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Integration of through-sapphire substrate machining with superconducting quantum processors
Authors:
Narendra Acharya,
Robert Armstrong,
Yashwanth Balaji,
Kevin G Crawford,
James C Gates,
Paul C Gow,
Oscar W Kennedy,
Renuka Devi Pothuraju,
Kowsar Shahbazi,
Connor D Shelly
Abstract:
We demonstrate a sapphire machining process integrated with intermediate-scale quantum processors. The process allows through-substrate electrical connections, necessary for low-frequency mode-mitigation, as well as signal-routing, which are vital as quantum computers scale in qubit number, and thus dimension. High-coherence qubits are required to build fault-tolerant quantum computers and so mate…
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We demonstrate a sapphire machining process integrated with intermediate-scale quantum processors. The process allows through-substrate electrical connections, necessary for low-frequency mode-mitigation, as well as signal-routing, which are vital as quantum computers scale in qubit number, and thus dimension. High-coherence qubits are required to build fault-tolerant quantum computers and so material choices are an important consideration when develo** a qubit technology platform. Sapphire, as a low-loss dielectric substrate, has shown to support high-coherence qubits. In addition, recent advances in material choices such as tantalum and titanium-nitride, both deposited on a sapphire substrate, have demonstrated qubit lifetimes exceeding 0.3 ms. However, the lack of any process equivalent of deep-silicon etching to create through-substrate-vias in sapphire, or to inductively shunt large dies, has limited sapphire to small-scale processors, or necessitates the use of chiplet architecture. Here, we present a sapphire machining process that is compatible with high-coherence qubits. This technique immediately provides a means to scale QPUs with integrated mode-mitigation, and provides a route toward the development of through-sapphire-vias, both of which allow the advantages of sapphire to be leveraged as well as facilitating the use of sapphire-compatible materials for large-scale QPUs.
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Submitted 14 June, 2024;
originally announced June 2024.
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Electron-beam annealing of Josephson junctions for frequency tuning of quantum processors
Authors:
Yashwanth Balaji,
Narendra Acharya,
Robert Armstrong,
Kevin G. Crawford,
Sergey Danilin,
Thomas Dixon,
Oscar W. Kennedy,
Renuka Devi Pothuraju,
Kowsar Shahbazi,
Connor D. Shelly
Abstract:
Superconducting qubits are a promising route to achieving large-scale quantum computers. A key challenge in realising large-scale superconducting quantum processors involves mitigating frequency collisions. In this paper, we present an approach to tuning fixed-frequency qubits with the use of an electron beam to locally anneal the Josephson junction. We demonstrate the ability to both increase and…
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Superconducting qubits are a promising route to achieving large-scale quantum computers. A key challenge in realising large-scale superconducting quantum processors involves mitigating frequency collisions. In this paper, we present an approach to tuning fixed-frequency qubits with the use of an electron beam to locally anneal the Josephson junction. We demonstrate the ability to both increase and decrease the junction barrier resistance. The technique shows an improvement in wafer scale frequency targetting by assessing the frequency collisions in our qubit architecture. Coherence measurements are also done to evaluate the performance before and after tuning. The tuning process utilises a standard electron beam lithography system, ensuring reproducibility and implementation by any group capable of fabricating these Josephson junctions. This technique has the potential to significantly improve the performance of large-scale quantum computing systems, thereby paving the way for the future of quantum computing.
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Submitted 27 February, 2024;
originally announced February 2024.
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Angle and Polarization Selective Spontaneous Emission in Dye-doped Metal/Insulator/Metal Nanocavities
Authors:
Vincenzo Caligiuri,
Giulia Biffi,
Milan Palei,
Beatriz Martin-Garcia,
Renuka Devi Pothuraju,
Yann Bretonnière,
Roman Krahne
Abstract:
Directing and polarizing the emission of a fluorophore is of fundamental importance in the perspective of novel photonic sources based on emerging nano-emitter technologies. These two tasks are usually accomplished by a sophisticated and demanding structuring of the optical environment in which the emitter is immersed, or by non-trivial chemical engineering of its geometry and/or band structure. I…
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Directing and polarizing the emission of a fluorophore is of fundamental importance in the perspective of novel photonic sources based on emerging nano-emitter technologies. These two tasks are usually accomplished by a sophisticated and demanding structuring of the optical environment in which the emitter is immersed, or by non-trivial chemical engineering of its geometry and/or band structure. In this paper, the wavelength and polarization selective spontaneous emission from a dye-embedded in a Metal/Insulator/Metal (d-MIM) nanocavity is demonstrated. A push-pull chromophore with large Stokes shift is embedded in a MIM cavity whose resonances are tuned with the spectral emission band of the chromophore. Angular and polarization resolved spectroscopy experiments reveal that the radiated field is reshaped according to the angular dispersion of the nanocavity, and that its spectrum manifests two bands with different polarization corresponding to the p- and s-polarized resonances of the cavity. The d-MIM cavities are a highly versatile system for polarization and wavelength division multiplexing applications at the nanoscale, as well as for near-field focused emission and nanolenses.
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Submitted 21 April, 2020;
originally announced April 2020.