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Isolating the Nonlinear Optical Response of a MoS$_2$ Monolayer under Extreme Screening of a Metal Substrate
Authors:
Tao Yang,
Stephan Sleziona,
Erik Pollmann,
Eckart Hasselbrink,
Peter Kratzer,
Marika Schleberger,
R. Kramer Campen,
Yu** Tong
Abstract:
Transition metal dichalcogenides (TMDCs) monolayers, as two-dimensional (2D) direct bandgap semiconductors, hold promise for advanced optoelectronic and photocatalytic devices. Interaction with three-dimensional (3D) metals, like Au, profoundly affects their optical properties, posing challenges in characterizing the monolayer's optical responses within the semiconductor-metal junction. In this st…
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Transition metal dichalcogenides (TMDCs) monolayers, as two-dimensional (2D) direct bandgap semiconductors, hold promise for advanced optoelectronic and photocatalytic devices. Interaction with three-dimensional (3D) metals, like Au, profoundly affects their optical properties, posing challenges in characterizing the monolayer's optical responses within the semiconductor-metal junction. In this study, using precise polarization-controlled final-state sum frequency generation (FS-SFG), we successfully isolated the optical responses of a MoS$_2$ monolayer from a MoS$_2$/Au junction. The resulting SFG spectra exhibit a linear lineshape, devoid of A or B exciton features, attributed to the strong dielectric screening and substrate induced do**. The linear lineshape illustrates the expected constant density of states (DOS) at the band edge of the 2D semiconductor, a feature often obscured by excitonic interactions in week-screening conditions such as in a free-standing monolayer. Extrapolation yields the onset of a direct quasiparticle bandgap of about $1.65\pm0.20$ eV, indicating a strong bandgap renormalization. This study not only enriches our understanding of the optical responses of a 2D semiconductor in extreme screening conditions but also provides a critical reference for advancing 2D semiconductor-based photocatalytic applications.
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Submitted 30 October, 2023;
originally announced October 2023.
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Gas dependent hysteresis in MoS$_2$ field effect transistors
Authors:
F. Urban,
F. Giubileo,
A. Grillo,
L. Iemmo,
G. Luongo,
M. Passacantando,
T. Foller,
L. Madauß,
E. Pollmann,
M. P. Geller,
D. Oing,
M. Schleberger,
A. Di Bartolomeo
Abstract:
We study the effect of electric stress, gas pressure and gas type on the hysteresis in the transfer characteristics of monolayer molybdenum disulfide (MoS2) field effect transistors. The presence of defects and point vacancies in the MoS2 crystal structure facilitates the adsorption of oxygen, nitrogen, hydrogen or methane, which strongly affect the transistor electrical characteristics. Although…
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We study the effect of electric stress, gas pressure and gas type on the hysteresis in the transfer characteristics of monolayer molybdenum disulfide (MoS2) field effect transistors. The presence of defects and point vacancies in the MoS2 crystal structure facilitates the adsorption of oxygen, nitrogen, hydrogen or methane, which strongly affect the transistor electrical characteristics. Although the gas adsorption does not modify the conduction type, we demonstrate a correlation between hysteresis width and adsorption energy onto the MoS2 surface. We show that hysteresis is controllable by pressure and/or gas type. Hysteresis features two well-separated current levels, especially when gases are stably adsorbed on the channel, which can be exploited in memory devices.
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Submitted 27 June, 2023;
originally announced June 2023.
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Dynamic Growth/Etching Model for the Synthesis of Two-Dimensional Transition Metal Dichalcogenides via Chemical Vapour Deposition
Authors:
E. Pollmann,
A. Maas,
D. Marnold,
A. Hucht,
R. Neubieser,
M. Stief,
L. Madauß,
M. Schleberger
Abstract:
The preparation of two-dimensional transition metal dichalcogenides on an industrially relevant scale will rely heavily on bottom-up methods such as chemical vapour deposition. In order to obtain sufficiently large quantities of high-quality material, a knowledge-based optimization strategy for the synthesis process must be developed. A major problem that has not yet been considered is the degrada…
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The preparation of two-dimensional transition metal dichalcogenides on an industrially relevant scale will rely heavily on bottom-up methods such as chemical vapour deposition. In order to obtain sufficiently large quantities of high-quality material, a knowledge-based optimization strategy for the synthesis process must be developed. A major problem that has not yet been considered is the degradation of materials by etching during synthesis due to the high growth temperatures. To address this problem, we introduce a mathematical model that accounts for both growth and, for the first time, etching to describe the synthesis of two-dimensional transition metal dichalcogenides. We consider several experimental observations that lead to a differential equation based on several terms corresponding to different supply mechanisms, describing the time-dependent change in flake size. By solving this equation and fitting two independently obtained experimental data sets, we find that the flake area is the leading term in our model. We show that the differential equation can be solved analytically when only this term is considered, and that this solution provides a general description of complex growth and shrinkage phenomena. Physically, the dominance suggests that the supply of material via the flake itself contributes most to its net growth. This finding also implies a predominant interplay between insertion and release of atoms and their motion in the form of a highly dynamic process within the flake. In contrast to previous assumptions, we show that the flake edges do not play an important role in the actual size change of the two-dimensional transition metal dichalcogenide flakes during chemical vapour deposition.
