Showing 1–22 of 22 results for author: Polak, M

Ultra-fast Oxygen Conduction in Sillén Oxychlorides

Authors: Jun Meng, Md Sariful Sheikh, Lane E. Schultz, William O. Nachlas, Jian Liu, Maciej P. Polak, Ryan Jacobs, Dane Morgan

Abstract: Oxygen ion conductors are crucial for enhancing the efficiency of various clean energy technologies, including fuel cells, batteries, electrolyzers, membranes, sensors, and more. In this study, LaBi2O4Cl is identified as an ultra-fast oxygen conductor from the MBi2O4X (M=rare-earth element, X=halogen element) family, discovered by a structure-similarity analysis of >60k oxygen-containing compounds… ▽ More Oxygen ion conductors are crucial for enhancing the efficiency of various clean energy technologies, including fuel cells, batteries, electrolyzers, membranes, sensors, and more. In this study, LaBi2O4Cl is identified as an ultra-fast oxygen conductor from the MBi2O4X (M=rare-earth element, X=halogen element) family, discovered by a structure-similarity analysis of >60k oxygen-containing compounds. Ab initio studies reveal that LaBi2O4Cl has an ultra-low migration barrier of 0.1 eV for oxygen vacancy, significantly lower than 0.6-0.8 eV for interstitial oxygen. Frenkel pairs are the dominant defects in intrinsic LaBi2O4Cl, facilitating notable oxygen diffusion primarily through vacancies at higher temperatures. LaBi2O4Cl with extrinsic oxygen vacancies (2.8%) exhibits a conductivity of 0.3 S/cm at 25°C, maintains a 0.1 eV diffusion barrier up to 1100°C, and transitions from extrinsic to mixed extrinsic and intrinsic behavior as the Frenkel pair concentration increases at higher temperatures. Experimental results on synthesized LaBi2O4Cl and Sr-doped LaBi2O4Cl demonstrate comparable or higher oxygen conductivity than YSZ and LSGM below 400 °C, with lower activation energies. Further experimental optimization of LaBi2O4Cl, including aliovalent do** and microstructure refinement, could significantly enhance its performance and efficiency, facilitating fast oxygen conduction approaching room temperature. △ Less

Submitted 11 June, 2024; originally announced June 2024.

Electronic and structural properties of group IV materials and their polytypes

Authors: Jakub Ziembicki, Paweł Scharoch, Maciej P. Polak, Michał Wiśniewski, Robert Kudrawiec

Abstract: Nanotechnology's impact on semiconductor industry advancement, particularly through the engineering of nanostructures like nanowires, opens new possibilities for material functionality due to the tunable physical properties of nanostructures compared to bulk materials. This paper presents a comprehensive study on group IV semiconductors and their binaries across four polytypes: 2H, 3C, 4H, and 6H,… ▽ More Nanotechnology's impact on semiconductor industry advancement, particularly through the engineering of nanostructures like nanowires, opens new possibilities for material functionality due to the tunable physical properties of nanostructures compared to bulk materials. This paper presents a comprehensive study on group IV semiconductors and their binaries across four polytypes: 2H, 3C, 4H, and 6H, focusing on their optoelectronic application potential. Deep understanding of these polytypes is particularly relevant for nanowire-based technologies. Through first principles modeling, we examine the structural and electronic properties of these materials, emphasizing their band structure, stability, and the feasibility for light-emitting applications. We use a generalized Ising model to discuss materials stability and tendency for polytypism. We also determine relative band edge positions and employ a six $k\cdot p$ model for a detailed understanding of the materials' electronic properties. Due to the comprehensive nature of this study, we provide insight on the chemical trends present in all of the studied properties. Our theoretical predictions align well with existing experimental data, suggesting new avenues for nanostructure-based device development. The discussion extends to the implications of these findings for the fabrication of optoelectronic devices with the studied IV-IV materials, highlighting the challenges and opportunities for future research in nanowire synthesis and their application. △ Less

Submitted 8 April, 2024; originally announced April 2024.

Material gain and eight-band k.p description for selected perovskites

Authors: Krzysztof Gawarecki, Michał Wiśniewski, Maciej Polak, Robert Kudrawiec, Marta Gładysiewicz

