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Dipolar coupled core-shell perpendicular shape anisotropy MTJ with enhanced write speed and reduced cross-talk
Authors:
N. Caçoilo,
L. D. Buda-Prejbeanu,
B. Dieny,
O. Fruchart,
I. L. Prejbeanu
Abstract:
The concept of Perpendicular Shape-Anisotropy Spin-Transfer-Torque Magnetic Random-Access Memory tackles the downsize scalability limit of conventional ultrathin magnetic tunnel junctions (MTJ) below sub-20 nm technological nodes. This concept uses a thicker storage layer with a vertical aspect ratio, enhancing the thermal stability factor thanks to the favorable contribution of the shape anisotro…
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The concept of Perpendicular Shape-Anisotropy Spin-Transfer-Torque Magnetic Random-Access Memory tackles the downsize scalability limit of conventional ultrathin magnetic tunnel junctions (MTJ) below sub-20 nm technological nodes. This concept uses a thicker storage layer with a vertical aspect ratio, enhancing the thermal stability factor thanks to the favorable contribution of the shape anisotropy. However, the increased aspect ratio comes with an increase in switching time under applied voltage and the cross-over to non-uniform reversal mechanism at higher aspect ratio, limiting the gain in scalability. Additionally, the larger volume of the magnetic cell significantly increases the stray field acting on the neighboring devices compared to thin MTJs. In this work, we propose the use of a dipolar-coupled core-shell system as a storage layer. This improves both bottlenecks, as predicted by micromagnetic simulations for magnetisation reversal, and a macrospin model to estimate the stray field in a dense array.
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Submitted 8 December, 2023;
originally announced December 2023.
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Field-free all-optical switching and electrical read-out of Tb/Co-based magnetic tunnel junctions
Authors:
D. Salomoni,
Y. Peng,
L. Farcis,
S. Auffret,
M. Hehn,
G. Malinowski,
S. Mangin,
B. Dieny,
L. D. Buda-Prejbeanu,
R. C. Sousa,
I. L. Prejbeanu
Abstract:
Switching of magnetic tunnel junction using femto-second laser enables a possible path for THz frequency memory operation, which means writing speeds 2 orders of magnitude faster than alternative electrical approaches based on spin transfer or spin orbit torque. In this work we demonstrate successful field-free 50fs single laser pulse driven magnetization reversal of [Tb/Co] based storage layer in…
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Switching of magnetic tunnel junction using femto-second laser enables a possible path for THz frequency memory operation, which means writing speeds 2 orders of magnitude faster than alternative electrical approaches based on spin transfer or spin orbit torque. In this work we demonstrate successful field-free 50fs single laser pulse driven magnetization reversal of [Tb/Co] based storage layer in a perpendicular magnetic tunnel junction. The nanofabricated magnetic tunnel junction devices have an optimized bottom reference electrode and show Tunnel Magnetoresistance Ratio values (TMR) up to 74\% after patterning down to sub-100nm lateral dimensions. Experiments on continuous films reveal peculiar reversal patterns of concentric rings with opposite magnetic directions, above certain threshold fluence. These rings have been correlated to patterned device switching probability as a function of the applied laser fluence. Moreover, the magnetization reversal is independent on the duration of the laser pulse. According to our macrospin model, the underlying magnetization reversal mechanism can be attributed to an in-plane reorientation of the magnetization due to a fast reduction of the out-of-plane uniaxial anisotropy. These aspects are of great interest both for the physical understanding of the switching phenomenon and their consequences for all-optical-switching memory devices, since they allow for a large fluence operation window with high resilience to pulse length variability.
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Submitted 24 May, 2023;
originally announced May 2023.