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Submitted 20 January, 2022;
originally announced January 2022.
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Lifetime of Excitons in Janus Monolayer MoSSe Prepared from Exfoliated MoSe_2
Authors:
Jennifer Schmeink,
Vladislav Musytschuk,
Erik Pollmann,
Stephan Sleziona,
Andre Maas,
Marika Schleberger
Abstract:
Janus monolayer transition metal dichalcogenides, where one of the two chalcogen layers is substituted with a different kind of chalcogen atoms, are pushing the properties of two dimensional materials into new territories. Yet only little is known about this new kind of material class, mainly due to the challenging synthesis. In this work we propose a method to prepare high quality Janus MoSSe mon…
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Janus monolayer transition metal dichalcogenides, where one of the two chalcogen layers is substituted with a different kind of chalcogen atoms, are pushing the properties of two dimensional materials into new territories. Yet only little is known about this new kind of material class, mainly due to the challenging synthesis. In this work we propose a method to prepare high quality Janus MoSSe monolayers from as-exfoliated MoSe2 by thermal sulfurization. With this we aim to pave a way for more exotic Janus monolayers, which have been out of the experimental reach thus far. The synthesized MoSSe is diligently characterized by room- and low-temperature Raman and photoluminescence spectroscopy, atomic force microscopy correlated with Raman map**s, and time-correlated single-photon counting. The latter providing new information on the lifetime of excitons in Janus MoSSe monolayers. In addition, we report an enhanced trion formation at low temperatures and a relatively high excitonic transition energy that is indicative of less defect states and strain, and therefore a high sample quality.
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Submitted 21 December, 2021;
originally announced December 2021.
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Gate-controlled field emission current from MoS$_2$ nanosheets
Authors:
Aniello Pelella,
Alessandro Grillo,
Francesca Urban,
Filippo Giubileo,
Maurizio Passacantando,
Erik Pollmann,
Stephan Sleziona,
Marika Schleberger,
Antonio Di Bartolomeo
Abstract:
Monolayer molybdenum disulfide (MoS$_2$) nanosheets, obtained via chemical vapor deposition onto SiO$_2$/Si substrates, are exploited to fabricate field-effect transistors with n-type conduction, high on/off ratio, steep subthreshold slope and good mobility. The transistor channel conductance increases with the reducing air pressure due to oxygen and water desorption. Local field emission measurem…
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Monolayer molybdenum disulfide (MoS$_2$) nanosheets, obtained via chemical vapor deposition onto SiO$_2$/Si substrates, are exploited to fabricate field-effect transistors with n-type conduction, high on/off ratio, steep subthreshold slope and good mobility. The transistor channel conductance increases with the reducing air pressure due to oxygen and water desorption. Local field emission measurements from the edges of the MoS$_2$ nanosheets are performed in high vacuum using a tip-shaped anode. It is demonstrated that the voltage applied to the Si substrate back-gate modulates the field emission current. Such a finding, that we attribute to gate-bias lowering of the MoS$_2$ electron affinity, enables a new field-effect transistor based on field emission.
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Submitted 22 August, 2020;
originally announced August 2020.