Abstract: In this work, we present a ready-to-use symmetry invariant expansion form of the eight-band k.p Hamiltonian for inorganic and organic metal halide perovskites (CsPbX$_3$ and MAPbX$_3$ with $X = \{$Cl, Br, I$\}$). We use the k.p model to calculate the electronic band structures for perovskite materials of cubic and pseudo-cubic phase. In order to find respective parameters, the band structures of c… ▽ More In this work, we present a ready-to-use symmetry invariant expansion form of the eight-band k.p Hamiltonian for inorganic and organic metal halide perovskites (CsPbX$_3$ and MAPbX$_3$ with $X = \{$Cl, Br, I$\}$). We use the k.p model to calculate the electronic band structures for perovskite materials of cubic and pseudo-cubic phase. In order to find respective parameters, the band structures of considered materials were obtained within state-of-the-art density functional theory and used next as targets to adjust the k.p bands and determine the values of k.p parameters. The calculated band structures were used to obtain the material gain for bulk crystals (CsPbCl$_3$, CsPbBr$_3$, CsPbI$_3$, MAPbCl$_3$, MAPbBr$_3$ and MAPbI$_3$) which is compared with the material gain in well-established III-V semiconductors. It was found that for these perovskites a positive material gain appears at lower carrier density than for the reference materials (GaAs and InP). We demonstrate that from the point of view of the electronic band structure, the studied perovskites are very promising gain medium for lasers. △ Less

Submitted 12 June, 2024; v1 submitted 14 June, 2023; originally announced June 2023.

Extracting Accurate Materials Data from Research Papers with Conversational Language Models and Prompt Engineering

Authors: Maciej P. Polak, Dane Morgan

Abstract: There has been a growing effort to replace manual extraction of data from research papers with automated data extraction based on natural language processing, language models, and recently, large language models (LLMs). Although these methods enable efficient extraction of data from large sets of research papers, they require a significant amount of up-front effort, expertise, and coding. In this… ▽ More There has been a growing effort to replace manual extraction of data from research papers with automated data extraction based on natural language processing, language models, and recently, large language models (LLMs). Although these methods enable efficient extraction of data from large sets of research papers, they require a significant amount of up-front effort, expertise, and coding. In this work we propose the ChatExtract method that can fully automate very accurate data extraction with minimal initial effort and background, using an advanced conversational LLM. ChatExtract consists of a set of engineered prompts applied to a conversational LLM that both identify sentences with data, extract that data, and assure the data's correctness through a series of follow-up questions. These follow-up questions largely overcome known issues with LLMs providing factually inaccurate responses. ChatExtract can be applied with any conversational LLMs and yields very high quality data extraction. In tests on materials data we find precision and recall both close to 90% from the best conversational LLMs, like ChatGPT-4. We demonstrate that the exceptional performance is enabled by the information retention in a conversational model combined with purposeful redundancy and introducing uncertainty through follow-up prompts. These results suggest that approaches similar to ChatExtract, due to their simplicity, transferability, and accuracy are likely to become powerful tools for data extraction in the near future. Finally, databases for critical cooling rates of metallic glasses and yield strengths of high entropy alloys are developed using ChatExtract. △ Less

Submitted 21 February, 2024; v1 submitted 7 March, 2023; originally announced March 2023.

Comments: 7 pages, 3 figures, 1 table

Journal ref: Nature Communications (2024) 15:1569

Flexible, Model-Agnostic Method for Materials Data Extraction from Text Using General Purpose Language Models

Authors: Maciej P. Polak, Shrey Modi, Anna Latosinska, **ming Zhang, Ching-Wen Wang, Shaonan Wang, Ayan Deep Hazra, Dane Morgan

Abstract: Accurate and comprehensive material databases extracted from research papers are crucial for materials science and engineering, but their development requires significant human effort. With large language models (LLMs) transforming the way humans interact with text, LLMs provide an opportunity to revolutionize data extraction. In this study, we demonstrate a simple and efficient method for extract… ▽ More Accurate and comprehensive material databases extracted from research papers are crucial for materials science and engineering, but their development requires significant human effort. With large language models (LLMs) transforming the way humans interact with text, LLMs provide an opportunity to revolutionize data extraction. In this study, we demonstrate a simple and efficient method for extracting materials data from full-text research papers leveraging the capabilities of LLMs combined with human supervision. This approach is particularly suitable for mid-sized databases and requires minimal to no coding or prior knowledge about the extracted property. It offers high recall and nearly perfect precision in the resulting database. The method is easily adaptable to new and superior language models, ensuring continued utility. We show this by evaluating and comparing its performance on GPT-3 and GPT-3.5/4 (which underlie ChatGPT), as well as free alternatives such as BART and DeBERTaV3. We provide a detailed analysis of the method's performance in extracting sentences containing bulk modulus data, achieving up to 90% precision at 96% recall, depending on the amount of human effort involved. We further demonstrate the method's broader effectiveness by develo** a database of critical cooling rates for metallic glasses over twice the size of previous human curated databases. △ Less

Submitted 12 June, 2024; v1 submitted 9 February, 2023; originally announced February 2023.