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In plane reorientation induced single laser pulse magnetization reversal in rare-earth based multilayer
Authors:
Y. Peng,
D. Salomoni,
G. Malinowski,
W. Zhang,
J. Hohlfeld,
L. D. Buda-Prejbeanu,
J. Gorchon,
M. Vergès,
J. X. Lin,
R. C. Sousa,
I. L. Prejbeanu,
S. Mangin,
M. Hehn
Abstract:
Single Pulse All Optical Helicity Independent Switching (AO-HIS) represents the ability to reverse the magnetic moment of a nanostructure using a femtosecond single laser pulse. It is an ultrafast method to manipulate magnetization without the use of any applied field. Since the first switching experiments carried on GdFeCo ferrimagnetic systems, single pulse AO-HIS has been restricted for a while…
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Single Pulse All Optical Helicity Independent Switching (AO-HIS) represents the ability to reverse the magnetic moment of a nanostructure using a femtosecond single laser pulse. It is an ultrafast method to manipulate magnetization without the use of any applied field. Since the first switching experiments carried on GdFeCo ferrimagnetic systems, single pulse AO-HIS has been restricted for a while to Gd-based alloys or Gd/FM bilayers where FM is a ferromagnetic layer. Only recently has AO-HIS been extended to a few other materials: MnRuGa ferrimagnetic Heusler alloys and Tb/Co multilayers with a very specific range of thickness and composition. Here, we demonstrate that single pulse AO-HIS observed in Tb/Co results from a different mechanism than the one for Gd based samples and that it can be obtained for a large range of rare earth-transition metal (RE-TM) multilayers, making this phenomenon much more general. Surprisingly, in this large family of (RE-TM) multilayer systems, the threshold fluence for switching is observed to be independent of the pulse duration, up to at least 12 ps. Moreover, at high laser intensities, concentric ring domain structures are induced, unveiling multiple fluence thresholds. These striking switching features, which are in contrast to those of AO-HIS in GdFeCo alloys, concomitant with the demonstration of an in-plane reorientation of the magnetization, point towards an intrinsic precessional reversal mechanism. Our results allow expanding the variety of materials with tunable magnetic properties that can be integrated in complex heterostructures and provide a pathway to engineer materials for future applications based on all-optical control of magnetic order.
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Submitted 26 December, 2022;
originally announced December 2022.
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Optical Switching in Tb/Co-Multilayer Based Nanoscale Magnetic Tunnel Junctions
Authors:
Sucheta Mondal,
Debanjan Polley,
Akshay Pattabi,
Jyotirmoy Chatterjee,
David Salomoni,
Luis Aviles-Felix,
Aurélien Olivier,
Miguel Rubio-Roy,
Bernard Diény,
Liliana Daniela Buda Prejbeanu,
Ricardo Sousa,
Ioan Lucian Prejbeanu,
Jeffrey Bokor
Abstract:
Magnetic tunnel junctions (MTJs) are elementary units of magnetic memory devices. For high-speed and low-power data storage and processing applications, fast reversal by an ultrashort laser pulse is extremely important. We demonstrate optical switching of Tb/Comultilayer-based nanoscale MTJs by combining optical writing and electrical read-out methods. A 90 fs-long laser pulse switches the magneti…
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Magnetic tunnel junctions (MTJs) are elementary units of magnetic memory devices. For high-speed and low-power data storage and processing applications, fast reversal by an ultrashort laser pulse is extremely important. We demonstrate optical switching of Tb/Comultilayer-based nanoscale MTJs by combining optical writing and electrical read-out methods. A 90 fs-long laser pulse switches the magnetization of the storage layer (SL). The change in magnetoresistance between the SL and a reference layer (RL) is probed electrically across the tunnel barrier. Single-shot switching is demonstrated by varying the cell diameter from 300 nm to 20 nm. The anisotropy, magnetostatic coupling, and switching probability exhibit cell-size dependence. By suitable association of laser fluence and magnetic field, successive commutation between high-resistance and low-resistance states is achieved. The switching dynamics in a continuous film is probed with the magneto-optical Kerr effect technique. Our experimental findings provide strong support for the growing interest in ultrafast spintronic devices.
