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Kinetics of structural changes on GaSb(001) singular and vicinal surfaces during the UHV annealing
Authors:
A. V. Vasev,
M. A. Putyato,
V. V. Preobrazhenskii,
A. K. Bakarov,
A. I. Toropov
Abstract:
The dynamics of processes of antimony desorption was investigated on the singular and vicinal GaSb(001) surface by RHEED method. The role of the terraces edges was determined during antimony evaporation in Langmuir desorption mode. It is shown that the structural transition (2x5) -> (1x3) is a complex of two transitions - order -> disorder and disorder -> order. The influence of the degree of surf…
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The dynamics of processes of antimony desorption was investigated on the singular and vicinal GaSb(001) surface by RHEED method. The role of the terraces edges was determined during antimony evaporation in Langmuir desorption mode. It is shown that the structural transition (2x5) -> (1x3) is a complex of two transitions - order -> disorder and disorder -> order. The influence of the degree of surface miscut from the singular face on the dimension of the transition (2x5) -> DO was studied. The activation energies of structural transitions ex(2x5) -> (2x5), (2x5) -> DO and DO -> (1x3) on singular and vicinal faces GaSb(001) were determined.
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Submitted 30 January, 2018;
originally announced January 2018.
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Kinetics of (2x4) -> (3x1(6)) structural changes on GaAs(001) surfaces during the UHV annealing
Authors:
A. V. Vasev,
M. A. Putyato,
V. V. Preobrazhenskii
Abstract:
The peculiarities of superstructural transition (2x4) -> (3x1(6)) on the GaAs(001) surface were studied by the RHEED method in the conditions initiated by a sharp change of the arsenic flux. The specular beam intensities RHEED picture dependences on time were obtained during the transition. The measurement results were analyzed within the JMAK (Johnson - Melh - Avrami - Kolmogorov) kinetic model.…
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The peculiarities of superstructural transition (2x4) -> (3x1(6)) on the GaAs(001) surface were studied by the RHEED method in the conditions initiated by a sharp change of the arsenic flux. The specular beam intensities RHEED picture dependences on time were obtained during the transition. The measurement results were analyzed within the JMAK (Johnson - Melh - Avrami - Kolmogorov) kinetic model. It was established that the process of structural rearrangement proceeds in two stages and it is realized through the state of intermediate disordering, domains with different reconstructions being coexistent on the surface. The activation energies and phase transition velocities were determined for each of the stages. The procedure for precise determination of GaAs(001) surface temperature using the features of the a(2x4)->DO transition process kinetic was proposed. The results of this work allow us to broaden our understanding of the reconstruction transitions mechanisms. This information has a key (fundamental and applied) nature for the technologies of epitaxial growth of multilayer heterostructures, where the interface planarity and the sharpness of composition profile are of particular importance.
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Submitted 4 March, 2018; v1 submitted 30 January, 2018;
originally announced January 2018.
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Some aspects of diffracted waves formation at RHEED on a reconstructed crystal face
Authors:
A. V. Vasev,
M. A. Putyato,
V. V. Preobrazhenskii
Abstract:
The evolution of RHEED reflexes intensity during reconstructed transitions characterizes (often implicitly) reconstructed surface state peculiarities. The approaches of a correct RHEED data interpretation, aimed at obtaining information about reconstructed transitions kinetics, are considered in the present work. In particular, the nature of RHEED reflexes formation, depending on such parameters a…
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The evolution of RHEED reflexes intensity during reconstructed transitions characterizes (often implicitly) reconstructed surface state peculiarities. The approaches of a correct RHEED data interpretation, aimed at obtaining information about reconstructed transitions kinetics, are considered in the present work. In particular, the nature of RHEED reflexes formation, depending on such parameters as the average size of reconstructed domains and number of such domains per area unit, is analyzed within the kinematic approximation of the diffraction theory. This geometrical description is a convenient and effective (productive) way of analyzing reconstructed transitions mechanisms and parameters. The transformation of the functional dependence between the measured values (RHEED reflexes intensity picture) and the degree of surface coverage by reconstruction domains, at a change of these domains average size and distribution density, is shown. This work provides the community with a useful framework for such type of theoretical studies.
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Submitted 15 December, 2017;
originally announced December 2017.
