A Two-Kind-Boson Mixture Honeycomb Hamiltonian of Bloch Exciton-Polaritons
Authors:
Haining Pan,
K. Winkler,
Mats Powlowski,
Ming Xie,
A. Schade,
M. Emmerling,
M. Kamp,
S. Klemt,
C. Schneider,
Tim Byrnes,
S. Hoefling,
Na Young Kim
Abstract:
The electronic bandstructure of a solid is a collection of allowed bands separated by forbidden bands, revealing the geometric symmetry of the crystal structures. Comprehensive knowledge of the bandstructure with band parameters explains intrinsic physical, chemical and mechanical properties of the solid. Here we report the artificial polaritonic bandstructures of two-dimensional honeycomb lattice…
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The electronic bandstructure of a solid is a collection of allowed bands separated by forbidden bands, revealing the geometric symmetry of the crystal structures. Comprehensive knowledge of the bandstructure with band parameters explains intrinsic physical, chemical and mechanical properties of the solid. Here we report the artificial polaritonic bandstructures of two-dimensional honeycomb lattices for microcavity exciton-polaritons using GaAs semiconductors in the wide-range detuning values, from cavity-photon-like (red-detuned) to exciton-like (blue-detuned) regimes. In order to understand the experimental bandstructures and their band parameters, such as gap energies, bandwidths, hop** integrals and density of states, we originally establish a polariton band theory within an augmented plane wave method with two-kind-bosons, cavity photons trapped at the lattice sites and freely moving excitons. In particular, this two-kind-band theory is absolutely essential to elucidate the exciton effect in the bandstructures of blue-detuned exciton-polaritons, where the flattened exciton-like dispersion appears at larger in-plane momentum values captured in our experimental access window. We reach an excellent agreement between theory and experiments in all detuning values.
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Submitted 1 May, 2021;
originally announced May 2021.
Temperature dependent angular dispersions of surface acoustic waves on GaAs
Authors:
Mats Powlowski,
Francois Sfigakis,
Na Young Kim
Abstract:
We measure the phase velocities of surface acoustic waves (SAWs) propagating at different crystal orientations on (001)-cut GaAs substrates and their temperature dependance. We design and fabricate sets of interdigital transducers (IDTs) to induce 4 μm SAWs via the inverse piezoelectric (PZE) effect between the PZE [110] direction (set as θ = 0°) and the non-PZE [100] direction (θ = 45°) on GaAs.…
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We measure the phase velocities of surface acoustic waves (SAWs) propagating at different crystal orientations on (001)-cut GaAs substrates and their temperature dependance. We design and fabricate sets of interdigital transducers (IDTs) to induce 4 μm SAWs via the inverse piezoelectric (PZE) effect between the PZE [110] direction (set as θ = 0°) and the non-PZE [100] direction (θ = 45°) on GaAs. We also prepare ZnO film sputtered GaAs substrates in order to launch SAWs efficiently by IDTs even in the non-PZE direction. We quantify acoustic velocities between 1.4 and 300 K from the resonant frequencies in the S11 parameter using a network analyzer. We observe parabolic velocity-temperature trends at all θ-values both on GaAs and ZnO/GaAs substrates. Below 200 K, in ZnO/GaAs substrates slower SAW modes appear around the [110] direction, which are unseen at RT.
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Submitted 1 May, 2021;
originally announced May 2021.