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Submitted 18 December, 2022;
originally announced December 2022.
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Off-axis electron holography for the direct visualization of perpendicular shape anisotropy in nano-scale 3D magnetic random-access-memory devices
Authors:
Trevor P. Almeida,
Alvaro Palomino,
Steven Lequeux,
Victor Boureau,
Olivier Fruchart,
Ioan Lucian Prejbeanu,
Bernard Dieny,
David Cooper
Abstract:
Perpendicular shape anisotropy (PSA) and double magnetic tunnel junctions (DMTJ) offer practical solutions to downscale spin-transfer-torque Magnetic Random-Access Memory (STT-MRAM) beyond 20 nm technology nodes, whilst retaining their thermal stability and reducing critical currents applied. However, as these modern devices become smaller and three-dimensionally (3D) complex, our understanding of…
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Perpendicular shape anisotropy (PSA) and double magnetic tunnel junctions (DMTJ) offer practical solutions to downscale spin-transfer-torque Magnetic Random-Access Memory (STT-MRAM) beyond 20 nm technology nodes, whilst retaining their thermal stability and reducing critical currents applied. However, as these modern devices become smaller and three-dimensionally (3D) complex, our understanding of their functional magnetic behavior is often indirect, relying on magnetoresistance measurements and micromagnetic modelling. In this paper, we review recent work that was performed on these structures using a range of advanced electron microscopy techniques, focusing on aspects specific to the 3D and nanoscale nature of such elements. We present the methodology for the systematic transfer of individual SST-MRAM nano-pillars from large-scale arrays to image their magnetic configurations directly using off-axis electron holography. We show that improved phase sensitivity through stacking of electron holograms can be used to image subtle variations in DMTJs and the thermal stability of < 20 nm PSA-STT-MRAM nano-pillars during in-situ heating. The experimental practicalities, benefits and limits of using electron holography for analysis of MRAM devices are discussed, unlocking practical pathways for direct imaging of the functional magnetic performance of these systems with high spatial resolution and sensitivity.
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Submitted 21 April, 2022;
originally announced April 2022.
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Direct observation of the perpendicular shape anisotropy and thermal stability of p-STT-MRAM nano-pillars
Authors:
Trevor P. Almeida,
Steven Lequeux,
Alvaro Palomino,
Ricardo C. Sousa,
Olivier Fruchart,
Ioan Lucian Prejbeanu,
Bernard Dieny,
Aurélien Masseboeuf,
David Cooper
Abstract:
Perpendicular shape anisotropy (PSA) offers a practical solution to downscale spin-transfer torque Magnetic Random-Access Memory (STT-MRAM) beyond the sub-20 nm technology node whilst retaining thermal stability of the storage layer magnetization. However, our understanding of the thermomagnetic behavior of PSA-STT-MRAM is often indirect, relying on magnetoresistance measurements and micromagnetic…
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Perpendicular shape anisotropy (PSA) offers a practical solution to downscale spin-transfer torque Magnetic Random-Access Memory (STT-MRAM) beyond the sub-20 nm technology node whilst retaining thermal stability of the storage layer magnetization. However, our understanding of the thermomagnetic behavior of PSA-STT-MRAM is often indirect, relying on magnetoresistance measurements and micromagnetic modelling. Here, the magnetism of a FeCoB / NiFe PSA-STT-MRAM nano-pillar is investigated using off-axis electron holography, providing spatially resolved magnetic information as a function of temperature, which has been previously inaccessible. Magnetic induction maps reveal the micromagnetic configuration of the NiFe storage layer (60 nm high, 20 nm diameter), confirming the PSA induced by its 3:1 aspect ratio. In-situ heating demonstrates that the PSA of the FeCoB / NiFe composite storage layer is maintained up to at least 250 degrees centigrade, and direct quantitative measurements reveal the very moderate decrease of magnetic induction with temperature. Hence, this study shows explicitly that PSA provides significant stability in STT-MRAM applications that require reliable performance over a range of operating temperatures.
