Showing 1–10 of 10 results for author: Portal, J -

Ultra-High-density 3D vertical RRAM with stacked JunctionLess nanowires for In-Memory-Computing applications

Authors: M. Ezzadeen, D. Bosch, B. Giraud, S. Barraud, J. -P. Noel, D. Lattard, J. Lacord, J. -M. Portal, F. Andrieu

Abstract: The Von-Neumann bottleneck is a clear limitation for data-intensive applications, bringing in-memory computing (IMC) solutions to the fore. Since large data sets are usually stored in nonvolatile memory (NVM), various solutions have been proposed based on emerging memories, such as OxRAM, that rely mainly on area hungry, one transistor (1T) one OxRAM (1R) bit-cell. To tackle this area issue, while… ▽ More The Von-Neumann bottleneck is a clear limitation for data-intensive applications, bringing in-memory computing (IMC) solutions to the fore. Since large data sets are usually stored in nonvolatile memory (NVM), various solutions have been proposed based on emerging memories, such as OxRAM, that rely mainly on area hungry, one transistor (1T) one OxRAM (1R) bit-cell. To tackle this area issue, while kee** the programming control provided by 1T1R bit-cell, we propose to combine gate-all-around stacked junctionless nanowires (1JL) and OxRAM (1R) technology to create a 3-D memory pillar with ultrahigh density. Nanowire junctionless transistors have been fabricated, characterized, and simulated to define current conditions for the whole pillar. Finally, based on Simulation Program with Integrated Circuit Emphasis (SPICE) simulations, we demonstrated successfully scouting logic operations up to three-pillar layers, with one operand per layer. △ Less

Submitted 30 November, 2020; originally announced December 2020.

Fine structure of phonon replicas in a tunnel spectrum of a GaAs quantum well

Authors: V. G. Krishtop, V. G. Popov, M. Henini, Yu. Krupko, J. -C. Portal

Abstract: A fine structure of phonon replicas in the current-voltage characteristic of a resonant-tunneling diode has been investigated experimentally. A detailed study of the diode I-V curves in magnetic fields of different orientations has allowed to determine the origin of the features in the fine structure. The voltage positions of the features are shown to coincide with calculated that in the frame of… ▽ More A fine structure of phonon replicas in the current-voltage characteristic of a resonant-tunneling diode has been investigated experimentally. A detailed study of the diode I-V curves in magnetic fields of different orientations has allowed to determine the origin of the features in the fine structure. The voltage positions of the features are shown to coincide with calculated that in the frame of two models: LO-phonon assisted tunneling and resonant tunneling of polarons. △ Less

Submitted 2 February, 2014; originally announced February 2014.

Comments: 6 pages, 7 figures

Coulomb pseudogap in elastic 2D-2D electron tunneling in a quantizing magnetic field

Authors: V. G. Popov, O. N. Makarovskii, V. Renard, L. Eaves, J. -C. Portal

Abstract: The electron tunneling is experimentally studied between two-dimensional electron gases (2DEGs) formed in a single-doped-barrier heterostructure in the magnetic fields directed perpendicular to the 2DEGs planes. It is well known that the quantizing magnetic field induces the Coulomb pseudogap suppressing the electron tunneling at Fermi level. In this paper we firstly present the experimental res… ▽ More The electron tunneling is experimentally studied between two-dimensional electron gases (2DEGs) formed in a single-doped-barrier heterostructure in the magnetic fields directed perpendicular to the 2DEGs planes. It is well known that the quantizing magnetic field induces the Coulomb pseudogap suppressing the electron tunneling at Fermi level. In this paper we firstly present the experimental results revealing the pseudogap in the electron tunneling assisted by elastic electron scattering on disorder. △ Less

Submitted 22 August, 2008; originally announced August 2008.

Comments: 5 pages, 2 figures, Proc. of the ICPS-2008

Boundary-mediated electron-electron interactions in quantum point contacts

Authors: Vincent Thomas Francois Renard, O. A. Tkachenko, V. A. Tkachenko, T. Ota, N. Kumada, J. -C. Portal, Y. Hirayama

Abstract: An unusual increase of the conductance with temperature is observed in clean quantum point contacts for conductances larger than 2e^2/h. At the same time a positive magnetoresistance arises at high temperatures. A model accounting for electron-electron interactions mediated by bound- aries (scattering on Friedel oscillations) qualitatively describes the observation. It is supported by numerical… ▽ More An unusual increase of the conductance with temperature is observed in clean quantum point contacts for conductances larger than 2e^2/h. At the same time a positive magnetoresistance arises at high temperatures. A model accounting for electron-electron interactions mediated by bound- aries (scattering on Friedel oscillations) qualitatively describes the observation. It is supported by numerical simulation at zero magnetic field. △ Less

Submitted 7 April, 2008; v1 submitted 25 March, 2008; originally announced March 2008.