Comments: 13 pages, 4 figures

Journal ref: Digital Discovery, 2024, 3, 1221-1235

The number of abundant elements in union-closed families without small sets

Authors: Adam Kabela, Michal Polák, Jakub Teska

Abstract: We let $\mathcal{F}$ be a finite family of sets closed under taking unions and $\emptyset \not \in \mathcal{F}$, and call an element abundant if it belongs to more than half of the sets of $\mathcal{F}$. In this notation, the classical Frankl's conjecture (1979) asserts that $\mathcal{F}$ has an abundant element. As possible strengthenings, Poonen (1992) conjectured that if $\mathcal{F}$ has preci… ▽ More We let $\mathcal{F}$ be a finite family of sets closed under taking unions and $\emptyset \not \in \mathcal{F}$, and call an element abundant if it belongs to more than half of the sets of $\mathcal{F}$. In this notation, the classical Frankl's conjecture (1979) asserts that $\mathcal{F}$ has an abundant element. As possible strengthenings, Poonen (1992) conjectured that if $\mathcal{F}$ has precisely one abundant element, then this element belongs to each set of $\mathcal{F}$, and Cui and Hu (2019) investigated whether $\mathcal{F}$ has at least $k$ abundant elements if a smallest set of $\mathcal{F}$ is of size at least $k$. Cui and Hu conjectured that this holds for $k = 2$ and asked whether this also holds for the cases $k = 3$ and $k > \frac{n}{2}$ where $n$ is the size of the largest set of $\mathcal{F}$. We show that $\mathcal{F}$ has at least $k$ abundant elements if $k \geq n - 3$, and that $\mathcal{F}$ has at least $k - 1$ abundant elements if $k = n - 4$, and we construct a union-closed family with precisely $k - 1$ abundant elements for every $k$ and $n$ satisfying $n - 4 \geq k \geq 3$ and $n \geq 9$ (and for $k = 3$ and $n = 8$). We also note that $\mathcal{F}$ always has at least $\min \{ n, 2k - n + 1 \}$ abundant elements. On the other hand, we construct a union-closed family with precisely two abundant elements for every $k$ and $n$ satisfying $n \geq \max \{ 3, 5k-4 \}$. Lastly, we show that Cui and Hu's conjecture for $k = 2$ stands between Frankl's conjecture and Poonen's conjecture. △ Less

Submitted 30 May, 2023; v1 submitted 19 December, 2022; originally announced December 2022.

The effect of isovalent do** on the electronic band structure of group IV semiconductors

Authors: Maciej P Polak, Paweł Scharoch, Robert Kudrawiec

Abstract: The band gap engineering of group IV semiconductors has not been well explored theoretically and experimentally, except for SiGe. Recently, GeSn has attracted much attention due to the possibility of obtaining a direct band gap in this alloy, thereby making it suitable for light emitters. Other group IV alloys may also potentially exhibit material properties useful for device applications, expandi… ▽ More The band gap engineering of group IV semiconductors has not been well explored theoretically and experimentally, except for SiGe. Recently, GeSn has attracted much attention due to the possibility of obtaining a direct band gap in this alloy, thereby making it suitable for light emitters. Other group IV alloys may also potentially exhibit material properties useful for device applications, expanding the space for band gap engineering in group IV. In this work the electronic band structure of all group IV semiconductor alloys is investigated. Twelve possible A:B alloys, where A is a semiconducting host (A = C, Si, and Ge) and B is an isovalent dopant (B = C, Si, Ge, Sn, and Pb), were studied in the dilute regime (0.8%) of the isovalent dopant in the entire Brillouin zone (BZ), and the chemical trends in the evolution of their electronic band structure were carefully analyzed. Density functional theory with state-of-the-art methods such as meta-GGA functionals and a spectral weight approach to band unfolding from large supercells was used to obtain dopant-related changes in the band structure, in particular the direct band gap at the Γ point and indirect band gaps at the L(X) points of the BZ. Analysis of contributions from geometry distortion and electronic interaction was also performed. Moreover, the obtained results are discussed in the context of obtaining a direct fundamental gap in Ge:B (B = C, Sn, and Pb) alloys, and intermediate band formation in C:B (B = Sn and Pb) and Ge:C. An increase in localization effects is also observed: a strong hole localization for alloys diluted with a dopant of a larger covalent radius and a strong electron localization for alloys with a dopant of smaller radius. Finally, it is shown that alloying Si and Ge with other elements from group IV is a promising way to enhance the functionality of group IV semiconductors. △ Less

Submitted 19 March, 2022; originally announced March 2022.

