Showing 1–47 of 47 results for author: Poole, P J

On-demand single photon emission in the telecom C-band from nanowire-based quantum dots

Authors: Andrew N. Wakileh, Lingxi Yu, Doğa Dokuz, Sofiane Haffouz, Xiaohua Wu, Jean Lapointe, David B. Northeast, Robin L. Williams, Nir Rotenberg, Philip J. Poole, Dan Dalacu

Abstract: Single photon sources operating on-demand at telecom wavelengths are required in fiber-based quantum secure communication technologies. In this work we demonstrate single photon emission from position-controlled nanowire quantum dots emitting at λ > 1530 nm. Using above-band pulsed excitation, we obtain single photon purities of g(2)(0) = 0.062. These results represent an important step towards th… ▽ More Single photon sources operating on-demand at telecom wavelengths are required in fiber-based quantum secure communication technologies. In this work we demonstrate single photon emission from position-controlled nanowire quantum dots emitting at λ > 1530 nm. Using above-band pulsed excitation, we obtain single photon purities of g(2)(0) = 0.062. These results represent an important step towards the scalable manufacture of high efficiency, high rate single photon emitters in the telecom C-band. △ Less

Submitted 23 September, 2023; originally announced September 2023.

Widely tunable solid-state source of single-photons matching an atomic transition

Authors: Rubayet Al Maruf, Sreesh Venuturumilli, Divya Bharadwaj, Paul Anderson, Jiawei Qiu, Yujia Yuan, Mohd Zeeshan, Behrooz Semnani, Philip J. Poole, Dan Dalacu, Kevin Resch, Michael E. Reimer, Michal Bajcsy

Abstract: Hybrid quantum technologies aim to harness the best characteristics of multiple quantum systems, in a similar fashion that classical computers combine electronic, photonic, magnetic, and mechanical components. For example, quantum dots embedded in semiconductor nanowires can produce highly pure, deterministic, and indistinguishable single-photons with high repetition, while atomic ensembles offer… ▽ More Hybrid quantum technologies aim to harness the best characteristics of multiple quantum systems, in a similar fashion that classical computers combine electronic, photonic, magnetic, and mechanical components. For example, quantum dots embedded in semiconductor nanowires can produce highly pure, deterministic, and indistinguishable single-photons with high repetition, while atomic ensembles offer robust photon storage capabilities and strong optical nonlinearities that can be controlled with single-photons. However, to successfully integrate quantum dots with atomic ensembles, one needs to carefully match the optical frequencies of these two platforms. Here, we propose and experimentally demonstrate simple, precise, reversible, broad-range, and local method for controlling the emission frequency of individual quantum dots embedded in tapered semiconductor nanowires and use it to interface with an atomic ensemble via single-photons matched to hyperfine transitions and slow-light regions of the cesium D1-line. Our approach allows linking together atomic and solid-state quantum systems and can potentially also be applied to other types of nanowire-embedded solid-state emitters, as well as to creating devices based on multiple solid-state emitters tuned to produce indistinguishable photons. △ Less

Submitted 13 September, 2023; originally announced September 2023.

On-chip indistinguishable photons using III-V nanowire/SiN hybrid integration

Authors: Edith Yeung, David B. Northeast, Jeongwan **, Patrick Laferrière, Marek Korkusinski, Philip J. Poole, Robin L. Williams, Dan Dalacu

Abstract: We demonstrate on-chip generation of indistinguishable photons based on a nanowire quantum dot. From a growth substrate containing arrays of positioned-controlled single dot nanowires, we select a single nanowire which is placed on a SiN waveguide fabricated on a Si-based chip. Coupling of the quantum dot emission to the SiN waveguide is via the evanescent mode in the tapered nanowire. Post-select… ▽ More We demonstrate on-chip generation of indistinguishable photons based on a nanowire quantum dot. From a growth substrate containing arrays of positioned-controlled single dot nanowires, we select a single nanowire which is placed on a SiN waveguide fabricated on a Si-based chip. Coupling of the quantum dot emission to the SiN waveguide is via the evanescent mode in the tapered nanowire. Post-selected two-photon interference visibilities using continuous wave excitation above-band and into a p-shell of the dot were 100%, consistent with a single photon source having negligible multi-photon emission probability. Visibilities over the entire photon wavepacket, measured using pulsed excitation, were reduced by a factor of 5 when exciting quasi-resonantly and by a factor of 10 for above-band excitation. The role of excitation timing jitter, spectral diffusion and pure dephasing in limiting visibilities over the temporal extent of the photon is investigated using additional measurements of the coherence and linewidth of the emitted photons. △ Less

Submitted 20 August, 2023; originally announced August 2023.

Oscillating photonic Bell state from a semiconductor quantum dot for quantum key distribution

Authors: Matteo Pennacchietti, Brady Cunard, Shlok Nahar, Mohd Zeeshan, Sayan Gangopadhyay, Philip J. Poole, Dan Dalacu, Andreas Fognini, Klaus D. Jöns, Val Zwiller, Thomas Jennewein, Norbert Lütkenhaus, Michael E. Reimer

Abstract: An on-demand source of bright entangled photon pairs is desirable for quantum key distribution (QKD) and quantum repeaters. The leading candidate to generate entangled photon pairs is based on spontaneous parametric down-conversion (SPDC) in a non-linear crystal. However, there exists a fundamental trade-off between entanglement fidelity and efficiency in SPDC sources due to multiphoton emission a… ▽ More An on-demand source of bright entangled photon pairs is desirable for quantum key distribution (QKD) and quantum repeaters. The leading candidate to generate entangled photon pairs is based on spontaneous parametric down-conversion (SPDC) in a non-linear crystal. However, there exists a fundamental trade-off between entanglement fidelity and efficiency in SPDC sources due to multiphoton emission at high brightness, which limits the pair extraction efficiency to 0.1% when operating at near-unity fidelity. Quantum dots in photonic nanostructures can in principle overcome this trade-off; however, the quantum dots that have achieved entanglement fidelities on par with SPDC sources (99%) have poor pair extraction efficiencies of 0.01%. Here, we demonstrate a 65-fold increase in the pair extraction efficiency compared to quantum dots with equivalent peak fidelity from an InAsP quantum dot in a photonic nanowire waveguide. We measure a raw peak concurrence and fidelity of 95.3% $\pm$ 0.5% and 97.5% $\pm$ 0.8%, respectively. Finally, we show that an oscillating two-photon Bell state generated by a semiconductor quantum dot can be utilized to establish a secure key for QKD, alleviating the need to remove the quantum dot energy splitting of the intermediate exciton states in the biexciton-exciton cascade. △ Less

Submitted 12 July, 2023; originally announced July 2023.

Comments: 24 pages (7 main body, excluding references plus 14 supplemental information) and 4 main body figures

Scalable generation and detection of on-demand W states in nanophotonic circuits

Authors: Jun Gao, Leonardo Santos, Govind Krishna, Ze-Sheng Xu, Adrian Iovan, Stephan Steinhauer, Otfried Gühne, Philip J. Poole, Dan Dalacu, Val Zwiller, Ali W. Elshaari

Abstract: Quantum physics phenomena, entanglement and coherence, are crucial for quantum information protocols, but understanding these in systems with more than two parts is challenging due to increasing complexity. The W state, a multipartite entangled state, is notable for its robustness and benefits in quantum communication. Here, we generate an 8-mode on-demand single photon W states, using nanowire qu… ▽ More Quantum physics phenomena, entanglement and coherence, are crucial for quantum information protocols, but understanding these in systems with more than two parts is challenging due to increasing complexity. The W state, a multipartite entangled state, is notable for its robustness and benefits in quantum communication. Here, we generate an 8-mode on-demand single photon W states, using nanowire quantum dots and a silicon nitride photonic chip. We demonstrate a reliable, scalable technique for reconstructing W-state in photonic circuits using Fourier and real-space imaging, supported by the Gerchberg-Saxton phase retrieval algorithm. Additionally, we utilize an entanglement witness to distinguish between mixed and entangled states, thereby affirming the entangled nature of our generated state. The study provides a new imaging approach of assessing multipartite entanglement in W-states, paving the way for further progress in image processing and Fourier-space analysis techniques for complex quantum systems. △ Less

Submitted 12 July, 2023; originally announced July 2023.

Dynamic strain modulation of a nanowire quantum dot compatible with a thin-film lithium niobate photonic platform

Authors: Thomas Descamps, Tanguy Schetelat, Jun Gao, Philip J. Poole, Dan Dalacu, Ali W. Elshaari, Val Zwiller

Abstract: The integration of on-demand single photon sources in photonic circuits is a major prerequisite for on-chip quantum applications. Among the various high-quality sources, nanowire quantum dots can be efficiently coupled to optical waveguides because of their preferred emission direction along their growth direction. However, local tuning of the emission properties remains challenging. In this work,… ▽ More The integration of on-demand single photon sources in photonic circuits is a major prerequisite for on-chip quantum applications. Among the various high-quality sources, nanowire quantum dots can be efficiently coupled to optical waveguides because of their preferred emission direction along their growth direction. However, local tuning of the emission properties remains challenging. In this work, we transfer a nanowire quantum dot on a bulk lithium niobate substrate and show that its emission can be dynamically tuned by acousto-optical coupling with surface acoustic waves. The purity of the single photon source is preserved during the strain modulation. We further demonstrate that the transduction is maintained even with a SiO2 encapsulation layer deposited on top of the nanowire acting as the cladding of a photonic circuit. Based on these experimental findings and numerical simulations, we introduce a device architecture consisting of a nanowire quantum dot efficiently coupled to a thin film lithium niobate rib waveguide and strain-tunable by surface acoustic waves. △ Less

Submitted 19 August, 2023; v1 submitted 9 June, 2023; originally announced June 2023.