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Apparent Differences between Single Layer Molybdenum Disulfide Fabricated via Chemical Vapor Deposition and Exfoliation
Authors:
E. Pollmann,
L. Madauß,
S. Schumacher,
U. Kumar,
F. Heuvel,
C. vom Ende,
S. Yilmaz,
S. Gündörmüs,
M. Schleberger
Abstract:
Innovative applications based on two-dimensional solids require cost-effective fabrication processes resulting in large areas of high quality materials. Chemical vapour deposition is among the most promising methods to fulfill these requirements. However, for 2D materials prepared in this way it is generally assumed that they are of inferior quality in comparison to the exfoliated 2D materials com…
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Innovative applications based on two-dimensional solids require cost-effective fabrication processes resulting in large areas of high quality materials. Chemical vapour deposition is among the most promising methods to fulfill these requirements. However, for 2D materials prepared in this way it is generally assumed that they are of inferior quality in comparison to the exfoliated 2D materials commonly used in basic research. In this work we challenge this assumption and aim to quantify the differences in quality for the prototypical transition metal dichalcogenide MoS$_2$. To this end single layers of MoS$_2$ prepared by different techniques (exfoliation, grown by different chemical vapor deposition methods, transfer techniques, and as vertical heterostructure with graphene) are studied by Raman and photoluminescence spectroscopy, complemented by atomic force microscopy. We demonstrate that as-prepared MoS$_2$, directly grown on SiO$_2$, differs from exfoliated MoS$_2$ in terms of higher photoluminescence, lower electron concentration, and increased strain. As soon as a water film is intercalated (e.g., by transfer) underneath the grown MoS$_2$, in particular the (opto-)electronic properties become practically identical to those of exfoliated MoS$_2$. A comparison of the two most common precursors shows that the growth with MoO$_3$ causes greater strain and/or defect density deviations than growth with ammonium heptamolybdate. As part of a heterostructure directly grown MoS$_2$ interacts much stronger with the substrate, and in this case an intercalated water film does not lead to the complete decoupling, which is typical for exfoliation or transfer. Our work shows that the supposedly poorer quality of grown 2D transition metal dichalcogenides is indeed a misconception.
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Submitted 10 June, 2020;
originally announced June 2020.
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Electron irradiation of metal contacts in monolayer MoS$_2$ Field-Effect Transistors
Authors:
A. Pelella,
O. Kharsah,
A. Grillo,
F. Urban,
M. Passacantando,
F. Giubileo,
L. Iemmo,
S. Sleziona,
E. Pollmann,
L. Madauß,
M. Schleberger,
A. Di Bartolomeo
Abstract:
This work deals with the electron beam irradiation of the Schottky metal contacts in monolayer molybdenum disulfide (MoS$_2$) field-effect transistors (FETs). We show that the exposure of the Ti/Au source/drain leads to an electron beam improves the transistor conductance. We simulate the path of the electrons in the device and show that most of the beam energy is absorbed in the metal contacts. H…
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This work deals with the electron beam irradiation of the Schottky metal contacts in monolayer molybdenum disulfide (MoS$_2$) field-effect transistors (FETs). We show that the exposure of the Ti/Au source/drain leads to an electron beam improves the transistor conductance. We simulate the path of the electrons in the device and show that most of the beam energy is absorbed in the metal contacts. Hence, we propose that the transistor current enhancement is due to thermally induced interfacial reactions that lower the contact Schottky barriers. We also show that the electron beam conditioning of contacts is permanent, while the irradiation of the channel can produce transient effects.
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Submitted 2 April, 2020;
originally announced April 2020.
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Molybdenum Disulphide Nanoflakes Grown by Chemical Vapour Deposition on Graphite: Nucleation, Orientation, and Charge Transfer
Authors:
Erik Pollmann,
Juliana M. Morbec,
Lukas Madauß,
Lara Bröckers,
Peter Kratzer,
Marika Schleberger
Abstract:
Two-dimensional molybdenum disulphide on graphene grown by chemical vapour deposition is a promising van der Waals system for applications in optoelectronics and catalysis. To extend the fundamental understanding of growth and intrinsic properties of molybdenum disulphide on graphene, molybdenum disulphide on highly oriented pyrolytic graphite is a suitable model system. Here we show, experimental…
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Two-dimensional molybdenum disulphide on graphene grown by chemical vapour deposition is a promising van der Waals system for applications in optoelectronics and catalysis. To extend the fundamental understanding of growth and intrinsic properties of molybdenum disulphide on graphene, molybdenum disulphide on highly oriented pyrolytic graphite is a suitable model system. Here we show, experimentally and by density-functional-theory calculations, that molybdenum disulphide flakes grow in two orientations. One of the orientations is energetically preferred, the other one is rotated by 30 degree. Because of a high energy barrier confirmed by our calculations both orientations are stable at room temperature and their switching can only be forced by external stimuli, i.e. by a scanning tunneling microscope tip. Combined Kelvin probe microscopy and Raman spectroscopy measurements show that the flakes with a typical size of a few hundred nanometers are less doped than the often studied exfoliated molybdenum disulphide single layer.