Journal ref: J. Phys. D: Appl. Phys. 54 085102 (2021)

Machine learning for impurity charge-state transition levels in semiconductors from elemental properties using multi-fidelity datasets

Authors: Maciej P. Polak, Ryan Jacobs, Arun Mannodi-Kanakkithodi, Maria K. Y. Chan, Dane Morgan

Abstract: Quantifying charge-state transition energy levels of impurities in semiconductors is critical to understanding and engineering their optoelectronic properties for applications ranging from solar photovoltaics to infrared lasers. While these transition levels can be measured and calculated accurately, such efforts are time-consuming and more rapid prediction methods would be beneficial. Here, we si… ▽ More Quantifying charge-state transition energy levels of impurities in semiconductors is critical to understanding and engineering their optoelectronic properties for applications ranging from solar photovoltaics to infrared lasers. While these transition levels can be measured and calculated accurately, such efforts are time-consuming and more rapid prediction methods would be beneficial. Here, we significantly reduce the time typically required to predict impurity transition levels using multi-fidelity datasets and a machine learning approach employing features based on elemental properties and impurity positions. We use transition levels obtained from low-fidelity (i.e., local-density approximation or generalized gradient approximation) density functional theory (DFT) calculations, corrected using a recently proposed modified band alignment scheme, which well-approximates transition levels from high-fidelity DFT (i.e., hybrid HSE06). The model fit to the large multi-fidelity database shows improved accuracy compared to the models trained on the more limited high-fidelity values. Crucially, in our approach, when using the multi-fidelity data, high-fidelity values are not required for model training, significantly reducing the computational cost required for training the model. Our machine learning model of transition levels has a root mean squared (mean absolute) error of 0.36 (0.27) eV vs high-fidelity hybrid functional values when averaged over 14 semiconductor systems from the II-VI and III-V families. As a guide for use on other systems, we assessed the model on simulated data to show the expected accuracy level as a function of bandgap for new materials of interest. Finally, we use the model to predict a complete space of impurity charge-state transition levels in all zinc blende III-V and II-VI systems. △ Less

Submitted 19 March, 2022; originally announced March 2022.

Journal ref: J. Chem. Phys. 156, 114110 (2022)

Modified Band Alignment Method to Obtain Hybrid Functional Accuracy from Standard DFT: Application to Defects in Highly Mismatched III-V:Bi Alloys

Authors: Maciej P. Polak, Robert Kudrawiec, Ryan Jacobs, Izabela Szlufarska, Dane Morgan

Abstract: This paper provides an accurate theoretical defect energy database for pure and Bi-containing III-V (III-V:Bi) materials and investigates efficient methods for high-throughput defect calculations based on corrections of results obtained with local and semi-local functionals. Point defects as well as nearest-neighbor and second-nearest-neighbor pair defects were investigated in charge states rangin… ▽ More This paper provides an accurate theoretical defect energy database for pure and Bi-containing III-V (III-V:Bi) materials and investigates efficient methods for high-throughput defect calculations based on corrections of results obtained with local and semi-local functionals. Point defects as well as nearest-neighbor and second-nearest-neighbor pair defects were investigated in charge states ranging from -5 to 5. Ga-V:Bi systems (GaP:Bi, GaAs:Bi, and GaSb:Bi) were thoroughly investigated with significantly slower, higher fidelity hybrid Heyd-Scuseria-Ernzerhof (HSE) and significantly faster, lower fidelity local density approximation (LDA) calculations. In both approaches spurious electrostatic interactions were corrected with the Freysoldt correction. The results were verified against available experimental results and used to assess the accuracy of a previous band alignment correction. Here, a modified band alignment method is proposed in order to better predict the HSE values from the LDA ones. The proposed method allows prediction of defect energies with values that approximate those from the HSE functional at the computational cost of LDA (about 20x faster for the systems studied here). Tests of selected point defects in In-V:Bi materials resulted in corrected LDA values having a mean absolute error (MAE)=0.175 eV for defect levels vs. HSE. The method was further verified on an external database of defects and impurities in CdX (X=S, Se, Te) systems, yielding a MAE=0.194 eV. These tests demonstrate the correction to be sufficient for qualitative and semi-quantitative predictions, and may suggest transferability to many semiconductor systems without significant loss in accuracy. Properties of the remaining In-V:Bi defects and all Al-V:Bi defects were predicted with the use of the modified band alignment method. △ Less

Submitted 6 December, 2021; originally announced December 2021.