Position-controlled Telecom Single Photon Emitters Operating at Elevated Temperatures

Authors: Patrick Laferrière, Sofiane Haffouz, David B. Northeast, Philip J. Poole, Robin L. Williams, Dan Dalacu

Abstract: Single photon emitters are a key component for enabling the practical use of quantum key distribution protocols for secure communications. For long-haul optical networks it is imperative to use photons at wavelengths that are compatible with standard single mode fibers: 1.31 μm and 1.55 μm. We demonstrate high purity single photon emission at 1.31 μm using deterministically positioned InP photonic… ▽ More Single photon emitters are a key component for enabling the practical use of quantum key distribution protocols for secure communications. For long-haul optical networks it is imperative to use photons at wavelengths that are compatible with standard single mode fibers: 1.31 μm and 1.55 μm. We demonstrate high purity single photon emission at 1.31 μm using deterministically positioned InP photonic waveguide nanowires containing single InAsP quantum dot-in-a-rod structures. At 4 K the detected count rate in fiber was 1.9 Mcps under above-band pulsed laser excitation at 80 MHz corresponding to a single photon collection efficiency at the first lens of 25%. At this count rate, the probability of multiphoton emission is g(2)(0) = 0.021. We have also evaluated the performance of the source as a function of temperature. Multiphoton emission probability increases with temperature with values of 0.11, 0.34 and 0.57 at 77 K, 220 K and 300 K, respectively, which is attributed to an overlap of temperature-broadened excitonic emission lines. These results are a promising step towards scalably fabricating telecom single photon emitters that operate under relaxed cooling requirements. △ Less

Submitted 28 October, 2022; v1 submitted 23 October, 2022; originally announced October 2022.

Journal ref: Nano Lett. 23 (2023) 962-968

Approaching transform-limited photons from nanowire quantum dots excited above-band

Authors: Patrick Laferrière, Aria Yin, Edith Yeung, Leila Kusmic, Marek Korkusinski, Payman Rasekh, David B. Northeast, Sofiane Haffouz, Jean Lapointe, Philip J. Poole, Robin L. Williams, Dan Dalacu

Abstract: We demonstrate that, even when employing above-band excitation, photons emitted from semiconductor quantum dots can have linewidths that approach their transform-limited values. This is accomplished by using quantum dots embedded in bottom-up photonic nanowires, an approach which mitigates several potential mechanisms that can result in linewidth broadening: (i) only a single quantum dot is presen… ▽ More We demonstrate that, even when employing above-band excitation, photons emitted from semiconductor quantum dots can have linewidths that approach their transform-limited values. This is accomplished by using quantum dots embedded in bottom-up photonic nanowires, an approach which mitigates several potential mechanisms that can result in linewidth broadening: (i) only a single quantum dot is present in each device, (ii) dot nucleation proceeds without the formation of a wetting layer, and (iii) the sidewalls of the photonic nanowire are comprised not of etched facets, but of epitaxially grown crystal planes. Using these structures we achieve linewidths of 2x the transform limit, unprecedented for above-band excitation. We also demonstrate a highly nonlinear dependence of the linewidth on both excitation power and temperature which can be described by an independent Boson model that considers both deformation and piezoelectric exciton-phonon coupling. We find that for sufficiently low excitation powers and temperatures, the observed excess broadening is not dominated by phonon dephasing, a surprising result considering the high phonon occupation that occurs with above-band excitation. △ Less

Submitted 29 July, 2022; originally announced August 2022.

Journal ref: Phys. Rev. B 107, (2023) 15522

Nanometer-Scale Nuclear Magnetic Resonance Diffraction with Sub-Ångstrom Precision

Authors: Holger Haas, Sahand Tabatabaei, William Rose, Pardis Sahafi, Michèle Piscitelli, Andrew Jordan, Pritam Priyadarsi, Namanish Singh, Ben Yager, Philip J. Poole, Dan Dalacu, Raffi Budakian

Abstract: Achieving atomic resolution is the ultimate limit of magnetic resonance imaging (MRI), and attaining this capability offers enormous technological and scientific opportunities, from drug development to understanding the dynamics in interacting quantum systems. In this work, we present a new approach to nanoMRI utilizing nuclear magnetic resonance diffraction (NMRd) -- a method that extends NMR ima… ▽ More Achieving atomic resolution is the ultimate limit of magnetic resonance imaging (MRI), and attaining this capability offers enormous technological and scientific opportunities, from drug development to understanding the dynamics in interacting quantum systems. In this work, we present a new approach to nanoMRI utilizing nuclear magnetic resonance diffraction (NMRd) -- a method that extends NMR imaging to probe the structure of periodic spin systems. The realization of NMRd on the atomic scale would create a powerful new methodology for materials characterization utilizing the spectroscopic capabilities of NMR. We describe two experiments that realize NMRd measurement of $^{31}$P spins in an indium-phosphide (InP) nanowire with sub-Ångstrom precision. In the first experiment, we encode a nanometer-scale spatial modulation of the $z$-axis magnetization by periodically inverting the $^{31}$P spins, and detect the period and position of the modulation with a precision of $<0.8$ Å. In the second experiment, we demonstrate an interferometric technique, utilizing NMRd, for detecting an Ångstrom-scale displacement of the InP sample with a precision of 0.07 Å. The diffraction-based techniques developed in this work represent new measurement modalities in NMR for probing the structure and dynamics of spins on sub-Ångstrom length scales, and demonstrate the feasibility of crystallographic MRI measurements. △ Less

Submitted 1 April, 2022; originally announced April 2022.

Comments: Main text: 11 pages, 8 figures; supplemental material: 20 pages, 15 figures

Unity yield of deterministically positioned quantum dot single photon sources

Authors: Patrick Laferrière, Edith Yeung, Isabelle Miron, David B. Northeast, Sofiane Haffouz, Jean Lapointe, Marek Korkusinski, Philip J. Poole, Robin L. Williams, Dan Dalacu

Abstract: We report on a platform for the production of single photon devices with a fabrication yield of 100%. The sources are based on InAsP quantum dots embedded within position-controlled bottom-up InP nanowires. Using optimized growth conditions, we produce large arrays of structures having highly uniform geometries. Collection efficiencies are as high as 83% and multiphoton emission probabilities as l… ▽ More We report on a platform for the production of single photon devices with a fabrication yield of 100%. The sources are based on InAsP quantum dots embedded within position-controlled bottom-up InP nanowires. Using optimized growth conditions, we produce large arrays of structures having highly uniform geometries. Collection efficiencies are as high as 83% and multiphoton emission probabilities as low as 0.6% with the distribution away from optimal values associated with the excitation of other charge complexes and re-excitation processes, respectively, inherent to the above-band excitation employed. Importantly, emission peak lineshapes have Lorentzian profiles indicating that linewidths are not limited by inhomogeneous broadening but rather pure dephasing, likely elastic carrier-phonon scattering due to a high phonon occupation. This work establishes nanowire-based devices as a viable route for the scalable fabrication of efficient single photon sources and provides a valuable resource for hybrid on-chip platforms currently being developed. △ Less

Submitted 15 October, 2021; originally announced October 2021.

Comments: 9 pages, 5 figures

Optical fibre-based (plug-and-play) single photon source using InAsP quantum dot nanowires and gradient-index lens collection

Authors: David B. Northeast, John F. Weber, Dan Dalacu, Jason Phoenix, Philip J. Poole, Geof Aers, Jean Lapointe, Robin L. Williams

Abstract: We present a compact, fibre-coupled single photon source using gradient-index (GRIN) lenses and an InAsP semiconductor quantum dot embedded within an InP photonic nanowire waveguide. A GRIN lens assembly is used to collect photons close to the tip of the nanowire, coupling the light immediately into a single mode optical fibre. The system provides a stable, high brightness source of fibre-coupled… ▽ More We present a compact, fibre-coupled single photon source using gradient-index (GRIN) lenses and an InAsP semiconductor quantum dot embedded within an InP photonic nanowire waveguide. A GRIN lens assembly is used to collect photons close to the tip of the nanowire, coupling the light immediately into a single mode optical fibre. The system provides a stable, high brightness source of fibre-coupled single photons. Using pulsed excitation, we demonstrate on-demand operation with a single photon purity of 98.5% when exciting at saturation in a device with a source-fibre collection efficiency of 35% and an overall single photon collection efficiency of 10%. We also demonstrate "plug and play" operation using room temperature photoluminescence from the InP nanowire for room temperature alignment. △ Less

Submitted 22 April, 2021; originally announced April 2021.

Magnetic tuning of tunnel coupling between InAsP double quantum dots in InP nanowires

Authors: Jason Phoenix, Marek Korkusinski, Dan Dalacu, Philip J. Poole, Piotr Zawadzki, Sergei Studenikin, Robin L. Williams, Andrew S. Sachrajda, Louis Gaudreau

Abstract: We study experimentally and theoretically the in-plane magnetic field dependence of the coupling between dots forming a vertically stacked double dot molecule. The InAsP molecule is grown epitaxially in an InP nanowire and interrogated optically at millikelvin temperatures. The strength of interdot tunneling, leading to the formation of the bonding-antibonding pair of molecular orbitals, is invest… ▽ More We study experimentally and theoretically the in-plane magnetic field dependence of the coupling between dots forming a vertically stacked double dot molecule. The InAsP molecule is grown epitaxially in an InP nanowire and interrogated optically at millikelvin temperatures. The strength of interdot tunneling, leading to the formation of the bonding-antibonding pair of molecular orbitals, is investigated by adjusting the sample geometry. For specific geometries, we show that the interdot coupling can be controlled in-situ using a magnetic field-mediated redistribution of interdot coupling strengths. This is an important milestone in the development of qubits required in future quantum information technologies. △ Less

Submitted 14 November, 2021; v1 submitted 13 March, 2021; originally announced March 2021.