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Submitted 2 February, 2022;
originally announced February 2022.
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Size-dependent enhancement of passive microwave rectification in magnetic tunnel junctions with perpendicular magnetic anisotropy
Authors:
A. Sidi El Valli,
V. Iurchuk,
G. Lezier,
I. Bendjeddou,
R. Lebrun,
N. Lamard,
A. Litvinenko,
J. Langer,
J. Wrona,
L. Vila,
R. Sousa,
I. L. Prejbeanu,
B. Dieny,
U. Ebels
Abstract:
Spintronic rf detectors were demonstrated, recently, for energy harvesting and wireless communication at low input power. Here we report on the optimization of the rectified output dc voltage using magnetic tunnel junctions (MTJ) with strong perpendicular anisotropy (PMA) of both the polarizing and the free layer. The magnetization of the polarizing layer is fixed out of plane, while the free laye…
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Spintronic rf detectors were demonstrated, recently, for energy harvesting and wireless communication at low input power. Here we report on the optimization of the rectified output dc voltage using magnetic tunnel junctions (MTJ) with strong perpendicular anisotropy (PMA) of both the polarizing and the free layer. The magnetization of the polarizing layer is fixed out of plane, while the free layer thickness is adjusted so that its magnetization orientation changes from in plane to out of plane. The rectification dc output voltage lies in the mV range for moderate rf powers, with a signal to noise ratio of 10 to 100 for Prf = -25dBm. It shows a strong dependence on the dimensions of the MTJ: it increases by a factor of 5 to 6 when reducing the diameter from 150nm to 20nm. This enhancement can be doubled when reducing the FL thickness from 1.8nm to 1.6nm. This dimensional enhancement is attributed to the change of the effective anisotropy of the excited free layer, and the MTJ resistance. The results are of interest for the design of spintronic based rf detectors with optimized sensitivity.
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Submitted 27 October, 2021;
originally announced October 2021.
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Observation of magnetic helicoidal dichroism with extreme ultraviolet light vortices
Authors:
Mauro Fanciulli,
Matteo Pancaldi,
Emanuele Pedersoli,
Mekha Vimal,
David Bresteau,
Martin Luttmann,
Dario De Angelis,
Primož Rebernik Ribič,
Benedikt Rösner,
Christian David,
Carlo Spezzani,
Michele Manfredda,
Ricardo Sousa,
Ioan-Lucian Prejbeanu,
Laurent Vila,
Bernard Dieny,
Giovanni De Ninno,
Flavio Capotondi,
Maurizio Sacchi,
Thierry Ruchon
Abstract:
We report on the experimental evidence of magnetic helicoidal dichroism, observed in the interaction of an extreme ultraviolet vortex beam carrying orbital angular momentum with a magnetic vortex. Numerical simulations based on classical electromagnetic theory show that this dichroism is based on the interference of light modes with different orbital angular momenta, which are populated after the…
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We report on the experimental evidence of magnetic helicoidal dichroism, observed in the interaction of an extreme ultraviolet vortex beam carrying orbital angular momentum with a magnetic vortex. Numerical simulations based on classical electromagnetic theory show that this dichroism is based on the interference of light modes with different orbital angular momenta, which are populated after the interaction between the light phase chirality and the magnetic topology. This observation gives insight into the interplay between orbital angular momentum and magnetism, and sets the framework for the development of new analytical tools to investigate ultrafast magnetization dynamics.
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Submitted 25 March, 2021;
originally announced March 2021.