Comments: To appear in Phys. Rev. Lett Updated version of Fig. 2

Journal ref: Physical Review Letters 100 (2008) 186801

Experimental investigation of the ratchet effect in a two-dimensional electron system with broken spatial inversion symmetry

Authors: S. Sassine, Yu. Krupko, J. -C. Portal, Z. D. Kvon, R. Murali, K. P. Martin, G. Hill, A. D. Wieck

Abstract: We report on experimental evidence of directed electron transport, induced by external linear-polarized microwave irradiation, in a two-dimensional spatially-periodic asymmetrical system called ratchet. The broken spatial symmetry was introduced in a high mobility two-dimensional electron gas based on AlGaAs/GaAs heterojunction, by patterning an array of artificial semi-discs-shaped antidots. We… ▽ More We report on experimental evidence of directed electron transport, induced by external linear-polarized microwave irradiation, in a two-dimensional spatially-periodic asymmetrical system called ratchet. The broken spatial symmetry was introduced in a high mobility two-dimensional electron gas based on AlGaAs/GaAs heterojunction, by patterning an array of artificial semi-discs-shaped antidots. We show that the direction of the transport is efficiently changed by microwave polarization. The dependence of the effect on magnetic field and temperature is investigated. This represents a significant step towards the realization of new microwave detectors and current generators. △ Less

Submitted 28 February, 2008; originally announced February 2008.

Inducement and suppression of Coulomb effects in elastic 2D-2D electron tunnelling in a quantizing magnetic field

Authors: V. G. Popov, Yu. V. Dubrovskii, J. -C. Portal

Abstract: Tunnelling between two-dimensional electron systems has been studied in the magnetic field perpendicular to the systems planes. The satellite conductance peaks of the main resonance have been observed due to the electron tunnelling assisted by the elastic scattering on impurities in the barrier layer. These peaks are shown to shift to the higher voltage due to the Coulomb pseudogap in the interm… ▽ More Tunnelling between two-dimensional electron systems has been studied in the magnetic field perpendicular to the systems planes. The satellite conductance peaks of the main resonance have been observed due to the electron tunnelling assisted by the elastic scattering on impurities in the barrier layer. These peaks are shown to shift to the higher voltage due to the Coulomb pseudogap in the intermediate fields. In the high magnetic fields the pseudogap shift is disappeared. △ Less

Submitted 9 July, 2007; originally announced July 2007.

Comments: 15th Int. Symp. "Nanostructures: Physics and Technology" Novosibirsk, Russia, June 25-29, 2007 Ioffe Institute

Electron transport through antidot superlattices in $Si/SiGe$ heterostructures: new magnetoresistance resonances in lattices with large diameter antidots

Authors: E. B. Olshanetsky, Vincent Thomas Francois Renard, Z. D. Kvon, J. -C. Portal, J. -M. Hartmann

Abstract: In the present work we have investigated the transport properties in a number of Si/SiGe samples with square antidot lattices of different periods. In samples with lattice periods equal to 700 nm and 850 nm we have observed the conventional low-field commensurability magnetoresistance peaks consistent with the previous observations in GaAs/AlGaAs and Si/SiGe samples with antidot lattices. In sam… ▽ More In the present work we have investigated the transport properties in a number of Si/SiGe samples with square antidot lattices of different periods. In samples with lattice periods equal to 700 nm and 850 nm we have observed the conventional low-field commensurability magnetoresistance peaks consistent with the previous observations in GaAs/AlGaAs and Si/SiGe samples with antidot lattices. In samples with a 600 nm lattice period a new series of well-developed magnetoresistance oscillations has been found beyond the last commensurability peak which are supposed to originate from periodic skip** orbits encircling an antidot with a particular number of bounds. △ Less

Submitted 21 September, 2006; originally announced September 2006.

