Phyllosilicates as earth-abundant layered materials for electronics and optoelectronics: Prospects and challenges in their ultrathin limit
Authors:
Ingrid D. Barcelos,
Raphaela de Oliveira,
Gabriel R. Schleder,
Matheus J. S. Matos,
Raphael Longuinhos,
Jenaina Ribeiro-Soares,
Ana Paula M. Barboza,
Mariana C. Prado,
Elisângela S. Pinto,
Yara Galvão Gobato,
Hélio Chacham,
Bernardo R. A. Neves,
Alisson R. Cadore
Abstract:
Phyllosilicate minerals are an emerging class of naturally occurring layered insulators with large bandgap energy that have gained attention from the scientific community. This class of lamellar materials has been recently explored at the ultrathin two-dimensional level due to their specific mechanical, electrical, magnetic, and optoelectronic properties, which are crucial for engineering novel de…
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Phyllosilicate minerals are an emerging class of naturally occurring layered insulators with large bandgap energy that have gained attention from the scientific community. This class of lamellar materials has been recently explored at the ultrathin two-dimensional level due to their specific mechanical, electrical, magnetic, and optoelectronic properties, which are crucial for engineering novel devices (including heterostructures). Due to these properties, phyllosilicates minerals can be considered promising low-cost nanomaterials for future applications. In this Perspective article, we will present relevant features of these materials for their use in potential 2D-based electronic and optoelectronic applications, also discussing some of the major challenges in working with them.
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Submitted 24 August, 2023;
originally announced August 2023.
Optimization of graphene dry etching conditions via combined microscopic and spectroscopic analysis
Authors:
Mariana C. Prado,
Deep Jariwala,
Tobin J. Marks,
Mark C. Hersam
Abstract:
Single-layer graphene structures and devices are commonly defined using reactive ion etching and plasma etching with O2 or Ar as the gaseous etchants. Although optical microscopy and Raman spectroscopy are widely used to determine the appropriate duration of dry etching, additional characterization with atomic force microscopy (AFM) reveals that residual graphene and/or etching byproducts persist…
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Single-layer graphene structures and devices are commonly defined using reactive ion etching and plasma etching with O2 or Ar as the gaseous etchants. Although optical microscopy and Raman spectroscopy are widely used to determine the appropriate duration of dry etching, additional characterization with atomic force microscopy (AFM) reveals that residual graphene and/or etching byproducts persist beyond the point where the aforementioned methods suggest complete graphene etching. Recognizing that incomplete etching may have deleterious effects on devices and/or downstream processing, AFM characterization is used here to determine optimal etching conditions that eliminate graphene dry etching residues.
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Submitted 19 May, 2013;
originally announced May 2013.