Journal ref: Phys. Rev. Materials 5 (2021) 124601

MAST-SEY: MAterial Simulation Toolkit for Secondary Electron Yield. A monte carlo approach to secondary electron emission based on complex dielectric functions

Authors: Maciej P. Polak, Dane Morgan

Abstract: MAST-SEY is an open-source Monte Carlo code capable of calculating secondary electron emission using input data generated entirely from first principle (density functional theory) calculations. It utilizes the complex dielectric function and Penn's theory for inelastic scattering processes, and relativistic Schrödinger theory by means of a partial-wave expansion method to govern elastic scattering… ▽ More MAST-SEY is an open-source Monte Carlo code capable of calculating secondary electron emission using input data generated entirely from first principle (density functional theory) calculations. It utilizes the complex dielectric function and Penn's theory for inelastic scattering processes, and relativistic Schrödinger theory by means of a partial-wave expansion method to govern elastic scattering. It allows the user to include explicitly calculated momentum dependence of the dielectric function, as well as to utilize first-principle density of states in secondary electron generation, which provides a more complete description of the underlying physics. In this paper we thoroughly describe the theoretical aspects of the modeling, as used in the code, and present sample results obtained for copper and aluminum. △ Less

Submitted 26 August, 2021; originally announced August 2021.

Journal ref: Computational Materials Science, Volume 193, 1 June 2021, 110281

Modeling nanoconfined reaction kinetics: Alternative methodology incorporating equilibrium extent fluctuations

Authors: Leonid Rubinovich, Micha Polak

Abstract: This study reveals that Equilibrium Constant Differential Equations (ECDE) for nanoconfined reactions derived recently in the frameworks of statistical mechanics are useful in modeling stochastic chemical kinetics. It is assumed and verified that if the transient value of the nano-reaction quotient is treated as being an equilibrium constant, the corresponding equilibrium reaction extent and its f… ▽ More This study reveals that Equilibrium Constant Differential Equations (ECDE) for nanoconfined reactions derived recently in the frameworks of statistical mechanics are useful in modeling stochastic chemical kinetics. It is assumed and verified that if the transient value of the nano-reaction quotient is treated as being an equilibrium constant, the corresponding equilibrium reaction extent and its fluctuations (the variance function) coincide with the respective transient values. The ECDE-computed variance function facilitates the solution of the stochastic kinetics equations (SKE), as is demonstrated for a stoichiometric exchange reaction. The results obtained by this original methodology are in full agreement with those provided by the chemical master equations. Contrary to the commonly used approaches based on the latter and the Gillespie algorithm, which need a lot of computer memory and are time-consuming, the proposed SKE-ECDE method requires to solve only the ECDE and a single stochastic kinetics differential equation. △ Less

Submitted 12 July, 2020; originally announced July 2020.

Chemical Reactions under Nanoconfinement: Unravelling Equilibrium Constant Equations

Authors: Leonid Rubinovich, Micha Polak

Abstract: Equilibrium Constant Differential Equations (ECDE) are derived for several nanoconfined elemental bimolecular reactions in the frameworks of statistical mechanics and the ideal gas model. The ECDEs complement the well-known equilibrium-constant ordinary equations that are used for macroscopic systems. Solving the ECDE numerically or analytically furnishes the average reaction extent, as well as it… ▽ More Equilibrium Constant Differential Equations (ECDE) are derived for several nanoconfined elemental bimolecular reactions in the frameworks of statistical mechanics and the ideal gas model. The ECDEs complement the well-known equilibrium-constant ordinary equations that are used for macroscopic systems. Solving the ECDE numerically or analytically furnishes the average reaction extent, as well as its variance and skewness. This original theoretical-computational methodology fills the gap in studies of nanochemical equilibrium providing a consistent and convenient alternative to derivations based on direct employment of the canonical partition-functions. Whereas the latter become more complex and time-consuming with increased number of molecules, the ECDE-based computations are equally efficient for small as well as large numbers of nanoconfined reacting molecules. The ECDE methodology introduced here is confirmed by a complete agreement with partition-function computations. In addition, the new approach is applied to nanoconfined adsorption. △ Less

Submitted 14 July, 2020; v1 submitted 1 April, 2020; originally announced April 2020.

Electronic band structure of nitrogen diluted Ga(PAsN): Formation of the intermediate band, direct and indirect optical transitions, localization of states

Authors: Maciej P. Polak, Robert Kudrawiec, Oleg Rubel

Abstract: The electronic band structure of Ga(PAsN) with a few percent of nitrogen is calculated in the whole composition of Ga(PAs) host using the state-of-the-art density functional methods including the modified Becke-Johnson functional to correctly reproduce the band gap, and band unfolding to reveal the character of the bands within the entire Brillouin zone. As expected, relatively small amounts of ni… ▽ More The electronic band structure of Ga(PAsN) with a few percent of nitrogen is calculated in the whole composition of Ga(PAs) host using the state-of-the-art density functional methods including the modified Becke-Johnson functional to correctly reproduce the band gap, and band unfolding to reveal the character of the bands within the entire Brillouin zone. As expected, relatively small amounts of nitrogen introduced to Ga(PAs) lead to formation of an intermediate band below the conduction band which is consistent with the band anticrossing model, widely used to describe the electronic band structure of dilute nitrides. However, in this study calculations are performed in the whole Brillouin zone and reveal the significance of correct description of the band structure near the edges of Brillouin zone, especially for indirect band gap P-rich host alloy, which may not be properly captured with simpler models. The theoretical results are compared with experimental studies, confirming their reliability. The influence of nitrogen on the band structure is discussed in terms of application of Ga(PAsN) in optoelectronic devices such as intermediate band solar cells and light emitters. It is found that Ga(PAsN) with low N and As concentration has a band structure suitable for integration in Si tandem solar cells, since the lattice mismatch between Si and Ga(PAsN) is small in this case. Moreover, it is concluded that P-rich Ga(PAsN) alloys with low N concentration have a promising band structure for two colour emitters. Additionally, the effect of nitrogen incorporation on the carrier localization is studied and discussed. △ Less