Comments: 5 pages, 3 figures

Demonstration and modelling of time-bin entangled photons from a quantum dot in a nanowire

Authors: Philipp Aumann, Maximilian Prilmüller, Florian Kappe, Laurin Ostermann, Dan Dalacu, Philip J. Poole, Helmut Ritsch, Wolfgang Lechner, Gregor Weihs

Abstract: Resonant excitation of the biexciton state in an InAsP quantum dot by a phase-coherent pair of picosecond pulses allows preparing time-bin entangled pairs of photons via the biexciton-exciton cascade. We show that this scheme can be implemented for a dot embedded in an InP nanowire. The underlying physical mechanisms can be represented and quantitatively analyzed by an effective three-level open s… ▽ More Resonant excitation of the biexciton state in an InAsP quantum dot by a phase-coherent pair of picosecond pulses allows preparing time-bin entangled pairs of photons via the biexciton-exciton cascade. We show that this scheme can be implemented for a dot embedded in an InP nanowire. The underlying physical mechanisms can be represented and quantitatively analyzed by an effective three-level open system master equation. Simulation parameters including decay and intensity dependent dephasing rates are extracted from experimental data, which in turn let us predict the resulting entanglement and optimal operating conditions. △ Less

Submitted 5 May, 2022; v1 submitted 30 January, 2021; originally announced February 2021.

Journal ref: AIP Advances 12, 055115 (2022)

Enhancing secure key rates of satellite QKD using a quantum dot single-photon source

Authors: Poompong Chaiwongkhot, Sara Hosseini, Arash Ahmadi, Brendon L. Higgins, Dan Dalacu, Philip J. Poole, Robin L. Williams, Michael E. Reimer, Thomas Jennewein

Abstract: Global quantum secure communication can be achieved using quantum key distribution (QKD) with orbiting satellites. Established techniques use attenuated lasers as weak coherent pulse (WCP) sources, with so-called decoy-state protocols, to generate the required single-photon-level pulses. While such approaches are elegant, they come at the expense of attainable final key due to inherent multi-photo… ▽ More Global quantum secure communication can be achieved using quantum key distribution (QKD) with orbiting satellites. Established techniques use attenuated lasers as weak coherent pulse (WCP) sources, with so-called decoy-state protocols, to generate the required single-photon-level pulses. While such approaches are elegant, they come at the expense of attainable final key due to inherent multi-photon emission, thereby constraining secure key generation over the high-loss, noisy channels expected for satellite transmissions. In this work we improve on this limitation by using true single-photon pulses generated from a semiconductor quantum dot (QD) embedded in a nanowire, possessing low multi-photon emission ($<10^{-6}$) and an extraction system efficiency of -15 dB (or 3.1%). Despite the limited efficiency, the key generated by the QD source is greater than that generated by a WCP source under identical repetition rate and link conditions representative of a satellite pass. We predict that with realistic improvements of the QD extraction efficiency to -4.0 dB (or 40%), the quantum-dot QKD protocol outperforms WCP-decoy-state QKD by almost an order of magnitude. Consequently, a QD source could allow generation of a secure key in conditions where a WCP source would simply fail, such as in the case of high channel losses. Our demonstration is the first specific use case that shows a clear benefit for QD-based single-photon sources in secure quantum communication, and has the potential to enhance the viability and efficiency of satellite-based QKD networks. △ Less

Submitted 24 September, 2020; originally announced September 2020.

Comments: 6 pages, 5 figures

Numerical Engineering of Robust Adiabatic Operations

Authors: Sahand Tabatabaei, Holger Haas, William Rose, Ben Yager, Michèle Piscitelli, Pardis Sahafi, Andrew Jordan, Philip J. Poole, Dan Dalacu, Raffi Budakian

Abstract: Adiabatic operations are powerful tools for robust quantum control in numerous fields of physics, chemistry and quantum information science. The inherent robustness due to adiabaticity can, however, be impaired in applications requiring short evolution times. We present a single versatile gradient-based optimization protocol that combines adiabatic control with effective Hamiltonian engineering in… ▽ More Adiabatic operations are powerful tools for robust quantum control in numerous fields of physics, chemistry and quantum information science. The inherent robustness due to adiabaticity can, however, be impaired in applications requiring short evolution times. We present a single versatile gradient-based optimization protocol that combines adiabatic control with effective Hamiltonian engineering in order to design adiabatic operations tailored to the specific imperfections and resources of an experimental setup. The practicality of the protocol is demonstrated by engineering a fast, 2.3 Rabi cycle-long adiabatic inversion pulse for magnetic resonance with built-in robustness to Rabi field inhomogeneities and resonance offsets. The performance and robustness of the pulse is validated in a nanoscale force-detected magnetic resonance experiment on a solid-state sample, indicating an ensemble-averaged inversion accuracy of $\sim 99.997\%$. We further showcase the utility of our protocol by providing examples of adiabatic pulses robust to spin-spin interactions, parameter-selective operations and operations connecting arbitrary states, each motivated by experiments. △ Less

Submitted 30 April, 2021; v1 submitted 7 September, 2020; originally announced September 2020.

Comments: Main text: 14 pages, 6 figures; supplemental material: 6 pages, 2 figures

Journal ref: Phys. Rev. Applied 15, 044043 (2021)

Multiplexed Single Photons from Deterministically Positioned Nanowire Quantum Dots

Authors: Zhe-Xian Koong, Guillem Ballesteros-Garcia, Raphaël Proux, Dan Dalacu, Philip J. Poole, Brian D. Gerardot

Abstract: Solid-state quantum emitters are excellent sources of on-demand indistinguishable or entangled photons and can host long-lived spin memories, crucial resources for photonic quantum information applications. However, their scalability remains an outstanding challenge. Here we present a scalable technique to multiplex streams of photons from multiple independent quantum dots, on-chip, into a fiber n… ▽ More Solid-state quantum emitters are excellent sources of on-demand indistinguishable or entangled photons and can host long-lived spin memories, crucial resources for photonic quantum information applications. However, their scalability remains an outstanding challenge. Here we present a scalable technique to multiplex streams of photons from multiple independent quantum dots, on-chip, into a fiber network for use off-chip. Multiplexing is achieved by incorporating a multi-core fiber into a confocal microscope and spatially matching the multiple foci, seven in this case, to quantum dots in an array of deterministically positioned nanowires. First, we report the coherent control of the emission of biexciton-exciton cascade from a single nanowire quantum dot under resonant two-photon excitation. Then, as a proof-of-principle demonstration, we perform parallel spectroscopy on the nanowire array to identify two nearly identical quantum dots at different positions which are subsequently tuned into resonance with an external magnetic field. Multiplexing of background-free single photons from these two quantum dots is then achieved. Our approach, applicable to all types of quantum emitters, can readily be scaled up to multiplex $>100$ quantum light sources, providing a breakthrough in hardware for photonic based quantum technologies. Immediate applications include quantum communication, quantum simulation, and quantum computation. △ Less

Submitted 11 May, 2020; originally announced May 2020.

Comments: 10 pages, 4 figures

Journal ref: Phys. Rev. Applied 14, 034011 (2020)

Isolator-free Integration of C-band InAs-InP Quantum Dash Buried Heterostructure Lasers with Silicon Waveguides

Authors: Jens H. Schmid, Mohamed Rahim, Grzegorz Pakulski, Martin Vachon, Siegfried Janz, Pavel Cheben, Dan-Xia Xu, Philip J. Poole, Pedro Barrios, Weihong Jiang, Jean Lapointe, Daniele Melati

Abstract: An InAs-on-InP quantum dash buried heterostructure laser and silicon chip optimized for mutual integration by direct facet-to-facet coupling have achieved -1.2 dB coupling efficiency, with coupled laser RIN of -150 dB/Hz and 152 kHz linewidth. An InAs-on-InP quantum dash buried heterostructure laser and silicon chip optimized for mutual integration by direct facet-to-facet coupling have achieved -1.2 dB coupling efficiency, with coupled laser RIN of -150 dB/Hz and 152 kHz linewidth. △ Less

Submitted 30 March, 2020; originally announced May 2020.

