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Scalable integration of long-lived quantum memories into a photonic circuit
Authors:
Sara L. Mouradian,
Tim Schröder,
Carl B. Poitras,
Luozhou Li,
Jordan Goldstein,
Edward H. Chen,
Jaime Cardenas,
Matthew L. Markham,
Daniel J. Twitchen,
Michal Lipson,
Dirk Englund
Abstract:
We demonstrate a photonic circuit with integrated long-lived quantum memories. Pre-selected quantum nodes - diamond micro-waveguides containing single, stable, and negatively charged nitrogen vacancy centers - are deterministically integrated into low-loss silicon nitride waveguides. Each quantum memory node efficiently couples into the single-mode waveguide (> 1 Mcps collected into the waveguide)…
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We demonstrate a photonic circuit with integrated long-lived quantum memories. Pre-selected quantum nodes - diamond micro-waveguides containing single, stable, and negatively charged nitrogen vacancy centers - are deterministically integrated into low-loss silicon nitride waveguides. Each quantum memory node efficiently couples into the single-mode waveguide (> 1 Mcps collected into the waveguide) and exhibits long spin coherence times of up to 120 μs. Our system facilitates the assembly of multiple quantum memories into a photonic integrated circuit with near unity yield, paving the way towards scalable quantum information processing.
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Submitted 24 November, 2014; v1 submitted 28 September, 2014;
originally announced September 2014.
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Silicon-Chip Mid-Infrared Frequency Comb Generation
Authors:
Austin G. Griffith,
Ryan K. W. Lau,
Jaime Cardenas,
Yoshitomo Okawachi,
Aseema Mohanty,
Romy Fain,
Yoon Ho Daniel Lee,
Mengjie Yu,
Christopher T. Phare,
Carl B. Poitras,
Alexander L. Gaeta,
Michal Lipson
Abstract:
Optical frequency combs represent a revolutionary technology for high precision spectroscopy due to their narrow linewidths and precise frequency spacing. Generation of such combs in the mid-infrared (IR) spectral region (2-20 um) is of great interest due to the presence of a large number of gas absorption lines in this wavelength regime. Recently, frequency combs have been demonstrated in the MIR…
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Optical frequency combs represent a revolutionary technology for high precision spectroscopy due to their narrow linewidths and precise frequency spacing. Generation of such combs in the mid-infrared (IR) spectral region (2-20 um) is of great interest due to the presence of a large number of gas absorption lines in this wavelength regime. Recently, frequency combs have been demonstrated in the MIR in several platforms, including fiber combs, mode-locked lasers, optical parametric oscillators, and quantum cascade lasers. However, these platforms are either relatively bulky or challenging to integrate on-chip. An alternative approach using parametric mixing in microresonators is highly promising since the platform is extremely compact and can operate with relatively low powers. However, material and dispersion engineering limitations have prevented the realization of a microresonator comb source past 2.55 um. Although silicon could in principle provide a CMOS compatible platform for on-chip comb generation deep into the mid-IR, to date, silicon's linear and nonlinear losses have prevented the realization of a microresonator-based comb source. Here we overcome these limitations and realize a broadband frequency comb spanning from 2.1 um to 3.5 um and demonstrate its viability as a spectroscopic sensing platform. Such a platform is compact and robust and offers the potential to be versatile and durable for use outside the laboratory environment for applications such as real-time monitoring of atmospheric gas conditions.
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Submitted 5 August, 2014;
originally announced August 2014.