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Submitted 15 October, 2019;
originally announced October 2019.
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Perforating freestanding molybdenum disulfide monolayers with highly charged ions
Authors:
Roland Kozubek,
Mukesh Tripathi,
Mahdi Ghorbani-Asl,
Silvan Kretschmer,
Lukas Madauß,
Erik Pollmann,
Maria O'Brien,
Niall McEvoy,
Ursula Ludacka,
Toma Susi,
Georg S. Duesberg,
Richard A. Wilhelm,
Arkady V. Krasheninnikov,
Jani Kotakoski,
Marika Schleberger
Abstract:
Porous single layer molybdenum disulfide (MoS$_2$) is a promising material for applications such as DNA sequencing and water desalination. In this work, we introduce irradiation with highly charged ions (HCIs) as a new technique to fabricate well-defined pores in MoS$_2$. Surprisingly, we find a linear increase of the pore creation efficiency over a broad range of potential energies. Comparison to…
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Porous single layer molybdenum disulfide (MoS$_2$) is a promising material for applications such as DNA sequencing and water desalination. In this work, we introduce irradiation with highly charged ions (HCIs) as a new technique to fabricate well-defined pores in MoS$_2$. Surprisingly, we find a linear increase of the pore creation efficiency over a broad range of potential energies. Comparison to atomistic simulations reveals the critical role of energy deposition from the ion to the material through electronic excitation in the defect creation process, and suggests an enrichment in molybdenum in the vicinity of the pore edges at least for ions with low potential energies. Analysis of the irradiated samples with atomic resolution scanning transmission electron microscopy reveals a clear dependence of the pore size on the potential energy of the projectiles, establishing irradiation with highly charged ions as an effective method to create pores with narrow size distributions and radii between ca. 0.3 and 3 nm.
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Submitted 2 July, 2019;
originally announced July 2019.
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Evolution of the disk of pi Aqr: from near-disappearance to a strong maximum
Authors:
Y. Naze,
G. Rauw,
J . Guarro Flo,
A. De Bruin,
O. Garde,
O. Thizy,
F. Houpert,
E. Pollmann,
C. J. Sawicki,
M. Leonardi,
M. Moll,
C. T. Quandt,
P. Berardi,
T. Lester,
P. Fosanelli,
A. Favaro,
J. N. Terry,
K. Graham,
B. Mauclaire,
T. Bohlsen,
M. Pujol,
E. Bertrand,
E. Bryssinck,
V. Desnoux,
P. Lailly
, et al. (8 additional authors not shown)
Abstract:
Some Be stars display important variability of the strength of the emission lines formed in their disk. This is notably the case of pi Aqr. We present here the recent evolution of the Be disk in this system thanks to spectra collected by amateur spectroscopists since the end of 2013. A large transition occurred: the emission linked to the Be disk nearly disappeared in January 2014, but the disk ha…
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Some Be stars display important variability of the strength of the emission lines formed in their disk. This is notably the case of pi Aqr. We present here the recent evolution of the Be disk in this system thanks to spectra collected by amateur spectroscopists since the end of 2013. A large transition occurred: the emission linked to the Be disk nearly disappeared in January 2014, but the disk has recovered, with a line strength now reaching levels only seen during the active phase of 1950--1990. In parallel to this change in strength occurs a change of disk structure, notably involving the disappearance of the strong asymmetry responsible for the V/R modulation.
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Submitted 21 June, 2019;
originally announced June 2019.