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All-optical spin switching probability in [Tb/Co] multilayers
Authors:
Luis Avilés-Félix,
Louis Farcis,
Zebin **,
Laura Álvaro-Gómez,
Gunqiao Li,
Kihiro T. Yamada,
Andrei Kirilyuk,
Aleksey V. Kimel,
Theo Rasing,
Bernard Dieny,
Ricardo C. Sousa,
Ioan-Lucian Prejbeanu,
Liliana D. Buda-Prejbeanu
Abstract:
Since the first experimental observation of all-optical switching phenomena, intensive research has been focused on finding suitable magnetic systems that can be integrated as storage elements within spintronic devices and whose magnetization can be controlled through ultra-short single laser pulses. We report here atomistic spin simulations of all-optical switching in multilayered structures alte…
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Since the first experimental observation of all-optical switching phenomena, intensive research has been focused on finding suitable magnetic systems that can be integrated as storage elements within spintronic devices and whose magnetization can be controlled through ultra-short single laser pulses. We report here atomistic spin simulations of all-optical switching in multilayered structures alternating n monolayers of Tb and m monolayers of Co. By using a two temperature model, we numerically calculate the thermal variation of the magnetization of each sublattice as well as the magnetization dynamics of [Tbn/Com] multilayers upon incidence of a single laser pulse. In particular, the condition to observe thermally-induced magnetization switching is investigated upon varying systematically both the composition of the sample (n,m) and the laser fluence. The samples with one monolayer of Tb as [Tb1/Co2] and [Tb1/Co3] are showing thermally induced magnetization switching above a fluence threshold. The reversal mechanism is mediated by the residual magnetization of the Tb lattice while the Co is fully demagnetized in agreement with the models developed for ferrimagnetic alloys. The switching is however not fully deterministic but the error rate can be tuned by the dam** parameter. Increasing the number of monolayers the switching becomes completely stochastic. The intermixing at the Tb/Co interfaces appears to be a promising way to reduce the stochasticity. These results predict for the first time the possibility of TIMS in [Tb/Co] multilayers and suggest the occurrence of sub-picosecond magnetization reversal using single laser pulses.
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Submitted 8 March, 2021;
originally announced March 2021.
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Magnetization reversal driven by spin-transfer-torque in perpendicular shape anisotropy magnetic tunnel junctions
Authors:
N. Caçoilo,
S. Lequeux,
B. M. S. Teixeira,
B. Dieny,
R. C. Sousa,
N. A. Sobolev,
O. Fruchart,
I. L. Prejbeanu,
L. D. Buda-Prejbeanu
Abstract:
The concept of perpendicular shape anisotropy spin-transfer torque magnetic random-access memory (PSA-STT-MRAM) consists in increasing the storage layer thickness to values comparable to the cell diameter, to induce a perpendicular shape anisotropy in the magnetic storage layer. Making use of that contribution, the downsize scalability of the STT-MRAM may be extended towards sub-20 nm technologica…
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The concept of perpendicular shape anisotropy spin-transfer torque magnetic random-access memory (PSA-STT-MRAM) consists in increasing the storage layer thickness to values comparable to the cell diameter, to induce a perpendicular shape anisotropy in the magnetic storage layer. Making use of that contribution, the downsize scalability of the STT-MRAM may be extended towards sub-20 nm technological nodes, thanks to a reinforcement of the thermal stability factor $Δ$. Although the larger storage layer thickness improves $Δ$, it is expected to negatively impact the writing current and switching time. Hence, optimization of the cell dimensions (diameter, thickness) is of utmost importance for attaining a sufficiently high $Δ$ while kee** a moderate writing current. Micromagnetic simulations were carried out for different pillar thicknesses of fixed lateral size 20 nm. The switching time and the reversal mechanism were analysed as a function of the applied voltage and aspect-ratio (AR) of the storage layer. For AR $<$ 1, the magnetization reversal resembles a macrospin-like mechanism, while for AR $>$ 1 a non-coherent reversal is observed, characterized by the nucleation of a transverse domain wall at the ferromagnet/insulator interface which then propagates along the vertical axis of the pillar. It was further observed that the inverse of the switching time is linearly dependent on the applied voltage. This study was extended to sub-20 nm width with a value of $Δ$ around 80. It was observed that the voltage necessary to reverse the magnetic layer increases as the lateral size is reduced, accompanied with a transition from macrospin-reversal to a buckling-like reversal at high aspect-ratios.