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Proximity-induced superconductivity within the InAs/GaSb edge conducting state
Authors:
A. Kononov,
V. A. Kostarev,
B. R. Semyagin,
V. V. Preobrazhenskii,
M. A. Putyato,
E. A. Emelyanov,
E. V. Deviatov
Abstract:
We experimentally investigate Andreev transport through the interface between an indium superconductor and the edge of the InAs/GaSb bilayer. To cover all possible regimes of InAs/GaSb spectrum, we study samples with 10 nm, 12 nm, and 14 nm thick InAs quantum wells. For the trivial case of a direct band insulator in 10~nm samples, differential resistance demonstrates standard Andreev reflection. F…
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We experimentally investigate Andreev transport through the interface between an indium superconductor and the edge of the InAs/GaSb bilayer. To cover all possible regimes of InAs/GaSb spectrum, we study samples with 10 nm, 12 nm, and 14 nm thick InAs quantum wells. For the trivial case of a direct band insulator in 10~nm samples, differential resistance demonstrates standard Andreev reflection. For InAs/GaSb structures with band inversion (12~nm and 14 nm samples), we observe distinct low-energy structures, which we regard as direct evidence for the proximity-induced superconductivity within the current-carrying edge state. For 14~nm InAs well samples, we additionally observe mesoscopic-like resistance fluctuations, which are subjected to threshold suppression in low magnetic fields.
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Submitted 18 December, 2017; v1 submitted 31 October, 2017;
originally announced October 2017.
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Interlayer current near the edge of an InAs/GaSb double quantum well in proximity with a superconductor
Authors:
A. Kononov,
S. V. Egorov,
N. Titova,
B. R. Semyagin,
V. V. Preobrazhenskii,
M. A. Putyato,
E. A. Emelyanov,
E. V. Deviatov
Abstract:
We investigate charge transport through the junction between a niobium superconductor and the edge of a two-dimensional electron-hole bilayer, realized in an InAs/GaSb double quantum well. For the transparent interface with a superconductor, we demonstrate that the junction resistance is determined by the interlayer charge transfer near the interface. From an analysis of experimental $I-V$ curves…
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We investigate charge transport through the junction between a niobium superconductor and the edge of a two-dimensional electron-hole bilayer, realized in an InAs/GaSb double quantum well. For the transparent interface with a superconductor, we demonstrate that the junction resistance is determined by the interlayer charge transfer near the interface. From an analysis of experimental $I-V$ curves we conclude that the proximity induced superconductivity efficiently couples electron and hole layers at low currents. The critical current demonstrates periodic dependence on the in-plane magnetic field, while it is monotonous for the field which is normal to the bilayer plane.
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Submitted 25 October, 2016;
originally announced October 2016.
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Specular Andreev reflection at the edge of an InAs/GaSb double quantum well with band inversion
Authors:
A. Kononov,
S. V. Egorov,
V. A. Kostarev,
B. R. Semyagin,
V. V. Preobrazhenskii,
M. A. Putyato,
E. A. Emelyanov,
E. V. Deviatov
Abstract:
We experimentally investigate transport through the side junction between a niobium superconductor and the mesa edge of a two-dimensional system, realized in an InAs/GaSb double quantum well with band inversion. We demonstrate, that different transport regimes can be achieved by variation of the mesa step. We observe anomalous behavior of Andreev reflection within a finite low-bias interval, which…
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We experimentally investigate transport through the side junction between a niobium superconductor and the mesa edge of a two-dimensional system, realized in an InAs/GaSb double quantum well with band inversion. We demonstrate, that different transport regimes can be achieved by variation of the mesa step. We observe anomalous behavior of Andreev reflection within a finite low-bias interval, which is invariant for both transport regimes. We connect this behavior with the transition from retro- (at low biases) to specular (at high ones) Andreev reflection channels in an InAs/GaSb double quantum well with band inversion.
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Submitted 27 May, 2016;
originally announced May 2016.
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Kinetics of exciton photoluminescence in type-II semiconductor superlattices
Authors:
L. S. Braginsky,
M. Yu. Zaharov,
A. M. Gilinsky,
V. V. Preobrazhenskii,
M. A. Putyato,
K. S. Zhuravlev
Abstract:
The exciton decay rate at a rough interface in type-II semiconductor superlattices is investigated. It is shown that the possibility of recombination of indirect excitons at a plane interface essentially affects kinetics of the exciton photoluminescence at a rough interface. This happens because of strong correlation between the exciton recombination at the plane interface and at the roughness.…
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The exciton decay rate at a rough interface in type-II semiconductor superlattices is investigated. It is shown that the possibility of recombination of indirect excitons at a plane interface essentially affects kinetics of the exciton photoluminescence at a rough interface. This happens because of strong correlation between the exciton recombination at the plane interface and at the roughness. Expressions that relate the parameters of the luminescence kinetics with statistical characteristics of the rough interface are obtained. The mean height and length of roughnesses in GaAs/AlAs superlattices are estimated from the experimental data.
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Submitted 24 September, 2000;
originally announced September 2000.
