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Skyrmionic device for three dimensional magnetic field sensing enabled by spin-orbit torques
Authors:
Sabri Koraltan,
Rahul Gupta,
Reshma Peremadathil Pradeep,
Fabian Kammerbauer,
Iryna Kononenko,
Klemens Prügl,
Michael Kirsch,
Bernd Aichner,
Santiago Helbig,
Florian Bruckner,
Claas Abert,
Andrada Oana Mandru,
Armin Satz,
Gerhard Jakob,
Hans Josef Hug,
Mathias Kläui,
Dieter Suess
Abstract:
Magnetic skyrmions are topologically protected local magnetic solitons that are promising for storage, logic or general computing applications. In this work, we demonstrate that we can use a skyrmion device based on [W/CoFeB/MgO] 1 0 multilayers for three-dimensional magnetic field sensing enabled by spin-orbit torques (SOT). We stabilize isolated chiral skyrmions and stripe domains in the multila…
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Magnetic skyrmions are topologically protected local magnetic solitons that are promising for storage, logic or general computing applications. In this work, we demonstrate that we can use a skyrmion device based on [W/CoFeB/MgO] 1 0 multilayers for three-dimensional magnetic field sensing enabled by spin-orbit torques (SOT). We stabilize isolated chiral skyrmions and stripe domains in the multilayers, as shown by magnetic force microscopy images and micromagnetic simulations. We perform magnetic transport measurements to show that we can sense both in-plane and out-of-plane magnetic fields by means of a differential measurement scheme in which the symmetry of the SOT leads to cancelation of the DC offset. With the magnetic parameters obtained by vibrating sample magnetometry and ferromagnetic resonance measurements, we perform finite-temperature micromagnetic simulations, where we investigate the fundamental origin of the sensing signal. We identify the topological transformation between skyrmions, stripes and type-II bubbles that leads to a change in the resistance that is read-out by the anomalous Hall effect. Our study presents a novel application for skyrmions, where a differential measurement sensing concept is applied to quantify external magnetic fields paving the way towards more energy efficient applications in skyrmionics based spintronics.
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Submitted 25 March, 2024;
originally announced March 2024.
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Single device offset-free magnetic field sensing principle with tunable sensitivity and linear range based on spin-orbit-torques
Authors:
Sabri Koraltan,
Christin Schmitt,
Florian Bruckner,
Claas Abert,
Klemens Prügl,
Michael Kirsch,
Rahul Gupta,
Sebastian Zeilinger,
Joshua M. Salazar-Mejía,
Milan Agrawal,
Johannes Güttinger,
Armin Satz,
Gerhard Jakob,
Mathias Kläui,
Dieter Suess
Abstract:
We propose a novel device concept using spin-orbit-torques to realize a magnetic field sensor, where we eliminate the sensor offset using a differential measurement concept. We derive a simple analytical formulation for the sensor signal and demonstrate its validity with numerical investigations using macrospin simulations. The sensitivity and the measurable linear sensing range in the proposed co…
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We propose a novel device concept using spin-orbit-torques to realize a magnetic field sensor, where we eliminate the sensor offset using a differential measurement concept. We derive a simple analytical formulation for the sensor signal and demonstrate its validity with numerical investigations using macrospin simulations. The sensitivity and the measurable linear sensing range in the proposed concept can be tuned by either varying the effective magnetic anisotropy or by varying the magnitude of the injected currents. We show that undesired perturbation fields normal to the sensitive direction preserve the zero-offset property and only slightly modulate the sensitivity of the proposed sensor. Higher-harmonics voltage analysis on a Hall cross experimentally confirms the linearity and tunability via current strength. Additionally, the sensor exhibits a non-vanishing offset in the experiment which we attribute to the anomalous Nernst effect.
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Submitted 23 March, 2023;
originally announced March 2023.