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Submitted 21 April, 2021; v1 submitted 12 May, 2020;
originally announced May 2020.
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Realizing an Isotropically Coercive Magnetic Layer for Memristive Applications by Analogy to Dry Friction
Authors:
Marco Mansueto,
Antoine Chavent,
Stephane Auffret,
Isabelle Joumard,
Jayshankar Nath,
Ioan M. Miron,
Ursula Ebels,
Ricardo C. Sousa,
Liliana D. Buda-Prejbeanu,
Ioan L. Prejbeanu,
Bernard Dieny
Abstract:
We investigate the possibility of realizing a spintronic memristive device based on the dependence of the tunnel conductance on the relative angle between the magnetization of the two magnetic electrodes in in-plane magnetized tunnel junctions. For this, it is necessary to design a free layer whose magnetization can be stabilized along several or even any in-plane direction between the parallel an…
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We investigate the possibility of realizing a spintronic memristive device based on the dependence of the tunnel conductance on the relative angle between the magnetization of the two magnetic electrodes in in-plane magnetized tunnel junctions. For this, it is necessary to design a free layer whose magnetization can be stabilized along several or even any in-plane direction between the parallel and the antiparallel magnetic configurations. We experimentally show that this can be achieved by exploiting antiferromagnet-ferromagnet exchange interactions in a regime where the antiferromagnet is thin enough to induce enhanced coercivity and no exchange bias. The frustration of exchange interactions at the interfaces due to competing ferro- and antiferromagnetic interactions is at the origin of an isotropic dissipation mechanism yielding isotropic coercivity. From a modeling point of view, it is shown that this isotropic dissipation can be described by a dry friction term in the Landau-Lifshitz-Gilbert equation. The influence of this dry friction term on the magnetization dynamics of an in-plane magnetized layer submitted to a rotating in-plane field is investigated both analytically and numerically. The possibility to control the free layer magnetization orientation in an in-plane magnetized magnetic tunnel junction by using the spin transfer torque from an additional perpendicular polarizer is also investigated through macrospin simulation. It is shown that the memristor function can be achieved by the injection of current pulses through the stack in the presence of an in-plane static field transverse to the reference layer magnetization, the aim of which is to limit the magnetization rotation between 0° and 180°.
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Submitted 19 March, 2020;
originally announced March 2020.
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Opportunities and challenges for spintronics in the microelectronic industry
Authors:
Bernard Dieny,
Ioan Lucian Prejbeanu,
Kevin Garello,
Pietro Gambardella,
Paulo Freitas,
Ronald Lehndorff,
Wolfgang Raberg,
Ursula Ebels,
Sergej O Demokritov,
Johan Akerman,
Alina Deac,
Philipp Pirro,
Christoph Adelmann,
Abdelmadjid Anane,
Andrii V Chumak,
Atsufumi Hiroata,
Stephane Mangin,
Mehmet Cengiz Onbasli,
Massimo d Aquino,
Guillaume Prenat,
Giovanni Finocchio,
Luis Lopez Diaz,
Roy Chantrell,
Oksana Chubykalo Fesenko,
Paolo Bortolotti
Abstract:
Spin-based electronics has evolved into a major field of research that broadly encompasses different classes of materials, magnetic systems, and devices. This review describes recent advances in spintronics that have the potential to impact key areas of information technology and microelectronics. We identify four main axes of research: nonvolatile memories, magnetic sensors, microwave devices, an…
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Spin-based electronics has evolved into a major field of research that broadly encompasses different classes of materials, magnetic systems, and devices. This review describes recent advances in spintronics that have the potential to impact key areas of information technology and microelectronics. We identify four main axes of research: nonvolatile memories, magnetic sensors, microwave devices, and beyond-CMOS logic. We discuss state-of-the-art developments in these areas as well as opportunities and challenges that will have to be met, both at the device and system level, in order to integrate novel spintronic functionalities and materials in mainstream microelectronic platforms.