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Overcoming Si3N4 film stress limitations for High Quality factor ring resonators
Authors:
Kevin Luke,
Avik Dutt,
Carl B. Poitras,
Michal Lipson
Abstract:
Silicon nitride (Si3N4) ring resonators are critical for a variety of photonic devices. However the intrinsically high film stress of silicon nitride has limited both the optical confinement and quality factor (Q) of ring resonators. We show that stress in Si3N4 films can be overcome by introducing mechanical trenches for isolating photonic devices from propagating cracks. We demonstrate a Si3N4 r…
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Silicon nitride (Si3N4) ring resonators are critical for a variety of photonic devices. However the intrinsically high film stress of silicon nitride has limited both the optical confinement and quality factor (Q) of ring resonators. We show that stress in Si3N4 films can be overcome by introducing mechanical trenches for isolating photonic devices from propagating cracks. We demonstrate a Si3N4 ring resonator with an intrinsic quality factor of 7 million, corresponding to a propagation loss of 4.2 dB/m. This is the highest quality factor reported to date for high confinement Si3N4 ring resonators in the 1550 nm wavelength range.
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Submitted 12 June, 2013;
originally announced June 2013.
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High Q SiC microresonators
Authors:
Jaime Cardenas,
Mian Zhang,
Christopher T. Phare,
Shreyas Y. Shah,
Carl B. Poitras,
Michal Lipson
Abstract:
We demonstrate photonic devices based on standard 3C SiC epitaxially grown on silicon. We achieve high optical confinement by taking advantage of the high stiffness of SiC and undercutting the underlying silicon substrate. We demonstrate a 20 um radius suspended microring resonator with Q of 18000 fabricated on commercially available SiC-on-silicon substrates.
We demonstrate photonic devices based on standard 3C SiC epitaxially grown on silicon. We achieve high optical confinement by taking advantage of the high stiffness of SiC and undercutting the underlying silicon substrate. We demonstrate a 20 um radius suspended microring resonator with Q of 18000 fabricated on commercially available SiC-on-silicon substrates.
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Submitted 12 June, 2013;
originally announced June 2013.
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Simultaneous Mode and Wavelength Division Multiplexing On-Chip
Authors:
Lian-Wee Luo,
Noam Ophir,
Christine Chen,
Lucas H. Gabrielli,
Carl B. Poitras,
Keren Bergman,
Michal Lipson
Abstract:
Significant effort in optical-fiber research has been put in recent years into realizing mode-division multiplexing (MDM) in conjunction with wavelength-division multiplexing (WDM) to enable further scaling of the communication bandwidth per fiber. In contrast almost all integrated photonics operate exclusively in the single-mode regime. MDM is rarely considered for integrated photonics due to the…
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Significant effort in optical-fiber research has been put in recent years into realizing mode-division multiplexing (MDM) in conjunction with wavelength-division multiplexing (WDM) to enable further scaling of the communication bandwidth per fiber. In contrast almost all integrated photonics operate exclusively in the single-mode regime. MDM is rarely considered for integrated photonics due to the difficulty in coupling selectively to high-order modes which usually results in high inter-modal crosstalk. Here we show the first demonstration of simultaneous on-chip mode and wavelength division multiplexing with low modal crosstalk and loss. Our approach can potentially increase the aggregate data rate by many times for on-chip ultra-high bandwidth communications.
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Submitted 10 June, 2013;
originally announced June 2013.
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Silicon nanostructure cloak operating at optical frequencies
Authors:
Lucas H. Gabrielli,
Jaime Cardenas,
Carl B. Poitras,
Michal Lipson
Abstract:
The ability to render objects invisible using a cloak - not detectable by an external observer - for concealing objects has been a tantalizing goal1-6. Here, we demonstrate a cloak operating in the near infrared at a wavelength of 1550 nm. The cloak conceals a deformation on a flat reflecting surface, under which an object can be hidden. The device has an area of 225 um2 and hides a region of 1.…
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The ability to render objects invisible using a cloak - not detectable by an external observer - for concealing objects has been a tantalizing goal1-6. Here, we demonstrate a cloak operating in the near infrared at a wavelength of 1550 nm. The cloak conceals a deformation on a flat reflecting surface, under which an object can be hidden. The device has an area of 225 um2 and hides a region of 1.6 um2. It is composed of nanometre size silicon structures with spatially varying densities across the cloak. The density variation is defined using transformation optics to define the effective index distribution of the cloak.
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Submitted 24 July, 2009; v1 submitted 22 April, 2009;
originally announced April 2009.