A platform for high performance photon correlation measurements

Authors: Iman Esmaeil Zadeh, Johannes W. N. Los, Ronan B. M. Gourgues, ** Chang, Ali W. Elshaari, Julien Zichi, Yuri J. van Staaden, Jeroen Swens, Nima Kalhor, Antonio Guardiani, Yun Meng, Kai Zou, Sergiy Dobrovolskiy, Andreas W. Fognini, Dennis R. Schaart, Dan Dalacu, Philip J. Poole, Michael E. Reimer, Xiaolong Hu, Silvania F. Pereira, Val Zwiller, Sander N. Dorenbos

Abstract: A broad range of scientific and industrial disciplines require precise optical measurements at very low light levels. Single-photon detectors combining high efficiency and high time resolution are pivotal in such experiments. By using relatively thick films of NbTiN (8-11\,nm) and improving the pattern fidelity of the nano-structure of the superconducting nanowire single-photon detectors (SNSPD),… ▽ More A broad range of scientific and industrial disciplines require precise optical measurements at very low light levels. Single-photon detectors combining high efficiency and high time resolution are pivotal in such experiments. By using relatively thick films of NbTiN (8-11\,nm) and improving the pattern fidelity of the nano-structure of the superconducting nanowire single-photon detectors (SNSPD), we fabricated devices demonstrating superior performance over all previously reported detectors in the combination of efficiency and time resolution. Our findings prove that small variations in the nanowire width, in the order of a few nanometers, can lead to a significant penalty on their temporal response. Addressing these issues, we consistently achieved high time resolution (best device 7.7\,ps, other devices $\sim$10-16\,ps) simultaneously with high system detection efficiencies ($80-90\%$) in the wavelength range of 780-1000\,nm, as well as in the telecom bands (1310-1550\,nm). The use of thicker films allowed us to fabricate large-area multi-pixel devices with homogeneous pixel performance. We first fabricated and characterized a $100\times100\, μm^2$ 16-pixel detector and showed there was little variation among individual pixels. Additionally, to showcase the power of our platform, we fabricated and characterized 4-pixel multimode fiber-coupled detectors and carried out photon correlation experiments on a nanowire quantum dot resulting in $g^2(0)$ values lower than 0.04. The multi-pixel detectors alleviate the need for beamsplitters and can be used for higher order correlations with promising prospects not only in the field of quantum optics, but also in bio-imaging applications, such as fluorescence microscopy and positron emission tomography. △ Less

Submitted 22 March, 2020; originally announced March 2020.

Monolithic integration of single photon sources via evanescent coupling of tapered InP nanowires to SiN waveguides

Authors: Khaled Mnaymneh, Dan Dalacu, Joseph McKee, Jean Lapointe, Sofiane Haffouz, Philip J. Poole, Geof C. Aers, Robin L. Williams

Abstract: We demonstrate a method to monolithically integrate nanowire-based quantum dot single photon sources on-chip using evanescent coupling. By deterministically placing an appropriately tapered III-V nanowire waveguide, containing a single quantum dot, on top of a silicon-based ridge waveguide, the quantum dot emission can be transferred to the ridge waveguide with calculated efficiencies close to 100… ▽ More We demonstrate a method to monolithically integrate nanowire-based quantum dot single photon sources on-chip using evanescent coupling. By deterministically placing an appropriately tapered III-V nanowire waveguide, containing a single quantum dot, on top of a silicon-based ridge waveguide, the quantum dot emission can be transferred to the ridge waveguide with calculated efficiencies close to 100%. As the evanescent coupling is bidirectional, the source can be optically pumped in both free-space and through the ridge waveguide. The latter onfiguration provides a self-contained, all-fiber, single photon source suitable as a plug-and-play solution for applications requiring bright, on-demand single photons. Using InAsP quantum dots embedded in InP nanowire waveguides, we demonstrate coupling efficiencies to a SiN ridge waveguide of 74% with a single photon purity of 97%. △ Less

Submitted 8 December, 2018; originally announced January 2019.

Controlled integration of selected detectors and emitters in photonic integrated circuits

Authors: Ronan Gourgues, Iman Esmaeil Zadeh, Ali W. Elshaari, Gabriele Bulgarini, Johannes W. N. Los, Julien Zichi, Dan Dalacu, Philip J. Poole, Sander N. Dorenbos, Val Zwiller

Abstract: Integration of superconducting nanowire single photon detectors and quantum sources with photonic waveguides is crucial for realizing advanced quantum integrated circuits. However, scalability is hindered by stringent requirements on high performance detectors. Here we overcome the yield limitation by controlled coupling of photonic channels to pre-selected detectors based on measuring critical cu… ▽ More Integration of superconducting nanowire single photon detectors and quantum sources with photonic waveguides is crucial for realizing advanced quantum integrated circuits. However, scalability is hindered by stringent requirements on high performance detectors. Here we overcome the yield limitation by controlled coupling of photonic channels to pre-selected detectors based on measuring critical current, timing resolution, and detection efficiency. As a proof of concept of our approach, we demonstrate a hybrid on-chip full-transceiver consisting of a deterministically integrated detector coupled to a selected nanowire quantum dot through a filtering circuit made of a silicon nitride waveguide and a ring resonator filter, delivering 100 dB suppression of the excitation laser. In addition, we perform extensive testing of the detectors before and after integration in the photonic circuit and show that the high performance of the superconducting nanowire detectors, including timing jitter down to 23 $\pm$ 3 ps, is maintained. Our approach is fully compatible with wafer level automated testing in a cleanroom environment. △ Less

Submitted 16 November, 2018; v1 submitted 30 October, 2018; originally announced November 2018.

Theory and experiments of coherent photon coupling in semiconductor nanowire waveguides with quantum dot molecules

Authors: Chelsea Carlson, Dan Dalacu, Chris Gustin, Sofiane Haffouz, Xiaohua Wu, Jean Lapointe, Robin L. Williams, Philip J. Poole, Stephen Hughes

Abstract: We present a quantum optics theory, numerical calculations, and experiments on coupled quantumdots in semiconductor nanowire waveguides. We first present an analytical Green function theory tocompute the emitted spectra of two coupled quantum dots, treated as point dipoles, fully accountingfor retardation effects, and demonstrate the signatures of coherent and incoherent coupling througha pronounc… ▽ More We present a quantum optics theory, numerical calculations, and experiments on coupled quantumdots in semiconductor nanowire waveguides. We first present an analytical Green function theory tocompute the emitted spectra of two coupled quantum dots, treated as point dipoles, fully accountingfor retardation effects, and demonstrate the signatures of coherent and incoherent coupling througha pronounced splitting of the uncoupled quantum dot resonances and modified spectral broadening.In the weak excitation regime, the classical Green functions used in models are verified and justifiedthrough full 3D solutions of Maxwell equations for nanowire waveguides, specifically using finite-difference time-domain techniques, showing how both waveguide modes and near-field evanescentmode coupling is important. The theory exploits an ensemble-based quantum description, and andan intuitive eigenmode-expansion based Maxwell theory. We then demonstrate how the molecularresonances (in the presence of coupling) take on the form of bright and dark (or quasi-dark) reso-nances, and study how these depend on the excitation and detection conditions. To go beyond theweak excitation regime, we also introduce a quantum master equation approach to model the non-linear spectra from an increasing incoherent pump field, which shows the role of the pump field onthe oscillator strengths and broadening of the molecular resonances, with and without pure dephas-ing. Next, we present experimental photoluminescence spectra for spatially-separated quantum dotmolecules (InAsP) in InP nanowires, which show clear signatures of pronounced splittings, thoughthey also highlight additional mechanisms that are not accounted for in the dipole-dipole couplingmodel. Two different approaches are taken to control the spatial separation of the quantum dotmolecules, and we discuss the advantages and disadvantages of each. △ Less

Submitted 18 April, 2019; v1 submitted 9 October, 2018; originally announced October 2018.

Comments: 20 pages, 16 figures

Journal ref: Phys. Rev. B 99, 085311 (2019)

Depolarization of Electronic Spin Qubits Confined in Semiconductor Quantum Dots

Authors: Dan Cogan, Oded Kenneth, Netanel H. Lindner, Giora Peniakov, Caspar Hopfmann, Dan Dalacu, Philip J. Poole, Pawel Hawrylak, David Gershoni

Abstract: Quantum dots are arguably the best interface between matter spin qubits and flying photonic qubits. Using quantum dot devices to produce joint spin-photonic states requires the electronic spin qubits to be stored for extended times. Therefore, the study of the coherence of spins of various quantum dot confined charge carriers is important both scientifically and technologically. In this study we r… ▽ More Quantum dots are arguably the best interface between matter spin qubits and flying photonic qubits. Using quantum dot devices to produce joint spin-photonic states requires the electronic spin qubits to be stored for extended times. Therefore, the study of the coherence of spins of various quantum dot confined charge carriers is important both scientifically and technologically. In this study we report on spin relaxation measurements performed on five different forms of electronic spin qubits confined in the very same quantum dot. In particular, we use all optical techniques to measure the spin relaxation of the confined heavy hole and that of the dark exciton - a long lived electron-heavy hole pair with parallel spins. Our measured results for the spin relaxation of the electron, the heavy-hole, the dark exciton, the negative and the positive trions, in the absence of externally applied magnetic field, are in agreement with a central spin theory which attributes the dephasing of the carriers' spin to their hyperfine interactions with the nuclear spins of the atoms forming the quantum dots. We demonstrate that the heavy hole dephases much slower than the electron. We also show, both experimentally and theoretically, that the dark exciton dephases slower than the heavy hole, due to the electron-hole exchange interaction, which partially protects its spin state from dephasing. △ Less

Submitted 1 August, 2018; originally announced August 2018.