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Submitted 28 August, 2019;
originally announced August 2019.
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Highly thermally stable sub-20nm magnetic random-access memory based on perpendicular shape anisotropy
Authors:
N. Perrissin,
S. Lequeux,
N. Strelkov,
L. Vila,
L. Buda-Prejbeanu,
S. Auffret,
R. C. Sousa,
I. L. Prejbeanu,
B. Dieny
Abstract:
A new approach to increase the downsize scalability of perpendicular STT-MRAM is presented. It consists in significantly increasing the thickness of the storage layer in out-of-plane magnetized tunnel junctions (pMTJ) as compared to conventional pMTJ in order to induce a perpendicular shape anisotropy (PSA) in this layer. This PSA is obtained by depositing a thick ferromagnetic (FM) layer on top o…
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A new approach to increase the downsize scalability of perpendicular STT-MRAM is presented. It consists in significantly increasing the thickness of the storage layer in out-of-plane magnetized tunnel junctions (pMTJ) as compared to conventional pMTJ in order to induce a perpendicular shape anisotropy (PSA) in this layer. This PSA is obtained by depositing a thick ferromagnetic (FM) layer on top of an MgO/FeCoB based magnetic tunnel junction (MTJ) so that the thickness of the storage layer becomes of the order or larger than the diameter of the MTJ pillar. In contrast to conventional spin transfer torque magnetic random access memory (STT-MRAM) wherein the demagnetizing energy opposes the interfacial perpendicular magnetic anisotropy (iPMA), in these novel memory cells, both PSA and iPMA contributions favor out-of-plane orientation of the storage layer magnetization. Using thicker storage layers in these PSA-STT-MRAM has several advantages. Thanks to the PSA, very high and easily tunable thermal stability factors can be achieved, even down to sub-10 nm diameters. Moreover, low dam** material can be used for the thick FM material thus leading to a reduction of the write current. The paper describes this new PSA-STT-MRAM concept, practical realization of such memory arrays, magnetic characterization demonstrating thermal stability factor above 200 for MTJs as small as 8nm in diameter and possibility to maintain thermal stability factor above 60 down to 4nm diameter.
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Submitted 7 March, 2018;
originally announced March 2018.
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Steady State and Dynamics of Joule Heating in Magnetic Tunnel Junctions Observed via the Temperature Dependence of RKKY Coupling
Authors:
A. Chavent,
C. Ducruet,
C. Portemont,
L. Vila,
J. Alvarez-Hérault,
R. Sousa,
I. L. Prejbeanu,
B. Dieny
Abstract:
Understanding quantitatively the heating dynamics in magnetic tunnel junctions (MTJ) submitted to current pulses is very important in the context of spin-transfer-torque magnetic random access memory development. Here we provide a method to probe the heating of MTJ using the RKKY coupling of a synthetic ferrimagnetic storage layer as a thermal sensor. The temperature increase versus applied bias v…
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Understanding quantitatively the heating dynamics in magnetic tunnel junctions (MTJ) submitted to current pulses is very important in the context of spin-transfer-torque magnetic random access memory development. Here we provide a method to probe the heating of MTJ using the RKKY coupling of a synthetic ferrimagnetic storage layer as a thermal sensor. The temperature increase versus applied bias voltage is measured thanks to the decrease of the spin-flop field with temperature. This method allows distinguishing spin transfer torque (STT) effects from the influence of temperature on the switching field. The heating dynamics is then studied in real-time by probing the conductance variation due to spin-flop rotation during heating. This approach provides a new method for measuring fast heating in spintronic devices, particularly magnetic random access memory (MRAM) using thermally assisted or spin transfer torque writing.
