Synthesis of Membrane-Electrode Assembly for Fuel Cells by Means of (Sub)-Atmospheric Plasma Processes
Authors:
Delphine Merche,
Thierry Dufour,
Julie Hubert,
Claude Poleunis,
Sami Yunus,
Arnaud Delcorte,
Patrick Bertrand,
Francois Reniers
Abstract:
An easy procedure to build up membrane-electrode assemblies for applications dedicated to miniaturized PEMFC using H2 or CH3OH by a two-steps atmospheric plasma process is reported. Firstly, catalyst nanoparticles are grafted on carbon substrates by spraying a Pt colloidal solution in the post-discharge of an RF atmospheric plasma torch. In the second step, the resulting decorated electrodes are c…
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An easy procedure to build up membrane-electrode assemblies for applications dedicated to miniaturized PEMFC using H2 or CH3OH by a two-steps atmospheric plasma process is reported. Firstly, catalyst nanoparticles are grafted on carbon substrates by spraying a Pt colloidal solution in the post-discharge of an RF atmospheric plasma torch. In the second step, the resulting decorated electrodes are covered by plasma synthesized polymeric membranes in the discharge of a DBD. The sulfonated polystyrene membranes are synthesized by injecting simultaneously styrene and trifluoromethanesulfonic acid monomers, in the presence of a carrier gas (Ar or He). The membranes are chemically characterized by XPS, ToF-SIMS, and FTIR (IRRAS) and their deposition rate is investigated by SEM.
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Submitted 6 February, 2018;
originally announced February 2018.
Very low effective Schottky barrier height for erbium disilicide contacts on n-Si through arsenic segregation
Authors:
Nicolas Reckinger,
Claude Poleunis,
Emmanuel Dubois,
Constantin Augustin Dutu,
Xiaohui Tang,
Arnaud Delcorte,
Jean-Pierre Raskin
Abstract:
The segregation of As+ ions implanted into thin Er films deposited on n-Si substrates is studied after ErSi2-x formation. The same lowering of the effective Schottky barrier height (SBH) below 0.12 eV is obtained at moderate annealing temperatures, regardless of the redistribution of As dopants at the ErSi2-x/Si interface. On the other hand, if the implanted dose is slightly enhanced, the annealin…
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The segregation of As+ ions implanted into thin Er films deposited on n-Si substrates is studied after ErSi2-x formation. The same lowering of the effective Schottky barrier height (SBH) below 0.12 eV is obtained at moderate annealing temperatures, regardless of the redistribution of As dopants at the ErSi2-x/Si interface. On the other hand, if the implanted dose is slightly enhanced, the annealing temperature required to reach sub-0.12-eV effective SBH can be further reduced. This process enables the formation of very low effective SBH ErSi2-x/n-Si contacts with a low thermal budget.
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Submitted 25 October, 2011;
originally announced October 2011.