Comments: 12 pages, 5 figures, 1 table

Journal ref: Phys. Rev. X 8, 041050 (2018)

Phase Diagram of Quantum Hall Breakdown and Non-linear Phenomena for InGaAs/InP Quantum Wells

Authors: V. Yu, M. Hilke, P. J. Poole, S. Studenikin, D. G. Austing

Abstract: We investigate non-linear magneto-transport in a Hall bar device made from a strained InGaAs/InP quantum well: a material system with attractive spintronic properties. From extensive maps of the longitudinal differential resistance (r_xx) as a function of current and magnetic (B-) field phase diagrams are generated for quantum Hall breakdown in the strong quantum Hall regime reaching filling facto… ▽ More We investigate non-linear magneto-transport in a Hall bar device made from a strained InGaAs/InP quantum well: a material system with attractive spintronic properties. From extensive maps of the longitudinal differential resistance (r_xx) as a function of current and magnetic (B-) field phase diagrams are generated for quantum Hall breakdown in the strong quantum Hall regime reaching filling factor $ν$=1. By careful illumination the electron sheet density (n) is incremented in small steps and this provides insight into how the transport characteristics evolve with n. We explore in depth the energetics of integer quantum Hall breakdown and provide a simple picture for the principal features in the r_xx maps. A simple tunneling model that captures a number of the characteristic features is introduced. Parameters such as critical Hall electric fields and the exchange-enhanced g-factors for odd-filling factors including nu=1 are extracted. A detailed examination is made of the B-field dependence of the critical current as determined by two different methods and compiled for different values of n. A simple rescaling procedure that allows the critical current data points obtained from r_xx maxima for even-filling to collapse on to a single curve is demonstrated. Exchange-enhanced g-factors for odd-filling are extracted from the compiled data and are compared to those determined by conventional thermal activation measurements. The exchange-enhanced g-factor is found to increase with decreasing n. △ Less

Submitted 24 May, 2018; originally announced May 2018.

Comments: 16 pages

Journal ref: Phys. Rev. B 98, 165434 (2018)

In-situ tuning of individual position-controlled nanowire quantum dots via laser-induced intermixing

Authors: Alexis Fiset-Cyr, Dan Dalacu, Sofiane Haffouz, Philip J. Poole, Jean Lapointe, Geof C. Aers, Robin L. William

Abstract: We demonstrate an in-situ technique to tune the emission energy of semiconductor quantum dots. The technique is based on laser-induced atomic intermixing applied to nanowire quantum dots grown using a site-selective process that allows for the deterministic tuning of individual emitters. A tuning range of up to 15 meV is obtained with a precision limited by the laser exposure time. A distinct satu… ▽ More We demonstrate an in-situ technique to tune the emission energy of semiconductor quantum dots. The technique is based on laser-induced atomic intermixing applied to nanowire quantum dots grown using a site-selective process that allows for the deterministic tuning of individual emitters. A tuning range of up to 15 meV is obtained with a precision limited by the laser exposure time. A distinct saturation of the energy shift is observed, which suggests an intermixing mechanism relying on grown-in defects that are subsequently removed from the semiconductor material during annealing. The ability to tune different emitters into resonance with each other will be required for fabricating remote quantum dot-based sources of indistinguishable photons for secure quantum networks. △ Less

Submitted 8 April, 2018; originally announced April 2018.

Bright single InAsP quantum dots at telecom wavelengths in position-controlled InP nanowires: the role of the photonic waveguide

Authors: Sofiane Haffouz, Dan Dalacu, Philip J. Poole, Jean Lapointe, Daniel Poitras, Khaled Mnaymneh, Xiaohua Wu, Marek Korkusinski, Robin L. Williams

Abstract: We report on the site-selected growth of bright single InAsP quantum dots embedded within InP photonic nanowire waveguides emitting at telecom wavelengths. We demonstrate a dramatic dependence of the emission rate on both the emission wavelength and the nanowire diameter. With an appropriately designed waveguide, tailored to the emission wavelength of the dot, an increase in count rate by nearly t… ▽ More We report on the site-selected growth of bright single InAsP quantum dots embedded within InP photonic nanowire waveguides emitting at telecom wavelengths. We demonstrate a dramatic dependence of the emission rate on both the emission wavelength and the nanowire diameter. With an appropriately designed waveguide, tailored to the emission wavelength of the dot, an increase in count rate by nearly two orders of magnitude (0.4kcps to 35kcps) is obtained for quantum dots emitting in the telecom O-band. Using emission-wavelength-optimised waveguides, we demonstrate bright, narrow linewidth emission from single InAsP quantum dots with an unprecedented tuning range from 880nm to 1550nm. These results pave the way towards efficient single photon sources at telecom wavelengths using deterministically grown InAsP/InP nanowire quantum dots. △ Less

Submitted 2 February, 2018; originally announced February 2018.

Path to perfect photon entanglement with a quantum dot

Authors: A. Fognini, A. Ahmadi, M. Zeeshan, J. T. Fokkens, S. J. Gibson, N. Sherlekar, S. J. Daley, D. Dalacu, P. J. Poole, K. D. Jöns, V. Zwiller, M. E. Reimer

Abstract: Realizing perfect two-photon entanglement from quantum dots has been a long-standing scientific challenge. It is generally thought that the nuclear spins limit the entanglement fidelity through spin flip dephasing processes. However, this assumption lacks experimental support. Here, we show dephasing-free two-photon entanglement from an Indium rich single quantum dot comprising of nuclear spin 9/2… ▽ More Realizing perfect two-photon entanglement from quantum dots has been a long-standing scientific challenge. It is generally thought that the nuclear spins limit the entanglement fidelity through spin flip dephasing processes. However, this assumption lacks experimental support. Here, we show dephasing-free two-photon entanglement from an Indium rich single quantum dot comprising of nuclear spin 9/2 when excited quasi-resonantly. This remarkable finding is based on a perfect match between our entanglement measurements with our model that assumes no dephasing and takes into account the detection system's timing jitter and dark counts. We discover that neglecting the detection system is responsible for not reaching perfect entanglement in the past and not the nuclear spins. Therefore, the key to unity entanglement from quantum dots comprises of a resonant excitation scheme and a detection system with ultra-low timing jitter and dark counts. △ Less

Submitted 30 October, 2017; originally announced October 2017.

Ultrafast Coherent Manipulation of Trions in Site-Controlled Nanowire Quantum Dots

Authors: K. G. Lagoudakis, P. L. McMahon, C. Dory, K. A. Fischer, K. Müller, V. Borish, D. Dalacu, P. J. Poole, M. E. Reimer, V. Zwiller, Y. Yamamoto, J. Vučković

Abstract: Physical implementations of large-scale quantum processors based on solid-state platforms benefit from realizations of quantum bits positioned in regular arrays. Self-assembled quantum dots are well-established as promising candidates for quantum optics and quantum information processing, but they are randomly positioned. Site-controlled quantum dots, on the other hand, are grown in pre-defined lo… ▽ More Physical implementations of large-scale quantum processors based on solid-state platforms benefit from realizations of quantum bits positioned in regular arrays. Self-assembled quantum dots are well-established as promising candidates for quantum optics and quantum information processing, but they are randomly positioned. Site-controlled quantum dots, on the other hand, are grown in pre-defined locations, but have not yet been sufficiently developed to be used as a platform for quantum information processing. In this letter we demonstrate all-optical ultrafast complete coherent control of a qubit formed by the single-spin/trion states of a charged site-controlled nanowire quantum dot. Our results show that site-controlled quantum dots in nanowires are promising hosts of charged-exciton qubits, and that these qubits can be cleanly manipulated in the same fashion as has been demonstrated in randomly-positioned quantum dot samples. Our findings suggest that many of the related excitonic qubit experiments that have been performed over the past 15 years may work well in the more scalable site-controlled systems, making them very promising for the realization of quantum hardware. △ Less

Submitted 9 February, 2017; originally announced February 2017.

Journal ref: Optica 3, 1430-1435 (2016)

On-Chip Single-Photon Sifter

Authors: Ali W. Elshaari, Iman Esmaeil Zadeh, Andreas Fognini, Michael E. Reimer, Dan Dalacu, Philip J. Poole, Val Zwiller, Klaus D. Jöns

Abstract: Quantum states of light play a pivotal role in modern science[1] and future photonic applications[2]. While impressive progress has been made in their generation and manipulation with high fidelities, the common table-top approach is reaching its limits for practical quantum applications. Since the advent of integrated quantum nanophotonics[3] different material platforms based on III-V nanostruct… ▽ More Quantum states of light play a pivotal role in modern science[1] and future photonic applications[2]. While impressive progress has been made in their generation and manipulation with high fidelities, the common table-top approach is reaching its limits for practical quantum applications. Since the advent of integrated quantum nanophotonics[3] different material platforms based on III-V nanostructures-, color centers-, and nonlinear waveguides[4-8] as on-chip light sources have been investigated. Each platform has unique advantages and limitations in terms of source properties, optical circuit complexity, and scaling potentials. However, all implementations face major challenges with efficient and tunable filtering of individual quantum states[4], scalable integration and deterministic multiplexing of on-demand selected quantum emitters[9], and on-chip excitation-suppression[10]. Here we overcome all of these challenges with a novel hybrid and scalable nanofabrication approach to generate quantum light on-chip, where selected single III-V quantum emitters are positioned and deterministically integrated in a CMOS compatible circuit[11] with controlled on-chip filtering and excitation-suppression.Furthermore, we demonstrate novel on-chip quantum wavelength division multiplexing, showing tunable routing of single-photons. Our reconfigurable quantum photonic circuits with a foot print one million times smaller than similar table-top approaches, offering outstanding excitation suppression of more than 95 dB and efficient routing of single photons over a bandwidth of 40 nm, are essential to unleash integrated quantum optical technologies full potential. △ Less

Submitted 15 December, 2016; v1 submitted 10 November, 2016; originally announced November 2016.

