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Room Temperature Microsecond Coherence of Silicon Dangling Bonds
Authors:
J. Möser,
H. Popli,
T. H. Tennahewa,
T. Biktagirov,
J. Behrends,
W. Akhtar,
H. Malissa,
C. Boehme,
W. G. Schmidt,
U. Gerstmann,
K. Lips
Abstract:
Paramagnetic point defects in silicon provide qubits that could open up pathways towards silicon-technology based, low-cost, room-temperature (RT) quantum sensing. The silicon dangling bond (db) is a natural candidate, given its sub-nanometer localization and direct involvement in spin-dependent charge-carrier recombination, allowing for electrical spin readout. In crystalline silicon, however, ra…
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Paramagnetic point defects in silicon provide qubits that could open up pathways towards silicon-technology based, low-cost, room-temperature (RT) quantum sensing. The silicon dangling bond (db) is a natural candidate, given its sub-nanometer localization and direct involvement in spin-dependent charge-carrier recombination, allowing for electrical spin readout. In crystalline silicon, however, rapid loss of db spin-coherence at RT due to free-electron trap**, strongly limits quantum applications. In this work, by combining density-functional theory and multifrequency (100 MHz-263 GHz) pulsed electrically detected magnetic resonance spectroscopy, we show that upon electron capture, dbs in a hydrogenated amorphous silicon matrix form metastable spin pairs in a well-defined quasi two-dimensional (2D) configuration. Although highly localized, these entangled spin pairs exhibit nearly vanishing intrinsic dipolar and exchange coupling. The formation of this magic-angle-like configuration involves a >0.3 eV energy relaxation of a trapped electron, stabilizing the pair. This extends RT spin coherence times into the microsecond range in silicon required for a future spin-based quantum sensing technology.
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Submitted 26 February, 2024;
originally announced February 2024.
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Spin relaxation dynamics of radical-pair processes at low magnetic fields
Authors:
T. H. Tennahewa,
S. Hosseinzadeh,
S. I. Atwood,
H. Popli,
H. Malissa,
J. M. Lupton,
C. Boehme
Abstract:
We report measurements of room-temperature spin-relaxation times $T_1$ and $T_2$ of charge-carrier spins in a $π$-conjugated polymer thin film under bipolar injection and low ($1\mbox{ mT}\lesssim B_0\lesssim 10\mbox{ mT}$) static magnetic fields, using electrically detected magnetic resonant Hahn-echo and inversion-recovery pulse sequences. The experiments confirm the correlation between the magn…
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We report measurements of room-temperature spin-relaxation times $T_1$ and $T_2$ of charge-carrier spins in a $π$-conjugated polymer thin film under bipolar injection and low ($1\mbox{ mT}\lesssim B_0\lesssim 10\mbox{ mT}$) static magnetic fields, using electrically detected magnetic resonant Hahn-echo and inversion-recovery pulse sequences. The experiments confirm the correlation between the magnetic-field sensitive observables of radical-pair processes, which include both the spin-dependent recombination currents in organic semiconductors and the associated spin-relaxation times when random local hyperfine fields and external magnetic fields compete in magnitude. Whereas a striking field dependence of spin-lattice relaxation exists in the low-field regime, the apparent spin decoherence time remains field independent as the distinction between the two is lifted at low fields.
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Submitted 14 July, 2022;
originally announced July 2022.
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Spin-transport in an organic semiconductor without free charge carrier involvement
Authors:
H. Popli,
J. Wang,
X. Liu,
E. Lafalce,
T. H. Tennahewa,
H. Malissa,
Z. V. Vardeny,
C. Boehme
Abstract:
We have experimentally tested the hypothesis of free charge carrier mediated spin-transport in the small molecule organic semiconductor Alq3 at room temperature. A spin current was pumped into this material by pulsed ferromagnetic resonance of an adjacent NiFe layer, while a charge current resulting from this spin current via the inverse spin-Hall effect (ISHE) was detected in a Pt layer adjacent…
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We have experimentally tested the hypothesis of free charge carrier mediated spin-transport in the small molecule organic semiconductor Alq3 at room temperature. A spin current was pumped into this material by pulsed ferromagnetic resonance of an adjacent NiFe layer, while a charge current resulting from this spin current via the inverse spin-Hall effect (ISHE) was detected in a Pt layer adjacent on the other side of the Alq3 layer, confirming a pure spin current through the Alq3 layer. Charge carrier spin states in Alq3, were then randomized by simultaneous application of electron paramagnetic resonance (EPR). No influence of the EPR excitation on the ISHE current was found, implying that spin-transport is not mediated by free charge-carriers in Alq3.
