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Magnetic proximity effect induced FMR frequency enhancement in {Py/FeMn} bilayers
Authors:
Dmytro M. Polishchuk,
Taras I. Polek,
Vladyslav Yu. Borynskyi,
Anatolii F. Kravets,
Alexandr I. Tovstolytkin,
Vladislav Korenivski
Abstract:
Ferromagnetic resonance (FMR) in exchange-coupled ferromagnet-antiferromagnet (FM/AFM) bilayers commonly shows a moderate increase in the resonance frequency owing to the induced unidirectional anisotropy. Here we report a large FMR frequency enhancement toward the sub-THz range observed in Py/FeMn with ultrathin AFM FeMn. The effect is connected with a sizable induced magnetic moment in FeMn caus…
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Ferromagnetic resonance (FMR) in exchange-coupled ferromagnet-antiferromagnet (FM/AFM) bilayers commonly shows a moderate increase in the resonance frequency owing to the induced unidirectional anisotropy. Here we report a large FMR frequency enhancement toward the sub-THz range observed in Py/FeMn with ultrathin AFM FeMn. The effect is connected with a sizable induced magnetic moment in FeMn caused by the magnetic proximity effect from the Py layer. The observed FMR properties are explained as due to the competing intrinsic antiferromagnetic order and the ferromagnetic proximity effect in nanometer thin FeMn. Our results show that combining materials with strong and weak anti/ferromagnetic ordering can potentially close the notoriously difficult GHz-THz gap important for high-speed spintronic applications.
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Submitted 27 September, 2020; v1 submitted 27 June, 2019;
originally announced June 2019.
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Angle resolved relaxation of spin currents by antiferromagnets in spin valves
Authors:
Dmytro M. Polishchuk,
Akashdeep Kamra,
Taras I. Polek,
Arne Brataas,
Vladislav Korenivski
Abstract:
We observe and analyze tunable relaxation of a pure spin current by an antiferromagnet in spin-valves. This is achieved by carefully controlling the angle between a resonantly excited ferromagnetic layer pum** the spin current and the Néel vector of the antiferromagnetic layer. The effect is observed as an angle-dependent spin-pum** contribution to the ferromagnetic resonance linewidth. An int…
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We observe and analyze tunable relaxation of a pure spin current by an antiferromagnet in spin-valves. This is achieved by carefully controlling the angle between a resonantly excited ferromagnetic layer pum** the spin current and the Néel vector of the antiferromagnetic layer. The effect is observed as an angle-dependent spin-pum** contribution to the ferromagnetic resonance linewidth. An interplay between spin-mixing conductance and, often disregarded, longitudinal spin conductance is found to underlie our observations, which is in agreement with a recent prediction for related ferromagnetic spin valves.
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Submitted 13 June, 2019; v1 submitted 7 June, 2019;
originally announced June 2019.
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Spin-dependent scattering and magnetic proximity effect in Ni-doped Co/Cu multilayers as a probe of atomic magnetism
Authors:
Yu O Tykhonenko-Polishchuk,
D M Polishchuk,
T I Polek,
D D Yaremkevych,
A F Kravets,
A I Tovstolytkin,
A N Timoshevskii,
V Korenivski
Abstract:
We investigate the spin transport and ferromagnetic resonance properties of giant magnetoresistive (GMR) Co/Cu-Ni multilayers with variable levels of Ni do** in the Cu spacer. We present an experimental evidence for a magnetic-to-diamagnetic transition in the atomic magnetic moment of Ni in the Cu matrix for concentrations below 15 at. % Ni. As its concentration is increased, Ni atoms turn into…
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We investigate the spin transport and ferromagnetic resonance properties of giant magnetoresistive (GMR) Co/Cu-Ni multilayers with variable levels of Ni do** in the Cu spacer. We present an experimental evidence for a magnetic-to-diamagnetic transition in the atomic magnetic moment of Ni in the Cu matrix for concentrations below 15 at. % Ni. As its concentration is increased, Ni atoms turn into spin scattering centers, which is manifested experimentally as a step-like change in the GMR of the multilayers. This behavior is observed in multilayers with gradient-doped Cu spacers, where only the inner region was doped with Ni. In the uniformly doped spacers the GMR decreases monotonously with increasing Ni content, indicating that Ni atoms are magnetic and act as spin relaxation centers in the entire dopant-concentration range studied. We explain the difference in the observed GMR behavior as due to a strong magnetic proximity effect in the uniform spacers, which is efficiently suppressed in the gradient spacers. The observed magnetic phase transition is fully supported by our detailed ab-initio calculations, taking into consideration structural relaxation in the system as well as potential Ni clustering. Controlling the loss or gain of the atomic magnetism for a specific dopant can be a tool in probing and controlling spin relaxation in materials and devices for spin-valve and spin-torque based applications.
