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Optical Response of Strained- and Unstrained-Silicon Cold-Electron Bolometers
Authors:
T. L. R. Brien,
P. A. R. Ade,
P. S. Barry,
C. J. Dunscombe,
D. R. Leadley,
D. V. Morozov,
M. Myronov,
E. H. C. Parker,
M. J. Prest,
M. Prunnila,
R. V. Sudiwala,
T. E. Whall,
P. D. Mauskopf
Abstract:
We describe the optical characterisation of two silicon cold-electron bolometers each consisting of a small ($32 \times 14~\mathrm{μm}$) island of degenerately doped silicon with superconducting aluminium contacts. Radiation is coupled into the silicon absorber with a twin-slot antenna designed to couple to 160-GHz radiation through a silicon lens.The first device has a highly doped silicon absorb…
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We describe the optical characterisation of two silicon cold-electron bolometers each consisting of a small ($32 \times 14~\mathrm{μm}$) island of degenerately doped silicon with superconducting aluminium contacts. Radiation is coupled into the silicon absorber with a twin-slot antenna designed to couple to 160-GHz radiation through a silicon lens.The first device has a highly doped silicon absorber, the second has a highly doped strained-silicon absorber.Using a novel method of cross-correlating the outputs from two parallel amplifiers, we measure noise-equivalent powers of $3.0 \times 10^{-16}$ and $6.6 \times 10^{-17}~\mathrm{W\,Hz^{-1/2}}$ for the control and strained device, respectively, when observing radiation from a 77-K source. In the case of the strained device, the noise-equivalent power is limited by the photon noise.
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Submitted 10 March, 2016;
originally announced March 2016.
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A Strained Silicon Cold Electron Bolometer using Schottky Contacts
Authors:
T. L. R. Brien,
P. A. R. Ade,
P. S. Barry,
C. Dunscombe,
D. R. Leadley,
D. V. Morozov,
M. Myronov,
E. H. C. Parker,
M. Prunnila,
M. J. Prest,
R. V. Sudiwala,
T. E. Whall,
P. D. Mauskopf
Abstract:
We describe optical characterisation of a Strained Silicon Cold Electron Bolometer (CEB), operating on a $350~\mathrm{mK}$ stage, designed for absorption of millimetre-wave radiation. The silicon Cold Electron Bolometer utilises Schottky contacts between a superconductor and an n++ doped silicon island to detect changes in the temperature of the charge carriers in the silicon, due to variations in…
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We describe optical characterisation of a Strained Silicon Cold Electron Bolometer (CEB), operating on a $350~\mathrm{mK}$ stage, designed for absorption of millimetre-wave radiation. The silicon Cold Electron Bolometer utilises Schottky contacts between a superconductor and an n++ doped silicon island to detect changes in the temperature of the charge carriers in the silicon, due to variations in absorbed radiation. By using strained silicon as the absorber, we decrease the electron-phonon coupling in the device and increase the responsivity to incoming power. The strained silicon absorber is coupled to a planar aluminium twin-slot antenna designed to couple to $160~\mathrm{GHz}$ and that serves as the superconducting contacts. From the measured optical responsivity and spectral response, we calculate a maximum optical efficiency of $50~\%$ for radiation coupled into the device by the planar antenna and an overall noise equivalent power (NEP), referred to absorbed optical power, of $1.1 \times 10^{-16}~\mathrm{\mbox{W Hz}^{-1/2}}$ when the detector is observing a $300~\mathrm{K}$ source through a $4~\mathrm{K}$ throughput limiting aperture. Even though this optical system is not optimised we measure a system noise equivalent temperature difference (NETD) of $6~\mathrm{\mbox{mK Hz}^{-1/2}}$. We measure the noise of the device using a cross-correlation of time stream data measured simultaneously with two junction field-effect transistor (JFET) amplifiers, with a base correlated noise level of $300~\mathrm{\mbox{pV Hz}^{-1/2}}$ and find that the total noise is consistent with a combination of photon noise, current shot noise and electron-phonon thermal noise.
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Submitted 31 July, 2014; v1 submitted 8 July, 2014;
originally announced July 2014.
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Superconducting platinum silicide for electron cooling in silicon
Authors:
M J Prest,
J S Richardson-Bullock,
Q T Zhao,
J T Muhonen,
D Gunnarsson,
M Prunnila,
V A Shah,
T E Whall,
E H C Parker,
D R Leadley
Abstract:
We demonstrate electron cooling in silicon using platinum silicide as a superconductor contact to selectively remove the highest energy electrons. The superconducting critical temperature of bulk PtSi is reduced from around 1 K to 0.79 K using a thin film (10 nm) of PtSi, which enhances cooling performance at lower temperatures and enables electron cooling to be demonstrated from 100 mK to 50 mK.
We demonstrate electron cooling in silicon using platinum silicide as a superconductor contact to selectively remove the highest energy electrons. The superconducting critical temperature of bulk PtSi is reduced from around 1 K to 0.79 K using a thin film (10 nm) of PtSi, which enhances cooling performance at lower temperatures and enables electron cooling to be demonstrated from 100 mK to 50 mK.
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Submitted 16 May, 2014;
originally announced May 2014.
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Strain enhanced electron cooling in a degenerately doped semiconductor
Authors:
M. J. Prest,
J. T. Muhonen,
M. Prunnila,
D. Gunnarsson,
V. A. Shah,
J. S. Richardson-Bullock,
A. Dobbie,
M. Myronov,
R. J. H. Morris,
T. E. Whall,
E. H. C. Parker,
D. R. Leadley
Abstract:
Enhanced electron cooling is demonstrated in a strained-silicon/superconductor tunnel junction refrigerator of volume 40 um^3. The electron temperature is reduced from 300 mK to 174 mK, with the enhancement over an unstrained silicon control (300 mK to 258 mK) being attributed to the smaller electron-phonon coupling in the strained case. Modeling and the resulting predictions of silicon-based cool…
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Enhanced electron cooling is demonstrated in a strained-silicon/superconductor tunnel junction refrigerator of volume 40 um^3. The electron temperature is reduced from 300 mK to 174 mK, with the enhancement over an unstrained silicon control (300 mK to 258 mK) being attributed to the smaller electron-phonon coupling in the strained case. Modeling and the resulting predictions of silicon-based cooler performance are presented. Further reductions in the minimum temperature are expected if the junction sub-gap leakage and tunnel resistance can be reduced. However, if only tunnel resistance is reduced, Joule heating is predicted to dominate.
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Submitted 18 November, 2011; v1 submitted 2 November, 2011;
originally announced November 2011.
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Strain control of electron-phonon energy loss rate in many-valley semiconductors
Authors:
J. T. Muhonen,
M. J. Prest,
M. Prunnila,
D. Gunnarsson,
V. A. Shah,
A. Dobbie,
M. Myronov,
R. J. H. Morris,
T. E. Whall,
E. H. C. Parker,
D. R. Leadley
Abstract:
We demonstrate significant modification of the electron-phonon energy loss rate in a many-valley semiconductor system due to lattice mismatch induced strain. We show that the thermal conductance from the electron system to the phonon bath in strained n + Si, at phonon temperatures between 200 mK and 450 mK, is more than an order of magnitude lower than that for a similar unstrained sample.
We demonstrate significant modification of the electron-phonon energy loss rate in a many-valley semiconductor system due to lattice mismatch induced strain. We show that the thermal conductance from the electron system to the phonon bath in strained n + Si, at phonon temperatures between 200 mK and 450 mK, is more than an order of magnitude lower than that for a similar unstrained sample.
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Submitted 31 January, 2011;
originally announced January 2011.