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Doppler tomography of the circumstellar disk of π Aquarii
Authors:
S. V. Zharikov,
A. S. Miroshnichenko,
E. Pollmann,
S. Danford,
K. S. Bjorkman,
N. D. Morrison,
A. Favaro,
J. Guarro Flo,
J. N. Terry,
V. Desnoux,
T. Garrel,
G. Martineau,
Y. Buchet,
S. Ubaud,
B. Mauclaire,
H. Kalbermatten,
C. Buil,
C. J. Sawicki,
T. Blank,
O. Garde
Abstract:
The work is aimed at a study of the circumstellar disk of the bright classical binary Be star π Aqr. We analysed variations of a double-peaked profile of the Hα emission line in the spectrum of π Aqr that was observed in many phases during ~40 orbital cycles in 2004--2013. We applied the Discrete Fourier Transform (DFT) method to search for periodicity in the peak intensity (V/R) ratio. Doppler to…
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The work is aimed at a study of the circumstellar disk of the bright classical binary Be star π Aqr. We analysed variations of a double-peaked profile of the Hα emission line in the spectrum of π Aqr that was observed in many phases during ~40 orbital cycles in 2004--2013. We applied the Discrete Fourier Transform (DFT) method to search for periodicity in the peak intensity (V/R) ratio. Doppler tomography was used to study the structure of the disk around the primary. The dominant frequency in the power spectrum of the Hα V/R ratio is 0.011873 day^-1 that correspond to a period of 84.2(2) days and is in agreement with the earlier determined orbital period of the system, Porb=84.1 days. The V/R ratio shows a sinusoidal variation phase-locked with the orbital period. Doppler maps of all our spectra show a non-uniform structure of the disk around the primary: a ring with the inner and outer radii at Vin~ 450 km/s and Vout~ 200km/s, respectively, along with an extended stable region (spot) at V_x ~ 225 km/s and V_y~100 km/s. The disk radius of ~ 65 Rsun = 0.33 AU was estimated assuming Keplerian motion of a particle on a circular orbit at the disk outer edge.
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Submitted 4 December, 2013; v1 submitted 24 October, 2013;
originally announced October 2013.
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The 2011 Periastron Passage of the Be Binary delta Scorpii
Authors:
A. S. Miroshnichenko,
A. V. Pasechnik,
N. Manset,
A. C. Carciofi,
Th. Rivinius,
S. Stefl,
V. V. Gvaramadze,
J. Ribeiro,
A. Fernando,
T. Garrel,
J. H. Knapen,
C. Buil,
B. Heathcote,
E. Pollmann,
B. Mauclaire,
O. Thizy,
J. Martin,
S. V. Zharikov,
A. T. Okazaki,
T. L. Gandet,
T. Eversberg,
N. Reinecke
Abstract:
We describe the results of the world-wide observing campaign of the highly eccentric Be binary system delta Scorpii 2011 periastron passage which involved professional and amateur astronomers. Our spectroscopic observations provided a precise measurement of the system orbital period at 10.8092+/- 0.0005 years. Fitting of the He II 4686A line radial velocity curve determined the periastron passage…
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We describe the results of the world-wide observing campaign of the highly eccentric Be binary system delta Scorpii 2011 periastron passage which involved professional and amateur astronomers. Our spectroscopic observations provided a precise measurement of the system orbital period at 10.8092+/- 0.0005 years. Fitting of the He II 4686A line radial velocity curve determined the periastron passage time on 2011 July 3, UT 9:20 with a 0.9--day uncertainty. Both these results are in a very good agreement with recent findings from interferometry. We also derived new evolutionary masses of the binary components (13 and 8.2 Msun) and a new distance of 136 pc from the Sun, consistent with the HIPPARCOS parallax. The radial velocity and profile variations observed in the H_alpha line near the 2011 periastron reflected the interaction of the secondary component and the circumstellar disk around the primary component. Using these data, we estimated a disk radius of 150 Rsun. Our analysis of the radial velocity variations measured during the periastron passage time in 2000 and 2011 along with those measured during the 20th century, the high eccentricity of the system, and the presence of a bow shock-like structure around it suggest that delta Sco might be a runaway triple system. The third component should be external to the known binary and move on an elliptical orbit that is tilted by at least 40 degree with respect to the binary orbital plane for such a system to be stable and responsible for the observed long-term radial velocity variations.
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Submitted 16 February, 2013;
originally announced February 2013.