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Submitted 6 January, 2021;
originally announced January 2021.
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Floquet spin states in OLEDs
Authors:
S. Jamali,
V. V. Mkhitaryan,
H. Malissa,
A. Nahlawi,
H. Popli,
T. Grünbaum,
S. Bange,
S. Milster,
D. Stoltzfus,
A. E. Leung,
T. A. Darwish,
P. L. Burn,
J. M. Lupton,
C. Boehme
Abstract:
Weakly spin-orbit coupled electron and hole spins in organic light-emitting diodes (OLEDs) constitute near-perfect two-level systems to explore the interaction of light and matter in the ultrastrong-drive regime. Under such highly non-perturbative conditions, the frequency at which the spin oscillates between states, the Rabi frequency, becomes comparable to its natural resonance frequency, the La…
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Weakly spin-orbit coupled electron and hole spins in organic light-emitting diodes (OLEDs) constitute near-perfect two-level systems to explore the interaction of light and matter in the ultrastrong-drive regime. Under such highly non-perturbative conditions, the frequency at which the spin oscillates between states, the Rabi frequency, becomes comparable to its natural resonance frequency, the Larmor frequency. For such conditions, we develop an intuitive understanding of the emergence of hybrid light-matter states, illustrating how dipole-forbidden multiple-quantum transitions at integer and fractional g-factors arise. A rigorous theoretical treatment of the phenomena comes from a Floquet-style solution to the time-dependent Hamiltonian of the electron-hole spin pair under resonant drive. To probe these phenomena experimentally requires both the development of a magnetic-resonance setup capable of supporting oscillating driving fields comparable in magnitude to the static field defining the Zeeman splitting; and an organic semiconductor which is characterized by minimal inhomogeneous broadening so as to allow the non-linear light-matter interactions to be resolved. The predicted exotic resonance features associated with the Floquet states are indeed found experimentally in measurements of spin-dependent steady-state OLED current under resonant drive, demonstrating that complex hybrid light-matter spin excitations can be formed and probed at room temperature. The spin-Dicke state arising under strong drive is insensitive to power broadening so that the Bloch-Siegert shift of the resonance becomes apparent, implying long coherence times of the dressed spin state with potential applicability for quantum sensing.
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Submitted 5 October, 2020;
originally announced October 2020.
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Spin-Dependent Charge-Carrier Recombination Processes in Tris(8-Hydroxyquinolinato) Aluminum
Authors:
H. Popli,
X. Liu,
T. H. Tennahewa,
M. Y. Teferi,
E. Lafalce,
H. Malissa,
Z. V. Vardeny,
C. Boehme
Abstract:
We have studied the nature and dynamics of spin-dependent charge carrier recombination in Tris(8-hydroxyquinolinato) aluminum (Alq$_3$) films in light emitting diodes at room temperature using continuous wave and pulsed electrically detected magnetic resonance (EDMR) spectroscopy. We found that the EDMR signal is dominated by an electron-hole recombination process, and another, weaker EDMR signal…
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We have studied the nature and dynamics of spin-dependent charge carrier recombination in Tris(8-hydroxyquinolinato) aluminum (Alq$_3$) films in light emitting diodes at room temperature using continuous wave and pulsed electrically detected magnetic resonance (EDMR) spectroscopy. We found that the EDMR signal is dominated by an electron-hole recombination process, and another, weaker EDMR signal whose fundamental nature was investigated. From the pulsed EDMR measurements we obtained a carrier spin relaxation time, $T_2 = 45\pm 25$ ns which is much shorter than $T_2$ in conjugated polymers, but relatively long for a molecule containing elements with high atomic number. Using multi-frequency continuous wave EDMR spectroscopy, we obtained the local hyperfine field distributions for electrons and holes, as well as their respective spin-orbit coupling induced g-factor and g-strain values.