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Submitted 27 September, 2016;
originally announced September 2016.
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The 2014 Magnetism Roadmap
Authors:
Robert L. Stamps,
Stephan Breitkreutz,
Johan Åkerman,
Andrii V. Chumak,
YoshiChika Otani,
Gerrit E. W. Bauer,
Jan-Ulrich Thiele,
Martin Bowen,
Sara A. Majetich,
Mathias Kläui,
Ioan Lucian Prejbeanu,
Bernard Dieny,
Nora M. Dempsey,
Burkard Hillebrands
Abstract:
Magnetism is a very fascinating and dynamic field. Especially in the last 30 years it has experienced many major advances in the full range from novel fundamental phenomena to new products. Applications such as hard disk drives and magnetic sensors are part of our daily life, and new applications, such as in non-volatile computer random access memory, are expected to surface shortly. Thus it is ti…
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Magnetism is a very fascinating and dynamic field. Especially in the last 30 years it has experienced many major advances in the full range from novel fundamental phenomena to new products. Applications such as hard disk drives and magnetic sensors are part of our daily life, and new applications, such as in non-volatile computer random access memory, are expected to surface shortly. Thus it is timely for describing the current status, and current and future challenges in the form of a Roadmap article. This 2014 Magnetism Roadmap provides a view on several selected, currently very active innovative developments. It consists of 12 sections, each written by an expert in the field and addressing a specific subject, with strong emphasize on future potential. This Roadmap cannot cover the entire field. We have selected several highly relevant areas without attempting to provide a full review - a future update will have room for more topics. The scope covers mostly nano-magnetic phenomena and applications, where surfaces and interfaces provide additional functionality. New developments in fundamental topics such as interacting nano-elements, novel magnon-based spintronics concepts, spin-orbit torques and spin-caloric phenomena are addressed. New materials, such as organic magnetic materials and permanent magnets are covered. New applications are presented such as nano-magnetic logic, non-local and domain-wall based devices, heat-assisted magnetic recording, magnetic random access memory, and applications in biotechnology. May the Roadmap serve as a guideline for future emerging research directions in modern magnetism.
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Submitted 23 October, 2014;
originally announced October 2014.
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Modulating spin transfer torque switching dynamics with two orthogonal spin-polarizers by varying the cell aspect ratio
Authors:
B. Lacoste,
M. Marins de Castro,
T. Devolder,
R. C. Sousa,
L. D. Buda-Prejbeanu,
S. Auffret,
U. Ebels,
C. Ducruet,
I. L. Prejbeanu,
L. Vila,
B. Rodmacq,
B. Dieny
Abstract:
We study in-plane magnetic tunnel junctions with additional perpendicular polarizer for subnanosecond-current-induced switching memories. The spin-transfer-torque switching dynamics was studied as a function of the cell aspect ratio both experimentally and by numerical simulations using the macrospin model. We show that the anisotropy field plays a significant role in the dynamics, along with the…
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We study in-plane magnetic tunnel junctions with additional perpendicular polarizer for subnanosecond-current-induced switching memories. The spin-transfer-torque switching dynamics was studied as a function of the cell aspect ratio both experimentally and by numerical simulations using the macrospin model. We show that the anisotropy field plays a significant role in the dynamics, along with the relative amplitude of the two spin-torque contributions. This was confirmed by micromagnetic simulations. Real-time measurements of the reversal were performed with samples of low and high aspect ratio. For low aspect ratios, a precessional motion of the magnetization was observed and the effect of temperature on the precession coherence was studied. For high aspect ratios, we observed magnetization reversals in less than 1 ns for high enough current densities, the final state being controlled by the current direction in the magnetic tunnel junction cell.
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Submitted 3 December, 2014; v1 submitted 23 July, 2014;
originally announced July 2014.