Submitted 30 March, 2019; originally announced April 2019.

Journal ref: Journal of Applied Physics 126, 175701 (2019)

Keyed hash function from large girth expander graphs

Authors: Eustrat Zhupa, Monika K. Polak

Abstract: In this paper we present an algorithm to compute keyed hash function (message authentication code MAC). Our approach uses a family of expander graphs of large girth denoted $D(n,q)$, where $n$ is a natural number bigger than one and $q$ is a prime power. Expander graphs are known to have excellent expansion properties and thus they also have very good mixing properties. All requirements for a good… ▽ More In this paper we present an algorithm to compute keyed hash function (message authentication code MAC). Our approach uses a family of expander graphs of large girth denoted $D(n,q)$, where $n$ is a natural number bigger than one and $q$ is a prime power. Expander graphs are known to have excellent expansion properties and thus they also have very good mixing properties. All requirements for a good MAC are satisfied in our method and a discussion about collisions and preimage resistance is also part of this work. The outputs closely approximate the uniform distribution and the results we get are indistinguishable from random sequences of bits. Exact formulas for timing are given in term of number of operations per bit of input. Based on the tests, our method for implementing DMAC shows good efficiency in comparison to other techniques. 4 operations per bit of input can be achieved. The algorithm is very flexible and it works with messages of any length. Many existing algorithms output a fixed length tag, while our constructions allow generation of an arbitrary length output, which is a big advantage. △ Less

Submitted 14 March, 2019; originally announced March 2019.

Strain and Band-Gap Engineering in Ge-Sn Alloys via P Do**

Authors: Slawomir Prucnal, Yonder Berencén, Mao Wang, Jörg Grenzer, Matthias Voelskow, Rene Hübner, Yuji Yamamoto, Alexander Scheit, Florian Bärwolf, Vitaly Zviagin, Rüdiger Schmidt-Grund, Marius Grundmann, Jerzy Żuk, Marcin Turek, Andrzej Droździel, Krzysztof Pyszniak, Robert Kudrawiec, Maciej P. Polak, Lars Rebohle, Wolfgang Skorupa, Manfred Helm, Shengqiang Zhou

Abstract: Ge with a quasi-direct band gap can be realized by strain engineering, alloying with Sn, or ultrahigh n-type do**. In this work, we use all three approaches together to fabricate direct-band-gap Ge-Sn alloys. The heavily doped n-type Ge-Sn is realized with CMOS-compatible nonequilibrium material processing. P is used to form highly doped n-type Ge-Sn layers and to modify the lattice parameter of… ▽ More Ge with a quasi-direct band gap can be realized by strain engineering, alloying with Sn, or ultrahigh n-type do**. In this work, we use all three approaches together to fabricate direct-band-gap Ge-Sn alloys. The heavily doped n-type Ge-Sn is realized with CMOS-compatible nonequilibrium material processing. P is used to form highly doped n-type Ge-Sn layers and to modify the lattice parameter of P-doped Ge-Sn alloys. The strain engineering in heavily-P-doped Ge-Sn films is confirmed by x-ray diffraction and micro Raman spectroscopy. The change of the band gap in P-doped Ge-Sn alloy as a function of P concentration is theoretically predicted by density functional theory and experimentally verified by near-infrared spectroscopic ellipsometry. According to the shift of the absorption edge, it is shown that for an electron concentration greater than 1x10^20 cm-3 the band-gap renormalization is partially compensated by the Burstein-Moss effect. These results indicate that Ge-based materials have high potential for use in near-infrared optoelectronic devices, fully compatible with CMOS technology. △ Less

Submitted 7 January, 2019; originally announced January 2019.