Comments: To appear in EuroPhys. Lett

Journal ref: Europhysics Letters (EPL) 76, 4 (2006) 657

Quantum corrections to the conductivity and Hall coefficient of a two-dimensional electron gas in a dirty AlGaAs/GaAs/AlGaAs quantum well: from the diffusive to the ballistic regime

Authors: V. T. Renard, I. V. Gornyi, O. A. Tkachenko, V. A. Tkachenko, Z. D. Kvon, E. B. Olshanetsky, A. I. Toropov, J. -C. Portal

Abstract: We report an experimental study of quantum conductivity corrections in a low mobility, high density two-dimensional electron gas in a AlGaAs/GaAs/AlGaAs quantum well in a wide temperature range (1.5K - 110K). This temperature range covers both the diffusive and the ballistic interaction regimes for our samples. It has been therefore possible to study the crossover between these regimes for both… ▽ More We report an experimental study of quantum conductivity corrections in a low mobility, high density two-dimensional electron gas in a AlGaAs/GaAs/AlGaAs quantum well in a wide temperature range (1.5K - 110K). This temperature range covers both the diffusive and the ballistic interaction regimes for our samples. It has been therefore possible to study the crossover between these regimes for both the longitudinal conductivity and the Hall effect. We perform a parameter free comparison of our experimental data for the longitudinal conductivity at zero magnetic field, the Hall coefficient, and the magnetoresistivity to the recent theories of interaction-induced corrections to the transport coefficients. A quantitative agreement between these theories and our experimental results has been found. △ Less

Submitted 19 May, 2005; originally announced May 2005.

Comments: extended version of cond-mat/0412463

Journal ref: Physical Review B 72 (2005) 075313

Excited two-dimensional magnetopolaron states in quantum well of resonant tunnel junction

Authors: D. Yu. Ivanov, M. V. Chukalina, E. G. Takhtamirov, Yu. V. Dubrovskii, L. Eaves, V. A. Volkov, E. E. Vdovin, J. -C. Portal, D. K. Maude, M. Henini, G. Hill

Abstract: Tunnel spectroscopy is used to probe the electronic structure in GaAs quantum well of resonant tunnel junction over wide range of energies and magnetic fields normal to layers. Spin degenerated high Landau levels ($N=2\div7$) are found to be drastically renormalised near energies when the longitudinal optical-phonon ($\hbarω_{LO}$) and cyclotron energy ($\hbarω_{C}$) are satisfied condition… ▽ More Tunnel spectroscopy is used to probe the electronic structure in GaAs quantum well of resonant tunnel junction over wide range of energies and magnetic fields normal to layers. Spin degenerated high Landau levels ($N=2\div7$) are found to be drastically renormalised near energies when the longitudinal optical-phonon ($\hbarω_{LO}$) and cyclotron energy ($\hbarω_{C}$) are satisfied condition $\hbarω_{LO}=m\hbarω_{C}$, where $m=1,2,3$. This renormalisation is attributed to formation of resonant magnetopolarons, i.e. mixing of high index Landau levels by strong interaction of electrons at Landau level states with LO-phonons. △ Less

Submitted 13 January, 2005; originally announced January 2005.

Comments: 4 pages, 3 eps figures, revtex4

Development of the tunnelling gap in disordered 2D electron system with magnetic field: observation of the soft-hard gap transition

Authors: Yu. V. Dubrovskii, V. A. Volkov, L. Eaves, E. E. Vdovin, O. N. Makarovskii, J. -C. Portal, M. Henini, G. Hill

Abstract: Magnetic field suppression of the tunneling between disordered 2D electron systems in GaAs around zero bias voltage has been studied. Magnetic field B normal to the layers induces a dip in the tunneling density of states (TDOS) centered precisely at the Fermi level, i.e. soft tunneling gap. The soft gap has a linear form with finite TDOS diminishing with B at the Fermi level. Driven by magnetic… ▽ More Magnetic field suppression of the tunneling between disordered 2D electron systems in GaAs around zero bias voltage has been studied. Magnetic field B normal to the layers induces a dip in the tunneling density of states (TDOS) centered precisely at the Fermi level, i.e. soft tunneling gap. The soft gap has a linear form with finite TDOS diminishing with B at the Fermi level. Driven by magnetic field the transition soft-hard gap has been observed, i.e. the TDOS vanishes in the finite energy window around Fermi level at B>13 T. △ Less

Submitted 6 January, 2005; v1 submitted 5 January, 2005; originally announced January 2005.

Comments: Revtex4, 6 pages, 5 Postscript figures, to be submitted to Physical Review B