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Submitted 19 August, 2018;
originally announced August 2018.
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Spin relaxation in multilayers with synthetic ferrimagnets
Authors:
Dmytro M. Polishchuk,
Taras I. Polek,
Akashdeep Kamra,
Anatolii F. Kravets,
Alexandr I. Tovstolytkin,
Arne Brataas,
Vladislav Korenivski
Abstract:
We demonstrate a strong tunability of the spin-pum** contribution to magnetic dam** in a thin-film ferromagnetic free layer interfaced with a synthetic ferrimagnet (SFM), acting as a spin-sink, via a thin Cu-spacer. The effect strongly depends on the magnetic state of the SFM, a trilayer structure composed of two Fe layers coupled via indirect exchange mediated by a Cr spacer. With increasing…
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We demonstrate a strong tunability of the spin-pum** contribution to magnetic dam** in a thin-film ferromagnetic free layer interfaced with a synthetic ferrimagnet (SFM), acting as a spin-sink, via a thin Cu-spacer. The effect strongly depends on the magnetic state of the SFM, a trilayer structure composed of two Fe layers coupled via indirect exchange mediated by a Cr spacer. With increasing Cr thickness, the SFM state undergoes a transition from an antiparallel via a non-collinear to a parallel configuration. We can explain the corresponding non-monotonous dependence of spin relaxation in the free layer in terms of a modulation of the longitudinal spin transport as well as relaxation of the transverse angular momentum in the SFM. The results should be useful for designing high-speed spintronic devices where tunability of spin relaxation is advantageous.
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Submitted 29 June, 2018; v1 submitted 28 June, 2018;
originally announced June 2018.
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Effect of nanostructure layout on spin pum** phenomena in antiferromagnet/ nonmagnetic metal/ ferromagnet multilayered stacks
Authors:
A. F. Kravets,
Olena V. Gomonay,
D. M. Polishchuk,
Yu. O. Tykhonenko-Polishchuk,
T. I. Polek,
A. I. Tovstolytkin,
V. Korenivski
Abstract:
In this work we focus on magnetic relaxation in Mn$_{80}$Ir$_{20}$(12 nm)/ Cu(6 nm)/ Py($d_\mathrm{F}$) antiferromagnet/Cu/ferromagnet (AFM/Cu/FM) multilayers with different thickness of the ferromagnetic permalloy layer. An effective FM-AFM interaction mediated via the conduction electrons in the nonmagnetic Cu spacer -- the spin-pum** effect -- is detected as an increase in the linewidth of th…
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In this work we focus on magnetic relaxation in Mn$_{80}$Ir$_{20}$(12 nm)/ Cu(6 nm)/ Py($d_\mathrm{F}$) antiferromagnet/Cu/ferromagnet (AFM/Cu/FM) multilayers with different thickness of the ferromagnetic permalloy layer. An effective FM-AFM interaction mediated via the conduction electrons in the nonmagnetic Cu spacer -- the spin-pum** effect -- is detected as an increase in the linewidth of the ferromagnetic resonance (FMR) spectra and a shift of the resonant magnetic field. We further find experimentally that the spin-pum**-induced contribution to the linewidth is inversely proportional to the thickness of the Py layer. We show that this thickness dependence likely originates from the dissipative dynamics of the free and localized spins in the AFM layer. The results obtained could be used for tailoring the dissipative properties of spintronic devices incorporating antiferromagnetic layers.
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Submitted 9 November, 2016;
originally announced November 2016.