Comments: 20 pages, 6 figures

Journal ref: Phys. Rev. Applied 10, 064055 (2018)

On hyperelliptic curves of genus 3

Authors: Lubjana Beshaj, Monika Polak

Abstract: We study the moduli space of genus 3 hyperelliptic curves via the weighted projective space of binary octavics. This enables us to create a database of all genus 3 hyperelliptic curves defined over $\mathbb Q$, of weighted moduli height $\mathcal h =1$. We study the moduli space of genus 3 hyperelliptic curves via the weighted projective space of binary octavics. This enables us to create a database of all genus 3 hyperelliptic curves defined over $\mathbb Q$, of weighted moduli height $\mathcal h =1$. △ Less

Submitted 7 June, 2018; originally announced June 2018.

Graph based linear error correcting codes

Authors: Monika Polak, Eustrat Zhupa

Abstract: In this article we present a construction of error correcting codes, that have representation as very sparse matrices and belong to the class of Low Density Parity Check Codes. LDPC codes are in the classical Hamming metric. They are very close to well known Shannon bound. The ability to use graphs for code construction was first discussed by Tanner in 1981 and has been used in a number of very ef… ▽ More In this article we present a construction of error correcting codes, that have representation as very sparse matrices and belong to the class of Low Density Parity Check Codes. LDPC codes are in the classical Hamming metric. They are very close to well known Shannon bound. The ability to use graphs for code construction was first discussed by Tanner in 1981 and has been used in a number of very effective implementations. We describe how to construct such codes by using special a family of graphs introduced by Ustimenko and Woldar. Graphs that we used are bipartite, bi-regular, very sparse and do not have short cycles C 4 . Due to the very low density of such graphs, the obtained codes are fast decodable. We describe how to choose parameters to obtain a desired code rate. We also show results of computer simulations of BER (bit error rate) of the obtained codes in order to compare them with other known LDPC codes. △ Less

Submitted 10 December, 2016; originally announced December 2016.

Comments: 9 pages, 5 figures, 2 tables

MSC Class: 68R10

Computationally efficient analytic representation of relativistic transition matrix elements in the Lamb shift calculations for hydrogenic atoms

Authors: J. Seke, A. V. Soldatov, M. Polak, G. Adam

Abstract: By using the plane-wave expansion for the electromagnetic-field vector potential, transition matrix elements between the relativistic bound and unbound states of hydrogenic atoms were expressed explicitly in terms of finite series made of hypergeometric functions. This representation for the above mentioned matrix elements proved very convenient for direct numerical calculation of their contributi… ▽ More By using the plane-wave expansion for the electromagnetic-field vector potential, transition matrix elements between the relativistic bound and unbound states of hydrogenic atoms were expressed explicitly in terms of finite series made of hypergeometric functions. This representation for the above mentioned matrix elements proved very convenient for direct numerical calculation of their contributions to the Lamb shift in hydrogenic atoms. △ Less

Submitted 15 December, 2014; originally announced December 2014.

Comments: 12 pages, 0 figures

Ab initio study of InxGa(1-x)N - performance of the alchemical mixing approximation

Authors: P. Scharoch, M. J. Winiarski, M. P. Polak

Abstract: The alchemical mixing approximation which is the ab initio pseudopotential specific implementation of the virtual crystal approximation (VCA), offered in the ABINIT package, has been employed to study the wurtzite (WZ) and zinc blende (ZB) InxGa(1-x)N alloy from first principles. The investigations were focused on structural properties (the equilibrium geometries), elastic properties (elastic cons… ▽ More The alchemical mixing approximation which is the ab initio pseudopotential specific implementation of the virtual crystal approximation (VCA), offered in the ABINIT package, has been employed to study the wurtzite (WZ) and zinc blende (ZB) InxGa(1-x)N alloy from first principles. The investigations were focused on structural properties (the equilibrium geometries), elastic properties (elastic constants and their pressure derivatives), and on the band-gap. Owing to the ABINIT functionality of calculating the Hellmann-Feynmann stresses, the elastic constants have been evaluated directly from the strain-stress relation. Values of all the quantities calculated for parent InN and GaN have been compared with the literature data and then evaluated as functions of composition x on a dense, 0.05 step, grid. Some results have been obtained which, to authors' knowledge, have not yet been reported in the literature, like composition dependent elastic constants in ZB structures or composition dependent pressure derivatives of elastic constants. The band-gap has been calculated within the MBJLDA approximation. Additionally, the band-gaps for pure $InN$ and GaN have been calculated with the Wien2k code, for comparison purposes. The evaluated quantities have been compared with the available literature reporting supercell-based ab initio calculations and on that basis conclusions concerning the performance of the alchemical mixing approach have been drawn. ... △ Less

Submitted 1 August, 2014; originally announced August 2014.