Comments: 30 pages, 10 figures

Journal ref: Nature Communications, Vol 8, Article number: 379 (2017)

Bright nanoscale source of deterministic entangled photon pairs violating Bell's inequality

Authors: Klaus D. Jöns, Lucas Schweickert, Marijn A. M. Versteegh, Dan Dalacu, Philip J. Poole, Angelo Gulinatti, Andrea Giudice, Val Zwiller, Michael E. Reimer

Abstract: Global, secure quantum channels will require efficient distribution of entangled photons. Long distance, low-loss interconnects can only be realized using photons as quantum information carriers. However, a quantum light source combining both high qubit fidelity and on-demand bright emission has proven elusive. Here, we show a bright photonic nanostructure generating polarization-entangled photon-… ▽ More Global, secure quantum channels will require efficient distribution of entangled photons. Long distance, low-loss interconnects can only be realized using photons as quantum information carriers. However, a quantum light source combining both high qubit fidelity and on-demand bright emission has proven elusive. Here, we show a bright photonic nanostructure generating polarization-entangled photon-pairs that strongly violates Bell's inequality. A highly symmetric InAsP quantum dot generating entangled photons is encapsulated in a tapered nanowire waveguide to ensure directional emission and efficient light extraction. We collect $\sim$200 kHz entangled photon-pairs at the first lens under 80\,MHz pulsed excitation, which is a 20 times enhancement as compared to a bare quantum dot without a photonic nanostructure. The performed Bell test using the Clauser-Horne-Shimony-Holt inequality reveals a clear violation ($S_{\text{CHSH}}>2$) by up to 9.3 standard deviations. By using a novel quasi-resonant excitation scheme at the wurtzite InP nanowire resonance to reduce multi-photon emission, the entanglement fidelity ($F=0.817\,\pm\,0.002$) is further enhanced without temporal post-selection, allowing for the violation of Bell's inequality in the rectilinear-circular basis by 25 standard deviations. Our results on nanowire-based quantum light sources highlight their potential application in secure data communication utilizing measurement-device-independent quantum key distribution and quantum repeater protocols. △ Less

Submitted 15 May, 2017; v1 submitted 13 October, 2015; originally announced October 2015.

Journal ref: Scientific Reports 7, 1700 (2017)

Initialization of a spin qubit in a site-controlled nanowire quantum dot

Authors: Konstantinos G. Lagoudakis, Peter L. McMahon, Kevin A. Fischer, Shruti Puri, Kai Müller, Dan Dalacu, Philip J. Poole, Michael E. Reimer, Val Zwiller, Yoshihisa Yamamoto, Jelena Vučković

Abstract: A fault-tolerant quantum repeater or quantum computer using solid-state spin-based quantum bits will likely require a physical implementation with many spins arranged in a grid. Self-assembled quantum dots (QDs) have been established as attractive candidates for building spin-based quantum information processing devices, but such QDs are randomly positioned, which makes them unsuitable for constru… ▽ More A fault-tolerant quantum repeater or quantum computer using solid-state spin-based quantum bits will likely require a physical implementation with many spins arranged in a grid. Self-assembled quantum dots (QDs) have been established as attractive candidates for building spin-based quantum information processing devices, but such QDs are randomly positioned, which makes them unsuitable for constructing large-scale processors. Recent efforts have shown that quantum dots embedded in nanowires can be deterministically positioned in regular arrays, can store single charges, and have excellent optical properties, but so far there have been no demonstrations of spin qubit operations using nanowire quantum dots. Here we demonstrate optical pum** of individual spins trapped in site-controlled nanowire quantum dots, resulting in high-fidelity spin-qubit initialization. This represents the next step towards establishing spins in nanowire quantum dots as quantum memories suitable for use in a large-scale, fault-tolerant quantum computer or repeater based on all-optical control of the spin qubits. △ Less

Submitted 20 May, 2016; v1 submitted 16 September, 2014; originally announced September 2014.

Journal ref: New Journal of Physics 18, 053024 (2016)

Overcoming power broadening of the quantum dot emission in a pure wurtzite nanowire

Authors: Michael E. Reimer, Gabriele Bulgarini, Reinier W. Heeres, Barbara J. Witek, Marijn A. M. Versteegh, Dan Dalacu, Jean Lapointe, Philip J. Poole, Val Zwiller

Abstract: One of the key challenges in develo** quantum networks is to generate single photons with high brightness, purity, and long temporal coherence. Semiconductor quantum dots potentially satisfy these requirements; however, due to imperfections in the surrounding material, the coherence generally degrades with increasing excitation power yielding a broader emission spectrum. Here we overcome this po… ▽ More One of the key challenges in develo** quantum networks is to generate single photons with high brightness, purity, and long temporal coherence. Semiconductor quantum dots potentially satisfy these requirements; however, due to imperfections in the surrounding material, the coherence generally degrades with increasing excitation power yielding a broader emission spectrum. Here we overcome this power broadening regime and demonstrate the longest coherence at exciton saturation where the detection count rates are highest. We detect single-photon count rates of 460,000 counts per second under pulsed laser excitation while maintaining a single-photon purity of greater than 99%. Importantly, the enhanced coherence is attained with quantum dots in ultraclean wurtzite InP nanowires, where the surrounding charge traps are filled by exciting above the wurtzite InP nanowire bandgap. By raising the excitation intensity, the number of possible charge configurations in the quantum dot environment is reduced, resulting in a narrower emission spectrum. Via Monte Carlo simulations we explain the observed narrowing of the emission spectrum with increasing power. Cooling down the sample to 300 mK, we further enhance the single-photon coherence two-fold as compared to operation at 4.5 K, resulting in a homogeneous coherence time, T2, of 1.2 ns. △ Less

Submitted 10 July, 2014; originally announced July 2014.

Comments: 13 pages, including supplementary information

Journal ref: Phys. Rev. B 93, 195316 (2016)

Observation of strongly entangled photon pairs from a nanowire quantum dot

Authors: Marijn A. M. Versteegh, Michael E. Reimer, Klaus D. Jöns, Dan Dalacu, Philip J. Poole, Angelo Gulinatti, Andrea Giudice, Val Zwiller

Abstract: A bright photon source that combines high-fidelity entanglement, on-demand generation, high extraction efficiency, directional and coherent emission, as well as position control at the nanoscale is required for implementing ambitious schemes in quantum information processing, such as that of a quantum repeater. Still, all of these properties have not yet been achieved in a single device. Semicondu… ▽ More A bright photon source that combines high-fidelity entanglement, on-demand generation, high extraction efficiency, directional and coherent emission, as well as position control at the nanoscale is required for implementing ambitious schemes in quantum information processing, such as that of a quantum repeater. Still, all of these properties have not yet been achieved in a single device. Semiconductor quantum dots embedded in nanowire waveguides potentially satisfy all of these requirements; however, although theoretically predicted, entanglement has not yet been demonstrated for a nanowire quantum dot. Here, we demonstrate a bright and coherent source of strongly entangled photon pairs from a position controlled nanowire quantum dot with a fidelity as high as 0.859 +/- 0.006 and concurrence of 0.80 +/- 0.02. The two-photon quantum state is modified via the nanowire shape. Our new nanoscale entangled photon source can be integrated at desired positions in a quantum photonic circuit, single electron devices and light emitting diodes. △ Less

Submitted 5 November, 2014; v1 submitted 16 May, 2014; originally announced May 2014.

Comments: Article and Supplementary Information with open access published at: http://www.nature.com/ncomms/2014/141031/ncomms6298/full/ncomms6298.html

Journal ref: Nature Communications 5, 5298 (2014)

Polarization entangled photons from quantum dots embedded in nanowires

Authors: Tobias Huber, Ana Predojević, Milad Khoshnegar, Dan Dalacu, Philip J. Poole, Hamed Majedi, Gregor Weihs

Abstract: We present a first measurement of photon polarization entanglement from the biexciton to ground state cascade of a single InAsP quantum dot embedded in an InP nanowire. We observe a fidelity of 0.76(2) to a reference maximally entangled state as well as a concurrence of 0.57(6). We present a first measurement of photon polarization entanglement from the biexciton to ground state cascade of a single InAsP quantum dot embedded in an InP nanowire. We observe a fidelity of 0.76(2) to a reference maximally entangled state as well as a concurrence of 0.57(6). △ Less

Submitted 2 June, 2014; v1 submitted 15 May, 2014; originally announced May 2014.

Journal ref: Nano Lett. 14 (2014), 7107-7114

A Semiconductor Under Insulator Technology in Indium Phosphide

Authors: Khaled Mnaymneh, Dan Dalacu, Simon Frédérick, Jean Lapointe, Philip J. Poole, Robin L. Williams

Abstract: This Letter introduces a Semiconductor-Under-Insulator (SUI) technology in InP for designing strip waveguides that interface InP photonic crystal membrane structures. Strip waveguides in InP-SUI are supported under an atomic layer deposited insulator layer in contrast to strip waveguides in silicon supported on insulator. We show a substantial improvement in optical transmission when using InP-SUI… ▽ More This Letter introduces a Semiconductor-Under-Insulator (SUI) technology in InP for designing strip waveguides that interface InP photonic crystal membrane structures. Strip waveguides in InP-SUI are supported under an atomic layer deposited insulator layer in contrast to strip waveguides in silicon supported on insulator. We show a substantial improvement in optical transmission when using InP-SUI strip waveguides interfaced with localized photonic crystal membrane structures when compared with extended photonic crystal waveguide membranes. Furthermore, SUI makes available various fiber-coupling techniques used in SOI, such as sub-micron coupling, for planar membrane III-V systems. △ Less

Submitted 2 October, 2012; originally announced October 2012.