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Submitted 1 April, 2020;
originally announced April 2020.
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Perdeuteration of poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene] (d-MEHPPV): control of microscopic charge-carrier spin-spin coupling and of magnetic-field effects in optoelectronic devices
Authors:
Dani M. Stoltzfus,
Gajadhar Joshi,
Henna Popli,
Shirin Jamali,
Marzieh Kavand,
Sebastian Milster,
Tobias Grünbaum,
Sebastian Bange,
Adnan Nahlawi,
Mandefro Y. Teferi,
Sabastian I. Atwood,
Anna E. Leung,
Tamim A. Darwish,
Hans Malissa,
Paul L. Burn,
John M. Lupton,
Christoph Boehme
Abstract:
Control of the effective local hyperfine fields in a conjugated polymer, poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene] (MEHPPV), by isotopic engineering is reported. These fields, evident as a frequency-independent line broadening mechanism in electrically detected magnetic resonance spectroscopy (EDMR), originate from the unresolved hyperfine coupling between the electronic spin of c…
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Control of the effective local hyperfine fields in a conjugated polymer, poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene] (MEHPPV), by isotopic engineering is reported. These fields, evident as a frequency-independent line broadening mechanism in electrically detected magnetic resonance spectroscopy (EDMR), originate from the unresolved hyperfine coupling between the electronic spin of charge carrier pairs and the nuclear spins of surrounding hydrogen isotopes. The room temperature study of effects caused by complete deuteration of this polymer through magnetoresistance, magnetoelectroluminescence, coherent pulsed and multi-frequency EDMR, as well as inverse spin-Hall effect measurements, confirm the weak hyperfine broadening of charge carrier magnetic resonance lines. As a consequence, we can resolve coherent charge-carrier spin-beating, allowing for direct measurements of the magnitude of electronic spin-spin interactions. In addition, the weak hyperfine coupling allows us to resolve substantial spin-orbit coupling effects in EDMR spectra, even at low magnetic field strengths. These results illustrate the dramatic influence of hyperfine fields on the spin physics of organic light-emitting diode (OLED) materials at room temperature, and point to routes to reaching exotic ultra-strong resonant-drive regimes needed for the study of light-matter interactions.
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Submitted 26 September, 2019;
originally announced September 2019.
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Electric-field quenching of optically detected magnetic resonance in a $π$-conjugated polymer
Authors:
D. L. Baird,
A. Nahlawi,
K. Crossley,
K. J. van Schooten,
M. Y. Teferi,
H. Popli,
G. Joshi,
S. Jamali,
H. Malissa,
J. M. Lupton,
C. Boehme
Abstract:
Electric fields are central to the operation of optoelectronic devices based on conjugated polymers since they drive the recombination of electrons and holes to excitons in organic light-emitting diodes but are also responsible for the dissociation of excitons in solar cells. One way to track the microscopic effect of electric fields on charge carriers formed under illumination of a polymer film i…
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Electric fields are central to the operation of optoelectronic devices based on conjugated polymers since they drive the recombination of electrons and holes to excitons in organic light-emitting diodes but are also responsible for the dissociation of excitons in solar cells. One way to track the microscopic effect of electric fields on charge carriers formed under illumination of a polymer film is to exploit the fluorescence arising from delayed recombination of carrier pairs, a process which is fundamentally spin dependent. Such spin-dependent recombination can be probed directly in fluorescence, by optically detected magnetic resonance (ODMR). Depending on the relative orientation, an electric field may either dissociate or stabilize an electron-hole carrier pair. We find that the ODMR signal in a polymer film is quenched in an electric field, but that, at fields exceeding 1 MV/cm, this quenching saturates. This finding contrasts the complete ODMR suppression that was previously observed in polymeric photodiodes, indicating that exciton-charge interactions---analogous to Auger recombination in crystalline semiconductors---may constitute the dominant carrier-pair dissociation process in organic electronics.
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Submitted 11 June, 2018;
originally announced June 2018.