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The relationship between gamma Cassiopeiae's X-ray emission and its circumstellar environment
Authors:
M. A. Smith,
R. Lopes de Oliveira,
C. Motch,
G. W. Henry,
N. D. Richardson,
K. S. Bjorkman,
Ph. Stee,
D. Mourard,
J. D. Monnier,
X. Che,
R. Buecke,
E. Pollmann,
D. R. Gies,
G. H. Schaefer,
T. ten Brummelaar,
H. A. McAlister,
N. H. Turner,
J. Sturmann,
L. Sturmann,
S. T. Ridgway
Abstract:
γCas is the prototypical classical Be star and is best known for its variable hard X-ray emission. To elucidate the reasons for this emission, we mounted a multiwavelength campaign in 2010 centered around 4 XMM observations. The observational techniques included long baseline optical interferometry (LBOI), monitoring by an Automated Photometric Telescope and Halpha observations. Because gamma Cas…
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γCas is the prototypical classical Be star and is best known for its variable hard X-ray emission. To elucidate the reasons for this emission, we mounted a multiwavelength campaign in 2010 centered around 4 XMM observations. The observational techniques included long baseline optical interferometry (LBOI), monitoring by an Automated Photometric Telescope and Halpha observations. Because gamma Cas is also known to be in a binary, we measured Halpha radial velocities and redetermined its period as 203.55+/-0.2 days and an eccentricity near zero. The LBOI observations suggest that the star's decretion disk was axisymmetric in 2010, has an inclination angle near 45^o, and a larger radius than previously reported. The Be star began an "outburst" at the beginning of our campaign, made visible by a disk brightening and reddening during our campaign. Our analyses of the new high resolution spectra disclosed many attributes found from spectra obtained in 2001 (Chandra) and 2004 (XMM). As well as a dominant hot 14 keV thermal component, these familiar ones included: (i) a fluorescent feature of Fe K stronger than observed at previous times, (ii) strong lines of N VII and Ne XI lines indicative of overabundances, and (iii) a subsolar Fe abundance from K-shell lines but a solar abundance from L-shell ions. We also found that 2 absorption columns are required to fit the continuum. While the first one maintained its historical average of 1X10^21 cm^-2, the second was very large and doubled to 7.4X10^23 cm^-2 during our X-ray observations. Although we found no clear relation between this column density and orbital phase, it correlates well with the disk brightening and reddening both in the 2010 and earlier observations. Thus, the inference from this study is that much (perhaps all?) of the X-ray emission from this source originates behind matter ejected by gamma Cas into our line of sight.
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Submitted 30 January, 2012;
originally announced January 2012.
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Cyclic variability of the circumstellar disk of the Be star zetaTau - I. Long-term monitoring observations
Authors:
S. Stefl,
Th. Rivinius,
A. C. Carciofi,
J. B. LeBouquin,
D. Baade,
K. S. Bjorkman,
E. Hesselbach,
C. A. Hummel,
A. T. Okazaki,
E. Pollmann,
F. Rantakyrö,
J. P. Wisniewski
Abstract:
Emission lines formed in decretion disks of Be stars often undergo long-term cyclic variations, especially in the violet-to-red (V/R) ratio of their primary components. From observations of the bright Be-shell star zeta Tau, the possibly broadest and longest data set illustrating the prototype of this behaviour was compiled from our own and archival observations. It comprises optical and infrare…
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Emission lines formed in decretion disks of Be stars often undergo long-term cyclic variations, especially in the violet-to-red (V/R) ratio of their primary components. From observations of the bright Be-shell star zeta Tau, the possibly broadest and longest data set illustrating the prototype of this behaviour was compiled from our own and archival observations. It comprises optical and infrared spectra, broad-band polarimetry, and interferometric observations. From 3 V/R cycles between 1997 and 2008, a mean cycle length in H alpha of 1400-1430 days was derived. After each minimum in V/R, the shell absorption weakens and splits into two components, leading to 3 emission peaks. This phase makes the strongest contribution to the variability in cycle length. V/R curves of different lines are shifted in phase. Lines formed on average closer to the central star are ahead of the others. The shell absorption lines fall into 2 categories differing in line width, ionization/excitation potential, and variability of the equivalent width. The interferometry has resolved the continuum and the line emission in Br gamma and He I 2.06. The phasing of the Br gamma emission shows that the photocenter of the line-emitting region lies within the plane of the disk but is offset from the continuum source. The plane of the disk is constant throughout the observed V/R cycles. The self-consistent, one-armed, disk-oscillation model is developed in Paper II.
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Submitted 13 July, 2009;
originally announced July 2009.
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H-alpha observations of zeta Tauri
Authors:
E. Pollmann,
Th. Rivinius
Abstract:
We report H-alpha observations of zeta Tauri, taken between late 2000 and early 2006. Next to extending existing long-term montioring of the disk state of this star we report an intermediate timescale of about 69 days to be present in the V/R variations of the Halpha line. The observational data will be published together with this manuscript.
We report H-alpha observations of zeta Tauri, taken between late 2000 and early 2006. Next to extending existing long-term montioring of the disk state of this star we report an intermediate timescale of about 69 days to be present in the V/R variations of the Halpha line. The observational data will be published together with this manuscript.
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Submitted 29 January, 2008;
originally announced January 2008.