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Comparison of Sensitivity and Low Frequency Noise Contributions in GMR and TMR Spin Valve Sensors with a Vortex State Free Layer
Authors:
Herbert Weitensfelder,
Hubert Brueckl,
Armin Satz,
Klemens Pruegl,
Juergen Zimmer,
Sebastian Luber,
Wolfgang Raberg,
Claas Abert,
Florian Bruckner,
Anton Bachleitner-Hofmann,
Roman Windl,
Dieter Suess
Abstract:
Magnetoresistive spin valve sensors based on the giant- (GMR) and tunnelling- (TMR) magnetoresisitve effect with a flux-closed vortex state free layer design are compared by means of sensitivity and low frequency noise. The vortex state free layer enables high saturation fields with negligible hysteresis, making it attractive for applications with a high dynamic range. The measured GMR devices com…
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Magnetoresistive spin valve sensors based on the giant- (GMR) and tunnelling- (TMR) magnetoresisitve effect with a flux-closed vortex state free layer design are compared by means of sensitivity and low frequency noise. The vortex state free layer enables high saturation fields with negligible hysteresis, making it attractive for applications with a high dynamic range. The measured GMR devices comprise lower pink noise and better linearity in resistance but are less sensitive to external magnetic fields than TMR sensors. The results show a comparable detectivity at low frequencies and a better performance of the TMR minimum detectable field at frequencies in the white noise limit.
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Submitted 18 April, 2018;
originally announced April 2018.
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Topologically Protected Vortex Structures to Realize Low-Noise Magnetic Sensors
Authors:
Dieter Suess,
Anton Bachleitner-Hofmann,
Armin Satz,
Herbert Weitensfelder,
Christoph Vogler,
Florian Bruckner,
Claas Abert,
Klemens Prügl,
Jürgen Zimmer,
Christian Huber,
Sebastian Luber,
Wolfgang Raberg,
Thomas Schrefl,
Hubert Brückl
Abstract:
Micromagnetic sensors play a major role towards the miniaturization in the industrial society. The adoption of new and emerging sensor technologies like anisotropic magnetoresistance (AMR), giant magnetoresistance (GMR) and tunnel magnetoresistance (TMR) sensors are mainly driven by their integrability and enhanced sensitivity. At the core of such sensors, a microstructured ferromagnetic thin film…
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Micromagnetic sensors play a major role towards the miniaturization in the industrial society. The adoption of new and emerging sensor technologies like anisotropic magnetoresistance (AMR), giant magnetoresistance (GMR) and tunnel magnetoresistance (TMR) sensors are mainly driven by their integrability and enhanced sensitivity. At the core of such sensors, a microstructured ferromagnetic thin film element transduces the magnetic signal. Such elements usually switch via multi-domain, C- or S-shaped magnetization states and, therefore, often exhibit an open non-linear hysteresis curve. Linearity and hysteretic effects, as well as magnetic noise are key features in the improvement of such sensors. Here, we report on the physical origin of these disturbing factors and the inherent connection of noise and hysteresis. Critical noise sources are identified by means of analytic and micromagnetic models. The dominant noise source is due to irreproducible magnetic switching of the transducer element at external fields close to the Stoner Wohlfarth switching field. Furthermore, a solution is presented to overcome these limiting factors: a disruptive sensor design is proposed and analyzed which realizes a topologically protected magnetic vortex state in the transducer element. Compared to state of the art sensors the proposed sensor layout has negligible hysteresis, a linear regime about an order of magnitude higher and lower magnetic noise making the sensor ideal candidate for applications ranging from automotive industry to biological application.
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Submitted 19 December, 2017;
originally announced December 2017.
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Diffusion based degradation mechanisms in giant magnetoresistive spin valves
Authors:
M. Hawraneck,
J. Zimmer,
W. Raberg,
K. Pruegl,
S. Schmitt,
T. Bever,
S. Flege,
L. Alff
Abstract:
Spin valve systems based on the giant magnetoresistive (GMR) effect as used for example in hard disks and automotive applications consist of several functional metallic thin film layers. We have identified by secondary ion mass spectrometry (SIMS) two main degradation mechanisms: One is related to oxygen diffusion through a protective cap layer, and the other one is interdiffusion directly at th…
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Spin valve systems based on the giant magnetoresistive (GMR) effect as used for example in hard disks and automotive applications consist of several functional metallic thin film layers. We have identified by secondary ion mass spectrometry (SIMS) two main degradation mechanisms: One is related to oxygen diffusion through a protective cap layer, and the other one is interdiffusion directly at the functional layers of the GMR stack. By choosing a suitable material as cap layer (TaN), the oxidation effect can be suppressed.
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Submitted 18 June, 2008;
originally announced June 2008.