Influence of electron-acoustic phonon scattering on off-resonant cavity feeding within a strongly coupled quantum-dot cavity system

Authors: S. Hughes, P. Yao, F. Milde, A. Knorr, D. Dalacu, K. Mnaymneh, V. Sazonova, P. J. Poole, G. C. Aers, J. Lapointe, R. Cheriton, R. L. Williams

Abstract: We present a medium-dependent quantum optics approach to describe the influence of electron-acoustic phonon coupling on the emission spectra of a strongly coupled quantum-dot cavity system. Using a canonical Hamiltonian for light quantization and a photon Green function formalism, phonons are included to all orders through the dot polarizability function obtained within the independent Boson model… ▽ More We present a medium-dependent quantum optics approach to describe the influence of electron-acoustic phonon coupling on the emission spectra of a strongly coupled quantum-dot cavity system. Using a canonical Hamiltonian for light quantization and a photon Green function formalism, phonons are included to all orders through the dot polarizability function obtained within the independent Boson model. We derive simple user-friendly analytical expressions for the linear quantum light spectrum, including the influence from both exciton and cavity-emission decay channels. In the regime of semiconductor cavity-QED, we study cavity emission for various exciton-cavity detunings and demonstrate rich spectral asymmetries as well as cavity-mode suppression and enhancement effects. Our technique is nonperturbative, and non-Markovian, and can be applied to study photon emission from a wide range of semiconductor quantum dot structures, including waveguides and coupled cavity arrays. We compare our theory directly to recent and apparently puzzling experimental data for a single site-controlled quantum dot in a photonic crystal cavity and show good agreement as a function of cavity-dot detuning and as a function of temperature. △ Less

Submitted 3 February, 2011; originally announced February 2011.

Comments: Regular Paper, Submitted to PRB, Dec, 2010

Journal ref: Physical Review B 83, 165313 (2011)

Non-linear magnetotransport phenomena in high-mobility two-dimensional electrons in InGaAs/InP and GaAs/AlGaAs

Authors: S. A. Studenikin, G. Granger, A. Kam, A. S. Sachrajda, Z. R. Wasilewski, P. J. Poole

Abstract: This paper reports on the observation and analysis of magnetotransport phenomena in the nonlinear differential resistance $r_{xx}=dV_{xx}/dI$ of high-mobility InGaAs/InP and GaAs/AlGaAs Hall bar samples driven by direct current, $\Idc$. Specifically, it is observed that Shubnikov -de Haas (SdH) oscillations at large filling factors invert their phase at sufficiently large values of $\Idc$. This… ▽ More This paper reports on the observation and analysis of magnetotransport phenomena in the nonlinear differential resistance $r_{xx}=dV_{xx}/dI$ of high-mobility InGaAs/InP and GaAs/AlGaAs Hall bar samples driven by direct current, $\Idc$. Specifically, it is observed that Shubnikov -de Haas (SdH) oscillations at large filling factors invert their phase at sufficiently large values of $\Idc$. This phase inversion is explained as being due to an electron heating effect. In the quantum Hall effect regime the $r_{xx}$ oscillations transform into diamond-shaped patterns with different slopes corresponding to odd and even filling factors. The diamond-shaped features at odd filling factors can be used as a probe to determine spin energy gaps. A Zero Current Anomaly (ZCA) which manifests itself as a narrow dip in the $r_{xx}(\Idc)$ characteristics at zero current, is also observed. The ZCA effect strongly depends upon temperature, vanishing above 1 K while the transport diamonds persist to higher temperatures. The transport diamonds and ZCA are fully reproduced in a higher mobility GaAs/AlGaAs Hall bar structure confirming that these phenomena reflect intrinsic properties of two-dimensional systems. △ Less

Submitted 3 September, 2012; v1 submitted 30 November, 2010; originally announced December 2010.

Comments: Final version, accepted in PRB

Few-electron quantum dots in III-V ternary alloys: role of fluctuations

Authors: G. Granger, S. A. Studenikin, A. Kam, A. S. Sachrajda, P. J. Poole

Abstract: We study experimentally the electron transport properties of gated quantum dots formed in InGaAs/InP and InAsP/InP quantum well structures grown by chemical-beam epitaxy. For the case of the InGaAs quantum well, quantum dots form directly underneath narrow gate electrodes due to potential fluctuations. We measure the Coulomb-blockade diamonds in the few-electron regime of a single quantum dot and… ▽ More We study experimentally the electron transport properties of gated quantum dots formed in InGaAs/InP and InAsP/InP quantum well structures grown by chemical-beam epitaxy. For the case of the InGaAs quantum well, quantum dots form directly underneath narrow gate electrodes due to potential fluctuations. We measure the Coulomb-blockade diamonds in the few-electron regime of a single quantum dot and observe photon-assisted tunneling peaks under microwave irradiation. A singlet-triplet transition at high magnetic field and Coulomb-blockade effects in the quantum Hall regime are also observed. For the InAsP quantum well, an incidental triple quantum dot forms also due to potential fluctuations within a single dot layout. Tunable quadruple points are observed via transport measurements. △ Less

Submitted 8 December, 2010; v1 submitted 27 July, 2010; originally announced July 2010.

Comments: 3.3 pages, 3 figures. Added two new subfigures, new references, and improved the text

Journal ref: Appl. Phys. Lett. 98 , 132107 (2011)

Carrier thermal escape in families of InAs/InP self-assembled quantum dots

Authors: Guillaume Gélinas, Ali Lanacer, Richard Leonelli, Remo A. Masut, Sylvain Raymond, Philip J. Poole

Abstract: We investigate the thermal quenching of the multimodal photoluminescence from InAs/InP (001) self-assembled quantum dots. The temperature evolution of the photoluminescence spectra of two samples is followed from 10 K to 300 K. We develop a coupled rate-equation model that includes the effect of carrier thermal escape from a quantum dot to the wetting layer and to the InP matrix, followed by tra… ▽ More We investigate the thermal quenching of the multimodal photoluminescence from InAs/InP (001) self-assembled quantum dots. The temperature evolution of the photoluminescence spectra of two samples is followed from 10 K to 300 K. We develop a coupled rate-equation model that includes the effect of carrier thermal escape from a quantum dot to the wetting layer and to the InP matrix, followed by transport, recapture or non-radiative recombination. Our model reproduces the temperature dependence of the emission of each family of quantum dots with a single set of parameters. We find that the main escape mechanism of the carriers confined in the quantum dots is through thermal emission to the wetting layer. The activation energy for this process is found to be close to one-half the energy difference between that of a given family of quantum dots and that of the wetting layer as measured by photoluminescence excitation experiments. This indicates that electron and holes exit the InAs quantum dots as correlated pairs. △ Less

Submitted 2 October, 2009; originally announced October 2009.

All-optical conditional logic with a nonlinear photonic crystal nanocavity

Authors: Murray W. McCutcheon, Georg W. Rieger, Jeff F. Young, Dan Dalacu, Philip J. Poole, Robin L. Williams

Abstract: We demonstrate tunable frequency-converted light mediated by a chi-(2) nonlinear photonic crystal nanocavity. The wavelength-scale InP-based cavity supports two closely-spaced localized modes near 1550 nm which are resonantly excited by a 130 fs laser pulse. The cavity is simultaneously irradiated with a non-resonant probe beam, giving rise to rich second-order scattering spectra reflecting nonl… ▽ More We demonstrate tunable frequency-converted light mediated by a chi-(2) nonlinear photonic crystal nanocavity. The wavelength-scale InP-based cavity supports two closely-spaced localized modes near 1550 nm which are resonantly excited by a 130 fs laser pulse. The cavity is simultaneously irradiated with a non-resonant probe beam, giving rise to rich second-order scattering spectra reflecting nonlinear mixing of the different resonant and non-resonant components. In particular, we highlight the radiation at the sum frequencies of the probe beam and the respective cavity modes. This would be a useful, minimally-invasive monitor of the joint occupancy state of multiple cavities in an integrated optical circuit. △ Less

Submitted 30 September, 2009; originally announced October 2009.

Comments: 4 pages, 4 figures

Electron transport in gated InGaAs and InAsP quantum well wires in selectively-grown InP ridge structures

Authors: G. Granger, A. Kam, S. A. Studenikin, A. S. Sachrajda, G. C. Aers, R. L. Williams, P. J. Poole

Abstract: The purpose of this work is to fabricate ribbon-like InGaAs and InAsP wires embedded in InP ridge structures and investigate their transport properties. The InP ridge structures that contain the wires are selectively grown by chemical beam epitaxy (CBE) on pre-patterned InP substrates. To optimize the growth and micro-fabrication processes for electronic transport, we explore the Ohmic contact r… ▽ More The purpose of this work is to fabricate ribbon-like InGaAs and InAsP wires embedded in InP ridge structures and investigate their transport properties. The InP ridge structures that contain the wires are selectively grown by chemical beam epitaxy (CBE) on pre-patterned InP substrates. To optimize the growth and micro-fabrication processes for electronic transport, we explore the Ohmic contact resistance, the electron density, and the mobility as a function of the wire width using standard transport and Shubnikov-de Haas measurements. At low temperatures the ridge structures reveal reproducible mesoscopic conductance fluctuations. We also fabricate ridge structures with submicron gate electrodes that exhibit non-leaky gating and good pinch-off characteristics acceptable for device operation. Using such wrap gate electrodes, we demonstrate that the wires can be split to form quantum dots evidenced by Coulomb blockade oscillations in transport measurements. △ Less

Submitted 11 November, 2009; v1 submitted 31 August, 2009; originally announced August 2009.

