observe reliable precessional switching due largely to ST from the OPP. Compared to a conventional spin valve, for a given current in the short pulse regime the addition of the OPP can decrease the puls…
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We report on spin valve devices that incorporate both an out-of-plane polarizer (OPP) to quickly excite spin torque (ST) switching and an in-plane polarizer/analyzer (IPP). For pulses < 200 ps we observe reliable precessional switching due largely to ST from the OPP. Compared to a conventional spin valve, for a given current in the short pulse regime the addition of the OPP can decrease the pulse width necessary for switching by a factor of 10 or more. The influence of the IPP is most obvious at longer, smaller pulses, but also has beneficial ST consequences for short pulse switching.
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Submitted 14 June, 2009;
originally announced June 2009.
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Spin-Torque Ferromagnetic Resonance Measurements of Dam** in Nanomagnets
Authors:
G. D. Fuchs,
J. C. Sankey,
V. S. Pribiag,
L. Qian,
P. M. Braganca,
A. G. F. Garcia,
E. M. Ryan,
Zhi-Pan Li,
O. Ozatay,
D. C. Ralph,
R. A. Buhrman
Abstract:
We measure the magnetic dam** parameter a in thin film CoFeB and permalloy (Py) nanomagnets at room temperature using ferromagnetic resonance driven by microwave frequency spin-transfer torque. We obtain $α_{CoFeB} = 0.014 \pm 0.003$ and $α_{Py}=0.010 \pm 0.002$, values comparable to measurements for extended thin films, but significantly less than the effective dam** determined previously f…
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We measure the magnetic dam** parameter a in thin film CoFeB and permalloy (Py) nanomagnets at room temperature using ferromagnetic resonance driven by microwave frequency spin-transfer torque. We obtain $α_{CoFeB} = 0.014 \pm 0.003$ and $α_{Py}=0.010 \pm 0.002$, values comparable to measurements for extended thin films, but significantly less than the effective dam** determined previously for similar nanomagnets by fits to time-domain studies of large-angle magnetic excitations and magnetic reversal. The greater dam** found for the large amplitude nanomagnet dynamics is attributed to the nonlinear excitation of non-uniform magnetic modes.
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Submitted 22 March, 2007;
originally announced March 2007.
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Magnetic vortex oscillator driven by dc spin-polarized current
Authors:
V. S. Pribiag,
I. N. Krivorotov,
G. D. Fuchs,
P. M. Braganca,
O. Ozatay,
J. C. Sankey,
D. C. Ralph,
R. A. Buhrman
Abstract:
Transfer of angular momentum from a spin-polarized current to a ferromagnet provides an efficient means to control the dynamics of nanomagnets. A peculiar consequence of this spin-torque, the ability to induce persistent oscillations of a nanomagnet by applying a dc current, has previously been reported only for spatially uniform nanomagnets. Here we demonstrate that a quintessentially nonunifor…
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Transfer of angular momentum from a spin-polarized current to a ferromagnet provides an efficient means to control the dynamics of nanomagnets. A peculiar consequence of this spin-torque, the ability to induce persistent oscillations of a nanomagnet by applying a dc current, has previously been reported only for spatially uniform nanomagnets. Here we demonstrate that a quintessentially nonuniform magnetic structure, a magnetic vortex, isolated within a nanoscale spin valve structure, can be excited into persistent microwave-frequency oscillations by a spin-polarized dc current. Comparison to micromagnetic simulations leads to identification of the oscillations with a precession of the vortex core. The oscillations, which can be obtained in essentially zero magnetic field, exhibit linewidths that can be narrower than 300 kHz, making these highly compact spin-torque vortex oscillator devices potential candidates for microwave signal-processing applications, and a powerful new tool for fundamental studies of vortex dynamics in magnetic nanostructures.
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Submitted 9 February, 2007;
originally announced February 2007.