Comments: 35 pages, 11 figures

Journal ref: Comput. Mater. Sci. 81 (2014) 358-365

Anomalous band-gap bowing of AlN(1-x)Px alloy

Authors: M. J. Winiarski, M. Polak, P. Scharoch

Abstract: Electronic structure of zinc blende AlN(1-x)$Px alloy has been calculated from first principles. Structural optimisation has been performed within the framework of LDA and the band-gaps calculated with the modified Becke-Jonson (MBJLDA) method. Two approaches have been examined: the virtual crystal approximation (VCA) and the supercell-based calculations (SC). The composition dependence of the lat… ▽ More Electronic structure of zinc blende AlN(1-x)$Px alloy has been calculated from first principles. Structural optimisation has been performed within the framework of LDA and the band-gaps calculated with the modified Becke-Jonson (MBJLDA) method. Two approaches have been examined: the virtual crystal approximation (VCA) and the supercell-based calculations (SC). The composition dependence of the lattice parameter obtained from the SC obeys Vegard's law whereas the volume optimisation in the VCA leads to an anomalous bowing of the lattice constant. A strong correlation between the band-gaps and the structural parameter in the VCA method has been observed. On the other hand, in the SC method the supercell size and atoms arrangement (clustered vs. uniform) appear to have a great influence on the computed band-gaps. In particular, an anomalously big band-gap bowing has been found in the case of a clustered configuration with relaxed geometry. Based on the performed tests and obtained results some general features of MBJLDA are discussed and its performance for similar systems predicted. △ Less

Submitted 31 July, 2014; originally announced July 2014.

Comments: 16 pages, 6 figures

Journal ref: J. Alloys Compd. 575 (2013) 158-161

First principles prediction of structural and electronic properties of TlxIn(1-x)N alloy

Authors: M. J. Winiarski, P. Scharoch, M. P. Polak

Abstract: Structural and electronic properties of zinc blende TlxIn(1-x)N alloy have been evaluated from first principles. The band structures have been obtained within the density functional theory (DFT), the modified Becke-Johnson (MBJLDA) approach for the exchange-correlation potential, and fully relativistic pseudopotentials. The calculated band-gap dependence on Tl content in this hypothetical alloy ex… ▽ More Structural and electronic properties of zinc blende TlxIn(1-x)N alloy have been evaluated from first principles. The band structures have been obtained within the density functional theory (DFT), the modified Becke-Johnson (MBJLDA) approach for the exchange-correlation potential, and fully relativistic pseudopotentials. The calculated band-gap dependence on Tl content in this hypothetical alloy exhibits a linear behaviour up to the 25 % of thalium content where its values become close to zero. In turn, the split-off energy at the Gamma point of the Brillouin zone, related to the spin-orbit coupling, is predicted to be comparable in value with the band-gap for relatively low thalium contents of about 5 %. These findings suggest TlxIn(1-x)N alloy as a promising material for optoelectronic applications. Furthermore, the band structure of TlN reveals some specific properties exhibited by topological insulators. △ Less

Submitted 31 July, 2014; originally announced July 2014.

Comments: 11 pages, 5 figures

Journal ref: J. Alloys Compd. 613 (2014) 33-36

Coupling losses and transverse resistivity of multifilament YBCO coated superconductors

Authors: M. Polak, L. Krempasky, E. Usak, L. Jansak, E. Demencik, G. A. Levin, P. N. Barnes, D. Wehler, B. Moenter

Abstract: We studied the magnetization losses of four different types of filamentary YBCO coated conductors. A 10 mm wide YBCO coated conductor was subdivided into 20 filaments by laser cutting. The separation of coupling loss from the total is possible because the energy loss per cycle in samples with electrically insulated filaments has a very small frequency dependence. We measured the frequency depend… ▽ More We studied the magnetization losses of four different types of filamentary YBCO coated conductors. A 10 mm wide YBCO coated conductor was subdivided into 20 filaments by laser cutting. The separation of coupling loss from the total is possible because the energy loss per cycle in samples with electrically insulated filaments has a very small frequency dependence. We measured the frequency dependence of the total losses in the frequency range between 0.1 Hz and 500 Hz. The coupling loss was obtained from the total by subtracting the hysteresis loss. The latter was measured at low frequencies since only hysteresis loss is non-negligible at frequencies below 1 Hz. The transverse resistivity was determined from the coupling losses; it was assumed that the sample length is equal to half of the twist pitch. The values of transverse resistivity deduced from the loss data were compared with those obtained by the four-point measurements with current flowing perpendicular to the filaments. Preliminary results indicate that the current method of laser ablation creates electrical contacts between the superconducting filaments and the substrate. This was also confirmed by the Hall probe map** of the magnetic field in the vicinity of the tape. The measured transverse resistivity was close to the resistivity of the substrate (Hastelloy). △ Less

Submitted 17 February, 2006; originally announced February 2006.

Comments: This paper was presented at 2005 EUCAS Conference