Comments: 5 pages, 4 figures, additional references and improved Fig. 4c, MSS-14 conference, submitted to Physica E

Journal ref: Physica E 42, 2622 (2010)

Tuning the exciton g-factor in single InAs/InP quantum dots

Authors: D. Kim, W. Sheng, P. J. Poole, D. Dalacu, J. Lefebvre, J. Lapointe, M. E. Reimer, G. C. Aers, R. L. Williams

Abstract: Photoluminescence data from single, self-assembled InAs/InP quantum dots in magnetic fields up to 7 T are presented. Exciton g-factors are obtained for dots of varying height, corresponding to ground state emission energies ranging from 780 meV to 1100 meV. A monotonic increase of the g-factor from -2 to +1.2 is observed as the dot height decreases. The trend is well reproduced by sp3 tight bind… ▽ More Photoluminescence data from single, self-assembled InAs/InP quantum dots in magnetic fields up to 7 T are presented. Exciton g-factors are obtained for dots of varying height, corresponding to ground state emission energies ranging from 780 meV to 1100 meV. A monotonic increase of the g-factor from -2 to +1.2 is observed as the dot height decreases. The trend is well reproduced by sp3 tight binding calculations, which show that the hole g-factor is sensitive to confinement effects through orbital angular momentum mixing between the light-hole and heavy-hole valence bands. We demonstrate tunability of the exciton g-factor by manipulating the quantum dot dimensions using pyramidal InP nanotemplates. △ Less

Submitted 10 December, 2008; v1 submitted 16 September, 2008; originally announced September 2008.

Voltage Induced Hidden Symmetry and Photon Entanglement Generation in a Single, Site-Selected Quantum Dot

Authors: Michael E. Reimer, Marek Korkusinski, Jacques Lefebvre, Jean Lapointe, Philip J. Poole, Geof C. Aers, Dan Dalacu, W. Ross McKinnon, Simon Frederick, Pawel Hawrylak, Robin L. Williams

Abstract: Present proposals for the realisation of entangled photon pair sources using the radiative decay of the biexciton in semiconductor quantum dots are limited by the need to enforce degeneracy of the two intermediate, single exciton states. We show how this requirement is lifted if the biexciton binding energy can be tuned to zero and we demonstrate this unbinding of the biexciton in a single, pre-… ▽ More Present proposals for the realisation of entangled photon pair sources using the radiative decay of the biexciton in semiconductor quantum dots are limited by the need to enforce degeneracy of the two intermediate, single exciton states. We show how this requirement is lifted if the biexciton binding energy can be tuned to zero and we demonstrate this unbinding of the biexciton in a single, pre-positioned InAs quantum dot subject to a lateral electric field. Full Configuration-Interaction calculations are presented that reveal how the biexciton is unbound through manipulation of the electron-hole Coulomb interaction and the consequent introduction of Hidden Symmetry. △ Less

Submitted 7 June, 2007; originally announced June 2007.

Comments: 4 pages, 4 figures submitted to Physical Review Letters

Second-order nonlinear mixing in planar photonic crystal microcavities

Authors: Murray W. McCutcheon, Georg W. Rieger, Jeff F. Young, Dan Dalacu, Simon Frederick, Philip J. Poole, Robin L. Williams

Abstract: Second-harmonic and sum-frequency mixing phenomena associated with 3D-localized photonic modes are studied in InP-based planar photonic crystal microcavities excited by short-pulse radiation near 1550 nm. Three-missing-hole microcavities that support two closely-spaced modes exhibit rich second-order scattering spectra that reflect intra- and inter-mode mixing via the bulk InP chi(2) during ring… ▽ More Second-harmonic and sum-frequency mixing phenomena associated with 3D-localized photonic modes are studied in InP-based planar photonic crystal microcavities excited by short-pulse radiation near 1550 nm. Three-missing-hole microcavities that support two closely-spaced modes exhibit rich second-order scattering spectra that reflect intra- and inter-mode mixing via the bulk InP chi(2) during ring-down after excitation by the broadband, resonant pulse. Simultaneous excitation with a non-resonant source results in tunable second-order radiation from the microcavity. △ Less

Submitted 12 December, 2006; originally announced December 2006.

Comments: 6 pages, 4 figures

Second-Order Nonlinear Mixing of Two Modes in a Planar Photonic Crystal Microcavity

Authors: Murray W. McCutcheon, Jeff F. Young, Georg W. Rieger, Dan Dalacu, Simon Frederick, Philip J. Poole, Geof C. Aers, Robin L. Williams

Abstract: Polarization-resolved second-harmonic spectra are obtained from the resonant modes of a two-dimensional planar photonic crystal microcavity patterned in a free-standing InP slab. The photonic crystal microcavity is comprised of a single missing-hole defect in a hexagonal photonic crystal host formed with elliptically-shaped holes. The cavity supports two orthogonally-polarized resonant modes spl… ▽ More Polarization-resolved second-harmonic spectra are obtained from the resonant modes of a two-dimensional planar photonic crystal microcavity patterned in a free-standing InP slab. The photonic crystal microcavity is comprised of a single missing-hole defect in a hexagonal photonic crystal host formed with elliptically-shaped holes. The cavity supports two orthogonally-polarized resonant modes split by 60 wavenumbers. Sum-frequency data are reported from the nonlinear interaction of the two coherently excited modes, and the polarization dependence is explained in terms of the nonlinear susceptibility tensor of the host InP. △ Less

Submitted 5 January, 2006; v1 submitted 4 January, 2006; originally announced January 2006.

Comments: 7 pages, 8 Postscript figures, to be presented at Photonics West Jan. 25

Electron spin-orbit splitting in InGaAs/InP quantum well studied by means of the weak antilocalization and spin-zero effects in tilted magnetic fields

Authors: S. A. Studenikin, P. T. Coleridge, G. Yu, P. J. Poole

Abstract: The coupling between Zeeman spin splitting and Rashba spin-orbit terms has been studied experimentally in a gated InGaAs/InP quantum well structure by means of simultaneous measurements of the weak antilocalization (WAL) effect and beating in the SdH oscillations. The strength of the Zeeman splitting was regulated by tilting the magnetic field with the spin-zeros in the SdH oscillations, which a… ▽ More The coupling between Zeeman spin splitting and Rashba spin-orbit terms has been studied experimentally in a gated InGaAs/InP quantum well structure by means of simultaneous measurements of the weak antilocalization (WAL) effect and beating in the SdH oscillations. The strength of the Zeeman splitting was regulated by tilting the magnetic field with the spin-zeros in the SdH oscillations, which are not always present, being enhanced by the tilt. In tilted fields the spin-orbit and Zeeman splittings are not additive, and a simple expression is given for the energy levels. The Rashba parameter and the electron g-factor were extracted from the position of the spin zeros in tilted fields. A good agreement is obtained for the spin-orbit coupling strength from the spin-zeros and weak antilocalization measurements. △ Less

Submitted 25 August, 2005; v1 submitted 12 August, 2005; originally announced August 2005.

Comments: Accepted for publication in Semiconductors Science and Technology

Weak antilocalization in a strained InGaAs/InP quantum well structure

Authors: S. A. Studenikin, P. T. Coleridge, P. J. Poole

Abstract: Weak antilocalization (WAL) effect due to the interference corrections to the conductivity has been studied experimentally in a strained InGaAs/InP quantum well structure. From measurements in tilted magnetic filed, it was shown that both weak localization and WAL features depend only on the normal component of the magnetic field for tilt angles less than 84 degrees. Weak antilocalization effect… ▽ More Weak antilocalization (WAL) effect due to the interference corrections to the conductivity has been studied experimentally in a strained InGaAs/InP quantum well structure. From measurements in tilted magnetic filed, it was shown that both weak localization and WAL features depend only on the normal component of the magnetic field for tilt angles less than 84 degrees. Weak antilocalization effect showed non-monotonous dependence on the gate voltage which could not be explained by either Rashba or Dresselhouse mechanisms of the spin-orbit coupling. To describe magnetic field dependence of the conductivity, it was necessary to assume that spin-orbit scattering time depends on the external magnetic field which quenches the spin precession around effective, spin-orbit related, magnetic fields. △ Less

Submitted 5 November, 2003; originally announced November 2003.

Comments: Presented at EP2DS 2003 (Nara), to be published in Physica E

Self-Assembled InAs Quantum Dots on Patterned InP Substrates

Authors: J. Lefebvre, P. J. Poole, J. Fraser, G. C. Aers, D. Chithrani, R. L. Williams

Abstract: The size distribution of self-assembled InAs quantum dots grown on (001) InP under the Stranski-Krastanow growth mode is controlled using selective area/chemical beam epitaxy, which allows the formation of quantum dots at specific locations. As the dimensions of the patterned areas are decreased from 1000 nm down to 50 nm or less, scanning electron microscopy reveals a gradual increase in the sp… ▽ More The size distribution of self-assembled InAs quantum dots grown on (001) InP under the Stranski-Krastanow growth mode is controlled using selective area/chemical beam epitaxy, which allows the formation of quantum dots at specific locations. As the dimensions of the patterned areas are decreased from 1000 nm down to 50 nm or less, scanning electron microscopy reveals a gradual increase in the spatial correlation between quantum dots, which leads to the formation of ordered arrays for dimensions below 200 nm. △ Less

Submitted 22 December, 2000; originally announced December 2000.

Comments: 5 pages, 5 figures